Class / Patent application number | Description | Number of patent applications / Date published |
117068000 | Having growth from a solution comprising a solvent which is liquid at or below 20 degrees Celsius (e.g., aqueous solution) | 58 |
20090095212 | Method for manufacturing single crystal of nitride - A seed crystal | 04-16-2009 |
20090126622 | Device and method for counter-diffusion crystal growth - The invention relates to a device which enables crystallisation (e.g. of biological macromolecules) by means of counter-diffusion. The inventive device consists of a one-dimensional space, for example a capillary tube, comprising three differently-shaped parts. The invention also relates to a block which comprises several of the aforementioned devices and which can be used to perform crystallisation experiments simultaneously under different conditions. The invention further related to a method of growing crystals by means of counter-diffusion in one-dimensional devices either under terrestrial gravity conditions or under reduced gravity conditions, preferably with the use of the block comprising several of said devices in the latter case. | 05-21-2009 |
20090173274 | PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED THEREON - A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge. | 07-09-2009 |
20100031872 | APPARATUS AND METHOD FOR SEED CRYSTAL UTILIZATION IN LARGE-SCALE MANUFACTURING OF GALLIUM NITRIDE - An apparatus and associated method for large-scale manufacturing of gallium nitride. The apparatus comprises a large diameter autoclave or internally-heated high pressure vessel, a seed rack, and a raw material basket. Methods include effective means for utilization of seed crystals. The apparatus and methods are scalable up to very large volumes and are cost effective. | 02-11-2010 |
20100031873 | BASKET PROCESS AND APPARATUS FOR CRYSTALLINE GALLIUM-CONTAINING NITRIDE - An apparatus and associated method for large-scale manufacturing of gallium nitride is provided. The apparatus comprises a large diameter autoclave and a raw material basket. Methods include metered addition of dopants in the raw material and control of the atmosphere during crystal growth. The apparatus and methods are scalable up to very large volumes and are cost effective. | 02-11-2010 |
20100031874 | PROCESS AND APPARATUS FOR GROWING A CRYSTALLINE GALLIUM-CONTAINING NITRIDE USING AN AZIDE MINERALIZER - An apparatus and associated method for large-scale manufacturing of gallium nitride is provided. The apparatus comprises a large diameter autoclave and a raw material basket. Methods include metered addition of dopants in the raw material and control of the atmosphere during crystal growth. The apparatus and methods are scalable up to very large volumes and are cost effective. | 02-11-2010 |
20100058978 | METHOD AND APPARATUS FOR PRODUCING NANOCRYSTALS - The present disclosure describes a method and an apparatus for making nanomaterials. In particular, the present innovation provides an apparatus that can be used to produce nanocrystals and/or nanorods of noble metals. The disclosure also provides methods that can be advantageously used to produce gold nanocrystals/nanorods with aspect ratios higher than 4.0. | 03-11-2010 |
20100107969 | Method for manufacturing group III nitride single crystals - An underlying film | 05-06-2010 |
20110088613 | PROCESS FOR CONTROLLING THE GROWTH OF A RALOXIFENE HYDROCHLORIDE CRYSTAL - A process is described for controlling the growth of a raloxifene hydrochloride crystal i.e. for the control of raloxifene hydrochloride crystal size, comprising the steps of: a) heating under reflux a mass comprising crystalline raloxifene hydrochloride, methanol and water for a time of about 10 minutes; b) cooling the mass to 30-35° C., and c) checking the crystal size, in which steps a), b) and c) are repeated for a number of cycles n, until the desired crystal size is obtained. | 04-21-2011 |
20110253032 | APPARATUS FOR MANUFACTURING QUANTUM DOT WITH A PLURALITY OF HEATING ZONES AND METHOD FOR MANUFACTURING QUANTUM DOT - Disclosed is a technology of producing quantum dots that are nano-size semiconducting crystals. A quantum dot producing apparatus includes a mixer for mixing precursor solutions, and a heating furnace with a plurality of heating areas providing different temperature conditions to heat the precursor mixture. Between the heating areas, a buffer may be installed which provides a low-temperature condition to prevent addition nucleation. Through this configuration, nucleation is separated from nuclear growth, uniformity in particle size of quantum dots is improved, which enables the mass-production of quantum dots, rather than a quantum dot producing apparatus with a single heating area that provides a constant temperature condition. | 10-20-2011 |
