Patent application number | Description | Published |
20110076075 | Lubricant applicator, image forming apparatus, and method of mounting lubricant applicator - A lubricant applicator includes: a lubricant application unit that is arranged so as to be in contact with a surface of an image carrier, scrapes a solid lubricant, and applies the solid lubricant onto the surface of the image carrier while moving a surface of the lubricant application unit; a lubricant holding member that holds the solid lubricant; and a lubricant biasing unit that biases the solid lubricant against the lubricant application unit. The lubricant biasing unit is housed in a housing under a state that one end of the lubricant biasing unit is held by the lubricant holding member so that a position of the one end of the lubricant biasing unit is restricted, and another end of the lubricant biasing unit is held by a biasing-unit holding member that is provided to restrict a position of the another end of the lubricant biasing unit. | 03-31-2011 |
20110097124 | Waste-toner collecting device, process cartridge, and image forming apparatus - A waste-toner collecting device includes a waste toner collector that collects and stores therein non-transferred toner as waste toner conveyed from a cleaning unit via the conveying path; and a leveling member that levels waste toner accumulated inside the waste toner collector, and drive of which is controlled so that driving conditions thereof are varied based on information of an image formed on the image carrier. The switching of the driving conditions of the leveling member is controlled so as to be performed after a delay time during which the non-transferred toner collected in the cleaning unit reaches the waste-toner collector via the conveying path. | 04-28-2011 |
20110123239 | Lubricant applicator, process unit including the lubricant applicator, transfer unit including the lubricant applicator, and image forming apparatus including the process unit or the transfer unit - A lubricant applicator includes a lubricant and a rotatable lubricant application member. The rotatable lubricant application member contacts the lubricant and an application target to apply the lubricant to the application target while rotating. The lubricant application member includes a core member, a first wound portion including a bristle member wound spirally around the periphery of the core member in a first direction, and a second wound portion including a bristle member wound spirally around the periphery of the core member in a second direction opposite the first direction in an axial direction of the core member. A process unit includes the lubricant applicator. A transfer device includes the lubricant applicator. An image forming apparatus includes at least one of the process unit and the transfer device and the lubricant applicator. | 05-26-2011 |
20110217101 | Lubricant applying device, process cartridge, and image forming apparatus - A lubricant applying device includes a solid lubricant, and a rotatable applying member scraping lubricant off the solid lubricant and applying the scraped lubricant onto an application subject. In the lubricant applying device, a pressing unit applies that applies an applying pressure of pressing the solid lubricant against the applying member and that varies the applying pressure in accordance with a rotation speed of the applying member. | 09-08-2011 |
20110274447 | PROCESS UNIT AND IMAGE FORMING APPARATUS INCLUDING SAME - A process unit including a first housing detachably attachable to an image forming apparatus, an image carrier to carry an image on a surface thereof, a charger to charge the surface of the image carrier, a developing device to form the image on the surface of the image carrier, a cleaning device to remove toner from the surface of the image carrier, a lubricant to be supplied to the surface of the image carrier, a lubricant container to contain the lubricant, and a waste toner container to store the toner removed from the surface of the image carrier. The first housing includes the image carrier and at least one of the charger, the developing device, and the cleaning device. The lubricant, the lubricant container, and the waste toner container together are detachably attachable to the first housing. | 11-10-2011 |
20120014728 | Waste toner container and image forming apparatus incorporating same - A waste toner container used in an image forming apparatus includes a waste toner reservoir extending in a depth direction of the image forming apparatus for containing waste toner removed from an image bearer, an inlet portion provided above the waste toner reservoir, including a waste toner inlet to receive the waste toner flowing to the waste toner reservoir, a first agitator provided in the waste toner reservoir, to transport the waste toner therein in the depth direction, a rotary member provided in the inlet portion, including a rotary shaft extending in a width direction perpendicular to the depth direction, and a drive transmission unit provided outside the waste toner reservoir, to transmit a drive force from the rotary member provided in the inlet portion to the first agitator provided in the waste toner reservoir and to drive the first agitator in conjunction with rotation of the rotary member. | 01-19-2012 |
20120107012 | Charging Device, Process Cartridge Incorporating Same, And Image Forming Apparatus Incorporating Same - A charging device, which is incorporable in a process cartridge and an image forming apparatus, includes a charging roller and a cleaning device. The charging roller charges an image bearing member having a surface on which an electrostatic latent image is formed. The cleaning device cleans the charging roller. The cleaning device includes a cleaning roller, a shaft, and support members. The cleaning roller contacts the surface of the charging roller to clean the surface. The support members rotatably support the cleaning roller, each of which including a slot. The slot allows a variable distance between the charging roller and the cleaning roller, and is inclined, in the direction of rotation of the charging roller, relative to a straight line connecting the rotation center of the charging roller and the rotation center of the cleaning roller. | 05-03-2012 |
20120195661 | Lubricant Supplying Device, Process Cartridge, And Image Forming Apparatus - A lubricant supplying device includes a compressing spring that has one end coming into contact with a holding member in order to bias a solid lubricant toward a lubricant supplying roller and a casing that covers the outside of the device. Then, the casing includes an opening portion that allows the other end of the compressing spring, having the one end coming into contact with the holding member, to be exposed therethrough, and the casing further includes a cover member that is installed in the opening portion in a removable manner so that the cover member comes into contact with the other end of the compressing spring. | 08-02-2012 |
20120237230 | WASTE TONER CONTAINER AND IMAGE FORMING APPARATUS INCLUDING SAME - A waste toner container includes a waste toner reservoir extending in a depth direction, an inlet portion provided above the waste toner reservoir, in which at least one waste toner inlet is formed, a first conveyance member provided in the waste toner reservoir to transport the waste toner in the depth direction, the first conveyance member movable upward as the amount of the waste toner in the waste toner reservoir increases, a second conveyance member provided in the inlet portion to transport the waste toner in a width direction and including a drive transmitter to transmit a driving force from the second conveyance member to the first conveyance member, and a waste toner detection unit to detect whether an amount of the waste toner in the waste toner container reaches a predetermined amount by detecting upward movement of the first conveyance member. | 09-20-2012 |
20130243449 | LUBRICANT SUPPLYING DEVICE, IMAGE FORMING APPARATUS, AND PROCESS CARTRIDGE - A lubricant supplying device includes: lubricant; a supplying member that supplies the lubricant to a lubricant supply target; and a remaining amount detecting unit that detects that a remaining amount of the lubricant is equal to or smaller than a certain amount. The remaining amount detecting unit includes a first electrode member and a second electrode member. The lubricant supplying device further comprises a member that causes at least a part of the second electrode member to move and causes the second electrode member to abut the first electrode member with an increase in consumption of the lubricant. | 09-19-2013 |
20130251380 | LUBRICANT SUPPLYING DEVICE, IMAGE FORMING APPARATUS, AND PROCESS CARTRIDGE - In an embodiment, provided is a lubricant supplying device that includes: a solid lubricant; a supplying member that supplies lubricant of the solid lubricant to a lubricant supplying target; and a remaining amount detecting unit that detects an amount of the solid lubricant being at a given amount or less. The remaining amount detecting unit is provided on a downstream side in a rubbing direction of the supplying member with respect to the solid lubricant. | 09-26-2013 |
20130251381 | LUBRICANT SUPPLYING DEVICE, AND IMAGE FORMING APPARATUS - In the present invention, a lubricant supplying device includes a lubricant end determining unit that determines that a solid lubricant is in an end state when the amount of a lubricant supplying operation reaches a threshold after a residual amount detecting unit detects that the residual amount of the solid lubricant is equal to or smaller than a predetermined amount. The lubricant end determining unit makes a threshold of the amount of the lubricant supplying operation at temperature or humidity of equal to or lower than a predetermined value lower than a threshold of the amount of the lubricant supplying operation at temperature or humidity of higher than the predetermined value. | 09-26-2013 |
20140037303 | LUBRICANT APPLICATOR, IMAGE FORMING APPARATUS, AND PROCESS CARTRIDGE - A lubricant applicator includes a block of lubricant, a supply member contactable against the block of lubricant to scrape the block of lubricant, and a lubricant gauge including a first electrode and a second electrode. The lubricant gauge is electrically connected to the first electrode and the second electrode to detect whether an amount of lubricant remaining is less than a threshold value based on establishment of electrical continuity between the first electrode and the second electrode. One of the first electrode and the second electrode includes a projection projecting toward the other one of the first electrode and the second electrode. | 02-06-2014 |
20140147170 | IMAGE CARRIER, PROCESS CARTRIDGE, AND IMAGE FORMING APPARATUS - An image carrier includes a tubular image carrier body to carry an image on an outer circumferential surface thereof, a shaft disposed inside the image carrier body, a first flange mounted on the shaft, and a second flange spaced apart from the first flange in an axial direction of the image carrier and mounted on the shaft. Each of the first flange and the second flange includes a through-hole contacting the shaft, a first engagement portion to engage a lateral end of the image carrier body in the axial direction of the image carrier, and a second engagement portion, constituting at least a part of the through-hole, to engage the shaft. The second engagement portion is disposed inboard from the first engagement portion in the axial direction of the image carrier. | 05-29-2014 |
20140199091 | DETACHABLE UNIT AND IMAGE FORMING APPARATUS INCORPORATING SAME - A detachable device, which can be included in an image forming apparatus, includes a unit drive mechanism, and a cover disposed at one end and an opposite end in the given attachment/detachment direction to cover the unit drive mechanism thereof. The cover includes a first cover and a second cover. The first cover includes at least one first inlet port to intake air from the apparatus body and guide the air to the detachable unit. The second cover includes a second inlet port to intake the air guided into the detachable unit and an air outlet port to exhaust the air introduced from the second inlet port to the apparatus body. | 07-17-2014 |
20140270881 | LUBRICANT SUPPLY DEVICE, PROCESS UNIT, IMAGE FORMING APPARATUS, AND PROCESS UNIT MANUFACTURING METHOD - A lubricant supply device includes a solid lubricant, a lubricant holder to hold the solid lubricant, a lubricant supply member to supply lubricant to a lubrication target, a pressing member to press the solid lubricant toward the lubricant supply member, and a pressing force adjuster to change an amount of pressing force exerted by the pressing member. | 09-18-2014 |
Patent application number | Description | Published |
20090075456 | Method for manufacturing SOI substrate and method for manufacturing semiconductor device - A highly reliable semiconductor device capable of high speed operation is manufactured over a flexible substrate at a high yield. A separation layer is formed over an insulating substrate by a sputtering method; the separation layer is flattened by a reverse sputtering method; an insulating film is formed over the flattened separation layer; a damaged area is formed by introducing hydrogen or the like into a semiconductor substrate; an insulating film is formed over the semiconductor substrate in which the damaged area is formed; the insulating film formed over the insulating substrate is bonded to the insulating film formed over the semiconductor substrate, the semiconductor substrate is separated at the damaged area so that a semiconductor layer is formed over the insulating substrate; the semiconductor layer is flattened so as to form an SOI substrate; and the semiconductor device is formed over the SOI substrate. | 03-19-2009 |
