Class / Patent application number | Description | Number of patent applications / Date published |
117028000 | Including non-coincident axes of rotation (e.g., relative eccentric) | 8 |
20100089308 | SILICA GLASS CRUCIBLE AND METHOD FOR PULLING SINGLE-CRYSTAL SILICON - A silica glass crucible used for pulling single-crystal silicon, which includes a cylindrical straight body part, a bottom part and a curved part located between the straight body part and the bottom part, wherein the curvature radius of the inner wall surface of the curved part is 100 to 240 mm. Variation of the wall thickness W of the curved part is preferably 0.1 to 1.4 mm/cm. | 04-15-2010 |
20100126407 | SILICA GLASS CRUCIBLE AND METHOD FOR PULLING SINGLE-CRYSTAL SILICON - A silica glass crucible used for pulling single-crystal silicon, which includes a cylindrical straight body part, a bottom part and a curved part located between the straight body part and the bottom part, wherein the curvature radius of the inner wall surface of the curved part is 100 to 240 mm. Variation of the wall thickness W of the curved part is preferably 0.1 to 1.4 mm/cm. | 05-27-2010 |
20100319613 | SILICON MONOCRYSTAL GROWTH METHOD - Silicon monocrystal growth is ended before a liquid surface of a melt reaches a corner portion of a quartz crucible, and thus dislocation of a silicon monocrystal can be reduced and reduction in yield can be prevented. | 12-23-2010 |
20110247547 | PROCESS FOR PRODUCING SINGLE-CRYSTAL SAPPHIRE - Following steps are implemented: a melting step in which aluminum oxide within a crucible placed in a chamber is melted to obtain an aluminum melt; a shoulder-portion formation step in which a seed crystal brought into contact with the aluminum melt is pulled up to thereby form a shoulder portion below the seed crystal; and a body-portion formation step in which a mixed gas including oxygen and an inert gas and having an oxygen concentration set at not less than 0.6 vol % nor more than 3.0 vol % is supplied to the inside of the chamber while single-crystal sapphire is pulled up from the melt, thereby forming a body portion. Thus, when single-crystal sapphire is obtained by crystal growth from a melt of aluminum oxide, air bubbles are more effectively inhibited from coming into the single-crystal sapphire. | 10-13-2011 |
20110290173 | Methods and Systems for Characterization and Production of High Purity Polysilicon - Computer controlled quality control methods for manufacturing high purity polycrystalline granules are introduced. Polycrystalline silicon granules are sampled and converted into single crystal specimen in computer controlled system, eliminating the need of human operator in controlling the processing parameters. Single crystal silicon test samples, then characterized by FTIR and other standard analysis, are therefore more representative of the starting granular silicon. | 12-01-2011 |
20110315073 | METHOD OF PRODUCING SIC SINGLE CRYSTAL - In a method of producing an SiC single crystal, the SiC single crystal is grown on an SiC seed crystal by bringing the SiC seed crystal, which is fixed at a rotatable seed crystal fixing shaft, into contact with a solution produced by dissolving carbon in melt containing silicon in a rotatable crucible. The method includes starting rotation of the seed crystal fixing shaft, and starting rotation of the crucible after a predetermined delay time (Td); then stopping the rotation of the seed crystal fixing shaft and the rotation of the crucible simultaneously; then stopping the seed crystal fixing shaft and the crucible for a predetermined stop time (Ts); and repeating a rotation/stop cycle. | 12-29-2011 |
20130276693 | SINGLE CRYSTAL PRODUCTION APPARATUS AND SINGLE CRYSTAL PRODUCTION METHOD - A single crystal production apparatus using the Czochralski method, includes: a crucible for holding raw material melt; a pedestal that supports the crucible and can be moved upward and downward; a crucible rotating shaft for rotating the crucible via the pedestal; and a melt receiver that is disposed below the crucible and provided with a center sleeve surrounding the pedestal, wherein, on the outer periphery of the pedestal, two or more grooves for preventing the raw material melt leaking from the crucible from dripping are provided. The single crystal production apparatus and single crystal production method can reliably prevent melt from reaching a metal portion below the pedestal even when the raw material melt in the crucible flows to the outside of the crucible in an unexpected accident or the like and runs down along the pedestal and thereby prevent damage to the apparatus and the occurrence of an accident. | 10-24-2013 |
20130284083 | MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL AND METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL - A manufacturing apparatus for SiC single crystal has a control unit to control induction heating such that frequency f (Hz) of alternating current to be passed to the induction heating unit satisfies Formula (1); D1 (mm) is permeation depth of electromagnetic waves into a side wall of a crucible by the heating unit, D2 (mm) is permeation depth of electromagnetic waves into a SiC solution, T (mm) is thickness of the crucible side wall of the crucible, and R (mm) is crucible inner radius: | 10-31-2013 |