Class / Patent application number | Description | Number of patent applications / Date published |
117074000 | Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) | 7 |
20090101062 | Method for Producing Silicon Carbide Single Crystal - A method for producing a silicon carbide single crystal, which comprises bringing a silicon carbide single crystal substrate into contact with a melt prepared by melting a raw material containing Si and C, and growing a silicon carbide single crystal on the substrate, the method including performing a cycle comprising the following steps (a) and (b):
| 04-23-2009 |
20100012020 | METHOD FOR MANUFACTURING NITRIDE SINGLE CRYSTAL - A nitride single crystal is produced on a seed crystal substrate | 01-21-2010 |
20100037816 | CRYSTAL GROWING SYSTEM HAVING MULTIPLE CRUCIBLES AND USING A TEMPERATURE GRADIENT METHOD - A multiple crucible crystal growing system using a temperature gradient method is disclosed. The system comprises a crystal furnace, a plurality of crucibles, and an elevating device, wherein the furnace includes a furnace body, a heater, and a hearth, wherein the furnace body from outer to inner includes an outer shell, a fiber insulation layer, an insulation brick layer, and a refractory layer. The height of the refractory layer is ⅔-⅚ of the height of the hearth, and the heater is located at ¼-½ of the height of the hearth. The hearth is in rectangular shape and able to hold multiple crucibles to grow crystals simultaneously. The present invention ensures doping concentration and uniformity. Therefore, it can be widely applied in the area of crystal growth. | 02-18-2010 |
20100116196 | Systems, Methods and Substrates of Monocrystalline Germanium Crystal Growth - Systems, methods, and substrates directed to growth of monocrystalline germanium (Ge) crystals are disclosed. In one exemplary implementation, there is provided a method for growing a monocrystalline germanium (Ge) crystal. Moreover, the method may include loading first raw Ge material into a crucible, loading second raw Ge material into a container for supplementing the Ge melt material, sealing the crucible and the container in an ampoule, placing the ampoule with the crucible into a crystal growth furnace, as well as melting the first and second raw Ge material and controlling the crystallizing temperature gradient of the melt to reproducibly provide monocrystalline germanium ingots with improved/desired characteristics. | 05-13-2010 |
20110000424 | METHOD FOR THE CRYSTALLOGENESIS OF A MATERIAL ELECTRICALLY CONDUCTING IN THE MOLTEN STATE - The disclosure relates to a method for the crystallogenesis of a material that is electrically conducting at the molten state, by drawing from a molten mass of the material in a crucible, that comprises: progressively subjecting the molten material to a decreasing temperature so that a liquid-solid interface is formed; controlling the flatness of the liquid-solid interface of the material; subjecting the molten material, before and during solidification, to an electromagnetic kneading; the method including that the electromagnetic kneading is obtained by applying an alternating magnetic field. The disclosure also relates to a device for implementing the method. | 01-06-2011 |
20110120365 | PROCESS FOR REMOVAL OF CONTAMINANTS FROM A MELT OF NON-FERROUS METALS AND APPARATUS FOR GROWING HIGH PURITY SILICON CRYSTALS - A process for removal of contaminants from a melt of non-ferrous metals comprising the following steps: providing an apparatus ( | 05-26-2011 |
20150040821 | METHOD FOR PURIFICATION OF SILICON - The present invention relates to the purification of silicon. The present invention provides a method for purification of silicon. The method includes recrystallizing starting material-silicon from a molten solvent comprising aluminum to provide final recrystallized-silicon crystals. The method also includes washing the final recrystallized-silicon crystals with an aqueous acid solution to provide a final acid-washed-silicon. The method also includes directionally solidifying the final acid-washed-silicon to provide final directionally solidified-silicon crystals. | 02-12-2015 |