20090170287 | METHOD FOR MANUFACTURING SOI SUBSTRATE - A single crystal semiconductor substrate and a base substrate are prepared; a first insulating film is formed over the single crystal semiconductor substrate; a separation layer is formed by introducing ions at a predetermined depth through a surface of the single crystal semiconductor substrate; plasma treatment is performed on the base substrate so as to planarize a surface of the base substrate; a second insulating film is formed over the planarized base substrate; a surface of the first insulating film is bonded to a surface of the second insulating film by making the surface of the single crystal semiconductor substrate and the surface of the base substrate face each other; and a single crystal semiconductor film is provided over the base substrate with the second insulating film and the first insulating film interposed therebetween by performing separation at the separation layer. | 07-02-2009 |
20100062546 | METHOD OF MANUFACTURING SOI SUBSTRATE - An object of the present invention is to improve use efficiency of a semiconductor substrate without lowering efficiency of a fabrication process. Another object of the present invention is to achieve cost reduction by effective use of a semiconductor substrate whose thickness is reduced due to repeated use in a process of manufacturing an SOI substrate. In a process of manufacturing an SOI substrate, a semiconductor substrate is used as a bond substrate a predetermined number of times, or as long as it meets predetermined conditions. In a case where a first single crystal semiconductor substrate cannot be used as a bond substrate, it is bonded to a second single crystal semiconductor substrate. Then, a stacked-layer substrate formed from the first single crystal semiconductor substrate and the second single crystal semiconductor substrate bonded to each other is used as a bond substrate in a process of manufacturing an SOI substrate. | 03-11-2010 |
20100210078 | Manufacturing Method of Semiconductor Device - A single crystal semiconductor layer is provided over a base substrate with a second insulating film, a first conductive film, and a first insulating film interposed therebetween; an impurity element having one conductivity type is selectively added to the single crystal semiconductor layer, using a first resist mask; the first resist mask is removed; a second conductive film is formed over the single crystal semiconductor layer; a second resist mask having a depression is formed over the second conductive film; a first etching is performed on the first insulating film, the first conductive film, the second insulating film, the single crystal semiconductor layer, and the second conductive film, using the second resist mask; and a second etching with accompanying side-etching is performed on a part of the first conductive film to form a pattern of a gate electrode layer. | 08-19-2010 |
20100231374 | WHEELED VEHICLE MOUNTED WITH RFID TAG, RFID TAG, SPEED MEASUREMENT SYSTEM, AND SPEED MEASUREMENT METHOD - An RFID tag having a memory portion for holding information on a wheeled vehicle is mounted on the wheeled vehicle, and an external interrogator and the RFID tag exchange information with each other. Further, an RFID tag having a memory portion for holding information on a wheeled vehicle and a communication device for exchanging information with the MD tag are set on the wheeled vehicle. When the external interrogator and the RFID tag exchange information with each other, the communication device holds information of a situation, for example, speed information, information on date and time, and the like in the memory portion in the RFID tag. | 09-16-2010 |
20110159611 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A highly reliable semiconductor device capable of high speed operation is manufactured over a flexible substrate at a high yield. A separation layer is formed over an insulating substrate by a sputtering method; the separation layer is flattened by a reverse sputtering method; an insulating film is formed over the flattened separation layer; a damaged area is formed by introducing hydrogen or the like into a semiconductor substrate; an insulating film is formed over the semiconductor substrate in which the damaged area is formed; the insulating film formed over the insulating substrate is bonded to the insulating film formed over the semiconductor substrate, the semiconductor substrate is separated at the damaged area so that a semiconductor layer is formed over the insulating substrate; the semiconductor layer is flattened so as to form an SOI substrate; and the semiconductor device is formed over the SOI substrate. | 06-30-2011 |
20110193079 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In a miniaturized transistor, a gate insulating layer is required to reduce its thickness; however, in the case where the gate insulating layer is a single layer of a silicon oxide film, a physical limit on thinning of the gate insulating layer might occur due to an increase in tunneling current, i.e. gate leakage current. With the use of a high-k film whose relative permittivity is higher than or equal to 10 is used for the gate insulating layer, gate leakage current of the miniaturized transistor is reduced. With the use of the high-k film as a first insulating layer whose relative permittivity is higher than that of a second insulating layer in contact with an oxide semiconductor layer, the thickness of the gate insulating layer can be thinner than a thickness of a gate insulating layer considered in terms of a silicon oxide film. | 08-11-2011 |
20110284844 | SEMICONDUCTOR DEVICE - An object of the present invention is to manufacture a semiconductor device where fluctuation in electrical characteristics is small and reliability is high in a transistor in which an oxide semiconductor is used. An insulating layer from which oxygen is released by heating is used as a base insulating layer of an oxide semiconductor layer which forms a channel. Oxygen is released from the base insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the base insulating layer and the oxide semiconductor layer can be reduced. Thus, a semiconductor device where fluctuation in electrical characteristics is small and reliability is high can be manufactured. | 11-24-2011 |
20110284845 | SEMICONDUCTOR DEVICE - An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured. | 11-24-2011 |
20110284846 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured. | 11-24-2011 |
20110284847 | SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device with a transistor in which an oxide semiconductor is used. An insulating layer on a back channel side of the oxide semiconductor layer has capacitance of lower than or equal to 1.5×10 | 11-24-2011 |
20110284854 | SEMICONDUCTOR DEVICE - In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which forms a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×10 | 11-24-2011 |
20110303913 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object of an embodiment of the present invention is to manufacture a highly-reliable semiconductor device comprising a transistor including an oxide semiconductor, in which change of electrical characteristics is small. In the transistor including an oxide semiconductor, oxygen-excess silicon oxide (SiO | 12-15-2011 |
20120001335 | Semiconductor Device and Manufacturing Method Thereof - Provided is a method for manufacturing a semiconductor device having favorable electric characteristics with a high yield. A groove and/or a contact hole reaching a semiconductor region or a conductive region is formed in an insulating film covering the semiconductor region or the conductive region; a first conductive film is formed in the groove and/or the contact hole; the first conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas and to an atmosphere containing water to be fluidized partially or entirely; and a second conductive film is formed over the first conductive film. | 01-05-2012 |
20120018727 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An insulating layer which releases a large amount of oxygen is used as an insulating layer in contact with a channel region of an oxide semiconductor layer, and an insulating layer which releases a small amount of oxygen is used as an insulating layer in contact with a source region and a drain region of the oxide semiconductor layer. By releasing oxygen from the insulating layer which releases a large amount of oxygen, oxygen deficiency in the channel region and an interface state density between the insulating layer and the channel region can be reduced, so that a highly reliable semiconductor device having small variation in electrical characteristics can be manufactured. The source region and the drain region are provided in contact with the insulating layer which releases a small amount of oxygen, thereby suppressing the increase of the resistance of the source region and the drain region. | 01-26-2012 |
20120032172 | SEMICONDUCTOR DEVICE - A semiconductor device including the following components and a manufacturing method of the semiconductor device are provided. The semiconductor device includes a substrate; an oxide semiconductor layer over the substrate; a source electrode and a drain electrode whose end portion has a taper angle and whose upper end portion has a curved surface, the source electrode and the drain electrode being electrically connected to the oxide semiconductor layer; a gate insulating layer being in contact with a part of the oxide semiconductor layer and covering the oxide semiconductor layer, the source electrode, and the drain electrode; and a gate electrode overlapping with the oxide semiconductor layer and being over the gate insulating layer. | 02-09-2012 |
20120112183 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device including an oxynitride semiconductor whose carrier density is controlled. By introducing controlled nitrogen into an oxide semiconductor layer, a transistor in which an oxynitride semiconductor having desired carrier density and on characteristics is used for a channel can be manufactured. Further, with the use of the oxynitride semiconductor, even when a low resistance layer or the like is not provided between an oxynitride semiconductor layer and a source electrode and between the oxynitride semiconductor layer and a drain electrode, favorable contact characteristics can be exhibited. | 05-10-2012 |
20120119212 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor. | 05-17-2012 |
20120138921 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A conductive film to be a gate electrode, a first insulating film to be a gate insulating film, a semiconductor film in which a channel region is formed, and a second insulating film to be a channel protective film are successively formed. With the use of a resist mask formed by performing light exposure with the use of a photomask which is a multi-tone mask and development, i) in a region without the resist mask, the second insulating film, the semiconductor film, the first insulating film, and the conductive film are successively etched, ii) the resist mask is made to recede by ashing or the like and only the region of the resist mask with small thickness is removed, so that part of the second insulating film is exposed, and iii) the exposed part of the second insulating film is etched, so that a pair of opening portions is formed. | 06-07-2012 |
20120153275 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To manufacture a transistor whose threshold voltage is controlled without using a backgate electrode, a circuit for controlling the threshold voltage, and an impurity introduction method. To manufacture a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption using the transistor. A gate electrode including a tungsten oxide film whose composition is controlled is used. The composition or the like is adjusted by a film formation method of the tungsten oxide film, whereby the work function can be controlled. By using the tungsten oxide film whose work function is controlled as part of the gate electrode, the threshold of the transistor can be controlled. Using the transistor whose threshold voltage is controlled, a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption can be manufactured. | 06-21-2012 |
20120193628 | SEMICONDUCTOR DEVICE - A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. A p-type oxide semiconductor material is contained in an n-type oxide semiconductor film, whereby carriers which are generated in the oxide semiconductor film without intention can be reduced. This is because electrons generated in the n-type oxide semiconductor film without intention are recombined with holes generated in the p-type oxide semiconductor material to disappear. Accordingly, it is possible to reduce carriers which are generated in the oxide semiconductor film without intention. | 08-02-2012 |
20120217499 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for forming a U-shaped vertically long groove in a region where a channel portion of a transistor is formed to make a channel length longer than an apparent channel length additionally requires a photolithography process for forming a groove; therefore, it has a problem in terms of costs and yield. By forming a three-dimensional channel region with the use of a gate electrode or a structure having an insulating surface, a channel length is made three times or more, preferably five times or more, further preferably ten times or more as long as a channel length when seen from the above. | 08-30-2012 |
