| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 117108000 | Using an energy beam or field, a particle beam or field, or a plasma (e.g., MBE) | 12 |
| 20090084310 | Method for manufacturing single crystal nano-structures capable of controlling morphology and device for manufacturing nano-structures - The present invention discloses a method for manufacturing single crystal nano-structures capable of controlling morphology so as to allow materials with various morphologies to form nano-structures in desired morphologies and a device for manufacturing the nano-structures, according to variables such as a temperature of a target member in a vacuum system, an applied voltage applied to the target member, a pulse width, a kind of precursors after vaporization of the target member, etc. Each of the nano-structures of the present invention can be used as a unit of a storage medium so that a high density storage medium can be manufactured and various devices can be miniaturized by using particular electrical and physical characteristics that are exhibited in a nano-size semiconductor or metal. | 04-02-2009 |
| 20090283029 | ABATEMENT OF REACTION GASES FROM GALLIUM NITRIDE DEPOSITION - Methods for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, or for wafers. The equipment and methods are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. The method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber to form the semiconductor material; removing exhaust gases including unreacted Group III precursor, unreacted Group V component and reaction byproducts; and heating the exhaust gases to a temperature sufficient to reduce condensation thereof and enhance manufacture of the semiconductor material. Advantageously, the exhaust gases are heated to sufficiently avoid condensation to facilitate sustained high volume manufacture of the semiconductor material. | 11-19-2009 |
| 20090301390 | APPARATUS FOR EVAPORATION, A CRUCIBLE FOR EVAPORATION AND A METHOD OF GROWING A FILM ON A SUBSTRATE - The present invention relates to an apparatus for evaporation comprising a vacuum chamber, a substrate stage defining a substrate plane and at least one effusion cell, the effusion cell comprising a crucible having a volume, wherein said effusion cell, crucible and substrate stage are arranged inside the vacuum chamber. The crucible comprises a first end, a second end, at least one side wall and an aperture. In a typical apparatus according to the invention the aperture is situated in the first wall or in a side wall closer to the first end than the second end, the second end arranged closer to the substrate plane than the first end. The invention also relates to a crucible for evaporation, having a volume, comprising a first end, a second end, at least one side wall and an aperture. The invention further relates to a method of growing a film on a substrate. | 12-10-2009 |
| 20090308305 | PROCESS FOR PRODUCING SINGLE-CRYSTAL SUBSTRATE WITH OFF ANGLE - The invention provides a process for producing a single-crystal substrate with an off-angle, which comprises using, as a substrate, a material capable of epitaxial growth by a vapor-phase synthesis method, whose surface has an off-angle with respect to a crystal plane capable of epitaxial growth; implanting ions into the substrate having a surface with an off-angle to form a layer with a deteriorated crystal structure near the surface of the substrate; growing a crystal on the surface with an off-angle of the substrate by a vapor-phase synthesis method; and separating a grown crystal layer from the substrate. In accordance with the process of the invention, when producing off-substrates usable in vapor-phase synthesis of single crystals, the manufacturing costs can be reduced, and substrates with an identical off-angle can be produced easily and in large quantities. | 12-17-2009 |
| 20110005455 | Method for Manufacturing a Mono-Crystalline Layer on a Substrate - The present invention is related to a method for growing a layer of a mono-crystalline material on a substrate comprising
| 01-13-2011 |
| 20110030611 | METHOD FOR PREPARING POLYCRYSTALS AND SINGLE CRYSTALS OF ZINC OXIDE (ZnO) ON A SEED BY CHEMICALLY ACTIVATED SUBLIMATION AT HIGH TEMPERATURE AND DEVICE FOR CARRYING OUT SAID METHOD - A method for preparing polycrystalline or single-crystal zinc oxide ZnO on a seed placed in an enclosure under a controlled atmosphere, by sublimation of a zinc oxide source placed in a crucible inside the enclosure and distant from the seed, by formation of gas species, transport of gas species, condensation of gas species on the seed, recombination of the ZnO at the surface of the seed, growth of polycrystalline or single-crystal ZnO on the seed, and cooling of the polycrystalline or single-crystal ZnO, wherein:
| 02-10-2011 |
| 20110114017 | EPITAXIAL GROWTH APPARATUS AND EPITAXIAL GROWTH METHOD - An object of the present invention is to provide an epitaxial growth apparatus and an epitaxial growth method that can suppress variation in in-face temperature of a semiconductor wafer caused by deflection of a susceptor and manufacture an epitaxial wafers of high quality. Specifically, the present invention provides an epitaxial growth apparatus for forming an epitaxial film on a semiconductor wafer placed in a chamber having a supply port and an exhaust port for a treatment gas, the apparatus comprising: a susceptor for placing the semiconductor wafer thereon within the chamber; and a susceptor support shaft for supporting the susceptor at an underneath portion of the susceptor, wherein the susceptor support shaft has a support column located substantially coaxial with the center of the susceptor, and at least four support arms extending radially from the top end of the support column with equal intervals therebetween. | 05-19-2011 |
| 20110239932 | Method for reducing defects in epitaxially grown on the group III-nitride materials - The present invention discloses a method to grow group III-nitride materials on a non-native substrate with much reduced threading dislocation (TD) density and smooth surface by using MBE. The first layer is to suppress the formation of screw TD while the second layer is to bend the propagation of edge TD. After that, the migration enhanced epitaxy (MEE) approach is used to smoothen the second layer surface before a main layer of group III-nitride is growth to the thickness required for different applications. All of these steps are performed in the MBE reactor by carefully control over the arrival rate and sequence of group III atoms and nitrogen radicals onto the sample substrate. By using reflective high energy electron diffraction (RHEED), the change of each layer's surface morphology can be monitored during the growth to achieve the high quality group III-nitride materials. | 10-06-2011 |
| 20120260851 | METHOD OF MANUFACTURING TRANSPARENT OXIDE THIN FILM - A method of manufacturing a zinc oxide-based thin film for a transparent electrode and a zinc oxide-based thin film manufactured using the method, in which both conductivity and transmittance can be improved. The method includes the step of forming a transparent oxide thin film doped with a dopant on a transparent substrate, and the step of rapidly heat-treating the transparent oxide thin film. | 10-18-2012 |
| 20140230724 | METHOD FOR FORMING MAGNESIUM OXIDE THIN FILM AND PROCESSED PLATE - A method for depositing a magnesium oxide thin film on a substrate by a laser abrasion method using a sintered body or single crystal of magnesium oxide as a target. In this method, a flat processed film made of magnesium oxide having a (111) plane as its front surface is prepared, using a substrate made of strontium titanate having a (111) plane as its principal surface or yttria-stabilized zirconia having a (111) plane as its principal surface, by directly depositing a film on the principal surface of the substrate and epitaxially growing the film. | 08-21-2014 |
| 20140245947 | METHODS OF PRODUCING LARGE GRAIN OR SINGLE CRYSTAL FILMS - Highly textured [111] oriented films such as MgO crystalline films are deposited by e-beam evaporation on ordinary soda-lime glass. Semiconductor films such as silicon can be deposited on these MgO films using eutectics at temperatures below the softening point of ordinary glass and having extremely high textured and strong [111] orientation. The invention may be used for efficient and cost effective solar cells, displays, etc. | 09-04-2014 |
| 20140331919 | METHOD FOR PRODUCING GA2O3 CRYSTAL FILM | 11-13-2014 |
