Class / Patent application number | Description | Number of patent applications / Date published |
117078000 | Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, solvent, flux) | 26 |
20100326350 | Magnetic garnet single crystal and optical element using same as well as method of producing single crystal - The present invention relates to a magnetic garnet single crystal prepared by the liquid phase epitaxial (LPE) process and an optical element using the same as well as a method of producing the single crystal, for the purpose of providing a magnetic garnet single crystal at a reduced Pb content and an optical element using the same, as well as a method of producing the single crystal. The magnetic garnet single crystal is grown by the liquid phase epitaxial process and is represented by the chemical formula Bi | 12-30-2010 |
20110203516 | METHOD FOR PRODUCING A CRYSTALLIZED SEMICONDUCTOR MATERIAL - A method for producing a crystallized compound semiconductor material comprises synthesizing said material by fusion and inter-reaction of its constituents placed in elementary form constituting a charge into a sealed ampoule, and then crystallizing the resulting material in liquid form by cooling. Also including: increasing, within the charge, proportion of one constituent beyond the stoichiometric proportions of the material, thereby defining an excess of the one constituent; subjecting the entire sealed ampoule to a temperature higher than or equal to fusion temperature of the material; subjecting the ampoule to a low temperature gradient and to a gradual drop in temperature, to induce crystallization of the resulting material in liquid form, in stoichiometric proportion; subjecting part of the ampoule where the crystallized material is not present, to a significant drop in temperature modifying vapor pressure state of the excess to a saturated vapor state; and cooling the whole assembly down to ambient temperature. | 08-25-2011 |
20120111264 | METHOD FOR PRODUCING GROUP III METAL NITRIDE SINGLE CRYSTAL - A plurality of seed crystal films of a single crystal of a nitride of a metal belonging to group III are formed on a substrate, while a non-growth surface not covered with the seed crystal films is formed on the substrate. A single crystal of a nitride of a metal belonging to group III is grown on the seed crystal film. A plurality of the seed crystal films are separated by the non-growth surface and arranged in at least two directions X and Y. The maximum inscribed circle diameter “A” of the seed crystal film is 50 μm or more and 6 mm or less, a circumscribed circle diameter “B” of the seed crystal film is 50 μm or more and 10 mm or less, and the maximum inscribed circle diameter “C” of the non-growth surface | 05-10-2012 |
20120125254 | Method for Reducing the Range in Resistivities of Semiconductor Crystalline Sheets Grown in a Multi-Lane Furnace - A method for reducing the range in resistivities of semiconductor crystalline sheets produced in a multi-lane growth furnace. A furnace for growing crystalline sheets is provided that includes a crucible with a material introduction region and a crystal growth region including a plurality of crystal sheet growth lanes. The crucible is configured to produce a generally one directional flow of material from the material introduction region toward the crystal sheet growth lane farthest from the material introduction region. Silicon doped with both a p-type dopant and an n-type dopant in greater than trace amounts is introduced into the material introduction region. The doped silicon forms a molten substance in the crucible called a melt. Crystalline sheets are formed from the melt at each growth lane in the crystal growth region. Co-doping the silicon feedstock can reduce the variation in resistivities among the crystalline sheets formed in each lane. | 05-24-2012 |
20120125255 | METHOD AND APPARATUS FOR PRODUCING CRYSTAL OF METAL NITRIDE OF GROUP 13 OF THE PERIODIC TABLE - A method for producing a crystal of a metal nitride of Group 13 of the periodic table, the method comprises: | 05-24-2012 |
20120255484 | SYSTEM AND METHODS FOR GROWING HIGH-RESISTANCE SINGLE CRYSTALS - A method for growing high-resistivity single crystals includes placing a raw material in a vacuum-sealable ampoule, heating the raw material in the vacuum-sealable ampoule to vaporize the moisture in the raw material, exhausting the vaporized moisture from the vacuum-sealable ampoule, vacuum-sealing the vacuum-sealable ampoule, heating the raw material in the vacuum-sealable ampoule to vaporize the oxide compounds in the raw material, cooling a bulb in a cap on the vacuum-sealable ampoule to produce condensed oxide compounds on an inner surface of the bulb, removing the bulb and the condensed oxide compounds from the vacuum-sealable ampoule, wherein the raw material in the vacuum-sealable ampoule comprises carbon as an impurity, and placing the vacuum-sealable ampoule comprising the raw material in a crystal growth apparatus to grow a high-resistivity crystal from the raw material. | 10-11-2012 |
20140000509 | SEMICONDUCTOR CRYSTAL REMOVAL APPARATUS AND PRODUCTION METHOD FOR SEMICONDUCTOR CRYSTAL | 01-02-2014 |
