Patent application number | Description | Published |
20100239863 | Spherical particles having nanometer size, crystalline structure, and good sphericity and method for producing the same - The present invention provides a method for producing nanometer-size spherical particles. The method includes a first step for producing intermediate spherical particles. The intermediate spherical particles include a polycrystalline or single-crystalline region, having a particle size of 1 to 300 μm. The method of the present invention further includes a second step for producing final spherical particles. The second step uses a swirling plasma gas flow having the central axis thereof, the central axis running through an area between an anode and a cathode of a plasma generator. The intermediate spherical particles are discharged along the axis to subject the intermediate spherical particles to a plasma atmosphere of the area to form the final spherical particles. | 09-23-2010 |
20110262762 | FILLING MATERIAL AND FILLING METHOD USING THE SAME - A filling material includes a support base member and a metal layer, the metal layer including a first metal layer and a second metal layer and being disposed on one side of the support base member, the first metal layer being an aggregate of nano metal particles and having a film thickness enabling melting at a temperature lower than a melting point, the second metal layer being an aggregate of metal particles having a lower melting point than the first metal layer. | 10-27-2011 |
20110284912 | ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREFOR - An electronic device includes a semiconductor substrate, an insulating material-filled layer and a vertical conductor. The semiconductor substrate has a vertical hole extending in a thickness direction thereof. The insulating material-filled layer is a ring-shaped layer filled in the vertical hole for covering an inner periphery thereof and includes an organic insulating material or an inorganic insulating material mainly of a glass and a nanocomposite ceramic. The nanocomposite ceramic has a specific resistance of greater than 10 | 11-24-2011 |
20120091481 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting device includes a light-emitting element and a support substrate. The light-emitting element has an insulating layer and first and second vertical conductors passing through the insulating layer. The support substrate has a substrate part and first and second through electrodes and is disposed on the insulating layer. The first through electrode passes through the substrate part with one end connected to an opposing end of the first vertical conductor, while the second through electrode passes through the substrate part with one end connected to an opposing end of the second vertical conductor. The opposing ends of the first and second vertical conductors are projected from a surface of the insulating layer and connected to the ends of the first and second through electrode inside the support substrate. | 04-19-2012 |
20120168206 | SUBSTRATE FOR ELECTRONIC DEVICE AND ELECTRONIC DEVICE - A substrate includes a plurality of through electrodes. The through electrode has a nanocomposite structure including a nm-sized carbon nanotube and is a casting formed by using a via formed in the substrate as a mold. | 07-05-2012 |
20130075930 | SEMICONDUCTOR SUBSTRATE, ELETRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor substrate includes a vertical conductor and an insulating layer. The vertical conductor includes a metal/alloy component of a nanocomposite crystal structure and is filled in a vertical hole formed in the semiconductor substrate along its thickness direction. The insulating layer is formed around the vertical conductor in a ring shape and includes nm-sized silica particles and a nanocrystal or nanoamorphous silica filling up a space between the silica particles to provide a nanocomposite structure along with the silica particles. | 03-28-2013 |
20130136645 | METHOD FOR FORMING FUNCTIONAL PART IN MINUTE SPACE - A method for forming a functional part in a minute space includes the steps of; filling a minute space with a dispersion functional material in which a thermally-meltable functional powder is dispersed in a liquid dispersion medium; evaporating the liquid dispersion medium present in the minute space; and heating the functional powder and hardening it under pressure. | 05-30-2013 |
20130250481 | CONDUCTIVE FINE POWDER, CONDUCTIVE PASTE AND ELECTRONIC COMPONENT - A conductive fine powder includes flat metal/alloy fine particles. The flat metal/alloy fine particles have a nanocomposite structure in which crystalline or non-crystalline nanoparticles are mixed or formed in a matrix. The flat metal/alloy fine particles have a maximum thickness of 50 nm or less and a maximum diameter at least twice the thickness and contain a high-melting-point metal and a low-melting-point metal. | 09-26-2013 |
