| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 117054000 | Liquid phase epitaxial growth (LPE) | 78 |
| 20080257255 | CLAD TEXTURED METAL SUBSTRATE FOR FORMING EPITAXIAL THIN FILM THEREON AND METHOD FOR MANUFACTURING THE SAME - The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The present invention provides a clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a silver layer bonded to at least one face of the metallic layer, wherein the silver layer has a {100}<001> cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦9 degree. The textured metal substrate can be manufactured by subjecting the silver sheet containing 30 to 200 ppm oxygen by concentration to the orienting treatment of hot-working and heat-treating, and bonding the metal sheet with the oriented silver sheet by using a surface activated bonding process. | 10-23-2008 |
| 20090000539 | APPARATUS FOR GROWING A NANOWIRE AND METHOD FOR CONTROLLING POSITION OF CATALYST MATERIAL - An apparatus for growing a nanowire includes a crystalline surface, and a feature formed on at least a portion of the crystalline surface. The feature has a region with high surface curvature. A catalyst material is established on the region. | 01-01-2009 |
| 20090038538 | METHOD FOR PRODUCING SINGLE CRYSTAL SILICON CARBIDE - Single crystal SiC, having no fine grain boundaries, a micropipe defect density of 1/cm | 02-12-2009 |
| 20090194017 | METHOD FOR PRODUCING p-TYPE SiC SEMICONDUCTOR SINGLE CRYSTAL - A method for producing a p-type SiC semiconductor single crystal, including: using a solution in which C is dissolved in a Si melt and 30 to 70 at. % Cr and 0.1 to 20 at. % Al, based on a total weight of the Si melt, Cr, and Al, are added to the Si melt, to grow a p-type SiC semiconductor single crystal on a SiC single crystal substrate from the solution. | 08-06-2009 |
| 20110146565 | GROUP III NITRIDE CRYSTAL AND METHOD FOR SURFACE TREATMENT THEREOF, GROUP III NITRIDE STACK AND MANUFACTURING METHOD THEREOF, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method for surface treatment of a group III nitride crystal includes the steps of lapping a surface of a group III nitride crystal using a hard abrasive grain with a Mohs hardness higher than 7, and abrasive-grain-free polishing the lapped surface of the group III nitride crystal using a polishing solution without containing abrasive grain, and the polishing solution without containing abrasive grain has a pH of not less than 1 and not more than 6, or not less than 8.5 and not more than 14. Accordingly, the method for surface treatment of a group III nitride crystal can be provided according to which hard abrasive grains remaining at the lapped crystal can be removed to reduce impurities at the crystal surface. | 06-23-2011 |
| 20110203513 | METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE - In a method of manufacturing a silicon carbide substrate, a defect-containing substrate made of silicon carbide is prepared. The defect-containing substrate has a front surface, a rear surface being opposite to the front surface, and a surface portion adjacent to the front surface. The detect-containing substrate includes a screw dislocation in the surface portion. The front surface of the defect-containing substrate is applied with an external force so that a crystallinity of the surface portion is reduced. After being applied with the external force, the defect-containing substrate is thermally treated so that the crystallinity of the surface portion is recovered. | 08-25-2011 |
| 20120067273 | METHODS FOR EFFICIENTLY MAKING THIN SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL FOR SOLAR CELLS AND THE LIKE - A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means. | 03-22-2012 |
| 20120118221 | METHOD OF PRODUCTION OF SIC SINGLE CRYSTAL - The present invention provides a method of production of an SiC single crystal using the solution method which prevents the formation of defects due to seed tough, i.e., causing a seed crystal to touch the melt, and thereby causes growth of an Si single crystal reduced in defect density. The method of the present invention is a method of production of an SiC single crystal by causing an SiC seed crystal to touch a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal, characterized by making the SiC seed crystal touch the melt, then making the melt rise in temperature once to a temperature higher than the temperature at the time of touch and also higher than the temperature for causing growth. | 05-17-2012 |
| 20120167817 | METHOD AND DEVICE FOR PRODUCING SILICON BLOCKS - A method for producing silicon blocks comprises providing a crucible for receiving a silicon melt, with a base and a plurality of side walls connected to the base, attaching nuclei at least on an inner side of the base of the crucible, the nuclei having a melt temperature, which is greater than the melt temperature of silicon, filling the crucible with the silicon melt, solidifying the silicon melt beginning on the nuclei and removing the solidified silicon from the crucible. | 07-05-2012 |
| 20130118399 | METHODS AND SYSTEMS RELATING TO THE SELECTION OF SUBSTRATES COMPRISING CRYSTALLINE TEMPLATES FOR THE CONTROLLED CRYSTALLIZATION OF MOLECULAR SPECIES - The present invention generally relates to methods and systems relating to the selection of substrates comprising crystalline templates for the controlled crystallization of molecular species. In some embodiments, the methods and systems allow for the controlled crystallization of a molecular species in a selected polymorphic form. In some embodiments, the molecular species is a small organic molecule (e.g., pharmaceutically active agent). | 05-16-2013 |