20120223310 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor memory device includes a transistor and a capacitor. The transistor includes: an insulating film in which a groove portion is provided; a pair of electrodes separated so that the groove portion is sandwiched therebetween; an oxide semiconductor film which is in contact with the pair of electrodes and side surfaces and a bottom surface of the groove portion and has a thickness value smaller than a depth value of the groove portion; a gate insulating film covering the oxide semiconductor film; and a gate electrode provided to overlap with the oxide semiconductor film with the gate insulating film positioned therebetween. | 09-06-2012 |
20120223311 | SEMICONDUCTOR DEVICE - A semiconductor device of the present invention includes a gate electrode which includes a pair of first protrusions and a second protrusion provided between the pair of first protrusions; a gate insulating film covering the gate electrode; a semiconductor film which is in contact with the gate insulating film and overlaps with the pair of first protrusions and the second protrusion; and a pair of electrodes which is in contact with the semiconductor film and overlaps with the pair of first protrusions. The side edges of the semiconductor film are on the outer sides than the top surfaces of the pair of first protrusions in the direction of the channel width of the semiconductor film. The side edges of the pair of electrodes are on the outer sides than the top surfaces of the pair of first protrusions in the direction of the channel width of the semiconductor film. | 09-06-2012 |
20120241736 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In the transistor including an oxide semiconductor film, a gate insulating film of the transistor including an oxide semiconductor film has a stacked-layer structure of the hydrogen capture film and the hydrogen permeable film. At this time, the hydrogen permeable film is formed on a side which is in contact with the oxide semiconductor film, and the hydrogen capture film is formed on a side which is in contact with a gate electrode. After that, hydrogen released from the oxide semiconductor film is transferred to the hydrogen capture film through the hydrogen permeable film by the heat treatment. | 09-27-2012 |
20120241737 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In the transistor including an oxide semiconductor film, which includes a film for capturing hydrogen from the oxide semiconductor film (a hydrogen capture film) and a film for diffusing hydrogen (a hydrogen permeable film), hydrogen is transferred from the oxide semiconductor film to the hydrogen capture film through the hydrogen permeable film by heat treatment. Specifically, a base film or a protective film of the transistor including an oxide semiconductor film has a stacked-layer structure of the hydrogen capture film and the hydrogen permeable film. At this time, the hydrogen permeable film is formed on a side which is in contact with the oxide semiconductor film. After that, hydrogen released from the oxide semiconductor film is transferred to the hydrogen capture film through the hydrogen permeable film by the heat treatment. | 09-27-2012 |
20120241738 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device having excellent electric characteristics and a method for manufacturing the semiconductor device are provided. A method for manufacturing a semiconductor device includes the steps of: forming a gate electrode; forming a gate insulating film to cover the gate electrode; forming an oxide semiconductor film over the gate insulating film; forming a hydrogen permeable film over the oxide semiconductor film; forming a hydrogen capture film over the hydrogen permeable film; performing heat treatment to release hydrogen from the oxide semiconductor film; forming a source electrode and a drain electrode to be in contact with a part of the oxide semiconductor film; and removing an exposed portion of the hydrogen capture film to form a channel protective film formed of the hydrogen permeable film. A semiconductor device manufactured by the above method is also provided. | 09-27-2012 |
20120319175 | SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME - A transistor in which an electron state at an interface between an oxide semiconductor film and an underlayer film in contact with the oxide semiconductor film is favorable is provided. A value obtained by dividing a difference between nearest neighbor interatomic distance of the underlayer film within the interface and a lattice constant of the semiconductor film by the nearest neighbor interatomic distance of the underlayer film within the interface is less than or equal to 0.15. For example, an oxide semiconductor film is deposited over an underlayer film which contains stabilized zirconia which has a cubic crystal structure and has the (111) plane orientation, whereby the oxide semiconductor film including a crystal region having a high degree of crystallization can be provided directly on the underlayer film. | 12-20-2012 |
20130009149 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object of an embodiment of the present invention is to provide a semiconductor device which includes a transistor including an oxide semiconductor with high field-effect mobility, a small variation in threshold voltage, and high reliability. The semiconductor device includes a transistor which includes an insulating substrate from which oxygen is released by heat treatment and an oxide semiconductor film over the insulating substrate. A channel is formed in the oxide semiconductor film. The insulating substrate from which oxygen is released by heat treatment can be manufactured by implanting oxygen ions into at least a region of an insulating substrate on the side provided with the oxide semiconductor film. | 01-10-2013 |
20130099237 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance. | 04-25-2013 |
20130119377 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - By reducing the contact resistance between an oxide semiconductor film and a metal film, a transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device includes a pair of electrodes over an insulating surface; an oxide semiconductor film in contact with the pair of electrodes; a gate insulating film over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween. In the semiconductor device, the pair of electrodes contains a halogen element in a region in contact with the oxide semiconductor film. Further, plasma treatment in an atmosphere containing fluorine can be performed so that the pair of electrodes contains the halogen element in a region in contact with the oxide semiconductor film. | 05-16-2013 |
20130175530 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a fin-type transistor having an oxide semiconductor in a channel formation region in which the channel formation region comprising an oxide semiconductor is three-dimensionally structured and a gate electrode is arranged to extend over the channel formation region. Specifically, the fin-type transistor comprises: an insulator protruding from a substrate plane; an oxide semiconductor film extending beyond the insulator; a gate insulating film over the oxide semiconductor film; and a gate electrode over and extending beyond the oxide semiconductor film. This structure allows the expansion of the width of the channel formation region, which enables the miniaturization and high integration of a semiconductor device having the transistor. Additionally, the extremely small off-state current of the transistor contributes to the formation of a semiconductor device with significantly reduced power consumption. | 07-11-2013 |
20130240875 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device in which the parasitic resistance affected by a source and a drain is reduced and the parasitic capacitance is small is provided. The semiconductor device includes a pair of semiconductor layers; a semiconductor film in contact with each of the pair of semiconductor layers; a gate electrode overlapping with the semiconductor film and at least partly overlapping with the pair of semiconductor layers; and a gate insulating film between the semiconductor film and the gate electrode. A region which is in the pair of semiconductor layers and overlaps with the gate electrode and the semiconductor film has higher resistance than regions other than the region in the pair of semiconductor layers. | 09-19-2013 |
20130264567 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object of an embodiment of the present invention is to manufacture a highly-reliable semiconductor device comprising a transistor including an oxide semiconductor, in which change of electrical characteristics is small. In the transistor including an oxide semiconductor, oxygen-excess silicon oxide (SiO | 10-10-2013 |
20130309822 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An insulating layer which releases a large amount of oxygen is used as an insulating layer in contact with a channel region of an oxide semiconductor layer, and an insulating layer which releases a small amount of oxygen is used as an insulating layer in contact with a source region and a drain region of the oxide semiconductor layer. By releasing oxygen from the insulating layer which releases a large amount of oxygen, oxygen deficiency in the channel region and an interface state density between the insulating layer and the channel region can be reduced, so that a highly reliable semiconductor device having small variation in electrical characteristics can be manufactured. The source region and the drain region are provided in contact with the insulating layer which releases a small amount of oxygen, thereby suppressing the increase of the resistance of the source region and the drain region. | 11-21-2013 |
20140011319 | SEMICONDUCTOR DEVICE - An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured. | 01-09-2014 |
20140120660 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An insulating layer which releases a large amount of oxygen is used as an insulating layer in contact with a channel region of an oxide semiconductor layer, and an insulating layer which releases a small amount of oxygen is used as an insulating layer in contact with a source region and a drain region of the oxide semiconductor layer. By releasing oxygen from the insulating layer which releases a large amount of oxygen, oxygen deficiency in the channel region and an interface state density between the insulating layer and the channel region can be reduced, so that a highly reliable semiconductor device having small variation in electrical characteristics can be manufactured. The source region and the drain region are provided in contact with the insulating layer which releases a small amount of oxygen, thereby suppressing the increase of the resistance of the source region and the drain region. | 05-01-2014 |
20140183523 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device with high aperture ratio is provided. The semiconductor device includes a nitride insulating film, a transistor over the nitride insulating film, and a capacitor including a pair of electrodes over the nitride insulating film. An oxide semiconductor layer is used for a channel formation region of the transistor and one of the electrodes of the capacitor. A transparent conductive film is used for the other electrode of the capacitor. One electrode of the capacitor is in contact with the nitride insulating film, and the other electrode of the capacitor is electrically connected to one of a source electrode and a drain electrode of the transistor. | 07-03-2014 |
20140183528 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device with high aperture ratio is provided. The semiconductor device includes a transistor and a capacitor having a pair of electrodes. An oxide semiconductor layer formed over the same insulating surface is used for a channel formation region of the transistor and one of the electrodes of the capacitor. The other electrode of the capacitor is a transparent conductive film. One electrode of the capacitor is electrically connected to a wiring formed over the insulating surface over which a source electrode or a drain electrode of the transistor is provided, and the other electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the transistor. | 07-03-2014 |
20140239297 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer. | 08-28-2014 |
20140252347 | SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device with a transistor in which an oxide semiconductor is used. An insulating layer on a back channel side of the oxide semiconductor layer has capacitance of lower than or equal to 2×10 | 09-11-2014 |
20140319517 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a transistor formed using an oxide semiconductor film with reduced oxygen vacancies. To provide a semiconductor device that operates at high speed. To provide a highly reliable semiconductor device. To provide a miniaturized semiconductor device. The semiconductor device includes an oxide semiconductor film; a gate electrode overlapping with the oxide semiconductor film; a gate insulating film between the oxide semiconductor film and the gate electrode; and a protective insulating film that is above the oxide semiconductor film, the gate electrode, and the gate insulating film and includes a region containing phosphorus or boron. | 10-30-2014 |
20140342498 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor. | 11-20-2014 |
