Patent application number | Description | Published |
20090100389 | Shape-based photolithographic model calibration - A method and apparatus for determining how well a photolithographic model simulates a photolithographic printing process. A test pattern of features is printed on a wafer and the shape of the printed features is compared with the shape of simulated features produced by the model. A cost function is calculated from the comparison that quantifies how well the model simulates the photolithographic printing process. | 04-16-2009 |
20090125869 | CALCULATION SYSTEM FOR INVERSE MASKS - A system for calculating mask data to create a desired layout pattern on a wafer reads all or a portion of a desired layout pattern. Mask data having pixels with transmission values is defined along with corresponding optimal mask data pixel transmission values. An objective function is defined that compares image intensities as would be generated on a wafer with an optimal image intensity at a point corresponding to a pixel. The objective function is minimized to determine the transmission values of the mask pixels that will reproduce the desired layout pattern on a wafer. | 05-14-2009 |
20090271759 | CONTRAST-BASED RESOLUTION ENHANCEMENT FOR PHOTOLITHOGRAPHIC PROCESSING - A contrast-based resolution enhancing technology (RET) determines a distribution of contrast values for edge fragments in a design layout or portion thereof. Resolution enhancement is applied to the edge fragments in a way that increases the number of edge fragments having a contrast value that exceeds a predetermined threshold. | 10-29-2009 |
20100023915 | Calculation System For Inverse Masks - A system for calculating mask data to create a desired layout pattern on a wafer reads all or a portion of a desired layout pattern. Mask data having pixels with transmission values is defined along with corresponding optimal mask data pixel transmission values. An objective function is defined that compares image intensities as would be generated on a wafer with an optimal image intensity at a point corresponding to a pixel. The objective function is minimized to determine the transmission values of the mask pixels that will reproduce the desired layout pattern on a wafer. | 01-28-2010 |
20100039633 | SOURCE OPTIMIZATION FOR IMAGE FIDELITY AND THROUGHPUT - A system and method for optimizing an illumination source to print a desired pattern of features dividing a light source into pixels and determining an optimum intensity for each pixel such that when the pixels are simultaneously illuminated, the error in a printed pattern of features is minimized. In one embodiment, pixel solutions are constrained from solutions that are bright, continuous, and smooth. In another embodiment, the light source optimization and resolution enhancement technique(s) are iteratively performed to minimize errors in a printed pattern of features. | 02-18-2010 |
20100269084 | Visibility and Transport Kernels for Variable Etch Bias Modeling of Optical Lithography - Kernels that model characteristics of the etching portion of an optical lithographic model are provided. In various implementations, a visibility density kernel is provided. The visibility density kernel approximates the area of the simulated substrate that is “visible” to the etchant. With various implementations, a transport kernel is provided. The transport kernel approximates the convective “movement” of etchant. | 10-21-2010 |
20100269086 | Electron Beam Simulation Corner Correction For Optical Lithpography - Methods for approximating simulated contours are provided herein. With some implementations, a function that incorporates a Gaussian proximity kernel to approximate the electron beam exposure effects is used to simulate a printed image. Subsequently, one or more corners of the simulated printed image may be approximated by two or more straight edges. In various implementations, the number of straight edges used to approximate the corner as well as the orientation of the one or more straight edges is determined based upon the characteristics of the corner, such as, the corner having an obtuse angle larger than 135 degrees for example. With various implementations, two straight edges are used to approximate the corner, the orientation of the two straight edges being determined by a first point, a second point, and a shared corner point. | 10-21-2010 |
20110004856 | Inverse Mask Design and Correction for Electronic Design - Various implementations of the invention provide for the generation of “smooth” mask contours by inverse mask transmission derivation and by subsequently “smoothing” the derived mask contours by proximity correction. | 01-06-2011 |
