Patent application number | Description | Published |
20140264686 | SOLID-STATE IMAGING DEVICES - A solid-state imaging device is provided. The solid-state imaging device includes a semiconductor substrate containing a plurality of image sensors. A color filter including a plurality of color filter segments is disposed above the semiconductor substrate. Each of the color filter segments corresponds to one of the image sensors. Further, a plurality of partitions is disposed between the color filter segments. Each of the partitions is disposed between any two adjacent color filter segments. The partition has a height smaller than the height of the color filter segment, wherein the height of the partition is based on the bottom of the color filter segment to the top of the partition, and the height of the color filter segment is based on the bottom of the color filter segment to the top of the color filter segment. | 09-18-2014 |
20140339606 | BSI CMOS IMAGE SENSOR - A back surface illuminated image sensor is provided. The back surface illuminated image sensor includes: a first passivation layer disposed on the photodiode array; an oxide grid disposed on the first passivation layer and forming a plurality of holes exposing the first passivation layer; a color filter array including a plurality of color filters filled into the holes, wherein the oxide grid has a refractive index smaller than that of plurality of color filters; and a metal grid aligned to the oxide grid, wherein the metal grid has an extinction coefficient greater than zero. | 11-20-2014 |
20140339615 | BSI CMOS IMAGE SENSOR - A back surface illuminated image sensor is provided. The back surface illuminated image sensor includes: a first passivation layer disposed on the photodiode array; an oxide grid disposed on the first passivation layer and forming a plurality of holes exposing the first passivation layer; a color filter array including a plurality of color filters filled into the holes, wherein the oxide grid has a refractive index smaller than that of plurality of color filters; and a metal grid aligned to the oxide grid, wherein the metal grid has an extinction coefficient greater than zero. | 11-20-2014 |
20150064629 | MANUFACTURING METHOD FOR MICROLENSES - A manufacturing method of microlenses includes providing a substrate; forming a microlens material on the substrate; disposing a mask over the microlens material; performing an exposure process by a radiant beam emitted to the microlens material via the mask; performing a developing process on the microlens material; and forming microlenses by performing a reflow process on the microlens material. | 03-05-2015 |
20150163466 | IMAGING APPARATUS - An imaging apparatus includes a filter, a first image sensor and a second image sensor. The filter transmits a first light in a range of wavelengths and reflects a reflected light out of the range of wavelengths. An incident light is split to the first light and the reflected light. The first image sensor receives the first light to generate a first image signal. The second image sensor receives the reflected light to generate a second image signal. | 06-11-2015 |
20150270298 | SOLID-STATE IMAGING DEVICES AND METHODS OF FABRICATING THE SAME - Solid-state imaging devices and fabrication methods thereof are provided. The solid-state imaging device includes a substrate containing a first photoelectric conversion element and a second photoelectric conversion element. A color filter layer has a first color filter component and a second color filter component respectively disposed above the first and second photoelectric conversion elements. A light-shielding partition is disposed between the first and second color filter components. The light-shielding partition has a height lower than that of the first and second color filter components. A buffer layer is disposed between the first and second color filter components and above the light-shielding partition. The buffer layer has a refractive index lower than that of the color filter layer. | 09-24-2015 |
20150288939 | COLOR CORRECTION DEVICES AND METHODS - A color correction device for an image sensor is provided. The image sensor is divided into regions. The color correction device includes a quantum efficiency (QE) measurement circuit, an addressing circuit, and a correction circuit. The QE measurement circuit generates a color signal according to a sensing signal from each pixel of the image sensor. The addressing circuit receives the color signal corresponding to each pixel, obtains a location of each pixel on the image sensor, and averages all of the color signals corresponding to the pixels whose locations are disposed in one of the regions to obtain an average color signal. The correction circuit receives the average color signal to obtain a color correction matrix of the one of the regions and corrects the color signals of the pixels whose locations are in the one of the regions by the color correction matrix. | 10-08-2015 |
20150325612 | IMAGE SENSING DEVICE - An image sensing device includes: a semiconductor substrate with a photo-sensing element; a passive layer disposed over the semiconductor substrate, having a first refractive index; a color pattern disposed over the passive layer, wherein the color pattern aligns to the photo-sensing element and has a color selected from the group consisting of red (R), green (G), blue (B), and white (W), and a second refractive index; and an electromagnetic wave guiding element disposed in at least one of the color pattern and the passive layer, having a third refractive index, and the third refractive index is greater than the first refractive index or the second refractive index, and a first difference between the third refractive index and the first refractive index is at least 0.2, and a second difference between the third refractive index and the second refractive index is at least 0.2. | 11-12-2015 |