20150041803 | Semiconductor Device and Method for Manufacturing Thereof - A transistor that is formed using an oxide semiconductor film is provided. A transistor that is formed using an oxide semiconductor film with reduced oxygen vacancies is provided. A transistor having excellent electrical characteristics is provided. A semiconductor device includes a first insulating film, a first oxide semiconductor film, a gate insulating film, and a gate electrode. The first insulating film includes a first region and a second region. The first region is a region that transmits less oxygen than the second region does. The first oxide semiconductor film is provided at least over the second region. | 02-12-2015 |
20150053975 | SEMICONDUCTOR DEVICE - In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which faints a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×10 | 02-26-2015 |
20150060853 | SEMICONDUCTOR DEVICE - A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. A p-type oxide semiconductor material is contained in an n-type oxide semiconductor film, whereby carriers which are generated in the oxide semiconductor film without intention can be reduced. This is because electrons generated in the n-type oxide semiconductor film without intention are recombined with holes generated in the p-type oxide semiconductor material to disappear. Accordingly, it is possible to reduce carriers which are generated in the oxide semiconductor film without intention. | 03-05-2015 |
20150084050 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance. | 03-26-2015 |
Patent application number | Description | Published |
20100291487 | SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION HAVING UREA GROUP - There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising: a hydrolyzable organosilane having a urea group; a hydrolysis product thereof; or a hydrolysis-condensation product thereof. The hydrolyzable organosilane is for example a compound of Formula (1): | 11-18-2010 |
20100304305 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING POLYMER HAVING NITROGEN-CONTAINING SILYL GROUP - There is provided a resist underlayer film for lithography causing no intermixing with a photoresist and having a dry etching rate higher than that of the photoresist, and a resist underlayer film forming composition for forming the underlayer film. A resist underlayer film forming composition for lithography comprising: a polymer containing a partial structure of Formula (1): | 12-02-2010 |
20100330505 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING CYCLIC AMINO GROUP - There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof as a silane, wherein a silane having a cyclic amino group is contained in an amount of less than 1% by mole, preferably 0.01 to 0.95% by mole. A film forming composition comprising a hydrolyzable organosilane having a cyclic amino group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. A resist underlayer film forming composition for lithography comprising a hydrolyzable organosilane having a cyclic amino group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The cyclic amino group may be a secondary amino group or a tertiary amino group. The hydrolyzable organosilane is a compound of Formula (1): | 12-30-2010 |
20110143149 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP - There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R | 06-16-2011 |
20110287369 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ANION GROUP - There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising a silane compound containing an anion group, wherein the silane compound containing an anion group is a hydrolyzable organosilane in which an organic group containing an anion group is bonded to a silicon atom and the anion group forms a salt structure, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The anion group may be a carboxylic acid anion, a phenolate anion, a sulfonic acid anion, or a phosphonic acid anion. The hydrolyzable organosilane may be a compound of Formula (1): R | 11-24-2011 |
20120070994 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING SULFIDE BOND - There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask; and a forming method of a resist pattern using the underlayer film forming composition for lithography. A resist underlayer film forming composition for lithography comprising: as a silicon atom-containing compound, a hydrolyzable organosilane containing a sulfur atom-containing group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein in the whole silicon atom-containing compound, the ratio of a sulfur atom to a silicon atom is less than 5% by mole. The hydrolyzable organosilane is preferably a compound of Formula (1): [R | 03-22-2012 |
20120178261 | SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM - There is provided a lithographic resist underlayer film-forming composition for forming a resist underlayer film which can be used as a hard mask. A lithographic resist underlayer film-forming composition including a silane compound having sulfonamide group, wherein the silane compound having sulfonamide group is a hydrolyzable organosilane having a sulfonamide group in the molecule, a hydrolyzate thereof, or a hydrolytic condensation product thereof. The composition including a silane compound having sulfonamide group and a silane compound lacking a sulfonamide group, wherein the silane compound having sulfonamide group is present within the silane compounds overall in a proportion of less than 1 mol %, for example 0.1 to 0.95 mol %. | 07-12-2012 |
20120315765 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING - There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography, includes as a silane compound, a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable organosilane is a hydrolyzable organosilane of Formula (1): | 12-13-2012 |
20130078814 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ANION GROUP - There is provided a method of making a semiconductor device utilizing a resist underlayer film forming composition comprising a silane compound containing an anion group, wherein the silane compound containing an anion group is a hydrolyzable organosilane in which an organic group containing an anion group is bonded to a silicon atom and the anion group forms a salt structure, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The anion group may be a carboxylic acid anion, a phenolate anion, a sulfonic acid anion, or a phosphonic acid anion. The hydrolyzable organosilane may be a compound of Formula (1): R | 03-28-2013 |
20130183830 | SILICON-CONTAINING COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM, WHICH CONTAINS ORGANIC GROUP CONTAINING PROTECTED ALIPHATIC ALCOHOL - Described herein are compositions for forming an underlayer film for a solvent-developable resist. These compositions can include a hydrolyzable organosilane having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof and a solvent. The composition can form a resist underlayer film including, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof, the silicon atom in the silane compound having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group in a ratio of 0.1 to 40% by mol based on the total amount of silicon atoms. Also described is a method for applying the composition onto a semiconductor substrate and baking the composition to form a resist underlayer film. | 07-18-2013 |
20130224957 | SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION HAVING FLUORINE-BASED ADDITIVE - A resist underlayer film forming composition for lithography includes: as a component (I), a fluorine-containing highly branched polymer obtained by polymerizing a monomer A having two or more radical polymerizable double bonds in the molecule thereof, a monomer B having a fluoroalkyl group and at least one radical polymerizable double bond in the molecule thereof, and a monomer D having a silicon atom-containing organic group and at least one radical polymerizable double bond in the molecule thereof, in the presence of a polymerization initiator C in a content of 5% by mole or more and 200% by mole or less, based on the total mole of the monomer A, the monomer B, and the monomer D; and as a component (II), a hydrolyzable silane compound, a hydrolysis product thereof, a hydrolysis-condensation product thereof, or a silicon-containing compound that is a combination of these compounds. | 08-29-2013 |
20130302991 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, CONTAINING SILICON THAT BEARS DIKETONE-STRUCTURE-CONTAINING ORGANIC GROUP - A composition for forming a lithographic resist underlayer film, including, as a silane, a hydrolyzable organosilane, a hydrolysate thereof, or a hydrolytic condensate thereof, wherein the silane includes a hydrolyzable organosilane of Formula (1) below: | 11-14-2013 |
20140120730 | THIN FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING TITANIUM AND SILICON - A thin film forming composition for forming resist underlayer film useable in the production of a semiconductor device, and a resist upper layer film absorbs undesirable UV light with a thin film as an upper layer of the EUV resist before undesirable UV light reaches the EUV resist layer in EUV lithography, an underlayer film (hardmask) for an EUV resist, a reverse material, and an underlayer film for a resist for solvent development. The thin film forming composition useable together with a resist in a lithography process, comprising a mixture of titanium compound (A) selected from: | 05-01-2014 |
20140170855 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING SULFONE STRUCTURE - A composition for forming a resist underlayer film for lithography, including: as a silane, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, or a hydrolysis-condensation product of the hydrolyzable organosilane, wherein the hydrolyzable organosilane is a compound of Formula (1): | 06-19-2014 |
20140377957 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION FOR SOLVENT DEVELOPMENT - A resist underlayer film for a resist pattern formation by developing a resist with organic solvent after exposure of resist. Method for manufacturing a semiconductor includes: applying onto a substrate a resist underlayer film forming composition including hydrolyzable silanes, hydrolysis products of hydrolyzable silanes, hydrolysis-condensation products of hydrolyzable silanes, or a combination thereof. Hydrolyzable silanes being silane of Formulas (1), (2) and (3). Silane of Formulas (1), (2) and (3) in total silanes in a ratio % by mole of 45-90:6-20:0-35; baking the applied resist underlayer film forming composition to form a resist underlayer film; applying a composition to form a resist film; exposing the resist film to light; developing the resist film after exposure, with organic solvent to obtain patterned resist film; and etching the resist underlayer film by using the patterned resist film and processing the substrate using the patterned resist underlayer film; wherein | 12-25-2014 |
Patent application number | Description | Published |
20090311899 | Connector - A connector includes a male connector including plural male terminals, a first body provided with the plural male terminals, and a first terminal housing formed with a first housing opening facing respective ends of the plural male terminals, and a female connector including plural female terminals paired with the plural male terminals, a female terminal box formed with plural female terminal openings facing ends of the plural female terminals respectively, and a second body provided with the plural female terminals and the female terminal box. The connector further includes foreign body preventing means for preventing a foreign body from being mixed into the specified receiving space of the first terminal housing. The foreign body preventing means includes a blocking sheet member enclosed in the specified receiving space of the first terminal housing for blocking or substantially blocking the first housing opening, and plural male terminal openings through which the male terminals pass at specified positions respectively in the blocking sheet member. | 12-17-2009 |
20100130074 | Male and female connection structure - A male and female connection structure includes a female terminal, and a male terminal to electrically connect to the female terminal by being inserted into a connection position of the female terminal and to electrically disconnect from the female terminal by being withdrawn from the connection position. The female terminal includes a dimple to electrically connect to the male terminal, a male terminal pressing spring disposed opposite the dimple for pressing the male terminal to be inserted on the dimple against the dimple, and a press switching part for switching between a non-pressed state that the male terminal pressing spring does not press the male terminal located in the female terminal and a pressed state that the male terminal pressing spring presses the male terminal located in the female terminal by changing a shape of the male terminal pressing spring. The press switching part switches the non-pressed state to the pressed state, when the male terminal is inserted into the connection position, by using an insertion force applied when the male terminal is inserted into the female terminal, and it switches the pressed state to the non-pressed state, when the male terminal is withdrawn from the connection position, by using a withdrawal force applied when the male terminal is withdrawn from the female terminal. | 05-27-2010 |
20110104929 | Connector - A connector includes a female connector for accommodating a cylindrical and deformable female terminal provided at an end of a cable, a male connector for accommodating a male terminal configured to be inserted into the female terminal, a fastening member provided slidably around an outer periphery of the female terminal, and configured to tighten the female terminal to fasten the male terminal when inserted into the female terminal, and a slide mechanism for sliding the fastening member, which is provided in the female connector. | 05-05-2011 |
