Patent application number | Description | Published |
20100081725 | FLAVOR COMPOSITION OR FRAGRANCE COMPOSITION, PRODUCT CONTAINING THE FLAVOR COMPOSITION OR FRAGRANCE COMPOSITION, AND NOVEL ESTER COMPOUND - Disclosed is a 2-methyl-2-pentenyl ester represented by the general formula (1) [wherein R represents a hydrogen atom or a hydrocarbon group having 1 to 9 carbon atoms which may have a substituent]. The compound has a new-type, unprecedented aroma and/or flavor, particularly a fruity, greenish or floral aroma and/or flavor. The compound can be added to a flavor or fragrance composition in an amount of 0.001 to 30 wt %. The flavor or fragrance composition can be added to a cosmetic product, a toiletry product, a bath agent, a food, a beverage or a pharmaceutical product in an amount of 0.0001 to 30 wt %. All of the compounds of the general formula (1) are novel, except for those compounds of the general formula (1) wherein R represents a methyl group, an isopropyl group, a phenyl group or a mesityl group. | 04-01-2010 |
20100103561 | STORAGE DEVICE, PROCESSOR OR STORAGE DEVICE, AND COMPUTER PROGRAM PRODUCT - According to one embodiment, a storage device includes: ahead actuator configured to move a head to an arbitrary position on a disk medium; a write/read module configured to write data to or read data from the disk medium using the head; an adjustment region selector configured to divide the disk medium into a plurality of regions in a circumferential direction, write test data to each of the regions, read the test data to measure signal quality of the each of the regions, compare the signal quality of the each of the regions, and select a parameter adjustment region; and a parameter adjustment module configured to adjust a parameter used for the write/read module to write data to and read data from the disk medium to an optimal value using the selected parameter adjustment region. | 04-29-2010 |
Patent application number | Description | Published |
20090032708 | Inspection system by charged particle beam and method of manufacturing devices using the system - An inspection apparatus by an electron beam comprises: an electron-optical device | 02-05-2009 |
20090072139 | Substrate inspection apparatus, substrate inspection method and method of manufacturing semiconductor device - A substrate inspection apparatus includes: an electron beam irradiation device which emits an electron beam and causes the electron beam to irradiate a substrate to be inspected as a primary beam; an electron beam detector which detects at least one of a secondary electron, a reflected electron and a backscattered electron that are generated from the substrate that has been irradiated by the electron beam, and which outputs a signal that forms a one-dimensional or two-dimensional image of a surface of the substrate; a mapping projection optical system which causes imaging of at least one of the secondary electron, the reflected electron and the backscattered electron on the electron beam detector as a secondary beam; and an electromagnetic wave irradiation device which generates an electromagnetic wave and causes the electromagnetic wave to irradiate a location on the surface of the substrate at which the secondary beam is generated. | 03-19-2009 |
20100019149 | MAPPING-PROJECTION-TYPE ELECTRON BEAM APPARATUS FOR INSPECTING SAMPLE BY USING ELECTRONS EMITTED FROM THE SAMPLE - An apparatus capable of detecting defects of a pattern on a sample with high accuracy and reliability and at a high throughput, and a semiconductor manufacturing method using the same are provided. The electron beam apparatus is a mapping-projection-type electron beam apparatus for observing or evaluating a surface of the sample by irradiating the sample with a primary electron beam and forming on a detector an image of reflected electrons emitted from the sample. An electron impact-type detector such as an electron impact-type CCD or an electron impact-type TDI is used as the detector for detecting the reflected electrons. The reflected electrons are selectively detected from an energy difference between the reflected electrons and secondary electrons emitted from the sample. To eliminate charge-up caused on the sample surface by irradiation with the primary electron beam, the surface of the sample is covered with a cover placed above the sample and a gas is supplied to the space above the sample covered with the cover. The gas is brought into contact with the sample surface to reduce charge-up on the sample surface. | 01-28-2010 |
20100096550 | PROJECTION ELECTRON BEAM APPARATUS AND DEFECT INSPECTION SYSTEM USING THE APPARATUS - A sample is evaluated at a high throughput by reducing axial chromatic aberration and increasing the transmittance of secondary electrons. Electron beams emitted from an electron gun | 04-22-2010 |
20120032079 | INSPECTION SYSTEM BY CHARGED PARTICLE BEAM AND METHOD OF MANUFACTURING DEVICES USING THE SYSTEM - An inspection apparatus by an electron beam comprises: an electron-optical device | 02-09-2012 |
