| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 118730000 | Rotary | 55 |
| 20080210169 | System for Supporting and Rotating a Susceptor Inside a Treatment Chamber of a Wafer Treating Apparatus - The present invention relates to a system for supporting and rotating a susceptor within the treatment chamber of a wafer treatment apparatus comprising a support member ( | 09-04-2008 |
| 20080251020 | Cvd-Reactor with Slidingly Mounted Susceptor Holder - The invention relates to a device for depositing at least one layer on a substrate having one or more susceptors ( | 10-16-2008 |
| 20090056630 | WORKPIECE SUPPORT SYSTEM AND METHOD - A workpiece support system for a vacuum coating machine includes a base table having a rotating spindle rod that extends in a vertical direction away from the base table and is capable of powered rotation. A stop post is connected to the table and extends in a vertical direction at a distance from the spindle rod. A workpiece support module is connected to the spindle rod and the stop post, and includes a rotating table with peripheral openings arranged symmetrically around its periphery, a plurality of cogs positioned in the openings, a stationary table connected to the stop post and axially supporting the rotating table, and a driver finger connected to the stationary table. At least one bearing is located around the spindle rod and rotatably isolates the rotating table from the stationary table. | 03-05-2009 |
| 20090255471 | METHOD OF DEPOSITING MATERIALS ON A NON-PLANAR SURFACE - A method of depositing materials on a non-planar surface is disclosed. The method is effectuated by rotating non-planar substrates as they travel down a translational path of a processing chamber. As the non-planar substrates simultaneously rotate and translate down a processing chamber, the rotation exposes the whole or any desired portion of the surface area of the non-planar substrates to the deposition process, allowing for uniform deposition as desired. Alternatively, any predetermined pattern is able to be exposed on the surface of the non-planar substrates. Such a method effectuates manufacture of non-planar semiconductor devices, including, but not limited to, non-planar light emitting diodes, non-planar photovoltaic cells, and the like. | 10-15-2009 |
| 20090260572 | CHEMICAL VAPOR DEPOSITION APPARATUS - There is provided a chemical vapor deposition apparatus including: a chamber including a reactor where a deposition object is deposited; a first supplier including a plurality of gas pipes allowing a first gas to be jetted into the reactor in a substantially horizontal direction; a second supplier including a plurality of holes of a predetermined size having the gas pipes inserted therein, respectively; a supply flow path formed between each of the gas pipes and each of the holes, the supply flow path allowing a second gas to be supplied into the reactor in a substantially horizontal direction. | 10-22-2009 |
| 20090314212 | VACUUM VAPOR-DEPOSITION APPARATUS - A vacuum vapor-deposition apparatus is configured for coating a plurality of substrates, and includes a motor including a rotating shaft, a supporting member, a connecting ring, and a vapor source. The rotating shaft includes a first plate fixedly mounted to an end surface of the rotating shaft. The supporting member includes a second plate corresponding to the first plate and is configured for mounting the plurality of substrates thereon. The connecting ring defines a groove along an inner circumference of the connecting ring, and includes a first semi-ring and a second semi-ring fastened to the first semi-ring. The first plate and the second plate are non-rotatably received in the groove. The first plate and the second plate are disengageable from the groove if the first and second semi-rings are unfastened. The vapor source is configured for producing evaporated material to be deposited on the substrates. | 12-24-2009 |
| 20100024733 | FILM FORMATION APPARATUS AND FILM FORMATION METHOD USING THE SAME - Provided are a film formation apparatus and a film formation method which are capable of forming a pixel pattern with good dimensional accuracy and with reduced misalignment in a plane direction between a substrate and a mask when the substrate is pressed against the mask. The film formation apparatus includes an alignment mechanism for aligning a substrate and a mask with each other and a pressing mechanism for pressing the substrate against the mask with a contact member provided to one end of a pressing body, which are provided in a vacuum chamber. After alignment between the substrate and the mask by the alignment mechanism, the contact member of the pressing body is brought into contact with a surface of the substrate, which is on a side opposite to the mask, to press the substrate. | 02-04-2010 |