20110104943 | Wire harness and method of manufacturing the same - A wire harness includes a cable, a connector comprising an outer housing comprising a resin, a cable insertion hole into which an end portion of the cable is inserted, and a concave portion formed on an insertion side of the cable insertion hole, and a welding member comprising a resin to provide air-tightness between the outer housing and the cable by being welded to the outer housing by ultrasonic welding. The welding member is formed around the cable so as to surround the cable while allowing a gap portion to have a predetermined clearance from the cable, and fitted into the concave portion of the outer housing. | 05-05-2011 |
20110130021 | CONNECTION STRUCTURE - A connection structure includes a male terminal housing with first connecting terminals, a female terminal housing with second connecting terminals, isolating plates in the male terminal housing, a connecting member to thereby collectively fix the first connecting terminals and the second connecting terminals at the contacts therebetween for electrical connections between the first connecting terminals and the second connecting terminals, and manipulation permitting means for permitting manipulation of the connecting member for collectively fixing the first connecting terminals and the second connecting terminals at the contacts therebetween respectively, when the male terminal housing and the female terminal housing are mated with each other in a specified mated state. | 06-02-2011 |
20110130022 | CONNECTION STRUCTURE - A connection structure includes a first terminal housing with first connecting terminals, a second terminal housing with second connecting terminals, isolating plates in the first terminal housing, a connecting member to collectively fix the first connecting terminals and the second connecting terminals at the contacts therebetween for electrical connections between the first connecting terminals and the second connecting terminals. The connecting member further includes a metallic elastic member disposed between the head and the isolating plate adjacent to the head to sequentially press the isolating plates in a stacking direction. The isolating plate adjacent to the head includes a recessed portion formed in a surface to contact the elastic member for accommodating one end of the elastic member pressing the isolating plate adjacent to the head. | 06-02-2011 |
20110130023 | Connection structure for a vehicle - A connector has a first terminal housing with first connecting terminals aligned and accommodated therein, a second terminal housing with second connecting terminals aligned and accommodated therein, isolating plates and a connecting member. Each of the first connecting terminals and each of the second connecting terminals are surface-roughened such that a surface facing to other connecting terminal and composing a contact with the other connecting terminal provides a first frictional coefficient. When each of the isolating plates is adjacent to each of the first connecting terminals, each of the isolating plates is integrally fixed to each of the first connecting terminals, and when each of the isolating plates is adjacent to each of the second connecting terminals, each surface of the isolating plates facing to each of the second connecting terminals is surface-roughened to provide a second frictional coefficient. | 06-02-2011 |
20110130028 | CONNECTION STRUCTURE - A connection structure includes a first terminal housing with first connecting terminals, a second terminal housing with second connecting terminals, isolating plates in the first terminal housing, a connecting member to collectively fix the first connecting terminals and the second connecting terminals at the contacts therebetween for electrical connections between the first connecting terminals and the second connecting terminals. The connection structure is adapted to heat generated at the contacts through the connecting member, the first terminal housing and/or the second terminal housing to an outside of the first terminal housing. | 06-02-2011 |
20110151707 | A CONNECTOR WITH A CONNECTING MEMBER WITH A SCREW PORTION PENETRATING THE INSULATORS AND TERMINALS OF TWO MATING TERMINAL HOUSINGS - A connector includes a first terminal housing with a plurality of first connecting terminals aligned and accommodated therein, a second terminal housing with a plurality of second connecting terminals aligned and accommodated therein, a plurality of insulation members aligned and accommodated in the first terminal housing, a connecting member including a head and a shaft connected to the head. The shaft and/or the head includes a first screw part to screw the connecting member into the first terminal housing and/or the second terminal housing. The shaft includes a second screw part to screw into an insulation member of the plurality of the insulation members at a forward end in an insertion direction of the connecting member. The second screw part includes a screw pitch greater than the first screw part. | 06-23-2011 |
20110159717 | CONNECTION STRUCTURE - A connection structure includes a first terminal housing with a plurality of first connecting terminals aligned and accommodated therein, a second terminal housing with a plurality of second connecting terminals aligned and accommodated therein, a plurality of insulation members aligned and accommodated in the first terminal housing, two connecting members disposed to sandwich a stack structure of the plurality of the first connecting terminals, the plurality of the second connecting terminals and the plurality of the insulation members at a top end and a bottom end of the stack structure, and a synchronizing member to allow the two connecting members to press synchronously the adjacent insulation member. | 06-30-2011 |
20110159728 | Wire harness and method of manufacturing the same - A wire harness includes a plurality of cables arranged in parallel, and a connector including a housing to which end portions of the plurality of cables are connected. Air-tightness between an air-tight block and the cables is maintained by inserting a melting member into cable insertion holes through a first insertion part, vibrating the melting member and pressing the melting member against a first press receiving part formed at an inner wall surface of the cable insertion holes such that a front end portion of the melting member in contact with the first press receiving part is melted into a melt resin to allow the melt resin to be poured into a gap between the cables and the air-tight block and a periphery of the cables to be covered with the melt resin. | 06-30-2011 |
20110159729 | Wire harness and method of manufacturing the same - A wire harness includes a plurality of cables arranged in parallel, and a connector including a housing to which end portions of the plurality of cables are connected. An air-tight block includes two closing parts, an insertion part, a press receiving part, and an air escape opening part that opens from a cable insertion hole between the closing parts toward an outside of the air-tight block. Air-tightness between the air-tight block and the cables is maintained by a first step that a melting member is vibrated and pressed to the press receiving part to have a melt resin, which is poured into a gap between the closing parts, and a periphery of the cables is covered with the melt resin, a second step that the air escape opening part is closed, and a third step that the cables are pressed by the melt resin poured into the gap. | 06-30-2011 |
20110159731 | Wire harness and method of manufacturing the same - A wire harness includes a plurality of cables arranged in parallel and a connector comprising a housing to which end portions of the plurality of cables are connected. The housing has an air-tight block at a side thereof that the plurality of cables are connected. The air-tight block further includes two closing parts for closing a space between the air-tight block and the cables at two places along a longitudinal direction of the cables, and for defining a part of a cable insertion hole. A metallic member protruding outwardly in a radial direction of the cables is fixed by swaging to a periphery of each of the cables between both of two closing parts for restricting a movement of the cables along the longitudinal direction in a pulling force or pressing force of the cables. | 06-30-2011 |
20110189883 | CONNECTOR - A connector includes a male terminal housing with a plurality of first connecting terminals aligned and accommodated therein, a female terminal housing with a plurality of second connecting terminals aligned and accommodated therein, a plurality of isolating plates aligned and accommodated in the male terminal housing, a connecting member, and a lever mechanism including a lever to rotate a head of the connecting member so as to press the head of the connecting member against the adjacent one of the plurality of insulation plates. The lever mechanism further includes an operation permitting means that permits the connecting member to collectively fix the plurality of first connecting terminals and the plurality of second connecting terminals at the contacts, when the male terminal housing and the female terminal housing are in a predetermined fitting state. | 08-04-2011 |
20110189891 | CONNECTOR - A connector includes a metallic male terminal housing with a plurality of first joining terminals aligned and accommodated therein, a female terminal housing with a plurality of second joining terminals aligned and accommodated therein, a stacked structure that when the male terminal housing is mated into the female terminal housing, within the male terminal housing, the plural first joining terminals an the plural second joining terminals face each other to form pairs, respectively, at one surface thereof, and the first joining terminals and the second joining terminals are disposed alternately, and an electricity screening plate disposed between the stacked structure and the male terminal housing to cover a side surface of the stacked structure facing the male terminal housing. | 08-04-2011 |
20110250770 | LEVER CONNECTOR - A lever connector includes a first connector portion including a first terminal housing with a plurality of first connecting terminals, a second connector portion including a second terminal housing with a plurality of second connecting terminals, a plurality of isolating plates, a connecting member to fix the first and second connecting terminals at the contacts therebetween, and a lever structure including a turn lever provided to hold both sides of either one of the first or second terminal housing. The lever structure includes a housing attaching/detaching mechanism for turning the turn lever to pull and mate the first and second terminal housings together, or pull the first and second terminal housings apart to release the mating, and a connecting member manipulating mechanism for turning the turn lever to manipulate the connecting member to apply a pressing force to each of the contacts or release the applying of that pressing force. | 10-13-2011 |
20110250771 | LEVER CONNECTOR - A lever connector includes a first connector portion including a first terminal housing with a plurality of first connecting terminals, a second connector portion including a second terminal housing with a plurality of second connecting terminals, a plurality of isolating plates, a connecting member to fix the first and second connecting terminals at the contacts therebetween, and a lever structure including a turn lever provided to hold both sides of either one of the first or second terminal housing. The lever structure includes a connecting member manipulating mechanism for turning the turn lever to manipulate the connecting member to apply a pressing force to each of the contacts or release the applying of that pressing force. The connecting member manipulating mechanism includes a contact holding means for maintaining the electrical connections between the first and second connecting terminals, respectively, even in the event of the absence of the turn lever. | 10-13-2011 |
20110250801 | CONNECTOR - A connector includes a first terminal housing for housing a plurality of aligned first connecting terminals, a second terminal housing for housing a plurality of aligned second connecting terminals, and a connecting member for collectively fixing and electrically connecting the plurality of first connecting terminals and the plurality of second connecting terminals. The insulator includes a first insulating member that is one of two divided insulators formed by dividing the insulator, and a second insulating member that is another of the divided insulators. The two divided insulators overlap when the first terminal housing is fitted to the second terminal housing, thereby forming the insulator having a predetermined thickness. A fitting groove is formed on a facing surface of one of the first and second insulating members, and a convex portion fitting to the fitting groove is formed on a facing surface of the other. | 10-13-2011 |
