| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 117201000 | With means for measuring, testing, or sensing | 13 |
| 20100242836 | SYSTEMS FOR WEIGHING A PULLED OBJECT - Pulling systems are disclosed for measuring the weight of an object coupled to a first end of a cable. The cable is routed over a pulley suspended from a load cell. The force exerted by the cable on the pulley is used to calculate the weight of the object. The second end of the cable is coupled to a drum which when rotated pulls the object by wrapping the cable around the drum. An arm is coupled to the pulley at one end and to a frame at another end. A path traveled by the cable between the pulley and the drum is substantially parallel to a longitudinal axis of the arm. Horizontal force components are transmitted by the arm to the frame and do not affect a force component measured by the load cell, thus increasing the accuracy of the calculated weight of the object. | 09-30-2010 |
| 20110120367 | SILICON SINGLE CRYSTAL PULL-UP APPARATUS - A silicon single crystal pull-up apparatus includes a pull-up furnace, a sample chamber in which a sublimable dopant is housed, a sample tube which can be raised and lowered between the interior of the sample chamber and the interior of the pull-up furnace, a raising and lowering means for raising and lowering the sample tube, a supply pipe which is installed inside the pull-up furnace and supplies the sublimable dopant to a melt, and a connection means for connecting the sample tube and the supply pipe. The connection means is constructed from a ball joint structure comprising a convex member which projects from one end of the sample tube and a concave member which is provided at one end of the supply pipe and is formed to be engageable with the convex member. The contact surfaces of the convex member and the concave member are formed to be curved surfaces. | 05-26-2011 |
| 20140338590 | HIGH TEMPERATURE FURNACE INSULATION - A high temperature furnace comprising hot zone insulation having at least one shaped thermocouple assembly port to reduce temperature measurement variability is disclosed. The shaped thermocouple assembly port has an opening in the insulation facing the hot zone that is larger than the opening on the furnace shell side of the insulation. A method for producing a crystalline ingot in a high temperature furnace utilizing insulation having a shaped thermocouple assembly port is also disclosed. | 11-20-2014 |
| 20150114283 | Cantilever Device For Extending Capacity Of A Scale Used In A Crystal Growth Apparatus - A cantilever device for extending capacity of a scale used in a crystal growth apparatus having a pulling head wherein upward movement of a support column in the pulling head decreases a weight measured by the scale. The device includes a horizontal arm having first and second brackets, wherein the first bracket is attached to the pulling head. The device also includes a plate that extends through openings in the first and second brackets, wherein the plate includes a contact end and a free end. Further, the device includes a flexible element attached between the arm and the plate to form a pivot to enable rotation of the plate. A load is positioned on the plate wherein the load causes rotation of the plate about the pivot to cause upward movement of the contact end to move the support column upward to decrease weight measured by the scale. | 04-30-2015 |
| 20160122898 | INGOT GROWING APPARATUS - An ingot growing apparatus. A main chamber includes a crucible accommodating a source material therein and a heater melting the source material by heating the crucible. A dome chamber is disposed on top of the crucible. A pull chamber is disposed on top of the dome chamber. An ingot grown in the crucible moves via a seed cable within the dome chamber and the pull chamber. A weight-measuring unit is disposed on top of the pull chamber. The weight-measuring unit includes a housing disposed on top of the pull chamber, with the interior thereof being maintained in a vacuum state, a support roller disposed within the housing to support the seed cable, and a load cell disposed outside of the housing to measure a weight of the ingot supported by the support roller. | 05-05-2016 |
| 117202000 | With responsive control means | 7 |
| 20080264332 | Method, system, and apparatus for doping and for multi-chamber high-throughput solid-phase epitaxy deposition process - The current application deals with the doping and multi-chamber method and apparatus for the growth of material, directed toward Solid Phase Epitaxy (SPE) process. We will examine different variations and features of this method and process. The advantages of this method are the high throughput and the reduced operational cost of the production for semiconductor material and devices, such as III-V material (e.g. GaAs) and solar cell devices. It can be applied to many systems and devices/material. | 10-30-2008 |