| 20100050942 | FILM DEPOSITION APPARATUS AND SUBSTRATE PROCESS APPARATUS - A disclosed film deposition apparatus has a separation gas supplying nozzle between reaction gas nozzles arranged away from each other in a rotation direction of a turntable on which a substrate is placed, and a ceiling member providing a lower ceiling surface on both sides of the separation gas supplying nozzle. In this film deposition apparatus, the separation gas supplying nozzle and the reaction gas nozzles are removably arranged along a circumferential direction of a chamber, and the ceiling member is removably attached on a ceiling plate of the chamber. | 03-04-2010 |
| 20100050943 | FILM DEPOSITION APPARATUS AND SUBSTRATE PROCESSING APPARATUS - A film deposition apparatus includes: a turntable; a first reaction gas supply part and a second reaction gas supply part extending from a circumferential edge toward a rotation center of the turntable; and a first separation gas supply part provided between the first and second reaction gas supply parts. A first space contains the first reaction gas supply part and has a first height. A second space contains the second reaction gas supply part and has a second height. A third space contains a first separation gas supply part and has a height lower than the first and second heights. A motor provided under the rotation center of the turntable rotates the turntable. A rotation shaft of the turntable and a drive shaft of the motor are coupled without generation of slip. | 03-04-2010 |
| 20100050944 | FILM DEPOSITION APPARATUS, SUBSTRATE PROCESS APPARATUS, AND TURNTABLE - A film deposition apparatus for depositing a film on a substrate by carrying out a cycle of alternately supplying at least two kinds of reaction gases that react with each other to the substrate to produce a layer of a reaction product in a chamber is disclosed. This film deposition apparatus includes a turntable rotatably provided in the chamber, a substrate receiving portion that is provided in the turntable and the substrate is placed in, a first reaction gas supplying portion, a second reaction gas supplying portion, a separation gas supplying portion, an upper holding member that may be pressed on an upper center portion of the turntable and is made of one of quartz and a ceramic material; and a lower holding member that may be pressed on a lower center portion of the turntable in order to rotatably hold the turntable in cooperation with the upper holding member. | 03-04-2010 |
| 20100101497 | SUBSTRATE TREATMENT APPARATUS - A substrate treatment apparatus includes a substrate holding unit, a gas ejection nozzle, and a gas supply unit. The substrate holding unit is configured to hold a substrate. The gas supply unit is configured to supply a gas to the gas ejection nozzle. The gas ejection nozzle is disposed to be positioned adjacent a center portion of the substrate held by the substrate holding unit. The gas ejection nozzle has a gas ejection port. The gas ejection nozzle is configured to eject the gas radially from the gas ejection port over the substrate held by the substrate holding unit to form a gas-flow for covering the substrate. | 04-29-2010 |
| 20100116209 | FILM DEPOSITION APPARATUS - A film deposition apparatus including a rotational member is rotated by a rotation mechanism around a vertical axis inside a chamber, a pedestal in the chamber and including substrate receiving areas formed along a circle having the vertical axis as a center, and first and second reaction gas supplying parts provided separately along a circumferential direction of the circle and supplying first and second reaction gases to the pedestal, a separating area in the rotational member and between first and second process areas to which first and second reaction gases are supplied, an evacuation port to evacuate an atmosphere inside the chamber, a separation gas supplying part in the separating area for supplying a separation gas, and an opposing surface part in the separating area on both sides of the separation gas supplying part and at a position forming a thin space between the opposing surface part and the pedestal. | 05-13-2010 |
| 20100116210 | GAS INJECTOR AND FILM DEPOSITION APPARATUS - An injector body of a gas injector has a gas inlet and a gas passage; plural gas outflow openings disposed on a wall part of the injector body along a longitudinal direction of the injector body; and a guide member that provides a slit-shaped gas discharge opening extending in the longitudinal direction of the injector body on an outer surface of the injector body, and guides gas flowing from the gas outflow openings to the gas discharge opening. | 05-13-2010 |
