| Entries |
| Document | Title | Date |
|---|
| 20090031817 | Semiconductor Pressure Sensor and Fabrication Method Thereof - A semiconductor pressure sensor is provided that includes a diaphragm, a resistive element arranged at an upper portion of the diaphragm, an insulating film arranged on an upper face of the resistive element and an upper face of the diaphragm, a via that penetrates through a portion of the insulating film and comes into contact with the resistive element, and wiring that is electrically connected to the resistive element through the via. The insulating film includes a concave portion having a bottom face that is substantially flat. The wiring is arranged on the bottom face of the concave portion, and the depth of the concave portion is substantially equal to the thickness of the wiring. | 02-05-2009 |
| 20090056463 | Semiconductor Pressure Sensor and Method for Manufacturing Semiconductor Pressure Sensor - A semiconductor pressure sensor includes a diaphragm; a resistor provided on a top surface of the diaphragm; an insulating film formed on the diaphragm and the resistor having a penetrating part exposing a top surface of the resistor; and a wiring pattern formed from the top surface of the resistor exposed by the penetrating part to a top surface of the insulating film; wherein a distance between a first crossing part where a plane orthogonal to the top surface of the diaphragm meets a top end of a side plane of the penetrating part and a second crossing part where the plane orthogonal to the top surface of the diaphragm meets a bottom of the side plane of the penetrating part is equal or greater than a thickness of the insulating film by a factor of a square root of two. | 03-05-2009 |
| 20090071259 | Pressure Sensor and Manufacturing Method Thereof - A pressure sensor for a pressure medium includes: a sensor chip ( | 03-19-2009 |
| 20100218614 | Measurement Element - An object of the present invention is to provide a structure unlikely to break in the dicing process while allowing easy execution of screening, for a measurement element in which a resistor constituting a heater is formed on a thin wall part thermally insulated from a semiconductor substrate by providing a cavity part formed in the semiconductor substrate. | 09-02-2010 |
| 20130205908 | MEMS PRESSURE SENSOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention discloses a Micro-Electro-Mechanical System (MEMS) pressure sensor device and a manufacturing method thereof. The MEMS pressure sensor device includes: a substrate having at least one recess formed on an upper surface thereof, the recess defining a boss; a membrane, which is bonded to at least a part of the upper surface and at least a part of the boss, so that the at least one recess forms a cavity; at least one sensing unit, which is coupled to the membrane, for sensing deflection of the membrane; and an opening, which is formed on a lower surface of the substrate, and connects to the cavity. | 08-15-2013 |
| 20140069200 | PRESSURE SENSOR DEVICE - A pressure sensor device comprises a support substrate including a thin film area which is bendable by a pressure, a sensor film comprising a first electrode provided on the thin film area, a second electrode provided on the first electrode, a reference layer provided between the first electrode and the second electrode, a free layer provided between the reference layer and the first electrode or between the reference layer and the second electrode, a spacer layer provided between the reference layer and the free layer, a shield provided on a side of the support substrate. | 03-13-2014 |
| 20140260648 | PRESSURE SENSOR - The invention prevents a pressure receiving space of a pressure sensor from being electrically charged. In a pressure sensor, a diaphragm is attached to a base which is fixed within a cover and a pressure receiving space in which an oil is sealed is formed. A semiconductor type pressure detecting device is connected to a plurality of terminal pins by a bonding wire. A neutralization plate attached to a periphery of the semiconductor type pressure detecting device or a part of the periphery thereof is connected to an earth terminal pin by an earth bonding wire, or is connected to the earth terminal pin by a soldering so as to prevent an insulative medium sealed within the pressure receiving space from being electrically charged. | 09-18-2014 |
| 20140311249 | Semiconductor Pressure Sensor, Pressure Sensor Apparatus, Electronic Equipment, and Method of Manufacturing Semiconductor Pressure Sensor - A semiconductor pressure sensor ( | 10-23-2014 |
| 20150059485 | MICROMECHANICAL SENSOR SYSTEM AND CORRESPONDING MANUFACTURING METHOD - A micromechanical sensor system includes a micromechanical sensor chip surrounded at least laterally by a molded housing which has a front side and a rear side. The micromechanical sensor chip includes a chip area on the rear side, which is omitted from the molded housing, and a rewiring device formed on the rear side, which, starting from the chip area, extends to the surrounding molded housing on the rear side, and from there, past at least one via from the rear side to the front side of the molded housing. | 03-05-2015 |
| 20150090042 | Pressure Sensor Package with Integrated Sealing - A pressure sensor package includes a lead and a semiconductor die spaced apart from the lead and including a terminal and a diaphragm disposed at a first side of the die. The die is configured to change an electrical parameter responsive to a pressure difference across the diaphragm. The package further includes an electrical conductor connecting the terminal to the lead, a molding compound encasing the electrical conductor, the die and part of the lead, a cavity in the molding compound exposing the diaphragm, and a sealing ring disposed on a side of the molding compound with the cavity. The sealing ring surrounds the cavity and has a lower elastic modulus than the molding compound. Alternatively, the sealing ring can be a ridge of the molding compound that protrudes from the side of the molding compound with the cavity and surrounds the cavity. A package manufacturing method is also provided. | 04-02-2015 |
| 20150316436 | VERTICAL MEMBRANES FOR PRESSURE SENSING APPLICATIONS - Pressure sensors having vertical diaphragms or membranes. A vertical diaphragm may be located in a first silicon wafer between a first and second cavity, where the first and second cavities are covered by a second silicon wafer. One or more active or passive devices or components may be located on a top of the vertical diaphragm. | 11-05-2015 |
| 20150338300 | PRESSURE SENSOR, MICROPHONE, ULTRASONIC SENSOR, BLOOD PRESSURE SENSOR, AND TOUCH PANEL - According to an embodiment, a pressure sensor includes a support part, a flexible membrane part, and a magnetoresistive element. The flexible membrane part is supported by the support part, and includes a first region and a second region with rigidity lower than rigidity of the first region. The magnetoresistive element is provided on the membrane part, and includes a first magnetic layer, a second magnetic layer, and a spacer layer provided between the first magnetic layer and the second magnetic layer. | 11-26-2015 |
| 20150362392 | PRESSURE SENSOR AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a pressure sensor includes: preparing a stem which has a cylindrical shape with a bottom as a diaphragm; mounting a sensor chip on the diaphragm; preparing a conductive member, in which an internal connection region is integrated with an external connection region electrically connected to an external circuit by an outer frame; forming a first resin mold to couple the internal connection region to the external connection region; separating the outer frame from the internal connection region and the external connection region; arranging the internal connection region in the stem; and electrically connecting the sensor chip and the internal connection region through the first connection member. | 12-17-2015 |
| 20150377812 | PRESSURE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a pressure sensor that outputs a temperature change caused in an electrical resistor according to a pressure of a gas, as a resistance change in the electrical resistor. The pressure sensor includes: a base substrate including a recess formed therein, a floating film formed on the base substrate, a heater formed on a surface of the floating film and configured to heat the floating film when a current flows therein, and a temperature sensor formed as the electrical resistor on the surface of the floating film. The temperature sensor changes a voltage drop with respect to a current flowing therein according to the temperature of the floating film. | 12-31-2015 |