20120167818 | Methods for Controlling Crystal Growth, Crystallization, Structures and Phases in Materials and Systems - This invention relates to novel methods for affecting, controlling and/or directing various crystal formation, structure formation or phase formation/phase change reaction pathways or systems by exposing one or more components in a holoreaction system to at least one spectral energy pattern. In a first aspect of the invention, at least one spectral energy pattern can be applied to a crystallization reaction system. In a second aspect of the invention, at least one spectral energy conditioning pattern can be applied to a conditioning reaction system. The spectral energy conditioning pattern can, for example, be applied at a separate location from the reaction vessel (e.g., in a conditioning reaction vessel) or can be applied in (or to) the reaction vessel, but prior to other (or all) crystallization reaction system participants being introduced into the reaction vessel. | 07-05-2012 |
20120204783 | CONTAINER FOR CRYSTALLIZATION, CRYSTALLIZATION APPARATUS, METHOD FOR PRODUCING CRYSTAL, AND SUBSTRATE FOR CRYSTALLIZATION - A container for crystallization of a biopolymer of the invention is provided that includes a structure wherein two or more noble metals and/or noble metal-coated bodies are arranged at an interval of 1 to 1,000 nm. There are also provided a crystallization apparatus of a biopolymer, comprising the container for crystallization of a biopolymer, a method for producing a biopolymer crystal, comprising the steps of preparing the container for crystallization of a biopolymer, and making the structure contact with a biopolymer solution, and a substrate for crystallization of a biopolymer, having a structure wherein two or more noble metals and/or noble metal-coated bodies are arranged at an interval of 1 to 1,000 nm. | 08-16-2012 |
20130145983 | PROCESS FOR PREPARING THE CRYSTALLINE FORM A OF (2-[3-CYANO-4-(2-I-BUTOXY)PHENYL]-4-METHYL-5-THIAZOLE-CARBOXYLIC ACID (FEBUXOSTAT) - The invention relates to a novel process for preparing the crystalline from A of febuxostat by crystallization in a solvent selected from ethyl acetate, isopropyl acetate or ethyl formiate. | 06-13-2013 |
20130174778 | Controlled Fabrication of Semiconductor-Metal Hybrid Nano-Heterostructures via Site-Selective Metal Photodeposition - A method of synthesizing colloidal semiconductor-metal hybrid heterostructures is disclosed. The method includes dissolving semiconductor nanorods in a solvent to form a nanorod solution, and adding a precursor solution to the nanorod solution. The precursor solution contains a metal. The method further includes illuminating the combined precursor and nanorod solutions with light of a specific wavelength. The illumination causes the deposition of the metal in the precursor solution onto the surface of the semiconductor nanorods. | 07-11-2013 |
20130199439 | DEVICE AND METHOD FOR CRYSTALLIZING INORGANIC OR ORGANIC SUBSTANCES - A device for crystallising a molecule to be crystallised, which includes: at least one crystallisation cell that includes a crystallisation chamber for receiving a first solution S1 containing the molecule to be crystallised and the crystal seeds thereof, a dialysis membrane, and a container to be filled with a second solution S2 that contains constituents selected from the group containing crystallisation agents, additives and buffers; and at least one image acquisition means. The crystallisation device is characterized in that it includes: at least one addition means arranged to add, to the container, constituents selected from the group containing crystallisation agents, additives and buffers of solution S2; and/or at least one sampling means arranged to collect, from the container, all or a portion of solution S2. The invention also relates to a crystallisation method. | 08-08-2013 |
20140020618 | METHOD FOR PRODUCING CALCITE SINGLE CRYSTAL - The objective of the present invention is to provide a method for producing a calcite single crystal which is appropriately fine in a large scale with no difficulty. The method for producing a calcite single crystal according to the present invention is characterized in comprising the steps of mixing raw material calcium carbonate with an ammonium nitrate aqueous solution to obtain a raw material mixed liquid, wherein pH of the ammonium nitrate aqueous solution is not less than 7.0 and not more than 8.0, a concentration of the ammonium nitrate aqueous solution is not less than 2 M, and a concentration of calcium carbonate in the raw material mixed liquid is not less than 4 g/L and not more than 16 g/L; heating the raw material mixed liquid at not less than 125° C.; and then gradually cooling the raw material mixed liquid. | 01-23-2014 |