| 20100126419 | SUSCEPTOR FOR CVD APPARATUS AND CVD APPARATUS INCLUDING THE SAME - Provided are a susceptor and a chemical vapor deposition (CVD) apparatus including the susceptor. The susceptor has a simple structure and is configured to prevent bending of a substrate for uniformly heating the substrate and maintain wavelength uniformity of an epitaxial layer formed on the substrate. | 05-27-2010 |
| 20100229797 | FILM DEPOSITION APPARATUS - A disclosed film deposition apparatus for depositing a film on a substrate by supplying a reaction gas to an upper surface of the substrate in a vacuum chamber includes a susceptor provided in the vacuum chamber, wherein substrate receiving areas are formed along a circle whose center lies in a center portion of the susceptor; a main gas supplying portion provided opposing the susceptor in order to supply the reaction gas to the substrate receiving areas of the susceptor; a compensation gas supplying portion configured to supply the reaction gas to an upper surface of the susceptor in order to compensate for concentration of the reaction gas supplied from the main gas supplying portion along a radius direction of the susceptor; and a rotation mechanism configured to rotate the susceptor relative to the main gas supplying portion and the compensation gas supplying portion around the center portion of the susceptor. | 09-16-2010 |
| 20100236483 | CHEMICAL VAPOR DEPOSITION REACTOR HAVING MULTIPLE INLETS - A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion. | 09-23-2010 |
| 20110088623 | GAS TREATMENT SYSTEMS - An MOCVD reactor such as a rotating disc reactor ( | 04-21-2011 |
| 20110139074 | FILM DEPOSITION APPARATUS - A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space. | 06-16-2011 |
| 20110203524 | ALD FILM-FORMING APPARATUS AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE - An atomic layer deposition apparatus includes a reaction chamber, a wafer boat in the reaction chamber, a gas supply system connected to the reaction chamber, a first gas exhaust system connected to the reaction chamber, and a second gas exhaust system connected to the reaction chamber. The gas supply system supplies at least a material gas into the reaction chamber in a deposition process. The gas supply system supplies a purge gas into the reaction chamber in a purging process. The first gas exhaust system performs exhausting operation in the deposition process. The first gas exhaust system is prohibited from performing exhausting operation in the purging process. The second gas exhaust system is prohibited from performing exhausting operation in the deposition process. The second gas exhaust system performs exhausting operation in the purging process. | 08-25-2011 |
| 20120097106 | PHYSICAL VAPOR DEPOSITION DEVICE FOR COATING WORKPIECE - A physical vapor deposition device includes a deposition chamber, a workpiece carrier received in the deposition chamber, at least one cylindrical inner target, and a plurality of cylindrical outer targets. The workpiece carrier is rotatable about a rotation axis thereof. The workpiece carrier includes an inner carrier, and an outer carrier surrounding and being fixed relative to the inner carrier. The inner target is located at a central area of the inner carrier. The outer targets surround the outer carrier. | 04-26-2012 |
| 20120103265 | VAPOR PHASE GROWTH APPARATUS - Disclosed is a rotation/revolution type vapor phase growth apparatus that allows for automatic meshing between an external gear and an internal gear. In the apparatus, on tooth side surfaces of at least one kind of a plurality of external gear members provided rotatably in a circumferential direction of an outer periphery of a disk-shaped susceptor and a ring-shaped fixed internal gear member having an internal gear to mesh with the external gear members, there is provided a guide slope that abuts against a tooth side surface of the other kind of the gear member(s) to guide both kinds of the gear members into a meshed state when both kinds of the gear members move from a non-meshed state to the meshed state. | 05-03-2012 |
| 20120152171 | GAS INJECTION APPARATUS AND SUBSTRATE PROCESSING APPARATUS USING SAME - Provided are a gas injection device and substrate processing apparatus using the same. The gas injection device includes a plurality of gas injection units disposed above a substrate support part rotatably disposed within a chamber to support a plurality of substrates, the plurality of gas injection units being disposed along a circumference direction with respect to a center point of the substrate support part to inject a process gas onto the substrates. Wherein each of the plurality of gas injection units includes a top plate in which an inlet configured to introduce the process gas is provided and an injection plate disposed under the top plate to define a gas diffusion space between the injection plate and the top plate along a radius direction of the substrate support part, the injection plate having a plurality of gas injection holes under the gas diffusion space to inject the process gas introduced through the inlet and diffused in the gas diffusion space onto the substrate. In at least one gas injection unit of the plurality of gas injection units, the process gas is introduced into the gas diffusion space at a plurality of points. | 06-21-2012 |
