| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 156345150 | With measuring, sensing, detection or process control means | 31 |
| 20100101725 | Apparatus for Making Epitaxial Film - An apparatus for growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications. | 04-29-2010 |
| 20100101726 | PROCESS CONTROL METHOD IN SPIN ETCHING AND SPIN ETCHING APPARATUS - The present invention provides a process control method in spin etching capable of realizing uniformity in etching amount in etching treatment for even wafers each having various conditions, and achieving uniformity of thickness values among etched wafers. In the present invention, weight of a wafer before etching is measured in units of 1/1000 g, followed by predetermined etching treatment in a spin etching section. Thereafter, weight of the wafer is again measured in units of 1/1000 g after rinsing and drying treatment of the wafer, and then an actual etching amount is calculated from a difference between weight before and after etching of the wafer, confirming an etching rate each time etching to thereby control an etching time. | 04-29-2010 |
| 20100200162 | SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING METHOD - Disclosed is a substrate processing method that dissolves and deforms a photoresist film having a first pattern formed on a substrate to reshape the resist film into a second pattern. During the reflow process, an atmosphere of a thinner vapor-containing gas is established in a processing chamber. A substrate is placed on a temperature adjusting plate. The target temperature of the temperature adjusting plate is set and controlled by a control unit, and the temperature of the temperature adjusting plate is controlled by a temperature regulator based on the target temperature set by the control unit. The control unit set and controls the target temperature so that it meets the following requirement: the atmospheric temperature≦the target temperature≦(the atmospheric temperature+2° C.). Due to the above, the reflowing of the resist can be performed stably, while achieving a satisfactory reflow rate although it is somewhat low. | 08-12-2010 |
| 20110042005 | Processing Systems and Methods for Semiconductor Devices - Systems and methods for processing semiconductor devices are disclosed. A preferred embodiment comprises a processing system that includes providing a processing system including a first container and a second container fluidly coupled to the first container, the second container being adapted to receive and retain an overflow amount of a fluid from the first container, and disposing the fluid in the first container and a portion of the second container. The method includes providing at least one semiconductor device, disposing the at least one semiconductor device in the first container, and maintaining the fluid in the second container substantially to a first level while processing the at least one semiconductor device with the fluid. | 02-24-2011 |
| 20110083807 | Apparatus for Treating Wafers Using Supercritical Fluid - Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers. | 04-14-2011 |
| 20120103520 | APPARATUS OF ETCHING GLASS SUBSTRATE - An apparatus for etching a glass substrate includes a vessel configured to contain an etchant; a first plate in the vessel and configured to receive a horizontally placed glass substrate thereon; and a circulating unit in the vessel facing the first plate and configured to create a flow of the etchant on a side of the first plate. | 05-03-2012 |
| 20120125538 | METHOD OF CREATING AN EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR (ETSOI) LAYER HAVING A UNIFORM THICKNESS - A method for creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness includes: measuring a thickness of a semiconductor-on-insulator (SOI) layer at a plurality of locations; determining a removal thickness at each of the plurality of locations; and implanting ions at the plurality of locations. The implanting is dynamically based on the removal thickness at each of the plurality of locations. The method further includes oxidizing the SOI layer to form an oxide layer, and removing the oxide layer. | 05-24-2012 |
| 20130008601 | SYSTEMS AND METHODS FOR OSCILLATING EXPOSURE OF A SEMICONDUCTOR WORKPIECE TO MULTIPLE CHEMISTRIES - Systems and methods for oscillating exposure of a semiconductor workpiece to multiple chemistries are disclosed. A method in accordance with one embodiment includes sequentially exposing a portion of a semiconductor workpiece surface to a first chemistry having a first chemical composition and a second chemistry having a second chemical composition different than the first. Prior to rinsing the portion of the workpiece surface, the portion is sequentially exposed to the first and second chemistries again. The first and second chemistries are removed from the portion, and, after sequentially exposing the portion to each of the first and second chemistries at least twice, and removing the first and second chemistries, the portion is rinsed and dried. | 01-10-2013 |