| 20100162946 | System for continuous growing of monocrystalline silicon - An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput. | 07-01-2010 |
| 20100206219 | METHOD AND APPARATUS FOR CONTROLLING DIAMETER OF A SILICON CRYSTAL INGOT IN A GROWTH PROCESS - An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target taper of a meniscus and a measured taper, and translating the taper error into a feedback adjustment to a pull-speed of the silicon ingot. The conventional control model for controlling the CZ process relies on linear control (PID) controlling a non-linear system of quadratic relationship defined in the time domain between the diameter and the pull-speed. The present invention transforms the quadratic relationship in the time domain between the diameter and the pull-speed into a simile, linear relationship in the length domain between a meniscus taper of the ingot and the pull-speed. The present invention applies a linear control (modified PID) which operates in the length domain, and controls a system that has a linear relationship between the ingot taper and the pull-speed in the length domain to control the diameter of a growing silicon ingot. | 08-19-2010 |
| 20120145071 | SYSTEM OF CONTROLLING DIAMETER OF SINGLE CRYSTAL INGOT AND SINGLE CRYSTAL INGOT GROWING APPARATUS INCLUDING THE SAME - Provides are a system of controlling a diameter of a single crystal ingot and a single crystal ingot growing apparatus including the same. The system of controlling a diameter of a single crystal ingot includes: a diameter measuring sensor measuring a diameter of a single crystal ingot; a Low-Pass Filter (LPF) removing short period noise from measured data from the diameter measuring sensor; and an Automatic Diameter Control (ADC) sensor controlling the diameter of the single crystal ingot through controlling of a pull speed by using data having the noise removed as current data. | 06-14-2012 |
| 20120186512 | PROCEDURE FOR IN-SITU DETERMINATION OF THERMAL GRADIENTS AT THE CRYSTAL GROWTH FRONT - A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth. | 07-26-2012 |
| 20160115619 | ZONE MELTING FURNACE THERMAL FIELD WITH DUAL POWER HEATING FUNCTION AND HEAT PRESERVATION METHOD - The present invention aims at providing a zone melting furnace thermal field with a dual power heating function and a heat preservation method. The zone melting furnace thermal field comprises a primary heating coil and an auxiliary heater, wherein the auxiliary heater has a wavy appearance bent repeatedly up and down and forms a circular loop by surrounding in the horizontal direction, wherein both end parts of the auxiliary heater are provided with ports and are connected with an auxiliary heating power supply through cables; and the auxiliary heating power supply is also sequentially connected with a data analysis module and an infrared temperature measuring instrument through single lines. The present invention can solve the problem of single crystal rod cracking caused by unreasonable distribution of the thermal field and overlarge thermal stress in the growth process of zone-melted silicon single crystals over 6.5 inches, and simultaneously can improve the thermal field distribution in the growth process of 3-6 inch zone-melted silicon single crystals. | 04-28-2016 |
| 20160138184 | MELT SURFACE FLOW FIELD MEASUREMENT METHOD FOR ARTIFICIAL CRYSTAL GROWTH SYSTEMS AND CRYSTAL GROWTH APPARATUS UTILIZING THE METHOD - A melt surface flow field measurement method that captures flow rates at multiple tracking points and their mapping on melt surface for artificial crystal growth systems includes the following steps: (A) capture two consecutive images of the melt surface at a time interval of Δt; (B) define the significant regions in the first image as a plurality of first grid regions, then calculate centroid coordinates of the first grid regions; (C) define the regions in the second image corresponding to the significant regions in the first image as a plurality of second grid regions, then calculate centroid coordinates of the second grid regions; (D) lay the second set of centroid coordinates over the first grid regions, and calculate the distances between corresponding centroid coordinates to determine the displacement of the identified significant regions; and (E) divide the displacements by the time interval Δt to determine the flow rate and direction of each identified significant region on melt surface at their centroids—the tracking points. | 05-19-2016 |
| 117203000 | With a window or port for visual observation or examination | 1 |
| 20090120354 | CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, GROUP-III NITRIDE CRYSTAL AND GROUP-III NITRIDE SEMICONDUCTOR DEVICE - A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a). | 05-14-2009 |