20140069326 | METHOD FOR PRODUCING COLLOIDAL CRYSTAL AND COLLOIDAL CRYSTAL - [Problem] To provide a method for producing a colloidal crystal, wherein the method is easily controlled and is capable of dealing with a wide range of types of colloidal particle. | 03-13-2014 |
20150047555 | SOLUTION-BASED SYNTHESIS OF DOPED ZNO NANOSTRUCTURES - Methods of making electrically conductive, doped zinc oxide nanowires and nanowire films are provided. The methods comprises the steps of forming an aqueous solution comprising a dopant-containing precursor salt, a zinc-containing precursor salt and a pH buffering agent and heating the aqueous solution to a temperature below its boiling point in the presence of seed crystals, whereby doped zinc oxide nanowires are grown in situ from the seed crystals in the aqueous solution. | 02-19-2015 |
20150128848 | Method of Preparing Nanostructured Single Crystal Silver - A method of preparing nanostructured single crystal silver, comprising placing a high-conductive molded porous active carbon containing chloride ions, which has been reductively treated, into a silver-containing precursor solution. After several hours at room temperature, the nanostructured single crystal silver grows on the surface of the active carbon. The silver-containing precursors and appropriate amount of chlorine provide a crystal nucleus and a slow stable crystal growth environment which are required for single crystal silver growth, and said nanostructured silver single crystals could be obtained with various morphologies by controlling the concentration of the silver-containing precursor solution and the growth time. The method of the invention is an environmentally friendly synthesis method with the nanostructured single crystal silver grows on the surface of the molded porous active carbon at room temperature, which is pollution-free and does not need any additives; the single crystal could be obtained in high yield and high purity, and can be separated from the molded porous active carbon easily, the grown silver falls off naturally and the active carbon is renewable through sonication with absolute ethanol or alkaline solutions; and the obtained single crystal silver is characterized by having high mechanical strength, good conductivity and less crystal defects. | 05-14-2015 |
20150315721 | ONE STEP SYNTHESIS OF CORE/SHELL NANOCRYSTAL QUANTUM DOTS - Disclosed herein are compositions and one-step synthesis of core/shell nanocrystal quantum dots. In an embodiment, a method of making a nanocrystal includes mixing at least one cationic precursor, at least one anionic precursor, and at least one solvent to form a mixture, heating the mixture, precipitating the mixture to form a nanocrystal precipitate, and isolating the nanocrystal precipitate. The formed nanocrystal comprises an outer shell encapsulating an inner core and exhibits substantial crystallinity, monodispersity, and reproducibility. | 11-05-2015 |
20150354091 | CRYSTALLIZER AND METHOD OF CRYSTALLIZATION - To provide a crystallizer to generate pseudo non-gravity environment by three-dimensional high speed rotation and to minimize influence of gravity in crystallization process for crystallizing a substance from a solution. The crystallizer has turning gear, container | 12-10-2015 |
20160032481 | METHOD AND SYSTEM FOR PRODUCING CRYSTALLINE CALCIUM CARBONATE BY THE COMBINED USE OF TWO GASES WITH DIFFERENT CO2 CONTENT - The invention relates to a particularly energy efficient, two-step method and to a system for the continuous or semi-continuous production of crystalline calcium carbonate (precipitated calcium carbonate, PCC) by reacting calcium hydroxide with CO | 02-04-2016 |
20160097142 | METHODS OF MAKING COCRYSTALS - Disclosed are processes for preparing cocrystals, including processes for scaling up of cocrystal formation, as well as scalable processes for preparing cocrystals. Also disclosed are processes for scaled-op preparation of pterostilbene, progesterone, p-coumaric, and minoxidil cocrystals. Minoxidil cocrystals, such as minoxidil:benzoic acid 1:1 monohydrate cocrystals are also disclosed herein. | 04-07-2016 |
20160159775 | BENZOIMIDAZOL-2-YL PYRIMIDINE MODULATORS OF THE HISTAMINE H4 RECEPTOR - Benzoimidazol-2-yl pyrimidines, purification methods for the same, and pharmaceutical compositions and methods for the treatment of disease states, disorders, and conditions mediated by H | 06-09-2016 |
20160168102 | PREPARATION OF AND FORMULATION COMPRISING A MEK INHIBITOR | 06-16-2016 |
117069000 | With a step of measuring, testing, or sensing | 5 |