| 20130048215 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus that performs processing by immersing a substrate into a processing liquid obtained by mixing phosphoric acid with a diluent includes a concentration sensing means for sensing the concentration of the processing liquid by measuring the absorbance characteristics of the processing liquid. The concentration sensing means includes a light-transmitting section that introduces the processing liquid into the inside to let the processing liquid pass therethrough, a light-emitting section that radiates light having a predetermined wavelength to the light-transmitting section, a light-receiving section that receives the light therefrom via the light-transmitting section, a first lens that condenses the light emitted from the light-emitting section to the light-transmitting section, a second lens that condenses the light that has passed through the light-transmitting section to the light-receiving section, and a cooling mechanism that cools at least one of these. | 02-28-2013 |
| 20130240143 | SUBSTRATE PROCESSING APPARATUS - A substrate processing device, which processes by immersing the substrate in the processing liquid comprising a mixture of a chemical and a diluting liquid, is provided with: a processing tank ( | 09-19-2013 |
| 20130255882 | SUBSTRATE TREATING APPARATUS - A substrate treating apparatus includes a circulating line having a treating tank for storing a phosphoric acid aqueous solution, a circulating pump for feeding the phosphoric acid aqueous solution, a heater for circulation for heating the phosphoric acid aqueous solution, a filter for filtering the phosphoric acid aqueous solution, the circulating line causing the phosphoric acid aqueous solution discharged from the treating tank to flow in order of the circulating pump, the heater for circulation and the filter, and returning the phosphoric acid aqueous solution from the filter to the treating tank. The apparatus also includes a branch pipe branching from the circulating line between the heater for circulation and the filter for extracting the phosphoric acid aqueous solution from the circulating line, and a concentration measuring station connected to the branch pipe for measuring silicon concentration in the phosphoric acid aqueous solution by potentiometry. | 10-03-2013 |
| 20130312911 | WET-ETCHING EQUIPMENT AND ITS SUPPLYING DEVICE - A supplying device including a supplying part and an adjustment part is provided. The supplying part includes a run-through supplying path for transporting a fluid. The adjustment part includes a channel and one or more recovery paths adjacent to the channel. The supplying part is disposed in the channel to allow the fluid to flow out of the channel through the supplying part and to allow the recovery paths to suck a portion of the etching solution outputted from the channel in order to control the amount of output of the fluid. Wet-etching equipment including the supplying device is also provided. | 11-28-2013 |
| 20140053982 | METHOD AND APPARATUS FOR PROCESSING WAFER-SHAPED ARTICLES - An apparatus and method for processing wafer-shaped articles features a spin chuck that is axially displaceable between at least two exhaust levels within a surrounding collector. A gas supply system comprises ducts for supplying gas separately to a first interior region of the collector that is above the spin chuck and a second interior region that is below the spin chuck. The pressure differential within the collector above and below the spin chuck can thereby be controlled to prevent cross-contamination between collector levels. | 02-27-2014 |
| 20140174656 | Method to Improve the Operational Robustness and Safety of Combinatorial Processing Systems - Methods and apparatuses for combinatorial processing are disclosed. Apparatuses include a wet etch module (WEM) operable to combinatorially etch a substrate having at least two site-isolated regions. The WEM includes a dispense manifold operable to dispense fluids and a mixing vessel unit operable to mix fluids. The WEM further includes a reactor unit operable to receive fluids from the dispense manifold or the mixing vessel unit. The reactor unit can apply a combinatorial process on a substrate having at least two site-isolated regions within the WEM. In addition, a secondary containment unit, having a leak sensor therein, is coupled to the dispense manifold, mixing vessel unit, or reactor unit to receive fluid leaks within the system. When the leak sensor detects a fluid leak, a warning may be generated. Advantageously, the generated warning does not impede substrate processing within the WEM. | 06-26-2014 |
| 20140238606 | METHOD FOR MANUFACTURING GLASS CLICHEUSING LASER ETCHING AND APPARATUS FOR LASER IRRADIATION THEREFOR - A method for manufacturing a glass cliché using laser etching includes a dipping step for dipping a glass cliché, which will be etched, into an etching solution, a patterning step for irradiating laser to the glass cliché dipped in the etching solution to form a pattern therein, and a washing step for washing the patterned glass cliché. This method allows making a cliché with a high aspect ratio and fine line widths in comparison to a conventional cliché manufacturing method using photoresist for etching, and also ensures more efficient energy consumption and higher etching efficiency rather than an etching method using laser only. | 08-28-2014 |
