Patent application number | Description | Published |
20110069312 | METROLOGY SYSTEMS AND METHODS - Various metrology systems and methods are provided. | 03-24-2011 |
20110164648 | Alleviation Of Laser-Induced Damage In Optical Materials By Suppression Of Transient Color Centers Formation And Control Of Phonon Population - Laser-induced damage in an optical material can be mitigated by creating conditions at which light absorption is minimized. Specifically, electrons populating defect energy levels of a band gap in an optical material can be promoted to the conduction band—a process commonly referred to as bleaching. Such bleaching can be accomplished using a predetermined wavelength that ensures minimum energy deposition into the material, ideally promoting electron to just inside the conduction band. In some cases phonon (i.e. thermal) excitation can also be used to achieve higher depopulation rates. In one embodiment, a bleaching light beam having a wavelength longer than that of the laser beam can be combined with the laser beam to depopulate the defect energy levels in the band gap. The bleaching light beam can be propagated in the same direction or intersect the laser beam. | 07-07-2011 |
20110228263 | ILLUMINATING A SPECIMEN FOR METROLOGY OR INSPECTION - Illumination subsystems of a metrology or inspection system, metrology systems, inspection systems, and methods for illuminating a specimen for metrology measurements or for inspection are provided. | 09-22-2011 |
20110279819 | ILLUMINATION SUBSYSTEMS OF A METROLOGY SYSTEM, METROLOGY SYSTEMS, AND METHODS FOR ILLUMINATING A SPECIMEN FOR METROLOGY MEASUREMENTS - Illumination subsystems of a metrology system, metrology systems, and methods for illuminating a specimen for metrology measurements are provided. | 11-17-2011 |
20130021602 | Laser With High Quality, Stable Output Beam, And Long Life High Conversion Efficiency Non-Linear Crystal - A mode-locked laser system operable at low temperature can include an annealed, frequency-conversion crystal and a housing to maintain an annealed condition of the crystal during standard operation at the low temperature. In one embodiment, the crystal can have an increased length. First beam shaping optics can be configured to focus a beam from a light source to an elliptical cross section at a beam waist located in or proximate to the crystal. A harmonic separation block can divide an output from the crystal into beams of different frequencies separated in space. In one embodiment, the mode-locked laser system can further include second beam shaping optics configured to convert an elliptical cross section of the desired frequency beam into a beam with a desired aspect ratio, such as a circular cross section. | 01-24-2013 |
20130080984 | PROCESS AWARE METROLOGY - Systems and methods for process aware metrology are provided. | 03-28-2013 |
20130148112 | Electron-Bombarded Charge-Coupled Device And Inspection Systems Using EBCCD Detectors - A focusing EBCCD includes a control device positioned between a photocathode and a CCD. The control device has a plurality of holes therein, wherein the plurality of holes are formed perpendicular to a surface of the photocathode, and wherein a pattern of the plurality of holes is aligned with a pattern of pixels in the CCD. Each hole is surrounded by at least one first electrode, which is formed on a surface of the control device facing the photocathode. The control device may include a plurality of ridges between the holes. The control device may be separated from the photocathode by approximately half a shorter dimension of a CCD pixel or less. A plurality of first electrodes may be provided, wherein each first electrode surrounds a given hole and is separated from the given hole by a gap. | 06-13-2013 |
20130215420 | Method and System for Determining One or More Optical Characteristics of Structure of a Semiconductor Wafer - Determination of one or more optical characteristics of a structure of a semiconductor wafer includes measuring one or more optical signals from one or more structures of a sample, determining a background optical field associated with a reference structure having a selected set of nominal characteristics based on the one or more structures, determining a correction optical field suitable for at least partially correcting the background field, wherein a difference between the measured one or more optical signals and a signal associated with a sum of the correction optical field and the background optical field is below a selected tolerance level, and extracting one or more characteristics associated with the one or more structures utilizing the correction optical field. | 08-22-2013 |
20130229661 | Metrology Systems and Methods - Various metrology systems and methods are provided. One metrology system includes a light source configured to produce a diffraction-limited light beam, an apodizer configured to shape the light beam in the entrance pupil of illumination optics, and optical elements configured to direct the diffraction-limited light beam from the apodizer to an illumination spot on a grating target on a wafer and to collect scattered light from the grating target. The metrology system further includes a field stop and a detector configured to detect the scattered light that passes through the field stop. In addition, the metrology system includes a computer system configured to determine a characteristic of the grating target using output of the detector. | 09-05-2013 |