| 20130192516 | METHOD OF PREPARING CAST SILICON BY DIRECTIONAL SOLIDIFICATION - A method of preparing a silicon melt in a crucible for use in the manufacture of cast silicon, wherein the crucible comprises an opening, an opposing bottom surface, and at least one sidewall joining the opening and the bottom surface. The method comprises charging a silicon spacer to the bottom surface of the crucible; arranging a monocrystalline silicon seed crystal on the silicon spacer such that no surface of the monocrystalline silicon material is in contact with the bottom surface of the crucible; charging polycrystalline silicon feedstock to the crucible; and applying heat through at least one of the opening and the at least one sidewall in order to form a partially melted charge of silicon in the crucible. | 08-01-2013 |
| 20140048012 | METHODS AND APPARATUSES FOR MANUFACTURING CAST SILICON FROM SEED CRYSTALS - Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With these methods, an ingot can be grown that is low in carbon and whose crystal growth is controlled to increase the cross-sectional area of seeded material during casting. | 02-20-2014 |
| 20140069325 | PATTERN FORMING METHOD - According to one embodiment, a pattern forming method includes forming a graphoepitaxy on a substrate, a process of forming a first self-assembly material layer that contains a first segment and a second segment in a depressed portion of the graphoepitaxy, a process of forming a first self-assembly pattern that has a first region containing the first segment, and a second region containing the second segment by performing a phase separation of the first self-assembly material layer, a process of forming a second self-assembly material layer containing a third segment and a fourth segment on a projected portion of the graphoepitaxy, and the first self-assembly pattern, a process of forming a second self-assembly pattern that has a third region containing the third segment, and a fourth region containing the fourth segment by performing a phase separation of the second self-assembly material layer. | 03-13-2014 |
| 20150013589 | METHOD OF MAKING QUANTUM DOTS - Quantum dots and methods of making quantum dots are provided. | 01-15-2015 |
| 20160160384 | METHOD FOR PRODUCING SiC SUBSTRATE - A method for producing a SiC substrate with an epitaxial layer, which can prevent inventory of wafers from unduly increasing and wasteful production, is provided. This is achieved by a method for producing a SiC substrate with an epitaxial layer one at a time, the method comprising growing an epitaxial layer and growing a SiC substrate on a seed crystal substrate, and the method further comprising removing the obtained SiC substrate with the epitaxial layer from the seed crystal substrate. | 06-09-2016 |
| 117055000 | With a step of measuring, testing, or sensing | 2 |
| 20130152850 | METHOD AND APPARATUS FOR MONITORING AND CONTROLLING CRYSTAL GROWTH, AND PROBE SYSTEM - In a method for monitoring and controlling crystal growth during a crystal growing procedure, heights of a plurality of measuring points on a solid-liquid interface of a crystal material disposed in a crucible are measured, and at least one parameter of the crystal growing procedure is optimized based on the measured heights, so that the solid-liquid interface maintains a dome shape with a predetermined curvature during the crystal growing procedure. | 06-20-2013 |
| 20140158041 | METHOD AND DEVICE FOR FABRICATING A LAYER IN SEMICONDUCTOR MATERIAL - The invention concerns a method for fabricating a substrate in semiconductor material characterized in that it comprises the steps of: starting from a donor substrate in a first semiconductor material at an initial temperature, contacting a surface of the donor substrate with a bath of a second semiconductor material held in the liquid state at a temperature higher than the initial temperature, the second semiconductor material being chosen so that its melting point is equal to or lower than the melting point of the first semiconductor material, solidifying the bath material on the surface to thicken the donor substrate with a solidified layer. The invention also concerns a device for implementing the method. | 06-12-2014 |
| 117056000 | Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) | 4 |
| 20110155046 | Method for producing group III nitride semiconductor - In the Na flux method, a target semiconductor layer is separated from a sapphire substrate of a template substrate. The template substrate formed of the sapphire substrate and a GaN layer is placed in a Ga—Na molten mixture. The temperature the molten mixture and the nitrogen pressure are adjusted to 850° C. and 2.5 MPa, respectively. Under the conditions, a part of the GaN layer is melted back until the surface of the sapphire substrate is exposed, so that the remaining portion of the GaN layer is left in the form of a plurality of upright columns. Then, the pressure is elevated to 3 MPa, whereby a target GaN layer is grown on the processed GaN layer. Through lowering temperature, stress due to the difference in linear expansion coefficient and lattice constant between sapphire and GaN is generated, to thereby generate cracks in the processed GaN layer. By virtue of the cracking, the target GaN layer is separated from the sapphire substrate. | 06-30-2011 |