| 20120152172 | GAS-DISCHARGING DEVICE AND SUBSTRATE-PROCESSING APPARATUS USING SAME - Provided are a gas injection device and substrate processing apparatus using the same. The gas injection device includes a plurality of gas injection units disposed above a substrate support part rotatably disposed within a chamber to support a plurality of substrates, the plurality of gas injection units being disposed along a circumference direction with respect to a center point of the substrate support part to inject a process gas onto the substrates. Each of the plurality of gas injection units includes a top plate in which an inlet configured to introduce the process gas is provided and an injection plate disposed under the top plate to define a gas diffusion space between the injection plate and the top plate along a radius direction of the substrate support part, the injection plate having a plurality of gas injection holes under the gas diffusion space to inject the process gas introduced through the inlet and diffused in the gas diffusion space onto the substrate. In at least one gas injection unit of the plurality of gas injection units, a partition wall is disposed between the top plate and the injection plate to divide the gas diffusion space into a plurality of separated spaces along the radius direction of the substrate support part, and the inlet is provided in plurality and the plurality of inlets are respectively provided in the separated spaces so that the process gases are independently introduced into the separated spaces. | 06-21-2012 |
| 20120180727 | FILM FORMING APPARATUS - Provided is a film forming apparatus for forming a film on a substrate maintained within a film forming container by supplying a raw material gas to the substrate. The film forming container includes a substrate maintaining unit, a supply mechanism configured to include a supply pipe with supply holes formed thereon to supply a raw material gas to the interior of the film forming container through the supply holes, an exhaust mechanism configured to include an exhaust pipe with exhaust holes formed thereon to exhaust gas from the interior of the film forming container through the exhaust holes, and a controller configured to control the substrate maintaining unit, the supply mechanism, and the exhaust mechanism. The supply holes and the exhaust holes are formed to face each other with the substrate maintained in the substrate maintaining unit interposed therebetween. | 07-19-2012 |
| 20120234243 | METHOD AND APPARATUS UTILIZING A SINGLE LIFT MECHANISM FOR PROCESSING AND TRANSFER OF SUBSTRATES - Embodiments of the present invention relate to apparatus and methods for loading substrates into processing chambers, processing the substrates in the processing chamber, and transferring the substrates out of the processing chamber using a single lift and rotational mechanism. One embodiment of the present invention provides a method for processing one or more substrates. The method includes transferring a substrate carrier, having one or more substrates disposed thereon, to a chamber volume, supporting the substrate carrier within the chamber volume using a set of lift pins, transferring the substrate carrier from the set of lift pins to an edge ring within the chamber volume, and contacting the edge ring with the set of lift pins to control the position of the substrate carrier within the chamber volume. | 09-20-2012 |
| 20120240859 | WAFER SUSCEPTOR AND CHEMICAL VAPOR DEPOSITION APPARATUS - A wafer susceptor and a chemical vapor deposition apparatus. In one embodiment, the chemical vapor deposition apparatus includes a chamber, a susceptor, a heater and a gas supply system. The susceptor is disposed within the chamber and is rotatable around a rotation axis, wherein an upper surface of the susceptor is suitable for carrying a plurality of wafers, and a middle region of a lower surface of the susceptor is set with a first cavity. The heater is disposed under the susceptor and is used to heat the wafers on the susceptor. The gas supply system is used to introduce a reactive gas into the chamber. | 09-27-2012 |
| 20120325151 | CHEMICAL VAPOR DEPOSITION FLOW INLET ELEMENTS AND METHODS - A flow inlet element ( | 12-27-2012 |