20110203515 | Device for crystal growth at intermediate temperatures using controlled semi-active cooling - A crystal growing cell which has computerized temperature control and agitation means to inhibit crystal nucleation. The temperature is controlled semi-actively, i.e., by monitoring the temperature with a thermistor and balancing ambient heat loss with heat added to the system by heating resistors or heating elements. When the chemical is completely dissolved by heating the mixture to a temperature above the saturation temperature, the temperature is lowered. At the saturation temperature the temperature is initially reduced slowly to avoid crystal nucleation. The saturation temperature of the initial solution is selected to be at an intermediate temperature which is high enough that the amount of dissolved material is large enough to produce a large crystal or large crystal clusters, yet not so high that the solubility curve has a large slope and therefore requires a high degree of temperature control to avoid crystal nucleation in the solution. Use of the cell with a variety of chemical solutions, each having the same saturation temperature, facilitates optimization while maintaining a simple, low cost design. | 08-25-2011 |
20120090533 | LOW-TEMPERATURE SYNTHESIS OF COLLOIDAL NANOCRYSTALS - Low-temperature organometallic nucleation and crystallization-based synthesis methods for the fabrication of semiconductor and metal colloidal nanocrystals with narrow size distributions and tunable, size- and shape-dependent electronic and optical properties. Methods include (1) forming a reaction mixture in a reaction vessel under an inert atmosphere that includes at least one solvent, a cationic precursor, an anionic precursor, and at least a first surface stabilizing ligand while stirring at a temperature in a range from about 50° C. to about 130° C. and (2) growing nanocrystals in the reaction mixture for a period of time while maintaining the temperature, the stirring, and the inert-gas atmosphere. | 04-19-2012 |
20130139749 | DEVICE AND METHOD FOR MONITORING CRYSTALLIZATION - A method for crystallizing a substance dissolved in a solvent, including the following steps: introducing a solvent volume containing the substance into a chamber having a preset temperature, humidity, and gas composition, adding a predetermined volume of a precipitant to the solvent volume containing the substance, allowing the solvent to evaporate while simultaneously observing structural changes in the solvent volume containing the substance and the precipitant by means of dynamic light scattering, detecting weight changes and determining the molarities, making an association with the location in the phase diagram on the basis of the DLS measurement and the results of the molarity determination, allowing a predetermined number of crystal nuclei to form by adding solvent or adding precipitant, putting the solvent volume containing the substance and the precipitant into a metastable state by adding solvent and/or protein solution or by allowing the concentration of the dissolved substance to decrease by allowing nucleation cores to form, maintaining the metastable state by adding a predetermined amount of the substance to the solvent volume containing the substance and the precipitant or allowing the solvent to evaporate until at least one crystal of a predetermined size is formed. | 06-06-2013 |
20150007765 | CLBO Crystal Growth - A solution-stirring top-seeded solution-growth method for forming CLBO of the type where water is added to a precursor mixture, where heavy water is substituted for the water. | 01-08-2015 |
20160160380 | Method for crystal growth in a cell in direct thermal contact with the ambient environment - A crystal growing cell which has computerized temperature control and agitation means to inhibit crystal nucleation. The temperature is controlled semi-actively, i.e., by monitoring the temperature with a thermistor and balancing ambient heat loss with heat added to the system by heating resistors or heating elements. When the chemical is completely dissolved by heating the mixture to a temperature above the saturation temperature, the temperature is lowered. At the saturation temperature the temperature is initially reduced slowly to avoid crystal nucleation. The saturation temperature of the initial solution is selected to be at an intermediate temperature which is high enough that the amount of dissolved material is large enough to produce a large crystal or large crystal clusters, yet not so high that the solubility curve has a large slope and therefore requires a high degree of temperature control to avoid crystal nucleation in the solution. | 06-09-2016 |
117070000 | Growth accompanied by material removal (other than the product) from solution (e.g., solvent evaporation, osmosis) | 3 |
