| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 117019000 | Forming an intended mixture (excluding mixed crystal) (e.g., doped) | 33 |
| 20080245291 | Method for producing silicon single crystal - A method of growing silicon single crystals with a [110] crystallographic axis orientation by the Czochralski method is provided according to which a silicon seed crystal doped with a high concentration of boron is used and an included angle of a conical part during shoulder section formation is maintained within a specified range. It is thereby possible to grow large-diameter and heavy-weight dislocation-free silicon single crystals with a diameter of 300 mm or more in a stable manner, without the fear of dropping the single crystal during pulling up. Therefore, the method can be properly utilized in producing silicon single crystals as semiconductor materials. | 10-09-2008 |
| 20090000538 | SINGLE CRYSTAL GROWING METHOD - In a method of growing a single crystal by melting a raw material within a vessel under a nitrogenous and non-oxidizing atmosphere, the vessel is oscillated and the melted raw material is contacted with an agitation medium made of a solid unreactive with the melted raw material. | 01-01-2009 |
| 20090120353 | REDUCTION OF AIR POCKETS IN SILICON CRYSTALS BY AVOIDING THE INTRODUCTION OF NEARLY-INSOLUBLE GASES INTO THE MELT - A process is provided for controlling the amount of insoluble gas carried by a charge of granular polycrystalline silicon. The process comprises (i) charging a feeding container with granular polycrystalline silicon, (ii) forming an ambient atmosphere in the feeding container, the ambient atmosphere having a mole fraction of at least 0.9 of a gas having a solubility in molten silicon of at least about 5—10 | 05-14-2009 |
| 20100050931 | METHOD FOR MANUFACTURING SINGLE CRYSTAL - Using a pulling-up apparatus, an oxygen concentration of the monocrystal at a predetermined position in a pulling-up direction is controlled based on a relationship in which the oxygen concentration of the monocrystal is decreased as a flow rate of the inactive gas at a position directly above a free surface of the dopant-added melt is increased when the monocrystal is manufactured with a gas flow volume in the chamber being in the range of 40 L/min to 400 L/min and an inner pressure in the chamber being in the range of 5332 Pa to 79980 Pa. Based on the relationship, oxygen concentration is elevated to manufacture the monocrystal having a desirable oxygen concentration. Because the oxygen concentration is controlled under a condition corresponding to a condition where the gas flow rate is rather slow, the difference between a desirable oxygen concentration profile of the monocrystal and an actual oxygen concentration profile is reduced. | 03-04-2010 |
| 20100175612 | MANUFACTURING METHOD FOR SILICON SINGLE CRYSTAL - To provide a manufacturing method for a silicon single crystal that can reduce introduction of dislocation thereinto even if a required amount of dopant is added to a melt while growing a straight body portion of a silicon ingot. In a manufacturing method for a silicon single crystal according to the present invention that includes a dopant addition step of adding a dopant to a melt while a straight body portion of a silicon single crystal is growing in a growth step of growing the silicon single crystal by dipping a seed crystal into a silicon melt and then pulling the seed crystal therefrom, in the dopant addition step, a remaining mass of the melt is calculated at the beginning thereof, and the dopant is added to the melt at a rate of 0.01 to 0.035 g/min·kg per minute per 1 kg of the calculated remaining mass of the melt. | 07-15-2010 |
| 20100212580 | METHOD OF MANUFACTURING MONOCRYSTAL, FLOW STRAIGHTENING CYLINDER, AND MONOCRYSTAL PULLING-UP DEVICE - For manufacturing a monocrystal, a monocrystal pulling-up device controls pressure within a flow straightening cylinder to be from 33331 Pa to 79993 Pa and a flow velocity of inert gas in the cylinder to be from 0.06 m/sec to 0.31 m/sec (0.005 to 0.056 SL/min·cm | 08-26-2010 |
| 20100242832 | SEED CRYSTAL FOR PULLING SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL BY USING THE SEED CRYSTAL - Provided is a seed crystal for pulling a silicon single crystal that can reduce generation of slip dislocation due to thermal shock that occurs at the time of contact with a silicon melt, suppress propagation of this slip dislocation, and eliminate dislocation even though a diameter of a neck portion is larger than that in conventional examples. The seed crystal for pulling a silicon single crystal according to the present invention is an improvement in a seed crystal used for pulling a silicon single crystal based on a CZ method, and its characteristics configuration lies in that the seed crystal is cut out from a silicon single crystal pulled from a carbon-doped silicon melt and a concentration of carbon with which the seed crystal is doped is in the range of 5×10 | 09-30-2010 |