| 20140262028 | Non-Contact Wet-Process Cell Confining Liquid to a Region of a Solid Surface by Differential Pressure - An open-bottomed reactor cell for wet processing of substrates can be configured to confine a process liquid to an area under the cell (processing the “internal site”), or alternatively to exclude the process liquid from most of the area under the cell (processing the “external site”) without physical contact between the cell and substrate. A slight underpressure or overpressure maintained inside the main cavity of the cell causes the liquid to form a meniscus in the narrow gap between the cell and substrate rather than flowing outside the desired process area. An area under a peripheral channel outside the main cavity of the cell is shared by both the internal site and the external side, allowing the entire substrate to be processed. | 09-18-2014 |
| 20140283992 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a first processing chamber and a second processing chamber, a first substrate holding unit that holds a substrate in the first processing chamber, a chemical solution supply unit that supplies a chemical solution containing an etching component and a thickening agent to the substrate held by the first substrate holding unit, a substrate transfer unit that transfers the substrate from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate, and a second substrate holding unit that holds a plurality of substrates on each of which the chemical solution is held in the second processing chamber. | 09-25-2014 |
| 20140290859 | WET ETCHING APPARATUS - A wet etching apparatus comprises a reservoir unit for storing aqueous solution of phosphoric acid, an additive reservoir unit for storing a silica additive; a concentration detecting unit configured to detect the silica concentration in the aqueous solution of phosphoric acid stored in the reservoir unit; a control unit configured to supply the silica additive from the additive reservoir unit to the reservoir unit if the silica concentration in the aqueous solution of phosphoric acid, detected by the concentration detecting unit, is lower than a prescribed value; and a processing unit configured to process the substrate with the aqueous solution of phosphoric acid stored in the reservoir unit. | 10-02-2014 |
| 20140374022 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate. | 12-25-2014 |
| 20150020967 | SUBSTRATE PROCESSING APPARATUS - A substrate processing method includes a water removing unit for removing water from a substrate, a silylating agent supplying unit for supplying a silylating agent to the substrate and an etching agent supplying unit for supplying an etching agent to the substrate. A control unit controls the said units to execute a water removing step, a silylating step and an etching step in that order. | 01-22-2015 |
| 20150340250 | WET ETCHING NOZZLE, SEMICONDUCTOR MANUFACTURING EQUIPMENT INCLUDING THE SAME, AND WET ETCHING METHOD USING THE SAME - A wet etching nozzle, semiconductor manufacturing equipment including the same, and a wet etching method using the same are provided. The wet etching nozzle includes a first supply pipe configured to supply a first solution, for etching a partial area of an etched layer, to a substrate including the etched layer; a first suction pipe configured to suck the first solution from the substrate; a second supply pipe configured to supply a second solution for cleaning the partial area of the etched layer; and a second suction pipe configured to suck the second solution from the substrate. | 11-26-2015 |
| 20150369709 | FILM REMOVING DEVICE - The present disclosure relates to the technical field of film thickness testing and discloses a film removing device. The film removing device includes a base, a carrying platform and a first baffle. The carrying platform is mounted on the base. A first side edge and a second side edge of the carrying platform are opposite to each other and in the direction from the first side edge towards the second side edge, the distance between the bearing surface and the base can be increased. The first baffle is mounted on the carrying platform and located on a side of the carrying platform facing away from the base. The first baffle has a sealing face, which is hermetically matched with a face of a substrate to be processed facing away from the carrying platform when the substrate to be processed is placed on the bearing surface; and a notch, inner walls of which are cooperated with the face of the substrate to be processed facing away from the carrying platform when the substrate to be processed is placed on the bearing surface so as to form a collecting slot opening to the first side edge of the bearing surface. The inner walls of the notch have a stop face facing towards the first side edge. The first baffle has a plurality of liquid guiding holes formed therein. The film removing device can create a distinct boundary after removing a portion of the film, so that the accuracy of the film thickness test can be increased. | 12-24-2015 |
| 20160020122 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus includes: a chamber that accommodates a processing target substrate therein; a gas supply unit that supplies a gas into the chamber; a gas discharge port that exhausts the chamber; an adjustment mechanism that adjusts an exhaust amount discharged from the gas discharge port; a measuring unit that measures an internal pressure of the chamber; and a controller that executes a series of substrate processings according to recipe information indicating contents of substrate processings. The controller performs a feedback control that controls an opening degree of the adjustment mechanism to maintain the internal pressure within a prescribed range based on a measurement result from the measuring unit. When a predetermined event, estimated to change the internal pressure to a level out of the prescribed range, occurs, the controller switches the feedback control to a non-feedback control that controls the opening degree based on a prescribed control value. | 01-21-2016 |
