Patent application number | Description | Published |
20080246497 | SEMICONDUCTOR WAFER INSPECTION APPARATUS - Efficiency of a charging processing of an insulator sample is improved. And, an electron optical system is adjusted according to a contact resistance value of the insulator sample. Breakdown of a sample is performed before the charging processing, and then, the charging processing is performed. A control parameter of the electron optical system is selected using a result of a resistance value of the sample for checking the breakdown. | 10-09-2008 |
20080277583 | Charged particle beam apparatus - Electrification affected on a surface of a sample which is caused by irradiation of a primary charged particle beam is prevented when plural frames are integrated to obtain an image of a predetermined area of the sample in a charged particle beam apparatus. The predetermined area of the sample is scanned with a primary electron beam from an electron gun, and plural frames are generated and integrated while detecting generated secondary electrons with a detector to obtain the image of the predetermined area. If it is determined by a detection signal of the detector that an electrification amount at the predetermined area becomes a specified value when generating plural frames, an electricity removal voltage is applied to a boosting electrode to remove or reduce the electrification, prior to generation of the next frame. Accordingly, the signal-to-noise ratio of the image obtained by integrating plural frames can be improved. | 11-13-2008 |
20090057557 | Localized static charge distribution precision measurement method and device - A charged particle beam device including a function for measuring localized static charges on a sample. A primary charged particle beam scans a sample positioned in a mirror state to acquire an image. The acquired image may be an image of the sample or may be an image of a structural component in the charged particle optical system. The acquired image is compared with a standard sample image and the localized static charge is measured. | 03-05-2009 |
20090166557 | Charge control apparatus and measurement apparatus equipped with the charge control apparatus - The invention solves charge nonuniformity of a specimen surface resulting from emission variation of a carbon nanotube electron source and individual difference of emission characteristics. During charge control processing, charge of the specimen surface is measured in real time. As means for solving charge nonuniformity resulting from nonuniformity of electron illumination density, electrons illuminating the specimen and the specimen are moved relatively to average electron illumination density. Moreover, an absorption current flowing into the specimen and the numbers of secondary electrons emitted from the specimen and of backscattered electrons are measured as means for monitoring charge of the specimen surface in real time. | 07-02-2009 |
20090179151 | APPARATUS AND METHOD FOR INSPECTION AND MEASUREMENT - An electrification control electrode B is installed at a measured or inspected specimen side of an electrification control electrode A, and a constant voltage is applied from an electrification control electrode control portion of an electrification control electrode B according to an electrification state of a specimen, whereby a variation of an electrification state and a potential barrier of a specimen surface formed before an inspection is suppressed. A retarding potential is applied by an electrification control electrode, and the electrification control electrode B is disposed below the electrification control electrode A adjusted to equal potential to a specimen. As a result, it is possible to adjust the amount that secondary electrons emitted from a specimen such as a wafer to which a primary electron beam is irradiated return to a specimen, and thus it is possible to stably maintain an inspection condition of high sensitivity during an inspection. | 07-16-2009 |
20100051806 | CHARGED PARTICLE BEAM APPARATUS - A charged particle beam apparatus is provided which has high resolving power and a wide scanning region (observation field of view). The apparatus has a unit for adjusting the focus, a unit for adjusting astigmatism, a unit for controlling and detecting scanning positions and a controller operative to control the focus adjustment and astigmatism adjustment at a time in interlocked relation to the scanning positions, thereby assuring compatibility between the high resolving power and the observation view field of a wide area. | 03-04-2010 |
20110303843 | SAMPLE OBSERVING METHOD AND SCANNING ELECTRON MICROSCOPE - Provided is a sample observing method wherein the effect on throughput is minimized, and a pattern profile can be obtained at high accuracy even in a complicated LSI pattern, regardless of the scanning direction of an electron beam. In the sample observing method, the presence or absence of an edge parallel to a scanning direction ( | 12-15-2011 |
20120153145 | SCANNING ELECTRON MICROSCOPE AND SAMPLE OBSERVATION METHOD - A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning condition according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided. | 06-21-2012 |
20140027635 | CHARGED PARTICLE BEAM APPARATUS - Provided is a charged particle beam apparatus adapted so that even when an additional device is not mounted in the charged particle beam apparatus, the apparatus rapidly removes, by neutralizing, a local charge developed on a region of a sample that has been irradiated with a charged particle beam. | 01-30-2014 |
20150036914 | METHOD FOR ESTIMATING SHAPE BEFORE SHRINK AND CD-SEM APPARATUS - In the present invention, at the time of measuring, using a CD-SEM, a length of a resist that shrinks when irradiated with an electron beam, in order to highly accurately estimate a shape and dimensions of the resist before shrink, a shrink database with respect to various patterns is previously prepared, said shrink database containing cross-sectional shape data obtained prior to electron beam irradiation, a cross-sectional shape data group and a CD-SEM image data group, which are obtained under various electron beam irradiation conditions, and models based on such data and data groups, and a CD-SEM image of a resist pattern to be measured is obtained (S | 02-05-2015 |