20140014028 | Method for Producing Gallium Nitride Layer and Seed Crystal Substrate Used in Same - A gallium nitride layer is produced using a seed crystal substrate by flux method. The seed crystal substrate | 01-16-2014 |
20140026809 | Process for Producing Group 13 Metal Nitride, and Seed Crystal Substrate for Use in Same - A seed crystal substrate | 01-30-2014 |
20160122900 | APPARATUS FOR PRODUCING SiC SINGLE CRYSTALS AND METHOD OF PRODUCING SiC SINGLE CRYSTALS USING SAID PRODUCTION APPARATUS - An apparatus for producing SiC single crystals where the quality of the SiC single crystals is improved, and a production method using such an apparatus are provided. The apparatus for producing SiC single crystals according to an embodiment of the present invention is employed to produce an SiC single crystal by the solution growth method. The production apparatus includes a crucible and a support shaft. The crucible accommodates an Si—C solution. The support shaft supports the crucible. The support shaft includes a heat removing portion for removing heat from a bottom portion of the crucible. The heat removing portion includes one of (a) a contact portion having a thermal conductivity not less than that of the bottom portion and contacting at least a portion of the bottom portion and (b) a space adjacent to at least a portion of the contact portion or the bottom portion. | 05-05-2016 |
20170233887 | Methods of Producing a Semiconductor with Decreased Oxygen Contamination and Impurities | 08-17-2017 |
117079000 | Unusable portion contains a metal atom (e.g., diamond or CBN growth in metal solvent) | 14 |
20090038539 | PROCESS FOR PRODUCING SINGLE CRYSTAL - A raw material mixture containing an easily oxidizable material is weighed. The raw material mixture is melted and then solidified within a reaction vessel | 02-12-2009 |
20090205561 | METHOD FOR PRODUCING SILICON CARBIDE (SiC) CRYSTAL AND SILICON CARBIDE (SiC) CRYSTAL OBTAINED BY THE SAME - A production method is provided that enables to produce a large-sized bulk silicon carbide (SiC) crystal of high quality at low cost. A large-sized bulk silicon carbide (SiC) crystal of high quality can be obtained at a lower temperature by reacting silicon (Si) and carbon (C) produced from a lithium carbide such as dilithium acetylide (Li | 08-20-2009 |
20090255457 | SYSTEM AND METHOD FOR EPITAXIAL DEPOSITION OF A CRYSTAL USING A LIQUID-SOLVENT FLUIDIZED-BED MECHANISM - A system and method for growing diamond crystals from diamond crystal seeds by epitaxial deposition at low temperatures and atmospheric and comparatively low pressures. A solvent is circulated (by thermal convection and/or pumping), wherein carbon is added in a hot leg, transfers to a cold leg having, in some embodiments, a range of progressively lowered temperatures and concentrations of carbon via the circulating solvent, and deposits layer-by-layer on diamond seeds located at the progressively lower temperatures since as diamond deposits the carbon concentration lowers and the temperature is lowered to keep the solvent supersaturated. The solvent includes metal(s) or compound(s) that have low melting temperatures and transfer carbon at comparatively low temperatures. A controller receives parameter signals from a variety of sensors located in the system, processes these signals, and optimizes diamond deposition by outputting the necessary control signals to a plurality of control devices (e.g., valves, heaters, coolers, pumps). | 10-15-2009 |
20090293805 | Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal - It is provided a melt composition for growing a gallium nitride single crystal by flux method. The melt composition contains gallium, sodium and barium, and a content of barium is 0.05 to 0.3 mol % with respect to 100 mol % of sodium. | 12-03-2009 |
20100288189 | Floating Semiconductor Foils - One embodiment of the present invention is a method for producing a silicon (Si) and/or germanium (Ge) foil, the method including: dissolving a Si and/or Ge source material in a molten metallic bath at an elevated temperature T | 11-18-2010 |
20110185964 | METHOD AND SYSTEM FOR DIAMOND DEPOSITION USING A LIQUID-SOLVENT CARBON-TRANFSER MECHANISM - A system and method for growing diamond crystals from diamond crystal seeds by epitaxial deposition at low temperatures and atmospheric and comparatively low pressures. A solvent is circulated (by thermal convection and/or pumping), wherein carbon is added in a hot leg, transfers to a cold leg having, in some embodiments, a range of progressively lowered temperatures and concentrations of carbon via the circulating solvent, and deposits layer-by-layer on diamond seeds located at the progressively lower temperatures since as diamond deposits the carbon concentration lowers and the temperature is lowered to keep the solvent supersaturated. The solvent includes metal(s) or compound(s) that have low melting temperatures and transfer carbon at comparatively low temperatures. A controller receives parameter signals from a variety of sensors located in the system, processes these signals, and optimizes diamond deposition by outputting the necessary control signals to a plurality of control devices (e.g., valves, heaters, coolers, pumps). | 08-04-2011 |