| 20110114011 | METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL - The present invention provides a method of producing low-resistivity silicon single crystal containing a dopant at a relatively high concentration by adding a large amount of the dopant to silicon melt when the silicon single crystal is pulled up, with suppressing occurrence of dislocation in the crystal. Specifically, the present invention provides a method of manufacturing silicon single crystal by bringing silicon seed crystal into contact with silicon melt and pulling up the silicon seed crystal while rotating the crystal to grow silicon single crystal whose straight body section has a diameter of φ mm below the silicon seed crystal, the method comprising: the dopant-adding step of adding a dopant to the silicon melt during growth of the straight body section of the silicon single crystal, while rotating the silicon single crystal at a rotational speed of ω rpm (where ω≧24−(φ/25)). | 05-19-2011 |
| 20110315072 | VITREOUS SILICA CRUCIBLE AND METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SILICON INGOT - Provided is a vitreous silica crucible which can suppress inward sagging and buckling of the sidewall effectively even when time for pulling silicon ingots is extremely long. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, wherein the crucible has a wall comprising, from an inner surface toward an outer surface of the crucible, a transparent vitreous silica layer having a bubble content rate of less than 0.5%, a bubble-containing vitreous silica layer having a bubble content rate of 1% or more and less than 50%, a semi-transparent vitreous silica layer having a bubble content rate of 0.5% or more and less than 1.0% and having an OH group concentration of 35 ppm or more and less than 300 ppm. | 12-29-2011 |
| 20120260846 | METHOD FOR FORMING BULK CRYSTALS, IN PARTICULAR MONOCRYSTALS OF FLUORIDES DOPED WITH RARE-EARTH IONS - A method for forming a bulk crystal from precursors in the molten state, of solidification and growth around a seed of a material having a defined crystalline structure, includes subjecting the crystalline solid phase obtained at the end of the growth to a first controlled cooling step performed at a first higher cooling rate until a predetermined threshold temperature is reached, and to a subsequent controlled cooling step from the threshold temperature, performed at a second cooling rate lower than the first cooling rate. | 10-18-2012 |
| 20130220212 | METHOD FOR MANUFACTURING N-TYPE SiC SINGLE CRYSTAL - A method for manufacturing an n-type SiC single crystal, enables the suppression of the variation in nitrogen concentration among a plurality of n-type SiC single crystal ingots manufactured. A method includes the steps of: providing a manufacturing apparatus ( | 08-29-2013 |
| 20140033968 | Controlled Doping Device For Single Crystal Semiconductor Material and Related Methods - A doping device for a furnace containing a melt includes an upper chamber configured to hold solid dopant particles, a lower chamber, and a feeding tube coupled between the upper chamber and the lower chamber. The feeding tube is configured to supply dopant gas from the upper chamber to the lower chamber, and the lower chamber is configured to diffuse dopant gas over a top surface of the melt. | 02-06-2014 |
| 20140069324 | CRUCIBLE AND METHOD FOR PRODUCING A SILICON BLOCK - A crucible for producing a silicon block comprises a crucible wall surrounding an interior and an opening for filling silicon melt into the interior, wherein the crucible wall comprises at least one doping means for providing dopant for the silicon melt. | 03-13-2014 |
| 20140083350 | METHOD OF PRODUCING GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL - Provided is a method of producing a group III-V compound, comprising: producing a raw material by housing a group III-V compound semiconductor crystal containing group III element and group V element and an impurity in a crucible, and heating and melting the group III-V compound semiconductor crystal in a state that a surface of the group III-V compound semiconductor crystal to an atmosphere in the crucible; growing the group III-V compound semiconductor single crystal by heating the raw material and an encapsulant by adding the encapsulant into the crucible in which the raw material is housed, and making a seed crystal in contact with a melt of the raw material with a liquid surface covered by the encapsulant in a liquid state, and lifting the seed crystal. | 03-27-2014 |
| 20140190397 | INGOT GROWING APPARATUS AND METHOD OF MANUFACTURING INGOT - Provided is an ingot growing apparatus, which includes a crucible containing a silicon melt, a pulling device pulling a silicon single crystal ingot grown from the silicon melt, and a dopant supply unit disposed adjacent to the pulling device and for supplying a dopant during growing of the ingot. The neck portion may be doped at a concentration higher than that of the ingot through the dopant supply unit. Therefore, dislocation propagation velocity may be decreased and a propagation length may be shortened. | 07-10-2014 |
| 20140331914 | APPARATUS FOR GROWING INGOT AND METHOD OF GROWING INGOT - Provided is an ingot growing apparatus, which includes a crucible containing a silicon melt, a pulling device pulling a silicon single crystal ingot grown from the silicon melt, and a dopant supply unit disposed adjacent to the pulling device and for supplying a dopant during growing of the ingot. The neck portion may be doped at a concentration higher than that of the ingot through the dopant supply unit. Therefore, dislocation propagation velocity may be decreased and a propagation length may be shortened. | 11-13-2014 |