| 20110209659 | CONTROLLING RELATIVE GROWTH RATES OF DIFFERENT EXPOSED CRYSTALLOGRAPHIC FACETS OF A GROUP-III NITRIDE CRYSTAL DURING THE AMMONOTHERMAL GROWTH OF A GROUP-III NITRIDE CRYSTAL - A method for controlling the relative and absolute growth rates of all possible crystallographic planes of a group-III nitride crystal during ammonothermal growth. The growth rates of the various exposed crystallographic planes of the group-III nitride crystal are controlled by modifying the environment and/or conditions within the reactor vessel, which may be subdivided into a plurality of separate zones, wherein each of the zones has their own environment and conditions. The environment includes the amount of atoms, compounds and/or chemical complexes within each of the zones, along with their relative ratios and the relative motion of the atoms, compounds and/or chemical complexes within each of the zones and among the zones. The conditions include the thermodynamic properties each of the zones possess, such as temperatures, pressures and/or densities. | 09-01-2011 |
| 20120304916 | METHOD OF PRODUCING SILICON CARBIDE SINGLE CRYSTAL - A method of producing an SiC single crystal is provided in which an SiC single crystal is grown on a first seed crystal held at a lower end of a seed crystal holder, by immersing the first seed crystal in a source material melt in a crucible; this method of producing an SiC single crystal is characterized by carrying out a treatment that promotes the growth of a polycrystal in a region outside the first seed crystal. | 12-06-2012 |
| 20150315723 | NITRIDE CRYSTAL AND METHOD FOR PRODUCING THE SAME - A nitride crystal which encircles an outer periphery of a seed crystal, the nitride crystal in an embodiment includes: a first partial region, and a second partial region that has optical characteristics different from those of the first partial region and has optical characteristics which indicate the crystal orientation. | 11-05-2015 |
| 117058000 | With pretreatment of epitaxy substrate (e.g., autodoping control, cleaning, polishing, leveling, masking) | 27 |
| 20080295762 | METHOD FOR CONTROL OF SHAPE AND SIZE OF PB-CHALCOGENIDE NANOPARTICLES - Disclosed is a method for producing, controlling the shape and size oft Pb-chalcogenide nanoparticles. The method includes preparing a Pb (Pb) precursor containing Pb and a carboxylic acid dissolved in a hydrocarbon solution and preparing a chalcogen element precursor containing a chalcogen element dissolved in a hydrocarbon solution. The amount of Pb and chalcogen in the respective precursor affords for a predetermined Pb:chalcogen element ratio to be present when the Pb precursor is mixed with the chalcogen element precursor. The Pb precursor is mixed with the chalcogen element precursor to form a Pb-chalcogen mixture in such a manner that Pb-chalcogenide nanoparticle nucleation does not occur. A nucleation and growth solution containing a surfactant is also prepared by heating the solution to a nucleation temperature sufficient to nucleate nanoparticles when the Pb-chalcogen element mixture is added. Upon injection of the Pb-chalcogen element mixture into the heated nucleation and growth solution, Pb-chalcogenide nanoparticles nucleate and a Pb-chalcogenide nanoparticle solution is formed, which is thereafter cooled to a growth temperature that is below the nucleation temperature. The Pb-chalcogenide nanoparticle solution at the growth temperature is held at the growth temperature for a predetermined time period such that a desired nanoparticle size is obtained. The Pb:chalcogen element ratio and a surfactant in the nucleation and growth solution can control the shape of the Pb-chalcogenide nanoparticles. The nucleation temperature, the growth temperature, the time at which the Pb-chalcogenide nanoparticle solution is held at the growth temperature and a surfactant can control the size of the Pb-chalcogenide nanoparticles. | 12-04-2008 |
| 20100229786 | Method for Growing Group III Nitride Crystal - A III-nitride crystal growth method that enables growing large-scale crystal under a liquid-phase technique is made available. The present III-nitride crystal growth method is a method of growing III-nitride crystal ( | 09-16-2010 |
| 20100307404 | Method for manufacturing III metal nitride single crystal - It is used a substrate main body | 12-09-2010 |
| 20110030610 | HIGH-PRODUCTIVITY POROUS SEMICONDUCTOR MANUFACTURING EQUIPMENT - This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer/multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi-junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further the disclosure is applicable to the general fields of Photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics. | 02-10-2011 |
| 20110100292 | METHOD FOR GROWING GaN CRYSTAL - A method for growing a GaN crystal includes a step of preparing a substrate ( | 05-05-2011 |
| 20110232564 | METHOD OF GROWING GALLIUM NITRIDE CRYSTAL AND METHOD OF MANUFACTURING GALLIUM NITRIDE CRYSTAL - In a method of growing GaN crystal in one aspect, the following steps are performed. An underlying substrate is prepared. Then, a mask layer having an opening portion and composed of SiO | 09-29-2011 |
| 20110247548 | Method For Fabricating Of ZnO Particle And Method For Fabricating Of ZnO Rod - Disclosed herein are a method for preparing zinc oxide (ZnO) nanoparticles and a method for preparing ZnO nanorods. The method for preparing ZnO nanoparticles may include: preparing a growth solution containing a zinc salt, a precipitator, and a growth inhibitor; and applying heat to the growth solution to prepare ZnO nanoparticles. Moreover, the method for preparing ZnO nanorods may include: forming a ZnO seed layer on a substrate; forming a pattern layer including a plurality of holes on the ZnO seed layer; preparing a growth solution containing a zinc salt, a precipitator, and a growth inhibitor; and immersing the substrate including the pattern layer in the growth solution such that ZnO nanorods are grown in the holes. | 10-13-2011 |
