Patent application number | Description | Published |
20090266409 | CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device. | 10-29-2009 |
20100258165 | GLASS COMPOSITIONS USED IN CONDUCTORS FOR PHOTOVOLTAIC CELLS - The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells. | 10-14-2010 |
20100258166 | GLASS COMPOSITIONS USED IN CONDUCTORS FOR PHOTOVOLTAIC CELLS - The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells. | 10-14-2010 |
20100258184 | GLASS COMPOSITIONS USED IN CONDUCTORS FOR PHOTOVOLTAIC CELLS - The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells. | 10-14-2010 |
20110006268 | ELECTROCONDUCTIVE THICK FILM COMPOSITION(S), ELECTRODE(S), AND SEMICONDUCTOR DEVICE(S) FORMED THEREFROM - The present invention is directed to an electroconductive thick film composition comprising: (a) electroconductive metal particles selected from (1) Al, Cu, Au, Ag, Pd and Pt; (2) alloy of Al, Cu, Au, Ag, Pd and Pt; and (3) mixtures thereof; (3) glass frit wherein said glass frit is Pb-free; dispersed in (d) an organic medium, and wherein the average diameter of said electroconductive metal particles is in the range of 0.5-10.0 μm. The present invention is further directed to an electrode formed from the composition as detailed above and a semiconductor device(s) (for example, a solar cell) comprising said electrode. | 01-13-2011 |
20110147677 | GLASS COMPOSITIONS USED IN CONDUCTORS FOR PHOTOVOLTAIC CELLS - The invention relates to zinc-containing glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells. | 06-23-2011 |
20110155240 | METHOD OF MANUFACTURE OF SEMICONDUCTOR DEVICE AND CONDUCTIVE COMPOSITIONS USED THEREIN - The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. | 06-30-2011 |
20120119165 | ELECTROCONDUCTIVE THICK FILM COMPOSITION(S), ELECTRODE(S), AND SEMICONDUCTOR DEVICE(S) FORMED THEREFROM - The present invention is directed to an electroconductive thick film composition comprising: (a) electroconductive metal particles selected from (1) Al, Cu, Au, Ag, Pd and Pt; (2) alloy of Al, Cu, Au, Ag, Pd and Pt; and (3) mixtures thereof; (3) glass frit wherein said glass frit is Pb-free; dispersed in (d) an organic medium, and wherein the average diameter of said electroconductive metal particles is in the range of 0.5-10.0 μm. The present invention is further directed to an electrode formed from the composition as detailed above and a semiconductor device(s) (for example, a solar cell) comprising said electrode. | 05-17-2012 |
20120234383 | CONDUCTIVE METAL PASTE FOR A METAL-WRAP-THROUGH SILICON SOLAR CELL - A conductive metal via paste comprising particulate conductive metal, phosphorus-containing material, glass frit, and an organic vehicle. is particularly useful in providing the metallization of the holes in the silicon wafers of MWT solar cells. The result is a metallic electrically conductive via between the collector lines on the front side and the emitter electrode on the back-side of the solar cell. The paste can also be used to form the collector lines on the front-side of the solar cell and the emitter electrode on the back-side of the solar cell. Also disclosed are metal-wrap-through silicon solar cells comprising the fired conductive metal paste. | 09-20-2012 |
20120234384 | CONDUCTIVE METAL PASTE FOR A METAL-WRAP-THROUGH SILICON SOLAR CELL - A conductive metal via paste comprising particulate conductive metal, a reactant that reacts at temperatures of 600° C. to 900° C. with at least one of the group consisting of Si, SiO | 09-20-2012 |
20120312368 | THICK FILM PASTE CONTAINING BISMUTH-BASED OXIDE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - The present invention is directed to an electroconductive thick film paste composition comprising Ag and a Pb-free bismuth-based oxide both dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. | 12-13-2012 |
20120312369 | THICK FILM PASTE CONTAINING BISMUTH-BASED OXIDE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - The present invention is directed to an electroconductive thick film paste composition comprising Ag and a Pb-free bismuth-based oxide both dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. | 12-13-2012 |
20120312372 | GLASS COMPOSITIONS USED IN CONDUCTORS FOR PHOTOVOLTAIC CELLS - The invention relates to zinc-containing glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells. | 12-13-2012 |
20130037096 | THICK FILM PASTE CONTAINING LEAD-TELLURIUM-LITHIUM-TITANIUM-OXIDE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - The present invention is directed to an electroconductive thick film paste composition comprising electrically conductive Ag, a second electrically conductive metal selected from the group consisting of Ni, Al and mixtures thereof and a lead-tellurium-lithium-titanium-oxide all dispersed in an organic medium. The present invention is further directed to an electrode formed from the thick film paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. | 02-14-2013 |
20130037761 | THICK FILM PASTE CONTAINING LEAD-TELLURIUM-LITHIUM-TITANIUM-OXIDE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - The present invention is directed to an electroconductive thick film paste composition comprising Ag and a lead-tellurium-lithium-titanium-oxide both dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. | 02-14-2013 |
20130068290 | CONDUCTIVE PASTE COMPOSITION AND SEMICONDUCTOR DEVICES MADE THEREFROM - A conductive paste composition contains a source of an electrically conductive metal, a lead-tellurium-based oxide, a discrete oxide of an adhesion promoting element, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the paste composition on a semiconductor substrate (e.g., by screen printing) and firing the paste to remove the organic vehicle and sinter the metal and lead-tellurium-based oxide. | 03-21-2013 |