20110271900 | HIGH PRESSURE HIGH TEMPERATURE (HPHT) METHOD FOR THE PRODUCTION OF SINGLE CRYSTAL DIAMONDS - A high pressure high temperature (HPHT) method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least (1) and a growth surface substantially parallel to a {110} crystallographic plane is utilised is described. The growth is effected at a temperature in the range from 1280° C. to 1390° C. | 11-10-2011 |
20110277680 | ARTIFICIAL CORUNDUM CRYSTAL - An artificial corundum crystal which can be put into practical use at low costs, and a process for producing the same. The artificial corundum crystal has at least one crystal face selected from {113}, {012}, {014}, {113}, {110}, {101}, {116}, {211}, {122}, {214}, {100}, {125}, {223}, {131}, and {312} faces. The process for producing the artificial corundum crystal is by a flux evaporation method of heating a sample containing a raw material and a flux to precipitate a crystal and grow the crystal by use of flux evaporation as a driving force. | 11-17-2011 |
20120291695 | METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE SINGLE CRYSTALS - A method for producing hexagonal boron nitride single crystals including mixing boron nitride crystals with a solvent thereby obtaining a mixture, heating and melting the mixture under high-temperature and high-pressure thereby obtaining a melted mixture, and rectystallizing the melted mixture thereby producing hexagonal boron nitride single crystals, wherein the solvent is boronitride of alkali earth metal, or boronitride of alkali metal and the boronitride of alkali earth metal. | 11-22-2012 |
20130160700 | STEP HEATING PROCESS FOR GROWING HIGH QUALITY DIAMOND - Disclosed is a method of growing a diamond, including the steps of providing a diamond seed in a reaction chamber; providing a protective layer above the diamond seed; providing a catalyst above the protective layer; providing a carbon source above the catalyst; applying pressure to the reaction chamber; heating the catalyst to a first temperature; holding the first temperature for a first duration; heating the catalyst to a second temperature; and holding the second temperature for a second duration. | 06-27-2013 |
20150020730 | SEED CRYSTAL HOLDER, CRYSTAL GROWING DEVICE, AND CRYSTAL GROWING METHOD - A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view. | 01-22-2015 |
20150027363 | PROCESS FOR MANUFACTURING SYNTHETIC SINGLE CRYSTAL DIAMOND MATERIAL - A method for manufacturing a plurality of synthetic single crystal diamonds, the method comprising: forming a plurality of seed pads, each seed pad comprising a plurality of single crystal diamond seeds anchored to, or embedded in, an inert holder; loading a carbon source, a metal catalyst, and the plurality of seed pads into a capsule; loading the capsule into a high pressure high temperature (HPHT) press; and subjecting the capsule to a HPHT growth cycle to grow single crystal diamond material on the plurality of single crystal diamond seeds, the HPHT growth cycle comprising: initiating HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds by increasing pressure and temperature; maintaining HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds via a pressure driven growth process by controlling and maintaining pressure and temperature; and terminating HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds by reducing pressure and temperature, wherein the plurality of single crystal diamond seeds remain anchored to, or embedded in, the inert holders during the HPHT growth cycle. | 01-29-2015 |
20150144055 | PROCESS FOR THE PRODUCTION OF CRYSTALLINE TITANIUM POWDER - The invention provides a process for the production of crystalline titanium powder containing single crystals or agglomerates of single crystals having an average crystal size (by volume) greater than 1 μm, said process including reacting a titanium chloride species, preferably titanium dichloride, and reducing metal in a continuous back-mix reactor to produce a free flowing suspension of titanium powder in molten chloride salt wherein: i. both the titanium chloride species and the reducing metal are dissolved in a molten chloride salt and fed to the reactor containing a chloride salt of the reducing metal; ii. the average feed ratio of the titanium chloride species and reducing metal to the continuous back-mix reactor is within 1%, preferably within 0.1%, of the stoichiometric ratio required to fully reduce the titanium chloride salt to titanium metal; iii. the concentration of titanium powder in the fluid suspension of titanium powder in molten salt in the continuous back-mix reactor is between 2 and 23 mass %; and iv. The reducing metal is lithium, sodium, magnesium, or calcium. | 05-28-2015 |
20160177468 | METHOD AND APPARATUS FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL | 06-23-2016 |
117080000 | Unusable portion contains an oxygen atom (e.g., oxide flux) | 1 |
20120111265 | METHOD AND STRUCTURE FOR NONLINEAR OPTICS - A nonlinear optical crystal having a chemical formula of Y | 05-10-2012 |