| 20110265708 | METHOD OF HETEROEPITAXY - Epitaxy is carried out by immersing a single crystal substrate having a first principal surface, a second principal surface and a dislocation exposed on the first principal surface into an electrolytic solution including a cation of a metal having a melting point; carrying out electrolytic plating on the first principal surface to deposit the metal on the dislocation so as to cover the dislocation with the metal but leave a portion of the first principal surface where the dislocation is exposed uncovered with the metal; and causing epitaxy of a semiconductor layer on both the portion of the first principal surface and the metal covering the dislocation at a temperature below the melting point. | 11-03-2011 |
| 20120017825 | METHOD ASSOCIATED WITH A CRYSTALLINE COMPOSITION AND WAFER - A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm | 01-26-2012 |
| 20120118222 | METHOD OF MANUFACTURING GaN-BASED FILM - A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 1.0 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided. | 05-17-2012 |
| 20120174855 | METHOD FOR MAKING EPITAXIAL STRUCTURE - A method for making an epitaxial structure is provided. The method includes following steps. A substrate having an epitaxial growth surface is provided. A buffer layer is formed on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. An epitaxial layer is epitaxially grown on the buffer layer. The substrate is removed. | 07-12-2012 |
| 20120174856 | METHOD FOR MAKING EPITAXIAL STRUCTURE - A method for making an epitaxial structure is provided. The method includes the following steps. A substrate is provided. The substrate has an epitaxial growth surface for growing epitaxial layer. A carbon nanotube layer is placed on the epitaxial growth surface. An epitaxial layer is epitaxially grown on the epitaxial growth surface. The carbon nanotube layer is removed. The carbon nanotube layer can be removed by heating. | 07-12-2012 |
| 20130042801 | OFF-AXIS EPITAXIAL LIFT OFF PROCESS - Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process- and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of <110> at 0°. | 02-21-2013 |
| 20130118400 | METHOD OF FORMING EPITAXIAL ZINC OXIDE FILMS - The present invention is directed to a method of forming an epitaxial zinc oxide film on a substrate. The method includes forming an array of nanorods at least substantially perpendicular to the substrate in an aqueous solution; and growing the array of nanorods in an at least substantially lateral direction in the aqueous solution such that adjacent nanorods coalesce to form the epitaxial film. The present invention also relates to the films thus obtained and devices containing said films. | 05-16-2013 |
| 20130160699 | Method of Manufacturing III-Nitride Crystal - Provided is a method of manufacturing III-nitride crystal having a major surface of plane orientation other than {0001}, designated by choice, the III-nitride crystal manufacturing method including: a step of slicing III-nitride bulk crystal through a plurality of planes defining a predetermined slice thickness in the direction of the designated plane orientation, to produce a plurality of III-nitride crystal substrates having a major surface of the designated plane orientation; a step of disposing the substrates adjoining each other sideways in a manner such that the major surfaces of the substrates parallel each other and such that any difference in slice thickness between two adjoining III-nitride crystal substrates is not greater than 0.1 mm; and a step of growing III-nitride crystal onto the major surfaces of the substrates. | 06-27-2013 |
| 20130199438 | METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL AND METHOD FOR PRODUCING A GaN SUBSTRATE - The present invention provides a method for producing a Group III nitride semiconductor single crystal having excellent crystallinity, and a method for producing a GaN substrate having excellent crystallinity, the method including controlling melting back. Specifically, a mask layer is formed on a GaN substrate serving as a growth substrate. Then, a plurality of trenches which penetrate the mask layer and reach the GaN substrate are formed through photolithography. The obtained seed crystal and raw materials of a single crystal are fed to a crucible and subjected to treatment under pressurized and high temperature conditions. Portions of the GaN substrate exposed to the trenches undergo melting back with a flux. Through dissolution of the GaN substrate, the dimensions of the trenches increase, to provide large trenches. The GaN layer is grown from the surface of the mask layer as a starting point. | 08-08-2013 |
| 20130233238 | Methods and Mask Structures for Substantially Defect-Free Epitaxial Growth - Disclosed are methods and mask structures for epitaxially growing substantially defect-free semiconductor material. In some embodiments, the method may comprise providing a substrate comprising a first crystalline material, where the first crystalline material has a first lattice constant; providing a mask structure on the substrate, where the mask structure comprises a first level comprising a first opening extending through the first level (where a bottom of the first opening comprises the substrate), and a second level on top of the first level, where the second level comprises a plurality of second trenches positioned at a non-zero angle with respect to the first opening. The method may further comprise epitaxially growing a second crystalline material on the bottom of the first opening, where the second crystalline material has a second lattice constant different than the first lattice constant and defects in the second crystalline material are trapped in the first opening. | 09-12-2013 |
