Patent application number | Description | Published |
20100059781 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING SAME - In an exemplary embodiment of the invention, a semiconductor light-emitting element includes a first semiconductor layer having a first conduction type, a second semiconductor layer having a second conduction type, an active layer provided between the first and second semiconductor layers. The semiconductor light-emitting element also includes a polarity inversion layer provided on the second semiconductor layer, and a third semiconductor layer provided on the polarity inversion layer. The third semiconductor layer has the second conduction type. The crystal orientations of the first through third semiconductor layers are inverted, with the polarity inversion layer serving as a boundary. The first and third semiconductor layers have uppermost surfaces that are made from polar faces having common constitutional elements. Hexagonal conical protrusions arising from a crystal structure are formed at the outermost surfaces of the first and third semiconductor layers. The first through third semiconductor layers are made from a wurtzite-structure group III nitride semiconductor, and are layered along the C-axis direction of the crystal structure. In another embodiment, the polar faces may be made from nitrogen atoms. The hexagonal conical protrusions may be formed by wet etching. | 03-11-2010 |
20100117115 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT - A method includes steps of: sequentially growing a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type on a growth substrate to form a layered structure; separating the substrate from the layered structure to expose the first layer; performing wet etching on an exposed surface to form defect depressions; forming an insulating layer on the exposed surface; polishing the insulating layer and the first layer to flatten the surface of the first layer; and performing wet etching on the surface of the first layer to form protrusions deriving from a crystal structure. | 05-13-2010 |
20100120237 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES - A growth substrate is removed from a semiconductor film, and a surface of the semiconductor film exposed by removing the growth substrate is flattened. The semiconductor film along device division lines are partially etched by dry etching to form grooves in a lattice that form streets, not reaching the metal support in the semiconductor film. The surface of the semiconductor film at the bottom of the grooves is flattened. The semiconductor film along the device division lines at the bottom of the grooves are further etched by wet etching to expose the metal support at the bottom of the grooves to finish the streets. | 05-13-2010 |
20110062484 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light-emitting device which includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a light emitting layer provided between the first and second semiconductor layers, the device comprises a first electrode formed on the first semiconductor layer; a second electrode formed on the second semiconductor layer; and a light-transmissive electrode covering the second semiconductor layer and the second electrode, wherein contact between the second electrode and the second semiconductor layer is non-ohmic, and the second electrode has a stacked structure including a lower layer and an upper layer whose contact resistance with the light-transmissive electrode is lower than that of the lower layer, part of the second electrode being exposed through an opening formed in the light-transmissive electrode. | 03-17-2011 |
20110095330 | OPTICAL SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR APPARATUS - A method for manufacturing a high quality optical semiconductor device includes: (a) preparing a growth substrate; (b) forming a semiconductor layer on the growth substrate; (c) forming a metal support made of copper on the semiconductor layer by plating; (d) separating the growth substrate from the semiconductor layer to remove the growth substrate; and (e) carrying out a thermal treatment in order to even density distributions of crystal grains and voids in the copper forming the metal support. | 04-28-2011 |
20110104835 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENTS - A method of manufacturing semiconductor light emitting elements with improved yield and emission power uses laser lift-off and comprises the steps of forming a semiconductor grown layer formed of a first semiconductor layer, an active layer, and a second semiconductor layer on a first principal surface of a growth substrate; forming a plurality of junction electrodes apart on the second semiconductor layer and forming guide grooves arranged in a lattice to surround each of the junction electrodes in the second semiconductor layer; joining together a support and the semiconductor grown layer via the junction electrodes; projecting a laser to separate the growth substrate; dividing the semiconductor grown layer into respective element regions for the semiconductor light emitting elements; and cutting the support, thereby separating into the semiconductor light emitting elements. Removed regions include regions where the guide grooves are formed, and side walls of the second semiconductor layer formed by the guide grooves have a beveled shape at intersections of the guide grooves. | 05-05-2011 |
20110156087 | FACE-UP OPTICAL SEMICONDUCTOR DEVICE AND METHOD - A face-up optical semiconductor device can be prepared by forming an n-type GaN layer, an active layer, and a p-type GaN layer on a C-plane sapphire substrate. Parts of the p-type GaN layer and the active layer can be removed, and a transparent electrode can be formed over all or most of the remaining p-type GaN layer. A p-side electrode including a pad portion and auxiliary electrode portions can be formed on the transparent electrode layer. An n-side electrode can be formed on the exposed n-type GaN layer. On regions of the transparent electrode layer where weak light emission regions may be formed, outside independent electrodes can be provided. They can be disposed on concentric circles with the n-side electrode as a center or tangent lines thereof so as to be along the circles or the tangent lines. The outside independent electrodes can diffuse current from the p-side electrode to the n-side electrode flowing through the transparent electrode layer into the short side end portions of the transparent electrode layer, thereby decreasing the weak light emission regions. | 06-30-2011 |
20120146086 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device having an n-electrode and a p-electrode provided on the same surface side of a semiconductor film, wherein current spread in the semiconductor film is promoted, so that the improvements in luminous efficiency and reliability, the emission intensity uniformalization across the surface, and a reduction in the forward voltage, can be achieved. The semiconductor light emitting device includes a semiconductor film including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; the n-electrode formed on an exposed surface of the n-type semiconductor layer exposed by removing parts of the p-type semiconductor layer, of the active layer, and of the n-type semiconductor layer with accessing from the surface side of the p-type semiconductor layer; and the p-electrode. A current guide portion having conductivity higher than that of the n-type semiconductor layer is provided on or in the n-type semiconductor layer over the p-type electrode. | 06-14-2012 |
20130100692 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND VEHICLE LAMP - A semiconductor light emitting device which produces mixed light of a desired emission color by a combination of a semiconductor light emitting element and a wavelength converting layer containing a fluorescent substance, and a vehicle lamp including the semiconductor light emitting device. The wavelength converting layer has different wavelength conversion characteristics respectively at its portion covering an area of relatively high current density at light emission operation of the semiconductor light emitting element and at its portion covering an area of relatively low current density so as to reduce chromaticity difference over the light extraction surface of the mixed light due to non-uniformity of current density in the light emitting layer at light emission operation. | 04-25-2013 |
20140110738 | LIGHT EMITTING ELEMENT - A light emitting element includes a semiconductor structure layer, a reflective electrode layer formed on a part of the semiconductor structure layer, a conductor layer formed on the semiconductor structure layer with the reflective electrode layer embedded therein, and a support substrate that is arranged on the conductor layer and joined to the conductor layer via a junction layer. A high resistance contact surface is provided at an interface between the semiconductor structure layer and the conductor layer. A high resistance portion is arranged in an area opposed via the conductor layer to an area where the high resistance contact surface is provided. The conductor layer is connected to the junction layer in a peripheral area of the conductor layer outside the high resistance portion. | 04-24-2014 |