20130264481 | Back-Illuminated Sensor With Boron Layer - An image sensor for short-wavelength light and charged particles includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system. | 10-10-2013 |
20130282340 | Process Aware Metrology - Systems and methods for process aware metrology are provided. One method includes selecting nominal values and one or more different values of process parameters for one or more process steps used to form the structure on the wafer, simulating one or more characteristics of the structure that would be formed on the wafer using the nominal values, and determining parameterization of the optical model based on how the one or more characteristics of the structure vary between at least two of the nominal values and the one or more different values. | 10-24-2013 |
20140034816 | Photocathode Including Silicon Substrate With Boron Layer - A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects, and a low work-function material layer is then formed over the boron layer to enhance the emission of photoelectrons. The low work-function material includes an alkali metal (e.g., cesium) or an alkali metal oxide. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel sensors and inspection systems. | 02-06-2014 |
20140153596 | Semiconductor Inspection And Metrology System Using Laser Pulse Multiplier - A pulse multiplier includes a beam splitter and one or more mirrors. The beam splitter receives a series of input laser pulses and directs part of the energy of each pulse into a ring cavity. After circulating around the ring cavity, part of the pulse energy leaves the ring cavity through the beam splitter and part of the energy is recirculated. By selecting the ring cavity optical path length, the repetition rate of an output series of laser pulses can be made to be a multiple of the input repetition rate. The relative energies of the output pulses can be controlled by choosing the transmission and reflection coefficients of the beam splitter. This pulse multiplier can inexpensively reduce the peak power per pulse while increasing the number of pulses per second with minimal total power loss. | 06-05-2014 |
20140305367 | Passivation of Nonlinear Optical Crystals - The passivation of a nonlinear optical crystal for use in an inspection tool includes growing a nonlinear optical crystal in the presence of at least one of fluorine, a fluoride ion and a fluoride-containing compound, mechanically preparing the nonlinear optical crystal, performing an annealing process on the nonlinear optical crystal and exposing the nonlinear optical crystal to a hydrogen-containing or deuterium-containing passivating gas. | 10-16-2014 |
20150022805 | Laser With High Quality, Stable Output Beam, And Long Life High Conversion Efficiency Non-Linear Crystal - An optical system for detecting contaminants and defects on a test surface includes an improved laser system for generating a laser beam and optics directing the laser beam along a path onto the test surface, and producing an illuminated spot thereon. A detector and ellipsoidal mirrored surface are also provided with an axis of symmetry about a line perpendicular to the test surface. In one embodiment, an optical system for detecting anomalies of a sample includes the improved laser system for generating first and second beams, first optics for directing the first beam of radiation onto a first spot on the sample, second optics for directing the second beam onto a second spot on the sample, with the first and second paths at different angles of incidence to the sample surface. In another embodiment, a surface inspection apparatus includes an illumination system configured to focus beams at non-normal incidence angles. | 01-22-2015 |
20150036142 | Metrology Systems and Methods - Various metrology systems and methods are provided. One metrology system includes a light source configured to produce a diffraction-limited light beam, an apodizer configured to shape the light beam in the entrance pupil of illumination optics, and optical elements configured to direct the diffraction-limited light beam from the apodizer to an illumination spot on a grating target on a wafer and to collect scattered light from the grating target. The metrology system further includes a field stop and a detector configured to detect the scattered light that passes through the field stop. In addition, the metrology system includes a computer system configured to determine a characteristic of the grating target using output of the detector. | 02-05-2015 |
20150041666 | Multi-Spot Illumination For Improved Detection Sensitivity - Methods and systems for minimizing interference among multiple illumination beams generated from a non-uniform illumination source to provide an effectively uniform illumination profile over the field of view of an inspection system are presented. In some examples, a pulsed beam of light is split into multiple illumination beams such that each of the beams are temporally separated at the surface of the specimen under inspection. In some examples, multiple illumination beams generated from a non-uniform illumination source are projected onto spatially separated areas on the surface of the specimen. A point object of interest illuminated by each area is imaged onto the surface of a time-delay integration (TDI) detector. The images are integrated such that the relative position of the illumination areas along the direction of motion of the point object of interest has no impact on the illumination efficiency distribution over the field of view. | 02-12-2015 |