| 20130042813 | FILM DEPOSITION APPARATUS - A film deposition apparatus includes a turntable including plural substrate placing areas in the circumferential direction; a gas nozzle provided to extend from an inner edge to an outer edge of the substrate placing area; a gas evacuation port provided outside of an outer edge of the turntable and downstream in a rotational direction of the turntable with respect to the gas nozzle for evacuating the gas; and a regulation member including a wall portion provided between the gas nozzle and the gas evacuation port for isolating the gas nozzle and the gas evacuation port at least at a part between the inner edge to the outer edge of the substrate placing area while having a space extending from the inner edge to the outer edge of the substrate placing area when a substrate is placed on the substrate placing area. | 02-21-2013 |
| 20130125820 | CHEMICAL VAPOR DEPOSITION OR EPITAXIAL-LAYER GROWTH REACTOR AND SUPPORTER THEREOF - A chemical vapor deposition or epitaxial-layer growth reactor includes a reaction chamber. At least one substrate carrier and a supporter for supporting the substrate carrier are provided in the reaction chamber. The substrate carrier includes a first surface and a second surface. The second surface of the substrate carrier is provided with at least one recess concaved inwardly. The supporter includes: a spindle part; a supporting part connected to one end of the spindle part and extending outwardly from the periphery of the spindle part, the supporting part including a supporting surface; and a plug-in part connected to the spindle part and extending by a height towards the first surface of the substrate carrier, the plug-in part of the supporter being inserted detachably in the recess, so as to enable the substrate carrier to be placed on and supported by the supporter. | 05-23-2013 |
| 20130269615 | VERTICAL WAFER BOAT - A wafer boat for holding a plurality of semiconductor wafers in a spaced apart relationship during processing, comprising at least one support member defining a plurality of sets of at least two vertically spaced apart wafer holding provisions, each of which wafer holding provisions is configured to independently hold a wafer in a substantially horizontal orientation, and wherein said sets are arranged such that the wafer boat is configured to accommodate a plurality of juxtaposed stacks of substantially horizontally oriented, vertically spaced apart wafers. | 10-17-2013 |
| 20130291798 | THIN FILM DEPOSITION APPARATUS AND SUBSTRATE TREATMENT SYSTEM INCLUDING THE SAME - The present invention relates to a thin film deposition apparatus and a substrate treatment system including same. The thin film deposition apparatus includes a deposition chamber, a susceptor, a rotation mechanism, an elevation member, and an elevation driving unit. The deposition chamber has an inner space in which a deposition process is performed. The susceptor is disposed within the deposition chamber, and a plurality of substrates is seated on a top surface of the susceptor. The elevation member is disposed above the susceptor to support a portion of each side of the substrates seated on the susceptor. When the elevation member is operated, the substrates are separated from the susceptor or seated on the susceptor. The elevation driving unit elevates the elevation member. | 11-07-2013 |
| 20130298836 | VAPOR PHASE GROWTH APPARATUS - Provided is a vapor phase growth apparatus having a rotation/revolution mechanism by which a rolling member is prevented from riding onto an adjacent rolling member. In a vapor phase growth apparatus having a rotation/revolution structure in which a plurality of substrate retaining members | 11-14-2013 |
| 20130305992 | ROTATING AND HOLDING APPARATUS FOR SEMICONDUCTOR SUBSTRATE AND CONVEYING APPARATUS OF ROTATING AND HOLDING APPARATUS FOR SEMICONDUCTOR SUBSTRATE - A holding apparatus for a semiconductor substrate and a conveying apparatus for a semiconductor substrate. | 11-21-2013 |
| 20130319333 | Injector and Material Layer Deposition Chamber Including the Same - An injector and a material layer deposition chamber including the same. An injector includes: a plurality of independent sections; and a gas inlet and a gas outlet that are provided in each of the plurality of independent sections, wherein gas outlets provided in two adjacent sections are positioned and configured to inject gas in a limited and different direction relative to each other. | 12-05-2013 |
| 20140007815 | SUSCEPTOR AND VAPOR-PHASE GROWTH APPARATUS - The present invention provides a susceptor which is rotatably provided in a chamber and has a plurality of substrate mounting parts, and a substrate on which a thin film is deposited is rotatably mounted on the substrate mounting part, and | 01-09-2014 |