| 20130255565 | METHOD FOR MAKING EPITAXIAL STRUCTURE - A method for making an epitaxial structure includes the following steps. A substrate having an epitaxial growth surface is provided. A buffer layer is formed on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. A first epitaxial layer is epitaxially grown on the buffer layer. The substrate and the buffer layer are removed to expose a second epitaxial growth surface. A second epitaxial layer is epitaxially grown on the second epitaxial growth surface. | 10-03-2013 |
| 20130255566 | METHOD FOR MAKING EPITAXIAL STRUCTURE - A method for making an epitaxial structure includes the following steps. A substrate having an epitaxial growth surface is provided. A buffer layer is formed on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. A first epitaxial layer is epitaxially grown on the buffer layer. The substrate and the buffer layer are removed to expose a second epitaxial growth surface. A second epitaxial layer is epitaxially grown on the second epitaxial growth surface. | 10-03-2013 |
| 20130333612 | PHOTOALIGNMENT OF MATERIALS INCLUDING LIQUID CRYSTALS - Embodiments described herein relate to compositions, devices, and methods for the alignment of certain materials including liquid crystals. In some cases, a photoresponsive material include a moiety capable of undergoing a di-pi-methane rearrangement. Methods described herein may provide chemically and/or thermally stable alignment materials for use in a various technologies, including transistors, luminescent devices, and liquid crystal devices. | 12-19-2013 |
| 20130333613 | METHOD FOR SURFACTANT CRYSTAL GROWTH OF A METAL-NONMETAL COMPOUND - Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the seed crystal below a minimal temperature required for dissolving MN molecules in the wetting layer and above a melting point of the first metal, each one of the MN molecules being formed from an atom of a second metal and an atom of a first nonmetal, introducing the MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of the wetting layer between the MN surfactant monolayer and the surface of the seed crystal, and regulating a thickness of the wetting layer, thereby growing an epitaxial layer of the MN compound on the seed crystal. | 12-19-2013 |
| 20140048013 | SEED LAYER FOR ZnO AND DOPED-ZnO THIN FILM NUCLEATION AND METHODS OF SEED LAYER DEPOSITION - Zinc oxide layer, including pure zinc oxide and doped zinc oxide, can be deposited with preferred crystal orientation and improved electrical conductivity by employing a seed layer comprising a metallic element. By selecting metallic elements that can easily crystallized at low temperature on glass substrates, together with possessing preferred crystal orientations and sizes, zinc oxide layer with preferred crystal orientation and large grain size can be formed, leading to potential optimization of transparent conductive oxide layer stacks. | 02-20-2014 |
| 20140137794 | Method of Preparing A Directional Solidification System Furnace - A method of preparing a directional solidification system (DSS) furnace for use in semiconductor or solar manufacturing includes slicing a plurality of cylindrical rods to produce a plurality of rectangular seed bricks, a plurality of corner portions, and a plurality of quarter sections, and cropping the plurality of rectangular seed bricks into a plurality of rectangular seeds. | 05-22-2014 |
| 20140360426 | Method for Producing a Group III Nitride Semiconductor Crystal and Method for Producing a GaN Substrate - The present invention provides a method for producing a Group III nitride semiconductor crystal and a GaN substrate, in which the transfer of dislocation density or the occurrence of cracks can be certainly reduced on a growth substrate, and the Group III nitride semiconductor crystal can be easily separated from a seed crystal. A mask layer is formed on a GaN substrate, to thereby form an exposed portion of the GaN substrate, and an unexposed portion of the GaN substrate. Through a flux method, a GaN layer is formed on the exposed portions of the GaN substrate in a molten mixture containing at least Group III metal and Na. At that time, non-crystal portions containing the components of the molten mixture are formed on the mask layer so as to be covered with the GaN layer grown on the GaN substrate and the mask layer. | 12-11-2014 |
| 20150329988 | USE OF FREESTANDING NITRIDE VENEERS IN SEMICONDUCTOR DEVICES - Thin freestanding nitride veneers can be used for the fabrication of semiconductor devices. These veneers are typically less than 100 microns thick. The use of thin veneers also eliminates the need for subsequent wafer thinning for improved thermal performance and 3D packaging. | 11-19-2015 |