20130092884 | THICK FILM PASTE CONTAINING BISMUTH-TELLURIUM-OXIDE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - The present invention is directed to an electroconductive thick film paste composition comprising Ag and a Pb-free bismuth-tellurium-oxide both dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The present invention is also directed to the bismuth-tellurium oxide that is a component of thick film pastes. | 04-18-2013 |
20130099178 | THICK FILM SILVER PASTE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - The present invention is directed to an electroconductive silver thick film paste composition comprising Ag, a glass frit and rhodium resinate, Cr | 04-25-2013 |
20130186463 | CONDUCTIVE SILVER PASTE FOR A METAL-WRAP-THROUGH SILICON SOLAR CELL - A conductive silver via paste comprising particulate conductive silver, a lead-tellurium-lithium-titanium-oxide, titanium resinate and an organic vehicle is particularly useful in providing the metallization of the holes in the silicon wafers of MWT solar cells. The result is a metallic electrically conductive via between the collector lines on the front side and the emitter electrode on the back-side of the solar cell. The paste can also be used to form the collector lines on the front-side of the solar cell and the emitter electrode on the back-side of the solar cell. Also disclosed are metal-wrap-through silicon solar cells comprising the fired conductive silver paste. | 07-25-2013 |
20130192670 | ALUMINUM PASTE AND USE THEREOF IN THE PRODUCTION OF PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELLS - An aluminum paste having no or only poor fire-through capability and comprising particulate aluminum, an organic vehicle and at least one glass frit selected from the group consisting of lead-free glass frits containing 0.5 to 15 wt. % SiO | 08-01-2013 |
20130192671 | CONDUCTIVE METAL PASTE AND USE THEREOF - A conductive metal paste having no or only poor fire-through capability and including (a) particulate silver, (b) at least one lead-free glass frit including 0.5 to 15 wt. % SiO | 08-01-2013 |
20130284250 | THICK FILM PASTE CONTAINING BISMUTH-TELLURIUM-OXIDE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - The present invention is directed to an electroconductive thick film paste composition comprising electrically conductive Ag, a second electrically conductive metal selected from the group consisting of Ni, Al and mixtures thereof and a Pb-free bismuth-tellurium-oxide all dispersed in an organic medium. The present invention is further directed to an electrode formed from the thick film paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. | 10-31-2013 |
20130298982 | GLASS COMPOSITION AND ITS USE IN CONDUCTIVE SILVER PASTE - A lead-tellurium-lithium-titanium-oxide glass composition is useful as a component of a conductive silver paste. Especially useful are P-containing and V-containing lead-tellurium-lithium-titanium-oxide glass composition. Conductive silver via paste comprising particulate conductive silver and any of the lead-tellurium-lithium-titanium-oxide glass compositions of the invention can be used in providing the metallization of the holes in the silicon wafers of MWT solar cells. The result is a metallic electrically conductive via between the collector lines on the front side and the emitter electrode on the back-side of the solar cell. The paste can also be used to form the collector lines on the front-side of the solar cell and the emitter electrode on the back-side of the solar cell. | 11-14-2013 |
20140083495 | CONDUCTIVE SILVER PASTE FOR A METAL-WRAP-THROUGH SILICON SOLAR CELL - A conductive silver via paste comprising particulate conductive silver, a vanadium-phosphorus-oxide and an organic vehicle is particularly useful in providing the metallization of the holes in the silicon wafers of MWT solar cells. The result is a metallic electrically conductive via between the collector lines on the front side and the emitter electrode on the back-side of the solar cell. The paste can also be used to form the collector lines on the front-side of the solar cell and the emitter electrode on the back-side of the solar cell. Also disclosed are metal-wrap-through silicon solar cells comprising the fired conductive silver paste. | 03-27-2014 |
20140097390 | THICK FILM SILVER PASTE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - The present invention is directed to an electroconductive silver thick film paste composition comprising Ag particles and a Bi—Cu—B—Zn-based glass frit dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The paste is particularly useful for forming a tabbing electrode. | 04-10-2014 |
20140216540 | CONDUCTIVE SILVER PASTE FOR A METAL-WRAP-THROUGH SILICON SOLAR CELL - A conductive silver via paste comprising particulate conductive silver, a vanadium-phosphorus-antimony-zinc-based-oxide, a tellurium-boron-phosphorus-based-oxide or a tellurium-molybdenum-cerium-based-oxide and an organic vehicle is particularly useful in providing the metallization of the holes in the silicon wafers of MWT solar cells. The result is a metallic electrically conductive via between the collector lines on the front side and the emitter electrode on the back-side of the solar cell. The paste can also be used to form the collector lines on the front-side of the solar cell and the emitter electrode on the back-side of the solar cell. Also disclosed are metal-wrap-through silicon solar cells comprising the fired conductive silver paste. | 08-07-2014 |
20150083217 | CONDUCTIVE PASTE COMPOSITION AND SEMICONDUCTOR DEVICES MADE THEREFROM - A conductive paste composition contains a source of an electrically conductive metal, a lead-tellurium-based oxide, a discrete oxide of an adhesion promoting element, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the paste composition on a semiconductor substrate (e.g., by screen printing) and firing the paste to remove the organic vehicle and sinter the metal and lead-tellurium-based oxide. | 03-26-2015 |