| 20140014039 | VAPOR-PHASE GROWTH APPARATUS - The present invention provides a vapor-phase growth apparatus, including: a reaction furnace in which a susceptor is removably installed, and in which vapor-phase growth is conducted; a transport robot which transports the aforementioned susceptor; a glove box which accommodates the pertinent transport robot and the aforementioned reaction furnace; an exchange table which is set up inside the pertinent glove box, and on which a susceptor is temporarily mounted during susceptor replacement; and an exchange box which is provided in a side wall of the aforementioned glove box, and in which susceptor replacement is conducted; and wherein the aforementioned exchange table comprises a positioning device which rotates upon mounting of the aforementioned susceptor, and which determines a position of the aforementioned susceptor in a rotational direction by stopping at a prescribed rotational position. | 01-16-2014 |
| 20140109833 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus is provided with a process module including a processing container, a rotary table installed within the processing container, the rotary table having a plurality of placing regions to receive substrates, and a process gas supply unit supplying a process gas to the placing regions, a load port in which a transfer container is placed, a dummy substrate receiving unit, a transfer chamber including a transfer mechanism delivering the product substrates or the dummy substrates between the transfer container or the dummy substrate receiving unit and the rotary table, a setting unit setting a placing region to which one of the product substrates is to be transferred, and a control unit outputting a control signal such that the dummy substrates are carried into the remaining placing regions. | 04-24-2014 |
| 20140209028 | FILM DEPOSITION APPARATUS - A film deposition apparatus includes a turntable; a first process gas supply portion; a gas nozzle that supplies a second process gas; a nozzle cover that is provided to cover the gas nozzle; a separation gas supply portion, wherein the nozzle cover includes an upper plate portion, and an upstream sidewall portion and a downstream sidewall portion that extend downward from upstream and downstream edge portions of the upper plate portion in a rotational direction of the turntable, respectively, wherein an inner surface of the upstream sidewall portion is formed as an inclined surface that is inclined with respect to a surface of the turntable, and wherein an angle θ | 07-31-2014 |
| 20140261187 | WAFER CARRIER HAVING PROVISIONS FOR IMPROVING HEATING UNIFORMITY IN CHEMICAL VAPOR DEPOSITION SYSTEMS - A wafer carrier and methods of making the same for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition. The wafer carrier includes wafer retention pockets recessed in its body. A thermally-insulating spacer is situated at least partially in the at least one wafer retention pocket and arranged to maintain a spacing between the peripheral wall surface and the wafer, the spacer being constructed from a material having a thermal conductivity less than a thermal conductivity of the wafer carrier such that the spacer limits heat conduction from portions of the wafer carrier body to the wafer. The wafer carrier further includes a spacer retention feature that engages with the spacer and includes a surface oriented to prevent centrifugal movement of the spacer when subjected to rotation about the central axis. | 09-18-2014 |
| 20140283750 | BATCH-TYPE VERTICAL SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE HOLDER - A batch-type vertical substrate processing apparatus includes a processing chamber into which a substrate holder configured to stack and hold a plurality of target substrates in a height direction is inserted; and a plurality of flanges formed to protrude from an inner wall of the processing chamber toward an internal space of the processing chamber along a planar direction and configured to divide the interior of the processing chamber into a plurality of processing subspaces along the height direction, wherein the flanges include insertion holes through which the substrate holder is inserted, and diameters of the insertion holes are small at an upper side of the processing chamber and become gradually larger toward a lower side of the processing chamber. | 09-25-2014 |
| 20140290581 | DEPOSITION APPARATUS - Disclosed is a deposition apparatus. The deposition apparatus comprises a susceptor into which reaction gas is introduced; a holder supporting a substrate in the susceptor; and a rotating driver for rotating the holder. | 10-02-2014 |
| 20150027376 | DEPOSITION FILM FORMING APPARATUS INCLUDING ROTATING MEMBERS - A deposition film forming apparatus including rotary members includes a plurality of substrate supports, wherein a plurality of substrates are disposed on each of the substrate supports, and each of the substrates is rotated on the substrate supports by means of a gas-foil method. | 01-29-2015 |