| 20150368833 | LASER EPITAXIAL LIFT-OFF OF HIGH EFFICIENCY SOLAR CELL - An epitaxially grown layer III-V solar cell is separated from the growth substrate. A sacrificial epitaxial layer is embedded between the GaAs wafer and the solar cell. The sacrificial layer is damaged by absorbing IR laser radiation. A laser is chosen with the right wavelength, pulse width and power. The radiation is not absorbed by either the GaAs wafer or the solar cell. No expensive ion implantation or lateral chemical etching of a sacrificial layer is needed. The solar cell is detached from the growth wafer by propagating a crack through the damaged layer. The active layer is transferred wafer-scale to inexpensive, flexible, organic substrate. The process allows re-using of the wafer to grow new cells, resulting in savings in raw materials and grinding and etching costs amounting to up to 30% of the cost of the cell. Several cells are integrated on a common blanket polyimide sheet and interconnected by copper plating. The blanket is covered with a transparent spray-on polyimide that replaces the cover glass. The solar cell is stress-balanced to remain flat on orbit. | 12-24-2015 |
| 20160108552 | COMPOSITE SUBSTRATE, METHOD FOR FABRICATING SAME, FUNCTION ELEMENT, AND SEED CRYSTAL SUBSTRATE - A composite substrate includes a polycrystalline ceramic substrate, a silicon substrate directly bonded to the polycrystalline ceramic substrate, a seed crystal film formed on the silicon substrate by vapor phase process and made of a nitride of a group 13 element, and a gallium nitride crystal layer grown on the seed crystal film by flux method. | 04-21-2016 |
| 117060000 | Including a vertical dipping system | 11 |
| 20090000540 | LIQUID-PHASE GROWTH APPARATUS AND METHOD - A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a raw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion. | 01-01-2009 |
| 20120097092 | APPARATUS FOR GROWING SINGLE CRYSTALS - A crystal growth apparatus includes a vacuum sealable container, a crucible in the vacuum sealable container. The crucible can receive a polycrystalline material. The crucible comprises a seed well configured to hold a seed crystal. The wall of the crucible can include a base layer of a first material and a coated layer of a second material. The base layer provides mechanical strength to the crucible. A heater can heat the polycrystalline material to form a melt in contact with the seed crystal. The coated layer of the crucible allows a single crystal to grow in the melt. | 04-26-2012 |
| 20130042802 | METHOD OF PRODUCTION OF SIC SINGLE CRYSTAL - The present invention provides a method of production of SiC single crystal using the solution method which prevents the formation of defects due to causing a seed crystal to touch the melt for seed touch, and thereby causes growth of an Si single crystal reduced in defect density. The method of the present invention is a method of production of an SiC single crystal which causes an SiC seed crystal to touch a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal, characterized by making the SiC seed crystal touch the melt in the state where the C is not yet saturated. | 02-21-2013 |
| 20140261156 | Method of Forming a Crystallized Silicon Layer on the Surface of a Plurality of Substrates - The present invention concerns a method of forming, by liquid phase epitaxial growth, on the surface of a plurality of substrates, a layer of crystallised silicon having a grain size greater than or equal to 200 μm, comprising at least the steps consisting of: (i) arranging a liquid bath formed from a liquid metal solvent phase in which liquid silicon is homogeneously dispersed; (ii) immersing, in the bath of step (i), said substrates ( | 09-18-2014 |
| 20150013590 | SEED CRYSTAL HOLDING SHAFT FOR USE IN SINGLE CRYSTAL PRODUCTION DEVICE, AND METHOD FOR PRODUCING SINGLE CRYSTAL - The aim of the present invention is to provide a seed crystal holding shaft that is used in a device for producing single crystals by a solution process that allows for faster growth of SiC single crystals than in the past, and a method for producing single crystals by the solution process. The seed crystal holding shaft used in a device for producing single crystals by the solution process is a seed crystal holding shaft wherein at least a portion of a side of the seed crystal holding shaft is covered by a reflectance member having a higher reflectance than the reflectance of the seed crystal holding shaft and the reflector member is disposed such that there is a space between the reflector member and the seed crystals held on the end face of the seed crystal holding shaft. | 01-15-2015 |
| 20150075419 | METHOD FOR PRODUCING SiC SINGLE CRYSTAL - A method for producing a SiC single crystal having a large growth thickness of 10 mm or greater by a solution process is provided. This is achieved by a method for producing a SiC single crystal, wherein a SiC seed crystal substrate is contacted with a Si—C solution with a temperature gradient, in which the temperature decreases from the interior toward the surface, to grow a SiC single crystal, and wherein the temperature gradient in the surface region of the Si—C solution is increased at least once while the SiC single crystal is grown with the (000-1) face as the growth surface, to grow a SiC single crystal having a growth thickness of 10 mm or greater. | 03-19-2015 |
| 20150299896 | METHOD FOR PRODUCING N-TYPE SIC SINGLE CRYSTAL - Provided is a method for producing an n-type SiC single crystal, whereby it is possible to grow an n-type SiC single crystal having a low resistivity at a high speed. A method for producing an n-type SiC single crystal by bringing a SiC seed crystal substrate into contact with a Si—C solution having such a temperature gradient that the temperature gradually decreases from the inside toward the surface, thereby achieving the crystal growth of the n-type SiC single crystal. The method involves adding a nitride to a raw material for forming the Si—C solution or to the Si—C solution. | 10-22-2015 |