20120077360 | Connector - A connector includes a first terminal housing with a plurality of first joining terminals aligned and accommodated therein, a second terminal housing with a plurality of second joining terminals aligned and accommodated therein, a connecting member for pressing and thereby collectively fixing the plural first joining terminals and the plural second joining terminals at the contacts therebetween respectively, and a covering member slidably provided to cover the connecting member, to maintain the pressing force of the pressed connecting member at a specified or greater pressing force that assures the stable connections between the first joining terminals and the second joining terminals, respectively, the covering member being provided in such a manner that it is not slidable to cover the connecting member until the pressing force of the connecting member reaches the pressing force that assures the stable connections between the first joining terminals and the second joining terminals, respectively. | 03-29-2012 |
20120156916 | CONNECTOR - A connector includes a first terminal housing for housing a plurality of first connecting terminals aligned, a second terminal housing for housing a plurality of second connecting terminals aligned, a plurality of insulating members that are aligned and housed in the first terminal housing, a connecting member for collectively fixing and electrically connecting the plurality of first connecting terminals and the plurality of second connecting terminals at each contact point by pressing one of the plurality of insulating members adjacent to the connecting member, and an insulating member assembly including the plurality of insulating members assembled such that the plurality of insulating members are each restricted from moving in a fitting direction thereof, and moving in a width direction perpendicular to a lamination direction of the laminated structure and to the fitting direction. | 06-21-2012 |
20120184123 | CONNECTOR - A connector includes a first terminal housing for housing a plurality of first connecting terminals aligned, a second terminal housing for housing a plurality of second connecting terminals aligned, a plurality of insulating members aligned and housed in the first or second terminal housing, and a plurality of device side connecting terminals each integrated with the plurality of first connecting terminals at a base end side of the plurality of first connecting terminals, and electrically connected to a device to which the first terminal housing is attached. The plurality of device side connecting terminals are each plate-shaped and each include a surface parallel to a lamination direction of the laminated structure and to a fitting direction of the first and second terminal housings. The first terminal housing includes a terminal block for holding the plurality of device side connecting terminals to be aligned in the lamination direction. | 07-19-2012 |
20120184125 | CONNECTOR - A connector includes a first terminal housing for housing plural first connecting terminals aligned, a second terminal housing for housing plural second connecting terminals aligned, plural insulating members, a connecting member for collectively fixing and electrically connecting the plural first connecting terminals and the plural second connecting terminals at each contact point by pressing the plural first connecting terminals and the plural second connecting terminals. The connecting member includes a ring-shaped support fixed to the first terminal housing and a pressing portion an upper part of which is inserted into a hollow formed inside the ring-shaped support so as to be pivotally supported by the support. The pressing portion is configured to turn relative to the support by turning the upper part of the pressing portion and to move relative to the support with the turning of the pressing portion in a vertical direction. | 07-19-2012 |
20120184149 | Connector - A connector includes a first terminal housing for housing three first connecting terminals aligned, a second terminal housing for housing three second connecting terminals aligned, a plurality of insulating members that are aligned and housed in the second terminal housing, and a connecting member for collectively fixing and electrically connecting the three first connecting terminals and the three second connecting terminals at each contact point by pressing one of the plurality of insulating members adjacent to the connecting member. The three first connecting terminals and the three second connecting terminals are each arranged in a form of a triangle when viewed in the fitting direction. | 07-19-2012 |
20120184152 | CONNECTOR - A connector includes a first terminal housing for housing a plurality of first connecting terminals aligned, a second terminal housing for housing a plurality of second connecting terminals aligned, a plurality of insulating members aligned and housed in the first or second terminal housing, and a connecting member for collectively fixing and electrically connecting the plurality of first connecting terminals and the plurality of second connecting terminals at each contact point by pressing the plurality of first connecting terminals and the plurality of second connecting terminals. The connecting member includes a ring-shaped support fixed to the first terminal housing, a rotating portion an upper portion of which is inserted into a hollow formed inside the ring-shaped support so as to be pivotally supported by the support, and a pressing portion to move in a vertical direction relative to the rotating portion by turning the rotating portion. | 07-19-2012 |
20120244755 | CONNECTOR - A connector includes a first terminal housing for housing a plurality of first connecting terminals aligned, a second terminal housing for housing a plurality of second connecting terminals aligned, a plurality of insulating members aligned and housed in the second terminal housing, a resin molded body provided in the second terminal housing, and an insulating member assembly formed by assembling the plurality of insulating members. The resin molded body includes at least one pair of restricting protrusions in order to restrict expanding movement of the insulating member assembly in the lamination direction when inserting the first connecting terminals into a gap between the second connecting terminals and the insulating members. The insulating member assembly includes a terminal protecting member to interfere with a rim of the first terminal housing to prevent the first terminal housing from being erroneously inserted into the gap. | 09-27-2012 |
20120322319 | CONNECTOR SYSTEM - A connector system includes a plurality of first connecting terminals, a plurality of second connecting terminals, a first housing, a second housing, a plurality of insulating members, a laminated structure formed by the plurality of first and second connecting terminals and the plurality of insulating members, a pressing mechanism including a rotary member rotatably supported on the first housing and configured to generate a pressing force to press the laminated structure in a lamination direction thereof, a rotation inhibiting mechanism configured to inhibit a rotation of the rotary member in a direction of generating the pressing force when the first housing is not fitted to the second housing, and a rotation-inhibition release mechanism configured to release the inhibition of the rotation of the rotary member by the rotation inhibiting mechanism so as to allow the rotation of the rotary member when the first housing is fitted to the second housing. | 12-20-2012 |
20120324726 | METHOD OF MANUFACTURING WIRE HARNESS - A method of manufacturing a wire harness including a plurality of wires and a connector with a housing. The method includes arranging the plurality of wires in an insertion hole of an airtight block of the housing to have a gap between the plurality of wires and an inner surface of the insertion hole, supplying a molten resin having a fluidity into the gap through a flow channel in communication with the gap, and solidifying the molten resin inside the space to resin-seal the gap between the insertion hole and the plurality of wires. The supplying of the molten resin is conducted such that a tool for melting a solid resin member is attached to the airtight block, the resin member is melted by applying an ultrasonic vibration while being pressed against the tool, and the molten resin obtained by the melting is poured into the flow channel. | 12-27-2012 |
20120329337 | WIRE HARNESS AND METHOD OF MANUFACTURING THE SAME - A wire harness includes a plurality of wires, and a connector including a housing for holding end portions of the plurality of wires. The housing includes an airtight block that includes a resin, an insertion hole formed thereon for inserting the plurality of wires, a flow channel in communication with the insertion hole to flow a molten resin therethrough for resin-sealing a gap between the insertion hole and the plurality of wires, and a melting section to be the molten resin being integrally formed with the flow channel. The gap between the insertion hole and the plurality of wires is resin-sealed such that an ultrasonic vibrator relatively moving with respect to the airtight block is brought into contact with the melting section, and the molten resin melted from the melting section by heat generated by vibration of the ultrasonic vibrator is poured into the gap. | 12-27-2012 |
20140291017 | CONNECTOR AND WIRE HARNESS - A connector includes a first terminal housing for housing first connecting terminals, a second terminal housing for housing second connecting terminals, insulating members aligned and housed in the second terminal housing, a connecting member for rotating a cam in a tightening direction and thereby pressing each contact point, a first fitting detection terminal provided on one of the first and second terminal housings, a second fitting detection terminal provided on the other of the first and second terminal housings so as to be slidable along a fitting direction of the two terminal housings, and a slide means that makes the second fitting detection terminal slide in accordance with the rotation of the cam and electrically connects the first fitting detection terminal to the second fitting detection terminal when fitting the two terminals housings and then rotating the cam in the tightening direction. | 10-02-2014 |
Patent application number | Description | Published |
20110274933 | LAMINATE, METHOD FOR PRODUCING SAME, ELECTRONIC DEVICE MEMBER, AND ELECTRONIC DEVICE - A laminate comprises a gas barrier layer and an inorganic compound layer, the gas barrier layer being formed of a material that includes at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer having an oxygen atom content rate that gradually decreases from the surface of the gas barrier layer in the depth direction, and having a carbon atom content rate that gradually increases from the surface of the gas barrier layer in the depth direction. An electronic device member includes the laminate, and an electronic device includes the electronic device member. The laminate exhibits an excellent gas barrier capability and excellent transparency, and does not produce cracks (i.e., the gas barrier capability does not deteriorate) even when the laminate is folded. The laminate exhibits an excellent gas barrier capability and an excellent impact-absorbing capability even if an impact is applied from the outside. | 11-10-2011 |
20120041116 | FORMED ARTICLE, METHOD FOR PRODUCING SAME, ELECTRONIC DEVICE MEMBER, AND ELECTRONIC DEVICE - Disclosed is a formed article comprising an ion-implanted layer obtained by implanting ions of a silicon compound into a polymer layer. Also disclosed are: a method of producing the formed article, the method comprising implanting ions of a silicon compound into a surface of a polymer layer of a formed body that includes the polymer layer in its surface; an electronic device member comprising the formed article; an electronic device comprising the electronic device member. Consequently, the present invention provides: a formed article which has excellent gas barrier capability, bendability and surface flatness; a method of producing the formed article, an electronic device member comprising the formed article; an electronic device comprising the electronic device member. | 02-16-2012 |
20120059147 | METHOD FOR SITE-SELECTIVELY CLEAVING TARGET NUCLEIC ACID - There is provided a method for cleaving a target nucleic acid at a desired site using a metal ion or a metal ion complex as a catalyst for cleaving a nucleic acid (DNA, etc.), which has high site-selectivity, high reaction efficiency and low side-reactivity (non-specific reactivity), and is economical and convenient. The method for cleaving a target nucleic acid of the present invention comprises allowing a target nucleic acid to come into contact with a specific complex compound and a metal ion or a metal complex, or allowing a target nucleic acid to come into contact with a specific complex compound, to which a metal ion or a metal complex binds. | 03-08-2012 |
20120064321 | FORMED ARTICLE, METHOD FOR PRODUCING THE FORMED ARTICLE, MEMBER FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE - A formed article includes a gas barrier layer that is formed of a material including at least an oxygen atom and a silicon atom, a surface area of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on the total content of oxygen atoms, nitrogen atoms, and silicon atoms, and having a film density of 2.4 to 4.0 g/cm | 03-15-2012 |
20120088880 | Formed Article, Method for Producing Same, Electronic Device Member, and Electronic Device - Disclosed is a formed article comprising a layer obtained by implanting ions of a hydrocarbon compound into a polyorganosiloxane compound-containing layer. Also disclosed are: a method of producing the formed article, the method comprising implanting ions of a hydrocarbon compound into a surface of a polyorganosiloxane compound-containing layer of a formed body that includes the polyorganosiloxane compound-containing layer in its surface; an electronic device member that includes the formed article; and an electronic device that includes the electronic device member. The present invention provides; a formed article which exhibits an excellent gas barrier capability, transparency, bendability, antistatic performance, and surface flatness; a method of producing the formed article, an electronic device member, and an electronic device. | 04-12-2012 |