| 20160035598 | METHOD FOR CHEMICAL PLANARIZATION AND CHEMICAL PLANARIZATION APPARATUS - According to one embodiment, a method for chemical planarization includes: preparing a treatment liquid containing a hydrosilicofluoric acid aqueous solution containing silicon dioxide dissolved therein at a saturated concentration; and decreasing height of irregularity of a silicon dioxide film. In the decreasing, dissolution rate of convex portions is made larger than dissolution rate of concave portion of the irregularity while changing equilibrium state of the treatment liquid at areas being in contact with the convex portions of the irregularity, in a state in which the silicon dioxide film having the irregularity is brought into contact with the treatment liquid. | 02-04-2016 |
| 20160071747 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase. | 03-10-2016 |
| 20160093515 | SUBSTRATE PROCESSING APPARATUS - A processing liquid is supplied from a supply tank to a processing liquid nozzle of a processing unit, and the processing liquid is supplied from the processing liquid nozzle to a substrate. The processing liquid used in the processing unit is collected and selectively supplied to first and second replenishment tanks. In a period in which the used processing liquid is supplied to the first replenishment tank, the supply tank is replenished with the processing liquid in the second replenishment tank, and the processing liquid in the first replenishment tank circulates while being heated by a heater. In a period in which the used processing liquid is supplied to the second replenishment tank, the supply tank is replenished with the processing liquid in the first replenishment tank and the processing liquid in the second replenishment tank circulates while being heated by the heater. | 03-31-2016 |
| 156345160 | With endpoint detection means | 4 |
| 20080289764 | END POINT DETECTION ELECTRODE SYSTEM AND ETCH STATION - An end point detection electrode system and an etch station including the electrode system are disclosed. In one embodiment, the electrode system includes: an insulative mount; a first Mu-metal electrode coupled to the insulative mount; and a second Mu-metal electrode coupled to the insulative mount, the second electrode surrounding the first electrode. | 11-27-2008 |
| 20110139368 | APPARATUS AND SYSTEMS FOR INTEGRATED CIRCUIT DIAGNOSIS - Apparatus and systems provide a mechanism to examine physical properties and/or diagnose problems at a selected location of an integrated circuit. Such apparatus and systems can include a source of an energetic beam directed at the selected location. The apparatus and systems may be used to provide examination and/or diagnostic methods that may be used in areas smaller than one micron in diameter and that may be used to remove IC layers, either selectively or non-selectively, until a desired depth is obtained. | 06-16-2011 |
| 20110284162 | APPARATUS FOR WET PROCESSING SUBSTRATE - An exemplary apparatus for wet processing a substrate includes a conveyor configured for conveying the substrate along a conveying direction and parallel spray pipes. The spray pipes are substantially parallel with the conveyor and substantially perpendicular to the conveying direction. Each spray pipe consisting of at least one spray nozzle faces the conveyor, and the number of the at least one nozzle of each spray pipe increases along the conveying direction. | 11-24-2011 |
| 20120305186 | METAL ETCHING METHOD, METAL ETCHING CONTROL METHOD AND CONTROL DEVICE THEREOF - Disclosed is a metal etching method, a metal etching control method and a control device thereof. The metal etching control method is employed in a metal wet etching machine and comprises steps below: performing etching to a metal film and acquiring an etching end time of the metal film; multiplying the etching end time with a constant ratio to acquire the over etching time of the metal film; and performing etching to the metal film with the over etching time to complete the etching to the metal film. The present invention can precisely judge a total real etching time needed for each of a batch of metal films as performing metal etching to the metal films to reduce the issue of unstable etching qualities as the metal film thicknesses are not regular. | 12-06-2012 |
| 156345170 | Liquid etchant spray means | 1 |
| 20100170639 | APPARATUS FOR WET PROCESSING SUBSTRATE - An exemplary apparatus for wet processing a substantially rectangular substrate includes a conveyor, a supporting mechanism, an adjusting mechanism, a processing module and a dosing system. The conveyor is configured for conveying the substrate to a wet process work station. The supporting mechanism is configured for supporting the substrate away from the conveyor. The adjusting mechanism is configured for adjusting the orientation of the substrate. The processing module is configured for obtaining an area of a surface of the substrate. The dosing system communicates with the processing unit, and is configured for dispensing a corresponding amount of wet processing liquid to the substrate to wet process the substrate according to the area of the surface of the substrate from the processing module. | 07-08-2010 |
