Patent application number | Description | Published |
20090035516 | Organometallic precursor, thin film having the same, metal wiring including the thin film, method of forming a thin film and method of manufacturing a metal wiring using the same - Disclosed are an organometallic precursor that may be used in manufacturing a semiconductor device, a thin film having the same, a metal wiring including the thin film, a method of forming a thin film and a method of manufacturing a metal wiring. An organometallic precursor including a central metal, a borohydride ligand and an amine ligand for reducing a polarity of the organometallic precursor may be provided onto a substrate, and may be thermally decomposed to form a thin film on the substrate. The organometallic precursor having a reduced polarity may be provided to a chamber with a constant flow rate, and thus stability and/or efficiency of a semiconductor manufacturing process may be improved. | 02-05-2009 |
20110045183 | METHODS OF FORMING A LAYER, METHODS OF FORMING A GATE STRUCTURE AND METHODS OF FORMING A CAPACITOR - In a method of forming a layer, a precursor including a metal and a ligand chelating to the metal is stabilized by contacting the precursor with an electron donating compound to provide a stabilized precursor onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor. The precursor stabilized by the electron donating compound has an improved thermal stability and thus the precursor is not dissociated at a high temperature atmosphere, and the layer having a uniform thickness is formed on the substrate. | 02-24-2011 |
20110183527 | Precursor Composition, Methods of Forming a Layer, Methods of Forming a Gate Structure and Methods of Forming a Capacitor - In a method of forming a layer, a precursor composition including a metal and a ligand chelating to the metal is stabilized by contacting the precursor composition with an electron donating compound to provide a stabilized precursor composition onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor composition. The stabilized precursor composition is provided onto the substrate by introducing the precursor composition onto the substrate after the electron donating compound is introduced onto the substrate. The electron donating compound is continuously introduced onto the substrate during and after the precursor composition is introduced. | 07-28-2011 |
20120251724 | BETA-KETOIMINE LIGAND, METHOD OF PREPARING THE SAME, METAL COMPLEX COMPRISING THE SAME AND METHOD OF FORMING THIN FILM USING THE SAME - The β-ketoimine ligand is represented by the following formula 1: | 10-04-2012 |
20140309456 | BETA-KETOIMINE LIGAND, METHOD OF PREPARING THE SAME, METAL COMPLEX COMPRISING THE SAME AND METHOD OF FORMING THIN FILM USING THE SAME - The β-ketoimine ligand is represented by the following formula 1: | 10-16-2014 |
20140316164 | BETA-KETOIMINE LIGAND, METHOD OF PREPARING THE SAME, METAL COMPLEX COMPRISING THE SAME AND METHOD OF FORMING THIN FILM USING THE SAME - The β-ketoimine ligand is represented by the following formula 1: | 10-23-2014 |
Patent application number | Description | Published |
20140197038 | COPPER ELECTROPLATING SOLUTION AND COPPER ELECTROPLATING APPARATUS - An electroplating solution includes an aqueous electrolyte solution including water soluble copper salts, sulfide ions and chloride ions, an accelerator including an organic material having sulfur (S), the accelerator accelerating copper (Cu) reduction, a suppressor including a polyether compound, the suppressor selectively suppressing the copper reduction, and a leveler including a water soluble polymer having nitrogen that is dissolved into positive ions in the aqueous electrolyte solution. | 07-17-2014 |
20140199820 | METHODS OF FORMING A PATTERN AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - A method of forming a pattern includes forming an underlayer on an etching target layer by a chemical vapor deposition (CVD) process, the underlayer including a silicon compound combined with a photoacid generator (PAG), forming a photoresist layer on the underlayer, irradiating extreme ultraviolet (EUV) light on the photoresist layer to form a photoresist pattern, and etching the etching target layer using the photoresist pattern as an etching mask. | 07-17-2014 |
20140242263 | ALUMINUM PRECURSOR, METHOD OF FORMING A THIN FILM AND METHOD OF FORMING A CAPACITOR USING THE SAME - An aluminum compound is represented by following Formula 1. In Formula 1, X is a functional group represented by following Formula 2 or Formula 3. | 08-28-2014 |