20120101221 | FORMED ARTICLE, METHOD OF PRODUCING SAME, ELECTRONIC DEVICE MEMBER, AND ELECTRONIC DEVICE - A formed article comprising a gas barrier layer that is formed of a material including at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer including an area (A) where an oxygen atom content rate gradually decreases, and a carbon atom content rate gradually increases in a depth direction from a surface, the area (A) including a partial area (A | 04-26-2012 |
20120108761 | FORMED ARTICLE, METHOD OF PRODUCING SAME, ELECTRONIC DEVICE MEMBER, AND ELECTRONIC DEVICE - A formed article comprising a layer obtained by implanting ions into a polycarbosilane compound-containing layer, a method of producing the formed article, an electronic device member, and an electronic device comprising the electronic device member. The formed article has an excellent gas barrier capability, excellent transparency, excellent bendability, excellent adhesion, and excellent surface flatness. | 05-03-2012 |
20120295120 | TRANSPARENT CONDUCTIVE FILM, PROCESS FOR PRODUCING SAME, AND ELECTRONIC DEVICE EMPLOYING TRANSPARENT CONDUCTIVE FILM - Disclosed is a transparent conductive film, including a substrate and, formed on at least one surface of the substrate, a gas barrier layer and a transparent conductive layer, wherein the gas barrier layer is formed of a material containing at least oxygen atoms, nitrogen atoms, and silicon atoms, and includes a surface layer part which has an oxygen atom fraction of 60 to 75%, a nitrogen atom fraction of 0 to 10%, and a silicon atom fraction of 25 to 35%, each atom fraction being calculated with respect to the total number of the oxygen atoms, nitrogen atoms, and silicon atoms contained in the surface layer part and which has a film density of 2.4 to 4.0 g/cm | 11-22-2012 |
20120301710 | TRANSPARENT CONDUCTIVE FILM, PROCESS FOR PRODUCING SAME, AND ELECTRONIC DEVICE EMPLOYING TRANSPARENT CONDUCTIVE FILM - A transparent conductive film which exhibits excellent gas barrier performance and electrical conductivity, and exhibits low sheet resistivity and high electrical conductivity, even after having been placed in moist and high-temperature conditions. The conductive film is in the form of a zinc oxide-based electrically conductive stacked structure, and the film includes a substrate and, formed on at least one surface of the substrate, (A) a gas barrier layer and (B) a transparent conductive layer formed of a zinc oxide-based conductive material, wherein the gas barrier layer is formed of a material containing at least oxygen atoms, carbon atoms, and silicon atoms, and includes a region in which the oxygen atom concentration gradually decreases and the carbon atom concentration gradually increases from the surface in the depth direction of the layer. | 11-29-2012 |
20130202900 | FORMED BODY, PRODUCTION METHOD THEREOF, ELECTRONIC DEVICE MEMBER AND ELECTRONIC DEVICE - The present invention is a formed article sequentially comprising a base layer, a primer layer that includes a hydroxyl group-containing polymer, and a gas barrier layer, the gas barrier layer being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm | 08-08-2013 |
20130209800 | ADHESIVE SHEET AND ELECTRONIC DEVICE - The invention pertains to an adhesive sheet including a base material having thereon at least a gas barrier layer and an adhesive layer, wherein the gas barrier layer is constituted of a material containing at least an oxygen atom and a silicon atom; in a surface layer part of the gas barrier layer, an existing proportion of an oxygen atom is from 60 to 75%, an existing proportion of a nitrogen atom is from 0 to 10%, and an existing proportion of a silicon atom is from 25 to 35% relative to a total existing amount of the oxygen atom, the nitrogen atom, and the silicon atom; and a film density in the surface layer part of the gas barrier layer is from 2.4 to 4.0 g/cm | 08-15-2013 |
20140199544 | MODIFIED POLYSILAZANE FILM AND METHOD FOR PRODUCING GAS BARRIER FILM - Provided are a modified polysilazane film that is preferable as an intermediate material for forming a predetermined gas barrier film, and a method for producing a gas barrier film having excellent gas barrier properties using such modified polysilazane film as an intermediate material. | 07-17-2014 |
20140342149 | GAS BARRIER FILM AND METHOD FOR PRODUCING GAS BARRIER FILM - A gas barrier film having excellent gas barrier properties, and a method for producing such a gas barrier film are provided. | 11-20-2014 |
Patent application number | Description | Published |
20100140864 | IMAGE FORMING APPARATUS CAPABLE OF DETECTING EDGE PORTION OF SHEET BEING FED - A sheet detection unit of an image forming apparatus includes a light receiving unit including a plurality of light receiving elements arranged in a sheet feeding direction. A computation processing unit shifts signals from the elements in synchronization with a sheet feeding speed and makes additions, increases a signal change level, and stores the signals in buffers in a result storage unit. A sheet position determination unit detects a position of an edge portion of a sheet being fed based on distribution of data stored in the buffers. | 06-10-2010 |
20100148431 | SHEET FEEDING DEVICE AND IMAGE FORMING APPARATUS PROVIDED WITH THE SHEET FEEDING DEVICE - A sheet feeding device that is suited to be employed in an image forming apparatus having a printing section for printing an image on a sheet. The sheet feeding device has feed rollers for feeding a sheet at a speed “Va” and timing rollers for feeding a sheet fed by the feed rollers to the printing section at a speed “Vb”. Sensors are provided between the feed rollers and the timing rollers, so that the gap between a foregoing sheet and a following sheet can be detected at a plurality of detection points while the foregoing sheet is being fed by the timing rollers and the following sheet is being fed by the feed rollers. When one of the sensors detects that there is a gap between the sheets, a control unit controls the feed rollers such that the speed “Va” will be higher than the speed “Vb”. | 06-17-2010 |
20110229235 | IMAGE FORMING APPARATUS HAVING STEPPING MOTOR ARRANGED IN CONVEYING PATH FOR PAPER, AND METHOD FOR CONTROLLING STEPPING MOTOR IN IMAGE FORMING APPARATUS - An image forming apparatus includes: a stepping motor arranged in a conveying path for a paper; a driver for driving the stepping motor; a current detecting unit for detecting an actual current value; and a control unit for providing a set current value for every predetermined cycle. The control unit determines an estimated load torque value corresponding to the set current value in a previous cycle and the actual current value in a present cycle, by referring to a relationship between actual current and load torque of the stepping motor with respect to the set current value, determines a target load torque value based on the estimated load torque value, and determines, as the set current value, a current value corresponding to the target load torque value, by referring to a relationship between maximum output torque of the stepping motor and current supplied to the stepping motor. | 09-22-2011 |
20110230977 | CONTROL APPARATUS AND IMAGE FORMING APPARATUS - A control device for generating a second trigger with a delay of a predetermined time from generation of a first trigger, said control device having; a counter for counting numbers from 0 to n−1 at a frequency with cycles of a first period; a control section, which operates at a frequency with cycles of a second period that is longer than the first period, for calculating a remainder of a division by adding a number of counts of the counter corresponding to the predetermined time to a count value of the counter at the time of generation of the first trigger and by dividing a result of the addition by n; and an output section for outputting the second trigger at a time when the count value of the counter becomes equal to the remainder. | 09-22-2011 |
20120237278 | SHEET CONVEYING DEVICE THAT CAN CHANGE SHEET CONVEYING DIRECTION - A sheet conveying device includes: a roller that conveys a sheet; a leading end retaining member that temporarily retaining a front portion in a conveying direction of the sheet conveyed by the roller; a moving unit that moves a rear portion of the sheet toward a direction intersecting the conveying direction using a pushing member while the sheet is retained by the leading end retaining member, the pushing member being located on a downstream side of the roller; and an inverting and conveying roller that, after the moving unit moves the sheet, conveys the sheet while the rear portion of the sheet is set to a head. | 09-20-2012 |
20120293097 | IMAGE FORMING APPARATUS INCLUDING MOTOR THAT DRIVES IMAGE FORMING APPARATUS, CONTROLLER THAT CONTROLS MOTOR, AND SENSOR - An image forming apparatus includes a longitudinally conveying motor, a main-body-side control board, and a sensor. In the longitudinally conveying motor, an encoder generates an encoder signal having a frequency corresponding to the number of rotations of the longitudinally conveying motor, and a sensor signal superimposing unit receives an input of a logical state of the sensor. The sensor signal superimposing unit superimposes the logical state of the sensor on the encoder signal by modulating a duty ratio of the encoder signal based on the logical state of the sensor, and outputs a post-superimposition encoder signal. In the main-body-side control board, a sensor signal separating unit obtains the logical state of the sensor by demodulating the input encoder signal. | 11-22-2012 |
20130279960 | IMAGE FORMING APPARATUS - An image forming apparatus includes: a conveyance roller configured to convey recording sheets; a brush motor configured to drive the conveyance roller to rotate; and a control unit configured to control a rotational speed of the brush motor, wherein while the conveyance roller conveys a recording sheet, (i) the control unit applies voltage to an outer circumferential surface of a commutator of the brush motor to drive the brush motor to rotate by a predetermined rotation amount, so as to perform a cleaning operation to remove a film deposited on the outer circumferential surface, and (ii) the control unit reduces the rotational speed of the brush motor while not performing the cleaning operation, so as to correct a conveyance distance of the recording sheet. | 10-24-2013 |
20140205340 | IMAGE PROCESSING APPARATUS, ROTATION CONTROL METHOD FOR MOTOR, AND COMPUTER-READABLE RECORDING MEDIUM - An image processing apparatus includes: a transport roller for transporting a sheet subjected to image processing; a motor that drives the transport roller to rotate; and a speed reduction unit that performs a speed reduction control on the motor to temporarily stop the sheet, the speed reduction control being performed in a manner that a stopping time and a stopping distance each satisfy a corresponding target range, wherein the speed reduction control includes: a first control that is a control of reducing a rotation speed of the motor to a reference speed through at least two operations from among a braking operation, a powering operation, and a free running operation; and a second control that is a control of, after a rotation amount of the motor from the start of the speed reduction control reaches a reference value, continuously performing the braking operation until the stop of the motor. | 07-24-2014 |
20150028533 | SHEET FEEDER, DOCUMENT READER, AND IMAGE FORMING APPARATUS - A sheet feeder picking up and transporting sheets includes a transport unit transporting sheets along a sheet transport path one by one, a gap occurrence detection unit detecting, within a predetermined section of the sheet transport path, occurrence of a gap between sheets, and a controller controlling a timing of the transport of sheets according to a result of the detection. The gap occurrence detection unit includes a first detection unit and a second detection unit. The first detection unit is configured to detect light that is emitted toward the predetermined section, reaches a converging surface thereof across the predetermined section, and converged on a receiving element thereof. The second detection unit is configured to detect light reflected by a sheet passing through the predetermined section. The occurrence of the gap is detected based on outputs from the first detection unit and the second detection unit. | 01-29-2015 |
Patent application number | Description | Published |
20090040435 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device comprising a light source, a polarizing film and a liquid crystal cell in this order, wherein a first optical compensation film having an in-plane retardation (Re) of 0 to 20 nm and a retardation (Rth) in the thickness direction of −1000 to 20 nm is provided between the light source and the polarizing film. The liquid crystal display device shows an improved utility efficiency of light. | 02-12-2009 |
20090052032 | OPTICAL FILM, POLARIZING PLATE AND LIQUID CRYSTAL DISPLAY - An optical film is provided and includes a transparent polymer film. The optical film has at least an A1 value defined by Re (450)/Re (550) of from 0.10 to 0.95 and A2 value defined by Re (650)/Re (550) of from 1.01 to 1.50. Re (λ) represents the retardation value of the film with respect to light having a wavelength of λ nm; and Rth (λ) is the retardation value in the thickness direction of film with respect to light having a wavelength of λ nm. | 02-26-2009 |