| 20150096496 | VAPOR PHASE FILM DEPOSITION APPARATUS - A film-deposition apparatus simultaneously realizes high partial pressure of volatile components, great flow velocity and smooth deposition rate curve at lower gas consumption. The apparatus comprises a disk-like susceptor, a face member opposing the susceptor, an injector, a material gas introduction portion, and a gas exhaust portion. A wafer holder retains a substrate, and a supporting member of the susceptor retains the wafer holder. The susceptor revolves around its central axis and the substrate rotates by itself. The opposing face member is structured so that a fan-shaped recessed portion and a fan-shaped raised portion are formed alternately in a radial manner, by which the height of the flow channel changes in a circumferential direction. The apparatus provides film deposition equivalent to that attained under optimal conditions by a conventional apparatus at a smaller flow rate of the carrier gas, and increases a partial pressure of material gases of volatile components. | 04-09-2015 |
| 20150136028 | SUBSTRATE PROCESSING APPARATUS - The present invention relates to a substrate processing apparatus: including a chamber comprising a body having an inner space and a top lid provided on an upper part of the body, the top lid having at least one gas input port; a substrate supporting unit rotatably installed inside the chamber to support a plurality of substrates; and a gas injection device comprising a central injection unit provided on an upper part of the substrate supporting unit to inject a gas into a central region of the substrate supporting unit, a source gas injection unit provided around the central injection unit to inject a source gas into the substrate supporting unit, a reaction gas injection unit provided around the central injection unit to inject a reaction gas into the substrate supporting unit and a purge gas injection unit disposed between the source gas injection unit and the reaction gas injection unit; wherein at least one of the source gas injection unit and the reaction gas injection unit comprises a main injection unit to inject a gas into the substrate supporting unit and a gas-injecting projection projecting in a intersectional direction to the main injection unit between the central injection unit and the main injection unit, the main injection unit and the projection are divided into a plurality of regions along a circumference, and the main injection unit or the projection in at least one region inject an amount of gas different than those of the other regions. The substrate processing apparatus according to the present invention can enhance uniformity and reliability of a thin film. | 05-21-2015 |
| 20150136029 | FILM DEPOSITION SYSTEM - A rotary table unit in a film deposition system according to the present invention includes a rotary table and first interchangeable units and second interchangeable units detachably attachable to the rotary table. A workpiece to be mounted on each second interchangeable unit differs in diameter from a workpiece to be mounted on each first interchangeable unit. To keep constant a distance between each of the workpieces of different sizes and a target, a distance between a position, where the workpiece mounted on each first workpiece mount plate faces an evaporation surface of the target, and a rotation center of the rotary table is set equal to a distance between a position, where the workpiece mounted on each second workpiece mount plate faces the evaporation surface of the target, and the rotation center. | 05-21-2015 |
| 20150329964 | Film Forming Apparatus - There is provided a film forming apparatus including a raw material gas nozzle provided with gas discharge holes for discharging a mixed gas of a raw material gas and a carrier gas; a flow regulating plate portion extended along the longitudinal direction of the raw material gas nozzle; a central region configured to supply a separating gas from a center side within a vacuum container toward a substrate loading surface of a rotary table; a protuberance portion protruded from the flow regulating plate portion toward the rotary table at a position shifted toward a center side of the rotary table from the gas discharge holes; and a protuberance portion configured to restrain the separating gas from flowing between the flow regulating plate portion and the rotary table; and an exhaust port configured to vacuum exhaust the interior of the vacuum container. | 11-19-2015 |
| 20150329966 | SHOWERHEAD DESIGN - Embodiments described herein relate to a showerhead having a reflector plate with a gas injection insert for radially distributing gas. In one embodiment, a showerhead assembly includes a reflector plate and a gas injection insert. The reflector plate includes at least one gas injection port. The gas injection insert is disposed in the reflector plate, and includes a plurality of apertures. The gas injection insert also includes a baffle plate disposed in the gas injection insert, wherein the baffle plate also includes a plurality of apertures. A first plenum is formed between a first portion of the baffle plate and the reflector plate, and a second plenum is formed between a second portion of the baffle plate and the reflector plate. The plurality of apertures of the gas injection insert and the plurality of apertures of the baffle plate are not axially aligned. | 11-19-2015 |