| 20150299900 | METHOD FOR PRODUCING SIC SINGLE CRYSTAL - The purpose of the present invention is to produce a high-quality SiC single crystal with good reproducibility while avoiding the fluctuations in the solution-contacting position of a seed crystal among production operations. A method for producing a SiC single crystal by bringing a SiC seed crystal supported by a supporting bar into contact with a solution that has been heated by high-frequency induction to thereby grow the SiC single crystal, wherein the supporting bar is born down while applying a magnetic field to the solution to thereby bring the SiC seed crystal into contact with the solution, and subsequently the application of the magnetic field is halted to grow the SiC single crystal. | 10-22-2015 |
| 20160053402 | METHOD FOR PRODUCING SiC SINGLE CRYSTAL - The present invention provides a method for producing a SiC single crystal, which allows improving the quality of the single crystal even when crystal growth is performed by forming a meniscus. A growth step in the production method according to the present embodiment comprises a forming step and a first maintenance step. In the forming step, a meniscus is formed between a growth interface of a SiC single crystal and a liquid surface of a Si—C solution. In the first maintenance step, the fluctuation range of the height of the meniscus is maintained within a predetermined range by moving at least one of a seed shaft and a crucible relative to the other in the height direction. | 02-25-2016 |
| 20160090664 | METHOD FOR PRODUCING SIC SINGLE CRYSTAL - A method for producing a SiC single crystal by a solution process, comprising contacting a seed crystal substrate held on a seed crystal holding shaft with a Si—C solution to conduct crystal growth of a SiC single crystal, the Si—C solution being housed in a crucible and having a temperature gradient in which the temperature decreases from the interior toward the surface,
| 03-31-2016 |
| 20160122901 | METHOD FOR PRODUCING SIC SINGLE CRYSTAL - A method for producing a SiC single crystal, comprising using a Si—C solution having a temperature gradient in which the temperature decreases from the interior toward the surface to grow a SiC single crystal from a seed crystal substrate, wherein the Si—C solution includes Si and Cr, the boron density difference Bs−Bg between the boron density Bs in the seed crystal substrate and the boron density Bg in the growing single crystal is 1×10 | 05-05-2016 |
| 117063000 | Characterized by specified crystallography of the substrate | 6 |
| 20100206215 | METHOD FOR PRODUCING SINGLE-CRYSTAL THIN FILM - A method for producing a single-crystal thin film includes, for example, applying a chemical solution containing raw materials for a single-crystal thin film composed of (Ba | 08-19-2010 |
| 20130061799 | MANUFACTURING METHOD OF GROUP 13 NITRIDE CRYSTAL - A method of manufacturing a group | 03-14-2013 |
| 20130263774 | SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON - Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material | 10-10-2013 |
| 20130269596 | FEED MATERIAL FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE - Provided is a feed material for epitaxial growth of a monocrystalline silicon carbide capable of increasing the rate of epitaxial growth of silicon carbide. A feed material | 10-17-2013 |
| 20130269597 | SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE - Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material | 10-17-2013 |
| 20150376813 | METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL, METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL WAFER, HEXAGONAL SINGLE CRYSTAL WAFER, AND HEXAGONAL SINGLE CRYSTAL ELEMENT - When growing a hexagonal single crystal, an off angle is set, in a first direction [11-20] with respect to a basal plane {0001} serving as a main crystal growth plane, in a hexagonal single crystal for use as a foundation in performing crystal growth; and a cross-sectional shape which is decreased in crystal thickness in a stair-step manner from a reference line AA′ parallel to the first direction [11-20] toward second directions [−1100], [1-100] on both sides of the reference line and orthogonal to the first direction [11-20]. Dislocations threading in a c-axis direction, contained in the hexagonal single crystal, are converted into defects inclined ≧40° from the c-axis direction toward the basal plane during crystal growth, and the direction of propagation of the defects is controlled to a direction between a direction [−1-120] opposite to the first direction [11-20] and the second directions [−1100], [1-100], to discharge defects. | 12-31-2015 |
| 117064000 | Precursor composition intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux) | 13 |
| 20090013924 | PROCESS AND APPARATUS FOR PRODUCING NITRIDE SINGLE CRYSTAL - A nitride single crystal is produced using a growth solution | 01-15-2009 |
| 20090173273 | Method and Apparatus for Producing Group III Nitride Based Compound Semiconductor - In the flux method, a source nitrogen gas is sufficiently heated before feeding to an Na—Ga mixture. | 07-09-2009 |
| 20100139551 | METHOD FOR PREPARING CRYSTAL OF NITRIDE OF METAL BELONGING TO 13 GROUP OF PERIODIC TABLE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - A Periodic Table Group 13 metal nitride crystal is grown by causing a reaction of a Periodic Table Group 13 metal phase with a nitride-containing molten salt phase to proceed while removing a by-product containing a metal element except for Periodic Table Group 13 metals, from the reaction field. According to this process, a high-quality Periodic Table Group 13 metal nitride bulk crystal can be produced under low pressure or atmospheric pressure. | 06-10-2010 |
