| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 117037000 | Having moving solid-liquid-solid region | 24 |
| 20110107960 | Method For Producing A Single Crystal Composed Of Silicon By Remelting Granules - Silicon single crystals are grown by a method of remelting silicon granules, by crystallizing a conically extended section of the single crystal with the aid of an induction heating coil arranged below a rotating plate composed of silicon; feeding inductively melted silicon through a conical tube in the plate, the tube enclosing a central opening of the plate and extending below the plate, to a melt situated on the conically extended section of the single crystal in contact with a tube end of the conical tube, wherein by means of the induction heating coil below the plate, sufficient energy is provided to ensure that the external diameter of the tube end is not smaller than 15 mm as long as the conically extended section of the single crystal has a diameter of 15 to 30 mm. | 05-12-2011 |
| 20110185963 | Method For Producing A Single Crystal Composed Of Silicon Using Molten Granules - Silicon single crystals are prepared from molten granules, by | 08-04-2011 |
| 20120260847 | AMORPHOUS SILICON CRYSTALLIZATION USING COMBINED BEAMS FROM MULTIPLE OSCILLATORS - In a silicon crystallization method, a pulse is delivered from each of two excimer lasers. The duration of one of the pulses is extended in a pulse-duration extender to a duration significantly longer than that of that of the other. The extended-duration and other pulses are delivered along a common path. The other pulse temporally overlaps the extended-duration pulse after delivery of the extended-duration pulse begins. The silicon is preheated by the extended-duration before being melted by the combined pulses during the temporal overlap period. | 10-18-2012 |
| 20150047554 | METHOD FOR EVALUATING DEGREE OF CRYSTAL ORIENTATION IN POLYCRYSTALLINE SILICON, SELECTION METHOD FOR POLYCRYSTALLINE SILICON RODS, AND PRODUCTION METHOD FOR SINGLE-CRYSTAL SILICON - When a plate-like sample | 02-19-2015 |
| 20150354087 | APPARATUS AND PROCESS FOR PRODUCING A CRYSTAL OF SEMICONDUCTOR MATERIAL - A crystal of semiconductor material is produced in an apparatus having a crucible with a crucible bottom and a crucible wall, the crucible bottom having a top surface, an underside, and a multitude of openings disposed between the crucible wall and a center of the crucible bottom, and elevations disposed on the top surface and the underside of the crucible bottom; and an induction heating coil disposed below the crucible for melting semiconductor material and stabilizing a melt of semiconductor material covering a growing crystal of semiconductor material. The growth process comprises generating a bed of a semiconductor material feed on the top surface of the crucible bottom and melting semiconductor material on the bed using the induction heating coil. | 12-10-2015 |
| 20160060786 | Method Of Supporting A Growing Single Crystal During Crystallization Of The Single Crystal According To The FZ Method - A growing single crystal is supported in the region of a conical section of the single crystal via a supporting body during crystallization of the single crystal by the FZ method. The method comprises pressing the supporting body against the conical section of the growing single crystal at a temperature at which a first material of the supporting body becomes soft, and continuing pressing the supporting body against the conical section of the growing single crystal until the first material and a second material of the supporting body that remains hard at the cited temperature touch the conical section of the growing single crystal. | 03-03-2016 |
| 117038000 | Including a step of measuring, testing, or sensing | 4 |
| 20120111263 | METHOD FOR THE DETERMINATION OF IMPURITIES IN SILICON - The invention relates to a method for the determination of impurities in silicon, in which a monocrystalline rod is produced by means of zone refining from a silicon to be tested; this monocrystalline rod is introduced, in at least one dilution step, into a casing made of mono- or polycrystalline silicon having defined carbon and dopant concentrations and a diluted monocrystalline rod of silicon is produced from the rod and casing by means of zone refining; wherein the determination of impurities in the silicon to be tested is carried out with the aid of a diluted monocrystalline rod by means of photoluminescence or FTIR or both. | 05-10-2012 |
| 117039000 | With responsive control | 3 |
| 20120240843 | On Demand Thin Silicon - A method and system is disclosed for making ultra thin wafer(s) or thin film(s) of c-Si on demand. One aspect of certain embodiments includes using a planar seed or crystal template in combination with shaped scanning heat sources to produce an intermediate seed or secondary crystal template, and finally producing an ultra thin wafer or thin film with a single crystal structure over an arbitrary area and film thickness starting from an initial low quality Si coating. | 09-27-2012 |