| 20150040818 | METHOD FOR ACHIEVING SUSTAINED ANISOTROPIC CRYSTAL GROWTH ON THE SURFACE OF A MELT - A method of horizontal ribbon growth from a melt of material includes forming a leading edge of the ribbon using radiative cooling, drawing the ribbon in a first direction along a surface of the melt, removing heat radiated from the melt in a region adjacent the leading edge of the ribbon by setting a temperature T | 02-12-2015 |
| 20150107509 | SILICON SINGLE CRYSTAL PULLING APPARATUS AND MANUFACTURING METHOD OF SILICON SINGLE CRYSTAL - Disclosed is a silicon single crystal pull-up apparatus that can grow a silicon single crystal having a desired electrical resistivity, to which a sublimable dopant has been reliably added, regardless of the length of the time necessary for the formation of a first half part of a straight body part in a silicon single crystal. Also disclosed is a process for producing a silicon single crystal. The silicon single crystal pull-up apparatus pulls up a silicon single crystal from a melt by a Czochralski method. The silicon single crystal pull-up apparatus comprises a pull-up furnace, a sample chamber that is externally mounted on the pull-up furnace and houses a sublimable dopant, a shielding mechanism that thermally shields the pull-up furnace and the sample chamber, and supply means that, after the release of shielding of the shielding mechanism, supplies the sublimable dopant into the melt. | 04-23-2015 |
| 20160002819 | METHOD FOR PREPARING SOLAR GRADE SILICON SINGLE CRYSTAL USING CZOCHRALSKI ZONE MELTING METHOD - The present invention discloses a method of preparing solar-grade silicon single crystals by using the Czochralski and float-zone process: in the equal-diameter growth process during the float-zone phase, under the control by the electric control system of a float-zone single crystal furnace, a downward-rotating motor alternates forward rotations and reverse rotations; said downward-rotating motor drives silicon single crystals to rotate by the preset forward angle or reverse angle. The present invention improves the radial resistivity variation of solar-grade silicon single crystals and solves the black heart problem with solar-grade silicon single crystals. Thus, the conversion efficiency of the solar cells manufactured using such solar-grade silicon single crystals can be increased. | 01-07-2016 |
| 20160017513 | GAS DOPING SYSTEMS FOR CONTROLLED DOPING OF A MELT OF SEMICONDUCTOR OR SOLAR-GRADE MATERIAL - A crystal pulling apparatus for producing an ingot is provided. The apparatus includes a furnace and a gas doping system. The furnace includes a crucible for holding a melt. The gas doping system includes a feeding tube, an evaporation receptacle, and a fluid flow restrictor. The feeding tube is positioned within the furnace, and includes at least one feeding tube sidewall, a first end through which a solid dopant is introduced into the feeding tube, and an opening opposite the first end through which a gaseous dopant is introduced into the furnace. The evaporation receptacle is configured to vaporize the dopant therein, and is disposed near the opening of the feeding tube. The fluid flow restrictor is configured to permit the passage of solid dopant therethrough and restrict the flow of gaseous dopant therethrough, and is disposed within the feeding tube between the first end and the evaporation receptacle. | 01-21-2016 |
| 20160060787 | INGOT RAW MATERIAL SUPPLY SYSTEM - A raw material supply system for supplying a fixed amount of raw material necessary for ingot (single crystal silicon) growth is disclosed. The raw material supply system includes a support unit ( | 03-03-2016 |
| 117020000 | Comprising a silicon crystal with oxygen containing impurity | 2 |
| 20080236476 | Silicon single crystal wafer for particle monitor - A silicon single crystal wafer for a particle monitor is presented, which wafer has an extremely small amount in the surface density of light point defects and is capable of still maintaining a small surface density even after repeating the SC-1. The wafer is prepared by slicing a silicon single crystal ingot including an area in which crystal originated particles are generated, and the surface density of particles having a size of not less than 0.12 mum is not more than 15 counts/cm | 10-02-2008 |
| 20160068992 | METHOD OF PRODUCING SILICON SINGLE CRYSTAL - A method of producing a phosphorus-doped silicon single crystal, including pulling the phosphorus-doped silicon single crystal from a silicon melt doped with phosphorus by Magnetic field applied Czochralski (MCZ) method, wherein the phosphorus is doped such that a phosphorus concentration of the phosphorus-doped silicon single crystal is 2×10 | 03-10-2016 |
| 117021000 | Comprising a semiconductor with a charge carrier impurity | 10 |
| 20090235861 | CARBON-DOPED SINGLE CRYSTAL MANUFACTURING METHOD - A method of manufacturing a silicon single crystal with carbon doping in a chamber by using a Czochralski method is provided. In a step of placing a silicon raw material in a crucible, a carbon dopant is disposed at a distance of 5 cm or further away from the inner surface of the crucible, and in this state, a step of melting the silicon raw material is performed after the disposing step. | 09-24-2009 |