20080295763 | Apparatus for manufacturing Group III nitride semiconductor and method for manufacturing Group III nitride semiconductor - A Group III nitride semiconductor crystal is grown according to a flux method. After completion of the crystal-growing process, Na is discharged from a crucible by a recovery device when the temperature of the crucible is 100° C. or higher, and is held in a holding vessel in a liquid state. The recovered Na can be drawn from the holding vessel via a faucet. Na remaining after completion of the crystal-growing process does not contain impurities of high vapor pressure, and is thus of high purity. Therefore, reuse, as flux, of the recovered Na enables manufacture of a Group III nitride semiconductor whose concentration of impurities is low. | 12-04-2008 |
20140318440 | COATED SUBSTRATE APPARATUS AND METHOD - A coated substrate is formed with aligned objects such as small molecules, macromolecules and nanoscale particulates, such as inorganic, organic or inorganic/organic hybrid materials. In accordance with one or more embodiments, an apparatus or method involves an applicator having at least one surface patterned with protruded or indented features, and a coated substrate including a solution-based layer of objects having features and morphology attributes arranged as a function of the protruded or indented features. | 10-30-2014 |
20140331916 | ZnO STRUCTURES AND METHODS OF USE - ZnO structures comprising crystalline ZnO micro or nanorods and methods for making and using these ZnO structures are provided. The side surface of the central portion of each rod may comprise planes of the form {1 0 −1 0}, {0 1 −1 0}, {−1 1 0 0}, {−1 0 1 0}, {0 −1 1 0} and {1 −1 0 0}, with central edge regions including a crystallographic plane of the form {2 −1 −1 0} or {−2 1 1 0}. The tip of the rod may comprise planes of the form {1 0 −1 1} {0 1 −1 1}, {−1 1 0 1}, {−1 0 1 1}, {0 −1 1 1} and {1 −1 0 1} with tip edge regions including a crystallographic plane of the form {2 −1 −1 2} or {−2 1 1 2}. The rods may be joined at or near their bases to form the “flower-like” morphology. In an embodiment, a synthesis mixture is prepared by dissolving a zinc salt in an alcohol solvent, followed by addition of at least two additives. The zinc salt may be zinc nitrate hexahydrate, the first additive may be benzyl alcohol and the second additive may be urea. | 11-13-2014 |
117071000 | At pressure above 1 atmosphere (e.g., hydrothermal processes) | 25 |
20090078193 | PROCESS FOR PRODUCING A NITRIDE SINGLE CRYSTAL AND APPARATUS THEREFOR - A growth apparatus is used having a plurality of crucibles | 03-26-2009 |
20090301387 | HIGH PRESSURE APPARATUS AND METHOD FOR NITRIDE CRYSTAL GROWTH - A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. IN a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively. | 12-10-2009 |
20090301388 | CAPSULE FOR HIGH PRESSURE PROCESSING AND METHOD OF USE FOR SUPERCRITICAL FLUIDS - An improved capsule for processing materials or growing crystals in supercritical fluids. The capsule is scalable up to very large volumes and is cost effective according to a preferred embodiment. In conjunction with suitable high pressure apparatus, the capsule is capable of processing materials at pressures and temperatures of 0.2-8 GPa and 400-1500° C., respectively. Of course, there can be other variations, modifications, and alternatives. | 12-10-2009 |
20100031875 | PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF GALLIUM NITRIDE BOULES - A method for large-scale manufacturing of gallium nitride boules. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and grown ammonothermally. The seed orientation and mounting geometry are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus. The method is scalable up to very large volumes and is cost effective. | 02-11-2010 |
20100031876 | PROCESS AND APPARATUS FOR LARGE-SCALE MANUFACTURING OF BULK MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE - A method for large-scale manufacturing of gallium nitride includes a process for reducing and/or minimizing contamination in the crystals, for solvent addition to an autoclave, for improving or optimizing the solvent atmosphere composition, for removal of the solvent from the autoclave, and for recycling of the solvent. The method is scalable up to large volumes and is cost effective. | 02-11-2010 |
20100095882 | REACTOR DESIGN FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS - The present disclosure proves for new design of reactors used for ammonothermal growth of III nitride crystals. The reactors include a region intermediate a source dissolution region and a crystal growth region configured to provide growth of high quality crystals at rates greater than 100 μm/day. In one embodiment, multiple baffle plates having openings whose location is designed so that there is no direct path through the intermediate region, or with multiple baffle plates having differently sized openings on each plate so that the flow is slowed down and/or exhibit greater mixing are described. The disclosed designs enables obtaining high temperature difference between the dissolution region and the crystallization region without decreasing conductance through the device. | 04-22-2010 |
