Patent application number | Description | Published |
20110284997 | Chip-Exposed Semiconductor Device and Its Packaging Method - A method of making a chip-exposed semiconductor package comprising the steps of: plating a plurality of electrode on a front face of each chi on a wafer; grinding a backside of the wafer and depositing a back metal then separating each chips; mounting the chips with the plating electrodes adhering onto a front face of a plurality of paddle of a leadframe; adhering a tape on the back metal and encapsulating with a molding compound; removing the tape and sawing through the leadframe and the molding compound to form a plurality of packaged semiconductor devices. | 11-24-2011 |
20110285025 | Wafer Level Chip Scale Package Method Using Clip Array - A method for wafer level chip scale package comprises providing a wafer with semiconductor chips formed thereon, forming a groove alongside each chip, providing a wafer size clip array with a plurality of clip contact areas each extending to a down set connecting bar, connecting the plurality of clip contact areas to a plurality of the electrodes disposed on a top surface of the chips with down set connecting bars disposed inside the grooves, encapsulating top of wafer in molding compound, thinning the bottom portion of the wafer and dicing the thin wafer into single chip packages. The chip has source and gate electrodes on a top surface connected to a first and second clip contact areas extending to a first a second down set connecting bars respectively, with the bottom surfaces of the down set connecting bars substantially coplanar to a drain electrode located at the chip bottom surface. | 11-24-2011 |
20120104580 | SUBSTRATELESS POWER DEVICE PACKAGES - A substrate-less composite power semiconductor device may include a thin substrate and a top metal layer located on a top surface of the substrate. A total thickness of the substrate and the epitaxial layer may be less than 25 microns. Solder bumps are formed on top of the top metal layer and molding compound surrounds the solder bumps and leaves the solder bumps at least partly exposed. | 05-03-2012 |
20120164793 | Power Semiconductor Device Package Method - Preparation methods of forming packaged semiconductor device, specifically for flip-chip vertical power device, are disclosed. In these methods, a vertical semiconductor chip is flip-chip attached to a lead frame and then encapsulated with plastic packing materials. Encapsulated chip is then thinned to a predetermined thickness. Contact terminals connecting the chip with external circuit are formed by etching at least a bottom portion of the lead frame connected. | 06-28-2012 |
20120175706 | Chip-Exposed Semiconductor Device - A method of making a chip-exposed semiconductor package comprising the steps of: plating a plurality of electrode on a front face of each chip on a wafer; grinding a backside of the wafer and depositing a back metal then separating each chips; mounting the chips with the plating electrodes adhering onto a front face of a plurality of paddle of a leadframe; adhering a tape on the back metal and encapsulating with a molding compound; removing the tape and sawing through the leadframe and the molding compound to form a plurality of packaged semiconductor devices. | 07-12-2012 |
20120267787 | Wafer Level Chip Scale Package Method Using Clip Array - A method for wafer level chip scale package comprises providing a wafer with semiconductor chips formed thereon, forming a groove alongside each chip, providing a wafer size clip array with a plurality of clip contact areas each extending to a down set connecting bar, connecting the plurality of clip contact areas to a plurality of the electrodes disposed on a top surface of the chips with down set connecting bars disposed inside the grooves, encapsulating top of wafer in molding compound, thinning the bottom portion of the wafer and dicing the thin wafer into single chip packages. The chip has source and gate electrodes on a top surface connected to a first and second clip contact areas extending to a first a second down set connecting bars respectively, with the bottom surfaces of the down set connecting bars substantially coplanar to a drain electrode located at the chip bottom surface. | 10-25-2012 |
20140242756 | METHOD FOR PREPARING SEMICONDUCTOR DEVICES APPLIED IN FLIP CHIP TECHNOLOGY - A method for preparing semiconductor devices in a flip chip process comprises forming deep grooves surrounding each of the semiconductor chips; depositing a first plastic package material to form a first plastic package layer covering front surface of the semiconductor wafer and filling the deep grooves; depositing a metal layer at back surface of the semiconductor wafer after grinding; grinding an outermost portion of the metal layer thus forming a ring area located at back surface around edge of the semiconductor wafer not covered by the metal layer; cutting the first plastic package layer, the semiconductor wafer, the metal layer and the first plastic package material filled in the deep grooves along a straight line formed by two ends of each of the deep grooves filled with the first plastic package material; and picking up the semiconductor devices and mounting on a substrate without flipping the semiconductor devices. | 08-28-2014 |
20150021780 | THIN POWER DEVICE AND PREPARATION METHOD THEREOF - A thin power device comprises a substrate having a first set of first contact pads at a front surface of the substrate electrically connecting to a second set of second contact pads at a back surface of the substrate, a through opening opened from the front surface and through the substrate exposing a third contact pad at the back surface of the substrate, a semiconductor chip embedded into the through opening with a back metal layer at a back surface of the semiconductor chip attached on the third contact pad, and a plurality of conductive structures electrically connecting electrodes at a front surface of the semiconductor chip with the corresponding first contact pads in the first sets of first contact pads. | 01-22-2015 |
20150056752 | SUBSTRATELESS POWER DEVICE PACKAGES - A substrate-less composite power semiconductor device may be fabricated from a vertical conductive power semiconductor device wafer that includes a top metal layer located on a top surface of the wafer by a) forming solder bumps on top of the top metal layer; b) forming wafer level molding around the solder bumps such that the solder bumps are exposed through a top of the wafer level molding; c) grinding a back side of the device wafer to reduce a total thickness of a semiconductor material portion of the device wafer to a final thickness; and d) forming a back metal on a back surface of the wafer. | 02-26-2015 |