| 20140305368 | MANUFACTURING A COMPONENT OF SINGLE CRYSTAL OR DIRECTIONALLY SOLIDIFIED MATERIAL - A method for manufacturing a component of a single crystal or a directionally solidified material is provided that includes: superimposing a powder layer of a first material onto a surface of a substrate out of a second, single crystal or directionally solidified, material; transforming the powder layer into a substrate layer by altering a physical condition of the first material of the powder by applying energy to the powder layer; wherein the second material of the substrate has a grain orientation and the material of the substrate layer has a grain orientation; wherein the material of the substrate layer adopts the same grain orientation as the grain orientation of the substrate during the transforming process and wherein the steps are repeated till the component has grown layer by layer into the predefined shape while a process temperature is maintained below a melting temperature of at least the first material. | 10-16-2014 |
| 20160053401 | AUXILIARY HEATING DEVICE FOR ZONE MELTING FURNACE AND HEAT PRESERVATION METHOD FOR SINGLE CRYSTAL ROD THEREOF - The present invention aims at providing an auxiliary heating device for a zone melting furnace and a heat preservation method for a single crystal rod thereof. The auxiliary heating device comprises an auxiliary heater disposed below a high-frequency heating coil inside the zone melting furnace and is formed by winding a hollow metal circular pipe. The winding start end of the auxiliary heater is positioned on the upper part, the winding stop end of the auxiliary heating device is positioned on the lower part, and an upper end part and a lower end part are respectively guided out from the both ends; and a hollow cylindrical heating load is disposed on the inner side of the auxiliary heater, and an insulation part is disposed between the heating load and the auxiliary heater. The present invention can solve the problem of single crystal rod cracking caused by unreasonable distribution of the thermal field and overlarge thermal stress in the growth process of zone-melted silicon single crystals over 6.5 inches. | 02-25-2016 |
| 117041000 | Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, travelling solvent, flux) | 1 |
| 20140299047 | METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays | 10-09-2014 |
| 117043000 | Distinctly layered product (e.g., twin, SOI, epitaxial crystallization) | 3 |
| 20140331915 | METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays | 11-13-2014 |
| 117044000 | Adjacent single-crystal product regions separately formed (e.g., multiple non-coextensive passes of a scanning laser) | 2 |
| 20140150712 | CRYSTALLIZATION PROCESSING FOR SEMICONDUCTOR APPLICATIONS - A method and apparatus for forming a crystalline semiconductor layer on a substrate are provided. A semiconductor layer is formed by vapor deposition. A pulsed laser melt/recrystallization process is performed to convert the semiconductor layer to a crystalline layer. Laser, or other electromagnetic radiation, pulses are formed into a pulse train and uniformly distributed over a treatment zone, and successive neighboring treatment zones are exposed to the pulse train to progressively convert the deposited material to crystalline material. | 06-05-2014 |
| 20150013588 | CRYSTALLIZATION PROCESSING FOR SEMICONDUCTOR APPLICATIONS - A method and apparatus for forming a crystalline semiconductor layer on a substrate are provided. A semiconductor layer is formed by vapor deposition. A pulsed laser melt/recrystallization process is performed to convert the semiconductor layer to a crystalline layer. Laser, or other electromagnetic radiation, pulses are formed into a pulse train and uniformly distributed over a treatment zone, and successive neighboring treatment zones are exposed to the pulse train to progressively convert the deposited material to crystalline material. | 01-15-2015 |
| 117046000 | Movement includes a horizontal component | 1 |
| 20140083351 | PROCESS FOR THE GROWTH OF A CRYSTALLINE SOLID, ASSOCIATED CRYSTALLINE SOLID AND DEVICE - The present invention relates to a process for the growth of a crystalline solid by inching then cooling a crystallization material ( | 03-27-2014 |
| 117047000 | Flat, free-standing (i.e., substrate-free) product (e.g., ribbon, film, sheet) | 1 |
| 20130213296 | METHOD FOR ACHIEVING SUSTAINED ANISOTROPIC CRYSTAL GROWTH ON THE SURFACE OF A MELT - A method of horizontal ribbon growth from a melt includes forming a leading edge of the ribbon using radiative cooling on a surface of the melt, drawing the ribbon in a first direction along the surface of the melt, and removing heat radiated from the melt in a region adjacent the leading edge of the ribbon at a heat removal rate that is greater than a heat flow through the melt into the ribbon. | 08-22-2013 |