20120243770 | PATTERN INSPECTION APPARATUS AND PATTERN INSPECTION METHOD - In accordance with an embodiment, a pattern inspection method includes: applying a light generated from a light source to the same region of a substrate in which an inspection target pattern is formed; guiding, imaging and then detecting a reflected light from the substrate, and acquiring a detection signal for each of a plurality of different wavelengths; and adding the detection signals of the different wavelengths in association with an incident position of an imaging surface to generate added image data including information on a wavelength and signal intensity, judging, by the added image data, whether the inspection target pattern has any defect, and when judging that the inspection target pattern has a defect, detecting the position of the defect in a direction perpendicular to the substrate. | 09-27-2012 |
20140034831 | INSPECTION SYSTEM BY CHARGED PARTICLE BEAM AND METHOD OF MANUFACTURING DEVICES USING THE SYSTEM - An inspection apparatus by an electron beam comprises: an electron-optical device | 02-06-2014 |
20140319346 | INSPECTION SYSTEM BY CHARGED PARTICLE BEAM AND METHOD OF MANUFACTURING DEVICES USING THE SYSTEM - An inspection apparatus by an electron beam comprises: an electron-optical device | 10-30-2014 |
Patent application number | Description | Published |
20120242985 | PATTERN INSPECTION APPARATUS AND PATTERN INSPECTION METHOD - In accordance with an embodiment, a pattern inspection apparatus includes a stage supporting a substrate with a pattern, a light source irradiating the substrate with light, a detection unit, an optical system, a focus position change unit, a control unit, and a determination unit. The detection unit detects reflected light from the substrate. The optical system leads the light from the light source to the substrate and leads the reflected light to the detection unit. The focus position change unit changes a focus position of the light to the substrate in a direction vertical to the surface of the substrate. The control unit associates the movement of the stage with the light irradiation and controls the stage drive unit and the focus position change unit, thereby changing the focus position. The determination unit determines presence/absence of a defect of the pattern based on the signal from the determination unit. | 09-27-2012 |
20120242995 | PATTERN INSPECTION APPARATUS AND PATTERN INSPECTION METHOD - In accordance with an embodiment, a pattern inspection apparatus includes a beam splitter, a polarization controller, a phase controller, a wave front distribution controller, and a detector. The beam splitter generates signal light and reference light from light emitted from a light source. The signal light is reflected light from a pattern on a subject to be inspected. The polarization controller is configured to control the polarization angle and polarization phase of the reference light. The phase controller is configured to control the phase of the reference light. The wave front distribution controller is configured to control a wave front distribution of the reference light. The detector is configured to detect light resulting from interference caused by superposing the signal light and the reference light on each other. | 09-27-2012 |
20130063721 | PATTERN INSPECTION APPARATUS AND METHOD - In one embodiment, a pattern inspection apparatus includes a light source configured to generate light, and a condenser configured to shape the light into a line beam to illuminate a wafer with the line beam. The apparatus further includes a spectrometer configured to disperse the line beam reflected from the wafer. The apparatus further includes a two-dimensional detector configured to detect the line beam dispersed by the spectrometer, and output a signal including spectrum information of the line beam. The apparatus further includes a comparison unit configured to compare the spectrum information obtained from corresponding places of a repetitive pattern on the wafer with each other, and a determination unit configured to determine whether the wafer includes a defect, based on a comparison result of the spectrum information. | 03-14-2013 |
20140061461 | DEFECT INSPECTION APPARATUS, DEFECT INSPECTION METHOD AND NON-TRANSITORY COMPUTER READABLE RECORDING MEDIUM - In accordance with an embodiment, a defect inspection apparatus includes an electron beam applying unit, a detection unit, a signal processing unit, and a control unit. The electron beam applying unit applies an electron beam to a semiconductor substrate on which first to N-th (N is a natural number equal to or more than 2) patterns are periodically provided. The patterns are respectively made of first to N-th materials in descending order of the emission amount of secondary electrons or reflected electrons. The detection unit detects the secondary electrons or reflected electrons from the patterns to output a signal. The signal processing unit processes the signal to form a potential contrast image of the patterns. The control unit acquires a potential contrast signal waveform including N signal waveforms respectively corresponding to the N patterns, analyzes the potential contrast signal waveform to acquire positional information to scan the desired pattern. | 03-06-2014 |