20090091690 | Optical Compensation Film, Polarizing Plate and Liquid Crystal Display Device - The present invention aims to provide an optical compensation film that allows superior phase difference between a first optically anisotropic layer and a second optically anisotropic layer and excellent wavelength dispersibility in terms of front and inclined retardation of liquid crystal layers in liquid crystal cells, a polarizing plate containing the optical compensation film, and a liquid-crystal display device that can display superior images with less color change due to the polarizing plate. | 04-09-2009 |
20100078592 | LIQUID CRYSTAL COMPOSITION, RETARDATION PLATE, LIQUID CRYSTAL DISPLAY DEVICE, AND PROCESS FOR PRODUCING RETARDATION PLATE - A composition comprising at least one liquid crystal compound, and at least one polymer is disclosed. The polymer comprises a constitutional unit represented by a following formula (A) and a constitutional unit derived from a monomer having a fluoroaliphatic group(s): | 04-01-2010 |
20120147300 | OPTICAL FILM, POLARIZING PLATE, SURFACE FILM FOR LIQUID CRYSTAL DISPLAY DEVICE AND IMAGE DISPLAY DEVICE - An optical film includes, in the following order: an optically anisotropic layer; a transparent support; and a hardcoat layer, in-plane retardation of the optical film at a wavelength of 550 nm is from 80 to 200 nm and retardation in a direction of thickness of the optical film at a wavelength of 550 nm is from −70 to 70 nm. | 06-14-2012 |
20120169970 | SURFACE FILM, POLARIZING PLATE AND IMAGE DISPLAY DEVICE - An optical film includes, in the following order: a transparent support; an oriented film; an optically anisotropic layer; and a hardcoat layer, the oriented film is directly contacted with the optically anisotropic layer and the optically anisotropic layer is directly contacted with the hardcoat layer, the optically anisotropic layer is formed from a composition containing a liquid crystalline compound having an unsaturated double bond, the optically anisotropic layer and the hardcoat layer are connected with a covalent bond, and in-plane retardation of the optical film at a wavelength of 550 nm is from 80 to 200 nm and retardation in a direction of thickness of the optical film at a wavelength of 550 nm is from −70 to 70 nm. | 07-05-2012 |
20130093992 | OPTICAL FILM, POLARIZING PLATE AND IMAGE DISPLAY DEVICE - To provide an optical film, which may be used as a λ/4 plate and may provide a display device which has specific optical characteristics, may be manufactured with high productivity and has an excellent 3D-display performance. To provide a 3D-display device having a physical properties having excellent antireflective property and light fastness with high productivity. An optical film having at least one optically anisotropic layer, wherein an in-plane retardation. Re at an arbitrary wavelength in a visible light region is 80 nm to 201 nm, an Nz value represented by the following equation is 0.1 to 0.9, and when the in-plane retardations at wavelengths of 450 nm, 550 nm and 650 nm are referred to as Re450, Re550 and Re650, respectively, Re450/Re550 is 1.18 or less and Re650/Re550 is 0.93 or more. | 04-18-2013 |
20130222910 | OPTICAL FILM, POLARIZING PLATE, AND IMAGE-FORMING DISPLAY DEVICE - An optical film having: a hard coat layer; an optically anisotropic layer; and a transparent support, wherein the optically anisotropic layer contains a liquid crystalline compound and a binder, the hard coat layer, the transparent support, and the optically anisotropic layer are laminated in this order, a surface of the optically anisotropic layer contains a fluorine-containing compound not forming covalent bond with the binder of the optically anisotropic layer, a surface of the optical film on the hard coat layer-formed side contains a fluorine-containing or silicone series compound being fixed by covalent bond, and a topmost surface properties of the optical film on hard coat layer-formed side satisfies the specific conditions. | 08-29-2013 |
20130293824 | METHOD FOR PRODUCING OPTICAL FILM, OPTICAL FILM PRODUCED BY THE METHOD, AND POLARIZING PLATE AND IMAGE-FORMING DISPLAY DEVICE HAVING THE FILM - A method for producing an optical film including: laminating a hard coat layer on one side of an optical substrate in roll form, the hard coat layer having a transparent support and an optical anisotropic layer. The transparent support is laminated on the optical anisotropic layer, the one side is a transparent support-side of the optical substrate, the hard coat layer is obtained by coating, drying and curing a composition for forming a hard coat layer containing a curable monomer, a photo-polymerization initiator, and a solvent. The solvent is a mixture of at least one solvent selected from (S-1) and (S-2) and at least one solvent selected from (S-3), or a mixture of at least one solvent selected from (S-1) and at least one solvent selected from (S-2): (S-1) solvents dissolving the transparent support; (S-2) solvents swelling the transparent support; and (S-3) solvents neither dissolving nor swelling the transparent support. | 11-07-2013 |
Patent application number | Description | Published |
20100194475 | AMPLIFYING CIRCUIT WITH BYPASS CIRCUIT, AND ELECTRONIC DEVICE USING THE SAME - An amplifying circuit with a bypassing function includes an input terminal to which a signal is input from an antenna, an amplifier connected to the input terminal, a first inductor connected between the input port and a ground, and a bypass circuit connected between the input terminal and the output port of the amplifier. The bypass circuit includes a first port connected to the input terminal, a second port connected to the output port of the amplifier, a switch, a capacitor, and a second inductor. The switch is connected in series between the first and second ports. The capacitor is connected in series to the switch between the first and second ports. The second inductor is connected in series to the switch and the capacitor between the first and second ports. The amplifying circuit does not reduce power of a signal drastically even when the signal passes through the bypass circuit, as compared to passing through the amplifier, thus maintaining a profile of a propagation property unchanged and provide preferable transmission quality. | 08-05-2010 |
20110038429 | SIGNAL BRANCHING FILTER, ELECTRONIC DEVICE USING THE SAME, ANTENNA APPARATUS, AND SIGNAL TRANSMISSION SYSTEM USED IN ALL OF THE ABOVE - A signal branching filter according to the invention is a signal branching filter connected to a network having at least four terminals. The signal branching filter includes a first line one end of which is connected to a first terminal of the network, a second line one end of which is connected to a second terminal of the network, a third line one end of which is connected to a third terminal of network, and a fourth line one end of which is connected to a fourth terminal of the network. The other end of the first line and the other end of the second line are connected to each other at a first node, and the other end of the third line and the other end of the fourth line are connected to each other at a second node. When a signal is received from the first node, a phase difference between a phase of a signal appearing on a second node side of the third line and a phase of a signal appearing on a second node side of the fourth line is almost 180°±360°*n is an integer equal to or larger than 0). | 02-17-2011 |
20120113492 | OPTICAL REFLECTION ELEMENT - An optical reflecting element includes a mirror, and a pair of high-frequency vibrators and a pair of low-frequency vibrators for vibrating the mirror. The high-frequency vibrators include a substrate, a bottom electrode layer formed on the substrate, a piezoelectric layer, and a drive electrode and a first monitor electrode as the top electrode layer. One end of the low-frequency vibrator has the substrate shared with the high-frequency vibrator, a bottom electrode layer, a piezoelectric layer, a drive electrode, and a second monitor electrode as the top electrode layer. The other end of the low-frequency vibrator has the substrate shared with the high-frequency vibrator, a bottom electrode layer, a piezoelectric layer, a drive electrode, a first monitor electrode, and an insulator layer as a dead zone for preventing a piezoelectric effect due to the piezoelectric layer from reaching the first monitor electrode. The first monitor electrode provided on the low-frequency vibrator is connected from the top of the vibrator to an extraction electrode. | 05-10-2012 |
20120293850 | OPTICAL SCANNING APPARATUS AND OPTICAL REFLECTION DEVICE USED THEREFOR - An optical scanning apparatus is configured to include a light source that emits a beam of light, and a scanning device that scans the beam of light in two axial directions that are mutually substantially perpendicular at a first frequency f | 11-22-2012 |
20120320439 | OPTICAL REFLECTION ELEMENT - An optical reflection element has a frame, a pair of meandering-shaped vibration elements, a mirror having a reflection surface, and a pair of protective beams. The vibration elements have their respective outer ends supported by confronting portions of an inside of the frame. The vibration elements support the mirror with respective inner ends thereof. The protective beams extend from the respective confronting portions of the inside of the frame toward the mirror with a predetermined space from the vibration elements and in parallel with a vibration axis of the vibration elements. | 12-20-2012 |
20130050791 | OPTICAL REFLECTION ELEMENT - An optical reflection element includes a frame, a meandrous vibrating part having an outer end connected with an inside of the frame, and a mirror part supported by an inner end of the meandrous vibrating part. The meandrous vibrating part has a meandrous shape that includes curved portions and vibrating beams alternately connected with the curved portions. A curvature of respective one of the curved portions is smaller than a curvature of at least one of the curved portions which is located closer to the inner end than the respective one of the curved portions. This optical reflection element has a large deflection angle of the mirror part. | 02-28-2013 |
20130107339 | OPTICAL REFLECTION ELEMENT | 05-02-2013 |
20130271804 | VIBRATING ELEMENT HAVING MEANDERING SHAPE, AND OPTICAL REFLECTION ELEMENT - A vibrating element having a meandering shape includes a vibrating beam and a piezoelectric actuator provided on the vibrating beam. The vibrating beam has a meandering-shape substantially formed into the plurality of continuous turned-down shapes. The vibrating beam includes the plurality of turned-down units and the plurality of coupling units coupled to the turned-down units, and the coupling units and the turned-down units are alternately disposed. The piezoelectric actuator includes a lower electrode provided on the vibrating beam, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film. A non-existence region where the piezoelectric film does not exist is provided in at least one of a neighborhood of a midpoint of an inner circumference of each of the turned-down units and a neighborhood of a curvature changing point in which a curvature of the inner circumference of each of the turned-down shapes changes. | 10-17-2013 |
20140159620 | ACTUATOR DRIVE DEVICE - An actuator drive device is configured to drive an actuator. The actuator drive device includes a storage section for storing a drive condition of the actuator, a processor for calculating and outputting drive signal D(t) based on a drive base signal V(t) calculated based on the drive condition with respect to time t, and a generator for outputting, based on the drive signal D(t) calculated, a driving signal for driving the actuator. The drive base signal V(t) is a sum of a fundamental wave and at least one harmonic wave of the fundamental wave. The processor is operable to determine the coefficient a | 06-12-2014 |
20140368896 | OPTICAL REFLECTING ELEMENT AND ACTUATOR - An optical reflecting device includes a movable plate having a reflecting surface, a first support portion, a first drive part, a first frame, and a monitor part for detecting the rotation of the movable plate. The first support portion is connected to the movable plate. The first drive part is formed in the first support portion and rotates the movable plate about a first axis. The first frame contains the movable plate and the first support portion, and is connected to the first support portion. The monitor part extends from that portion of the outer periphery of the movable plate which is most distant from the first axis. | 12-18-2014 |
20140375898 | SCANNING MIRROR AND SCANNING IMAGE DISPLAY DEVICE - A scanning mirror includes a mirror unit configured to reflect a laser beam, a supporter configured to cause the mirror unit to rotate and oscillate, and an oscillation sensor configured to output a monitor signal indicating oscillation of the mirror unit. A photodetector detects an intensity of the laser beam. When a value of the monitor signal falls out of a predetermined range of a normal operation and a value of the intensity detected by the photodetector fails to decrease, a breaking signal for causing the supporter to oscillate more than a breaking limit angle of the supporter is input. This scanning mirror and an image projection device using this scanning mirror can display an image at sufficient brightness safely. | 12-25-2014 |