20130277850 | ELECTRONIC DEVICE - An electronic device includes a substrate and an electronic component. The substrate has a metallization trace. The metallization trace has a metallization layer and a synthetic resin layer. The metallization layer has a high-melting-point metallic component and a low-melting-point metallic component. The high-melting-point metallic component and the low-melting-point metallic component are diffusion bonded together and adhered to a surface of the substrate. The synthetic resin layer is formed simultaneously with the metallization layer to cover a surface of the metallization layer with a thickness in the range of 5 nm to 1000 nm. The electronic component is electrically connected to the metallization layer. | 10-24-2013 |
20140023777 | METHOD FOR PRODUCING WIRING BOARD HAVING THROUGH HOLE OR NON-THROUGH HOLE - There is provided a circuit board including a substrate having a hole. Inside the hole, a metal wiring is formed. The wiring is made of a solder alloy having a melting point of 100 to 600° C., and the metal wiring includes a polycrystalline region of the solder alloy. The metal wiring of the present invention is superior in conductivity. | 01-23-2014 |
20140147578 | INSULATING PASTE, ELECTRONIC DEVICE AND METHOD FOR FORMING INSULATOR - An insulating paste includes insulating particles | 05-29-2014 |
20140204548 | SUBSTRATE WITH BUILT-IN PASSIVE ELEMENT - A substrate with built-in passive element includes passive elements and a substrate. The passive elements include at least one of a capacitor, an inductor, a resistor, a signal transmission element or an optical waveguide element. The capacitor, the inductor, the resistor, the signal transmission element or the optical waveguide element has a functional element filled in a groove-like or hole-like element forming region provided in the substrate along a thickness direction thereof. The functional element has a Si—O bond region obtained by reacting Si particles with an organic Si compound. | 07-24-2014 |
20140290435 | SPHERICAL PARTICLES HAVING NANOMETER SIZE, CRYSTALLINE STRUCTURE, AND GOOD SPHERICITY AND METHOD FOR PRODUCING THE SAME - The present invention provides a method for producing nanometer-size spherical particles. The method includes a first step for producing intermediate spherical particles. The intermediate spherical particles include a polycrystalline or single-crystalline region, having a particle size of 1 to 300 μm. The method of the present invention further includes a second step for producing final spherical particles. The second step uses a swirling plasma gas flow having the central axis thereof, the central axis running through an area between an anode and a cathode of a plasma generator. The intermediate spherical particles are discharged along the axis to subject the intermediate spherical particles to a plasma atmosphere of the area to form the final spherical particles. | 10-02-2014 |
20150035114 | INTEGRATED CIRCUIT DEVICE - An integrated circuit device includes a semiconductor substrate, an active element and a passive element. The active element is made of the semiconductor substrate. The passive element includes a functional element filled in a groove or hole provided in the semiconductor substrate along a thickness direction thereof and is electrically connected to the active element. The functional element has a Si—O bond region obtained by reacting Si particles with an organic Si compound. | 02-05-2015 |
20150041990 | WIRING SUBSTRATE AND MANUFACTURING METHOD THEREFOR - A wiring substrate includes a semiconductor substrate, an insulator and a plurality of columnar conductors. The insulator is made of an insulating material filled in a groove or hole provided in the semiconductor substrate. The plurality of columnar conductors are filled in grooves or holes provided in the insulator. The grooves or holes are arranged at a narrow pitch in a plane of the insulator. The insulating material has a Si—O bond obtained by reacting Si particles with an organic Si compound. | 02-12-2015 |
20150054158 | FUNCTIONAL MATERIAL - A functional material includes at least two kinds of particles selected from the group consisting of first metal composite particles, second metal composite particles and third metal composite particles. The first metal composite particles, the second metal composite particles and the third metal composite particles each contain two or more kinds of metal components. The melting point T1(° C.) of the first metal composite particles, the melting point T2(° C.) of the second metal composite particles and the melting point T3(° C.) of the third metal composite particles satisfy a relationship of T1>T2>T3. | 02-26-2015 |