| 20100031871 | DOPING APPARATUS AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL - A doping device includes a first dopant accommodating portion including an opening on an upper portion to accommodate a first dopant that is evaporated near a surface of a semiconductor melt; a second dopant accommodating portion including a dopant holder that holds a second dopant that is liquefied near the surface of the semiconductor melt while including a communicating hole for delivering the liquefied dopant downwardly, and a conduit tube provided on a lower portion of the dopant holder for delivering the liquefied dopant flowed from the communicating hole to the surface of the semiconductor melt; and a guide provided by a cylinder body of which a lower end is opened and an upper end is closed for guiding dopant gas generated by evaporation of the first dopant to the surface of the semiconductor melt. | 02-11-2010 |
| 20100071612 | METHOD FOR MANUFACTURING SINGLE CRYSTAL - In consideration of influence of segregation, an evaporation area of a volatile dopant and influence of a pulling-up speed at the time of manufacturing a monocrystal by use of a monocrystal pulling-up device, an evaporation speed formula for calculating an evaporation speed of the dopant is derived. At a predetermined timing during pulling-up, gas flow volume and inner pressure in a chamber are controlled such that a cumulative evaporation amount of the dopant, calculated based on the evaporation speed formula, becomes a predetermined amount. A difference between a resistivity profile of the monocrystal predicted based on the evaporation speed formula and an actual resistivity profile is made small. Since no volatile dopant is subsequently added, increase in workload on an operator, increase of manufacturing time, an increase in amorphous adhering to the inside of the chamber, and an increase in workload at the time of cleaning the inside of the chamber can be prevented. | 03-25-2010 |
| 20100116195 | METHOD FOR GROWING SILICON SINGLE CRYSTAL - The present invention provides a method for growing a carbon-doped silicon single crystal that grows a silicon single crystal from a raw material melt in a crucible having carbon added therein by the Czochralski method, wherein an extruded material or a molded material is used as a dopant for adding the carbon to a raw material in the crucible. As a result, there can be provided the method for growing a carbon-doped silicon single crystal, by which the carbon can be easily doped in the silicon single crystal at low cost and a carbon concentration in the silicon single crystal can be accurately controlled in a silicon single crystal pulling up process by the Czochralski method. | 05-13-2010 |
| 20110126758 | GERMANIUM ENRICHED SILICON MATERIAL FOR MAKING SOLAR CELLS - Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. A common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, including increased material strength and improved electrical properties. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells. | 06-02-2011 |
| 20120279437 | GROWTH OF A UNIFORMLY DOPED SILICON INGOT BY DOPING ONLY THE INITIAL CHARGE - The present invention relates to a method of growing a silicon ingot comprising a dopant material having a segregation coefficient of k, wherein the concentration of the dopant is axially substantially uniform throughout the ingot. The method comprises the steps of providing a crucible having an inner growth zone in fluid communication with an outer feed zone, and the inner growth zone and the outer feed zone have cross-sectional areas that are can be used to determine conditions for maintaining dopant uniformity for the specific dopant material used. A crystalline growth system for growing at least one uniformly doped silicon ingot is also disclosed. | 11-08-2012 |
| 20140020617 | PROCESS FOR PRODUCTION OF SILICON SINGLE CRYSTAL, AND HIGHLY DOPED N-TYPE SEMICONDUCTOR SUBSTRATE - After adding phosphorus (P) and germanium (Ge) into a silicon melt or adding phosphorus into a silicon/germanium melt, a silicon monocrystal is grown from the silicon melt by a Czochralski method, where a phosphorus concentration [P] | 01-23-2014 |
| 20140109824 | METHOD OF GROWING SILICON SINGLE CRYSTAL - Disclosed is a method of growing a silicon single crystal. The method includes preparing a silicon melt, adding a dopant having a lower melting point than the silicon melt to the silicon melt, and growing a silicon single crystal from the silicon melt to which the dopant is added in the order of a neck, a shoulder, and a body. During the silicon single crystal growth, the length of a neck is adjusted in the range of 35 to 45 cm, and a ratio of inert gas quantity to pressure of a chamber is adjusted to 1.5 or less. | 04-24-2014 |
| 20150020729 | GERMANIUM ENRICHED SILICON MATERIAL FOR MAKING SOLAR CELLS - Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. A common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, including increased material strength and improved electrical properties. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells. | 01-22-2015 |
| 20160032485 | METHOD FOR GROWING BETA-GA2O3-BASED SINGLE CRYSTAL - Provided is a method for growing a β-Ga | 02-04-2016 |