| 117049000 | Liquid zone contacts only precursor and product solids (e.g., crucibleless, liquid encapsulant, float zone) | 8 |
| 20130186325 | PROCESS FOR DETERMINING SURFACE CONTAMINATION OF POLYCRYSTALLINE SILICON - The invention provides a process for determining surface contamination of polycrystalline silicon, including the steps of: a) providing two polycrystalline silicon rods by deposition in a Siemens reactor; b) determining contaminants in the first of the two rods immediately after the deposition; c) conducting the second rod through one or more systems in which polycrystalline silicon rods are processed further to give rod pieces or polysilicon fragments, optionally cleaned, stored or packed; d) then determining contaminants in the second rod; wherein the difference in the contaminants determined in the first and second rods gives surface contamination of polycrystalline silicon resulting from systems and the system environment. | 07-25-2013 |
| 117050000 | Liquefying by energy from an electromagnetic wave or electromagnetic particle or arc or plasma (e.g., radiant heat) | 7 |
| 20120298031 | DEVICE FOR SINGLE-CRYSTAL GROWTH AND METHOD OF SINGLE-CRYSTAL GROWTH - [Technical Problem] | 11-29-2012 |
| 20160040316 | MANUFACTURING METHOD OF DOUBLE CLADDING CRYSTAL FIBER - The present invention relates to a manufacturing method of a double cladding crystal fiber, in which growing an YAG or a sapphire into a single crystal fiber by LHPG method, placing the single crystal fiber into a glass capillary for inner cladding, placing the single crystal fiber together with the glass capillary for inner cladding into a glass capillary for outer cladding in unison, heating the glass capillary for inner cladding and outer cladding by the LHPG method to attach to the outside of the single crystal fiber, and thus growing into a double cladding crystal fiber. When the present invention is applied to high power laser, by using the cladding pumping scheme, the high power pumping laser is coupled to the inner cladding layer, so the problems of heat dissipation and the efficiency impairment due to energy transfer up-conversion of high power laser are mitigated. | 02-11-2016 |
| 117051000 | Electromagnetic induction | 5 |
| 20130160698 | Method and Apparatus For Producing A Single Crystal - Single crystals are produced by means of the floating zone method, wherein the single crystal crystallizes below a melt zone at a crystallization boundary, and the emission of crystallization heat is impeded by a reflector surrounding the single crystal, wherein the single crystal is heated in the region of an outer edge of the crystallization boundary by means of a heating device in a first zone, wherein a distance Δ between an outer triple point T | 06-27-2013 |
| 20140060421 | METHOD FOR PRODUCING A SILICON SINGLE CRYSTAL - A silicon single crystal is produced by a method wherein
| 03-06-2014 |
| 20150101526 | METHOD FOR TAILORING THE DOPANT PROFILE IN A LASER CRYSTAL USING ZONE PROCESSING - A lasing medium having a tailored dopant concentration and a method of fabrication thereof is disclosed. The lasing medium has a single crystal having a continuous body having a selected length, wherein the crystal comprises dopant distributed along the length of the body to define a dopant concentration profile. In one embodiment, the dopant concentration profile results in a uniform heating profile. A method of fabricating a laser crystal having a tailored dopant concentration profile includes arranging a plurality of polycrystalline segments together to form an ingot, the polycrystalline segments each having dopant distributed, providing a crystal seed at a first end of the ingot, and moving a heating element along the ingot starting from the first end to a second end of the ingot, the moving heating element creating a moving molten region within the ingot while passing therealong. | 04-16-2015 |
| 20160177469 | Method For Growing A Single Crystal By Crystallizing The Single Crystal From A Float Zone | 06-23-2016 |
| 117052000 | With liquid control (e.g., vibration damping, stabilizing, melt levitation focusing coil) | 1 |
| 20100107968 | METHOD AND APPARATUS FOR PRODUCING A SINGLE CRYSTAL - A method is disclosed for producing a single crystal comprising passing a polycrystalline rod through a heating region to create a molten zone, applying a magnetic field to the molten zone, and inducing growth of a single crystal upon solidification of the molten material on a single crystal seed. The growing single crystal is rotated in a pattern alternating between clockwise and counter-clockwise rotational directions. The method is useful for producing silicon single crystals having uniform electrical characteristics. Also disclosed is an apparatus for performing said method. | 05-06-2010 |