| 20150345015 | FILM DEPOSITION APPARATUS - A film deposition apparatus includes a vacuum chamber and a turntable provided in the vacuum chamber. A concave portion is formed in a surface of the turntable to accommodate a substrate therein, and a pedestal portion is provided to support a location inside a periphery of the substrate in the concave portion. At least one communication passage is formed in a wall portion of the concave portion to cause a first space around the pedestal portion in the concave portion to be in communication with a second space outside the turntable provided in an end area of the concave portion located opposite to a first center of the turntable when seen from a second center of the concave portion. An exhaust opening is provided to evacuate the vacuum chamber. | 12-03-2015 |
| 20150354057 | COATING APPARATUS FOR RESIN CONTAINER, AND RESIN CONTAINER MANUFACTURING SYSTEM - An object of the invention is to provide a coating apparatus for a resin container capable of improving mass-production efficiency of coating-treated resin containers. A plurality of container holding members, which are installed on a rotating table and can hold a resin container, are sequentially moved to a container supply position in which the resin container is supplied, a coating treatment position in which coating treatment of forming a thin film on an inner surface of the resin container is performed in a state of being combined with a chamber lid part, and a container detachment position in which the resin container to which the thin film is formed by the coating treatment can be detached according to the rotation of the rotating table, so that the treatments in the respective positions are performed in parallel. | 12-10-2015 |
| 20150376786 | Apparatus And Methods For Carousel Atomic Layer Deposition - Gas distribution assemblies and susceptor assemblies made up of a plurality of pie-shaped segments which can be individually leveled, moved or changed. Processing chambers comprising the gas distribution assemblies, the susceptor assemblies and sensors with feedback circuits to adjust the gap between the susceptor and gas distribution assembly are also described. Methods of using the gas distribution assemblies, susceptor assemblies and processing chambers are also described. | 12-31-2015 |
| 20160024655 | Atmospheric Lid With Rigid Plate For Carousel Processing Chambers - Processing chambers including lid assemblies which form a volume above an injector assembly to decrease the deflection of the injector assembly as a result of the pressure differential between the processing side of the injector assembly and the atmospheric side of the injector assembly. | 01-28-2016 |
| 20160053368 | DEPOSITION FILM FORMING APPARATUS INCLUDING ROTARY MEMBER - Disclosed is a deposition film forming apparatus including a plurality of rotary members. The deposition film forming apparatus includes a plurality of rotary members arranged on each substrate support in which the plurality of rotary members are configured to rotate a plurality of substrates, respectively. Each of the rotary members is rotated on the substrate support by a gas-foil method, and a cover is provided on a portion on the substrate support, other than portions where the plurality of rotary members are positioned. A gap is formed between the substrate supports and the cover to allow a predetermined gas used in the gas foil method to be discharged therethrough. | 02-25-2016 |
| 20160138159 | FILM FORMING APPARATUS - A film forming apparatus of forming a film by supplying a process gas onto a substrate includes a rotation table having a loading region and is configured to revolve the substrate loaded on the loading region; a process gas supply mechanism configured to supply the process gas to a gas supply region to perform film formation on the substrate repeatedly passing through the gas supply region a plurality of times by revolution of the substrate; a first gear disposed on the other surface side of the rotation table and rotated in a rotation direction of the rotation table; a second gear configured with planetary gears engaging with the first gear, disposed to be revolved together with the loading region, and configured to rotate the loading region so as to allow the substrate to be rotated. | 05-19-2016 |
| 20160153085 | SUBSTRATE PROCESSING APPARATUS | 06-02-2016 |
| 20190144996 | WAFER CARRIER AND METAL ORGANIC CHEMICAL VAPOR DEPOSITION APPARATUS | 05-16-2019 |