20110047519 | Layout Content Analysis for Source Mask Optimization Acceleration - The invention provides for the acceleration of a source mask optimization process. In some implementations, a layout design is analyzed by a pattern matching process, wherein sections of the layout design having similar patterns are identified and consolidated into pattern groups. Subsequently, sections of the layout design corresponding to the pattern groups may be analyzed to determine their compatibility with the optical lithographic process, and the compatibility of these sections may be classified based upon a “cost function.” With further implementations, the analyzed sections may be classified as printable or difficult to print, depending upon the particular lithographic system. The compatibility of various sections of a layout design may then be utilized to optimize the layout design during a lithographic friendly design process. For example, during the design phase, sections categorized as difficult to print may be flagged for further optimization, processing, or redesign. In further implementations, the difficult-to-print sections may be subjected to a source mask optimization process. Subsequently, the entire layout design may receive a conventional resolution enhancement treatment using the optimized source. | 02-24-2011 |
20110138343 | Pattern Transfer Modeling for Optical Lithographic Processes - Various implementations of the invention provide for the optimization of etch induced pattern transfer across a significant portion of a design. In various implementations, an entire design, that is a “full-chip” may be optimized. With some implementations, the invention may be employed to detect etch hotspots. Further implementations may be employed in either or both a mask data preparation process (“MDP”) or to determine the etch effects of including various patterns in a design. | 06-09-2011 |
20120042291 | Inverse Mask Design and Correction for Electronic Design - Various implementations of the invention provide for the generation of “smooth” mask contours by inverse mask transmission derivation and by subsequently “smoothing” the derived mask contours by proximity correction. | 02-16-2012 |
20130191795 | Layout Design Defect Repair Using Inverse Lithography - Aspects of the invention relate to techniques for repairing layout design defects after layout data have been processed by resolution enhancement techniques. The repair process first determines a re-correction region that includes three portions: core, transition and visible portions. An inverse lithography process is then performed on the core and transition portions of the re-correction region while taking into account effects from the visible portion to generate a modified re-correction region. The transition portion is processed based on distance from boundary between the transition portion and the core portion such that layout features near the boundary between the transition portion and the core portion are adjusted more than layout features farther away from the boundary. | 07-25-2013 |
20130227500 | Calculation System For Inverse Masks - A system for calculating mask data to create a desired layout pattern on a wafer reads all or a portion of a desired layout pattern. Mask data having pixels with transmission values is defined along with corresponding optimal mask data pixel transmission values. An objective function is defined that compares image intensities as would be generated on a wafer with an optimal image intensity at a point corresponding to a pixel. The objective function is minimized to determine the transmission values of the mask pixels that will reproduce the desired layout pattern on a wafer. | 08-29-2013 |
20140053123 | DENSITY-BASED INTEGRATED CIRCUIT DESIGN ADJUSTMENT - The disclosed technology is related to adjusting an integrated circuit design while accounting for a local density of the design. In particular exemplary embodiments, a local density value for a layout design that defines a plurality of geometric shapes is derived. Subsequently, one or more of the geometric shapes are adjusted such that the local density value is preserved. With some implementations, the local density value is preserved if the adjusted local density value is within a threshold amount of the derived local density value. | 02-20-2014 |
20150067628 | Layout Content Analysis For Source Mask Optimization Acceleration - The invention provides for the acceleration of a source mask optimization process. In some implementations, a layout design is analyzed by a pattern matching process, wherein sections of the layout design having similar patterns are identified and consolidated into pattern groups. Subsequently, sections of the layout design corresponding to the pattern groups may be analyzed to determine their compatibility with the optical lithographic process, and the compatibility of these sections may be classified based upon a “cost function.” With further implementations, the analyzed sections may be classified as printable or difficult to print, depending upon the particular lithographic system. The compatibility of various sections of a layout design may then be utilized to optimize the layout design during a lithographic friendly design process. For example, during the design phase, sections categorized as difficult to print may be flagged for further optimization, processing, or redesign. In further implementations, the difficult-to-print sections may be subjected to a source mask optimization process. Subsequently, the entire layout design may receive a conventional resolution enhancement treatment using the optimized source. | 03-05-2015 |