20120073494 | Process and Apparatus for Large-Scale Manufacturing of Bulk Monocrystalline Gallium-Containing Nitride - A method for large-scale manufacturing of gallium nitride includes a process for reducing and/or minimizing contamination in the crystals, for solvent addition to an autoclave, for improving or optimizing the solvent atmosphere composition, for removal of the solvent from the autoclave, and for recycling of the solvent. The method is scalable up to large volumes and is cost effective. | 03-29-2012 |
20120118223 | High Pressure Apparatus and Method for Nitride Crystal Growth - A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. In a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively. | 05-17-2012 |
20120137960 | Process for Preparing Various Morphology NTE Compound ZrW0.5Mo1.5O8 - A process for preparing various morphology NTE compound ZrW | 06-07-2012 |
20120304917 | HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL - Present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones. | 12-06-2012 |
20130206057 | HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL - Present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones. | 08-15-2013 |
20130263775 | APPARATUS USED FOR THE GROWTH OF GROUP-III NITRIDE CRYSTALS UTILIZING CARBON FIBER CONTAINING MATERIALS AND GROUP-III NITRIDE GROWN THEREWITH - A method and apparatus for growing crystals in a reactor vessel, wherein the reactor vessel uses carbon fiber containing materials as a structural element to contain the materials for growing the crystals as a solid, liquid or gas within the reactor vessel, such that the reactor vessel can withstand pressures or temperatures necessary for the growth of the crystals. The carbon fiber containing materials encapsulate at least one component of the reactor vessel, wherein stresses from the encapsulated component are transferred to the carbon fiber containing materials. The carbon fiber containing materials may be wrapped around the encapsulated component one or more times sufficient to maintain a desired pressure differential between an exterior and interior of the encapsulated component. | 10-10-2013 |
20140116326 | REACTOR DESIGNS FOR USE IN AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS - Reactor designs for use in ammonothermal growth of group-III nitride crystals. Internal heating is used to enhance and/or engineer fluid motion, gas mixing, and the ability to create solubility gradients within a vessel used for the ammonothermal growth of group-III nitride crystals. Novel baffle designs are used for control and improvement of continuous fluid motion within a vessel used for the ammonothermal growth of group-III nitride crystals. | 05-01-2014 |
20140174340 | METHODS FOR PRODUCING IMPROVED CRYSTALLINITY GROUP III-NITRIDE CRYSTALS FROM INITIAL GROUP III-NITRIDE SEED BY AMMONOTHERMAL GROWTH - The present invention discloses methods to create higher quality group III-nitride wafers that then generate improvements in the crystalline properties of ingots produced by ammonothermal growth from an initial defective seed. By obtaining future seeds from carefully chosen regions of an ingot produced on a bowed seed crystal, future ingot crystalline properties can be improved. Specifically the future seeds are optimized if chosen from an area of relieved stress, on a cracked ingot or from a carefully chosen N-polar compressed area. When the seeds are sliced out, miscut of 3-10° helps to itnprove structural quality of successive growth. Additionally a method is proposed to improve crystal quality by using the ammonothermal method to produce a series of ingots, each using a specifically oriented seed from the previous ingot. When employed, these methods enhance the quality of Group III nitride wafers and thus improve the efficiency of any subsequent device. | 06-26-2014 |
20140209012 | SINGLE-CRYSTAL SUBSTRATE, GROUP-III NITRIDE CRYSTAL OBTAINED USING THE SAME, AND PROCESS FOR PRODUCING GROUP-III NITRIDE CRYSTAL - Provided is a base substrate with which a Group-III nitride crystal having a large area and a large thickness can be grown while inhibiting crack generation. A single-crystal substrate for use in growing a Group-III nitride crystal thereon, which satisfies the following expression (1), wherein Z1 (μm) is an amount of warpage of physical shape in a growth surface of the single-crystal substrate and Z2 (μm) is an amount of warpage calculated from a radius of curvature of crystallographic-plane shape in a growth surface of the single-crystal substrate: −4007-31-2014 | |