| 20100263586 | LOW TEMPERATURE CONTINUOUS CIRCULATION REACTOR FOR THE AQUEOUS SYNTHESIS OF ZnO FILMS, NANOSTRUCTURES, AND BULK SINGLE CRYSTALS - A method for synthesizing ZnO, comprising continuously circulating a growth solution that is saturated with ZnO between a warmer deposition zone, which contains a substrate or seed, and a cooler dissolution zone, which is contains ZnO source material. | 10-21-2010 |
| 20110203514 | NOVEL VESSEL DESIGNS AND RELATIVE PLACEMENTS OF THE SOURCE MATERIAL AND SEED CRYSTALS WITH RESPECT TO THE VESSEL FOR THE AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS - Reactor designs for use in ammonothermal growth of group-III nitride crystals envision a different relative placement of source materials and seed crystals with respect to each other, and with respect to the vessel containing a solvent. This placement results in a difference in fluid dynamical flow patterns within the vessel. | 08-25-2011 |
| 20130074762 | MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF A GROUP III NITRIDE CRYSTAL - A method for manufacturing a group III nitride crystal on a seed crystal in a holding vessel holding therein a melt containing a group III metal, an alkali metal and nitrogen. The manufacturing method comprises the steps of causing the seed crystal to make a contact with the melt, setting an environment of the seed crystal to a first state offset from a crystal growth condition while in a state in which said seed crystal is in contact with the melt, increasing a nitrogen concentration in the melt, and setting the environment of the seed crystal to a second state suitable for crystal growth when the nitrogen concentration of the melt has reached a concentration suitable for growing the seed crystal. | 03-28-2013 |
| 20140083352 | LOW TEMPERATURE CONTINUOUS CIRCULATION REACTOR FOR THE AQUEOUS SYNTHESIS OF ZnO FILMS, NANOSTRUCTURES, AND BULK SINGLE CRYSTALS - A method for synthesizing ZnO, comprising continuously circulating a growth solution that is saturated with ZnO between a warmer deposition zone, which contains a substrate or seed, and a cooler dissolution zone, which is contains ZnO source material. | 03-27-2014 |
| 20140305369 | Method of Producing Crystals of Nitrides of Group 13 Elements and Melt Compositions - It is provided a method of producing a crystal of a nitride of a group 13 element in a melt by flux method. The melt is generated by heating a composition including a material for the group 13 element, a material for at least one of an alkali metal and an alkaline earth metal and a liquid material for germanium. Upon producing a crystal of a nitride of a group 13 element in a melt by flux method, it is thereby possible to reduce in-plane distribution of a property such as carrier density of the thus obtained crystal of a nitride of a group 13 element. | 10-16-2014 |
| 20160168749 | Method for Producing Nitride of Group-13 Element, and Melt Composition | 06-16-2016 |
| 117065000 | Having an element in common | 4 |
| 20120042822 | METHOD FOR FABRICATING SiC SUBSTRATE - A method for fabricating a SiC substrate using metastable solvent epitaxy comprises a Si evaporation step of evaporating a Si melt at an intermediate temperature between a SiC crystal growth temperature and a Si melting point after a crystal growth step of growing an SiC crystal with a predetermined film thickness on the surface of the SiC substrate at the SiC crystal growth temperature. In the method for fabricating the SiC substrate, the ambient pressure in the crystal growth step is higher than the saturated vapor pressure of the Si melt, and the ambient pressure in the Si evaporation step is lower than the saturated vapor pressure of the Si melt. Single-crystal SiC with no large irregularities on the surface thereof can be obtained by using the method. | 02-23-2012 |
| 117066000 | Excess component or non-product appearing component contains an oxygen atom (e.g., hydrothermal) | 1 |
| 20120192787 | Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, LAMINATE THEREOF AND THEIR PRODUCTION METHODS - The present invention can provide an Mg-containing ZnO mixed single crystal wherein the mixed single crystal comprises an Mg-containing ZnO semiconductor having a bandgap (Eg) of 3.30| 08-02-2012 | |
| 117067000 | Excess component or non-product appearing component contains a metal atom | 2 |
| 20150128847 | SiC SINGLE CRYSTAL AND PRODUCTION METHOD THEREOF - An objective of the present invention is to provide a high-quality SiC single crystal in which the threading dislocation density including screw dislocation, edge dislocation and micropipe defect is reduced, and a method for producing such SiC single crystal according to a solution technique. The method for producing the SiC single crystal according to a solution technique which involves bringing an SiC seed crystal into contact with an Si—C solution having a temperature gradient in which the temperature is lower towards the surface from the inner part and growing an SiC single crystal comprises setting the temperature gradient of the surface region of the Si—C solution to 10° C./cm or below, bringing the (1-100) face of an SiC seed crystal into contact with the Si—C solution, and growing an SiC single crystal on the (1-100) face of the seed crystal at a ratio (single crystal growth rate/temperature gradient) of the growth rate of the SiC single crystal to the temperature gradient which is less than 20×10 | 05-14-2015 |
| 20160201215 | METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL | 07-14-2016 |
