| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 117105000 | Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) | 6 |
| 20090000541 | Atomic layer epitaxy processed insulation - In one embodiment the present invention proved for a method for depositing a thin film layer onto a composite tape | 01-01-2009 |
| 20100031877 | SIC SINGLE CRYSTALS WITH REDUCED DISLOCATION DENSITY GROWN BY STEP-WISE PERIODIC PERTURBATION TECHNIQUE - In a crystal growth method, a seed crystal | 02-11-2010 |
| 20120227663 | OXIDE METAL SEMICONDUCTOR SUPERLATTICES FOR THERMOELECTRICS - Lanthanum strontium manganate (La | 09-13-2012 |
| 20130061801 | METHOD FOR MANUFACTURING SILICON CARBIDE CRYSTAL - Provided is a method for manufacturing a silicon carbide crystal, including the steps of: placing a seed substrate and a source material for the silicon carbide crystal within a growth container; and growing the silicon carbide crystal with a diameter of more than 4 inches on a surface of the seed substrate by a sublimation method, in the step of growing, a pressure within the growth container being changed from a predetermined pressure, at a predetermined change rate. | 03-14-2013 |
| 20140190401 | METHOD, SYSTEM, AND APPARATUS FOR DOPING AND FOR MULTI-CHAMBER HIGH-THROUGHPUT SOLID-PHASE EPITAXY DEPOSITION PROCESS - A doping and multi-chamber method and apparatus for the growth of material, directed toward Solid Phase Epitaxy (SPE) process, is disclosed. Different variations and features of this method and process are examined. The advantages of this method are the high throughput and the reduced operational cost of the production for semiconductor material and devices, such as III-V material (e.g. GaAs) and solar cell devices. It can be applied to many systems and devices/materials. | 07-10-2014 |
| 20150083037 | Isoelectronic Surfactant Induced Sublattice Disordering In Optoelectronic Devices - A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to desorb; and growing subsequent layers all performed at a low pressure of 25 torr. | 03-26-2015 |