20140251202 | Synthetic Zinc Phlogopite via Hydrothermal Preparation - This invention relates to synthetically derived zinc phlogopite substrates, of superior aspect ratio, effect pigments comprising such synthetically derived substrates and methods of forming said substrates. More specifically the disclosure describes an improved hydrothermal synthesis of zinc phlogopite suitable as a substrate for interference pigments, barrier and flame retardant applications. | 09-11-2014 |
20140326175 | REACTOR DESIGN FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS - The present disclosure proves for new design of reactors used for ammonothermal growth of III nitride crystals. The reactors include a region intermediate a source dissolution region and a crystal growth region configured to provide growth of high quality crystals at rates greater than 100 μm/day. In one embodiment, multiple baffle plates having openings whose location is designed so that there is no direct path through the intermediate region, or with multiple baffle plates having differently sized openings on each plate so that the flow is slowed down and/or exhibit greater mixing are described. The disclosed designs enable obtaining high temperature difference between the dissolution region and the crystallization region without decreasing conductance through the device. | 11-06-2014 |
20150122172 | APPARATUS FOR PROCESSING MATERIALS AT HIGH TEMPERATURES AND PRESSURES - An apparatus for processing materials at high temperatures comprises a high strength enclosure; a plurality of high strength radial segments disposed adjacent to and radially inward from the high strength enclosure; a liner disposed adjacent to and radially inward from the radical segments; a chamber defined interior to the liner; a heating device disposed within the chamber; and a capsule disposed within the chamber, the capsule configured to hold a supercritical fluid. The apparatus may be used for growing crystals, e.g., GaN, under high temperature and pressure conditions. | 05-07-2015 |
20150292108 | AN APPARATUS AND METHOD FOR GROWING A BULK SINGLE CRYSTAL NITRIDE MATERIAL - An apparatus and method for growing nitride bulk single crystal, including an autoclave having a pre-growth zone and a growth zone. With control of the concentration of a saturated solution in a pre-growth chamber, the oversaturation reaction conditions for the overall process of growth of the nitride bulk single crystal can be regulated. By regulating the liquid level difference of the melt on an upper surface of a seed crystal, nucleation growth of N/Ga is preferentially performed on the surface of the seed crystal, which suppresses polycrystal formation at a gas-liquid interface and improves the growth rate of crystal and the utilization rate of raw materials. | 10-15-2015 |
20160002822 | Production of Free-Standing Crystalline Material Layers - Herein is provided a growth structure for forming a free-standing layer of crystalline material having at least one crystallographic symmetry. The growth structure includes a host substrate and a separation layer disposed on the host substrate for growth of a layer of the crystalline material thereon. The separation layer has a separation layer thickness, and is mechanically weaker than the host substrate and the crystalline material. An array of apertures is in the separation layer, each aperture extending through the separation layer thickness. | 01-07-2016 |
20160010238 | METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH PRESSURE VESSEL | 01-14-2016 |
20160153115 | GROUP III NITRIDE CRYSTALS, THEIR FABRICATION METHOD, AND METHOD OF FABRICATING BULK GROUP III NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA | 06-02-2016 |
20160153118 | GROUP III NITRIDE CRYSTALS, THEIR FABRICATION METHOD, AND METHOD OF FABRICATING BULK GROUP III NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA | 06-02-2016 |
20160194781 | REACTOR VESSELS FOR AMMONOTHERMAL AND FLUX-BASED GROWTH OF GROUP-III NITRIDE CRYSTALS | 07-07-2016 |
20160376726 | HIGH PRESSURE REACTOR AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA - Provided is a high-pressure reactor suitable for a high-pressure process using supercritical ammonia grow bulk crystal of group III nitride having lateral dimension larger than 2 inches or to form various transition metal nitrides. The reactor has nutrient distributed along the reactor's longitudinal axis and seed material positioned at the reactor's inner wall and along the reactor's longitudinal axis. Nutrient diffuses through supercritical ammonia from the reactor's longitudinal axis and deposits on the seed material positioned by the reactor's inner wall. Both the nutrient and seed material are heated by the same heater. Material growth can primarily be due to material diffusion through supercritical ammonia. This configuration and methodology reduce convective movement of supercritical ammonia due to temperature differential, providing a more quiescent environment in which group III nitride or transition metal nitride is formed. | 12-29-2016 |