Patent application number | Description | Published |
20090009621 | Solid-State Imaging Device, Signal Processing Method, and Camera - A solid-state imaging apparatus that performs color imaging using visible light and imaging using infrared light, the solid-state imaging apparatus including a plurality of two-dimensionally arranged pixel cells, in each of which a filter mainly transmits one of visible light and infrared light, wherein filters are arranged such that a first unit of arrangement where a plurality of filters that mainly transmit visible light are arranged and a second unit of arrangement where a filter that mainly transmits visible light and a filter that mainly transmits infrared light are arranged are alternately arranged in both a row direction and a column direction. Also, in the first unit of arrangement are arranged filters including three kinds of filters each transmitting one of red light, green light and blue light and in the second unit of arrangement are arranged four kinds of filters each transmitting one of red light, green light, blue light and infrared light. | 01-08-2009 |
20090021625 | Solid-State Imaging Device - According to the present invention, as a structure of a pixel section ( | 01-22-2009 |
20090295961 | SOLID-STATE IMAGING DEVICE DRIVING METHOD - Photosensitive cells each includes a photodiode ( | 12-03-2009 |
20090322924 | SOLID-STATE IMAGING DEVICE DRIVING METHOD - Photosensitive cells each includes a photodiode ( | 12-31-2009 |
20100271522 | SOLID-STATE IMAGING DEVICE - The present invention provides a solid-state imaging device which is capable of high-speed and high-quality pixel mixture. The solid-state imaging device includes: a plurality of pixels; a row selecting circuit; a plurality of column signal lines each of which is provided to a corresponding one of columns of pixels, is connected to pixels of the corresponding column, and transfers the signals outputted from the connected pixels; a pixel current source which (i) is provided to a corresponding one of the column signal lines, (ii) is connected to the corresponding column signal line, and (iii) supplies to the connected column signal line a current when the signal is outputted from the selected pixel to the connected column signal line; and a control unit which changes the number of rows of pixels being simultaneously selected by the row selecting circuit, and values of the current supplied by the pixel current source. | 10-28-2010 |
20120200752 | SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device includes a plurality of pixels arranged in rows and columns on a semiconductor substrate. A photoelectric converter of each pixel includes a photoelectric conversion film between a pixel electrode and a transparent electrode. An amplifier transistor has a gate connected to the pixel electrode, and a reset transistor has a source connected to the pixel electrode. The solid-state image pickup device performs: hard reset operation in which a first reset voltage is applied to the drain of the reset transistor, and then the reset transistor is turned on; and soft reset operation in which a second reset voltage which has a higher level than the first reset voltage is applied to the drain of the reset transistor, and then a pulse in a negative direction is applied to the source of the reset transistor via a capacitor. | 08-09-2012 |
20130021509 | SOLID-STATE IMAGING DEVICE DRIVING METHOD - Photosensitive cells each includes a photodiode ( | 01-24-2013 |
20130107094 | SOLID-STATE IMAGING DEVICE, AND METHOD FOR DRIVING THE SAME | 05-02-2013 |
20130107095 | SOLID-STATE IMAGING DEVICE | 05-02-2013 |
20130113060 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device including unit pixel cells, each having a photoelectric conversion film and a pixel electrode which are formed above a silicon substrate, an amplification transistor which is formed on the silicon substrate and outputs a voltage according to a potential of the pixel electrode, and a reset transistor which is formed on the silicon substrate and resets a potential of a gate electrode of the amplification transistor, the imaging device including a vertical signal line which is disposed correspondingly to a column of the unit pixel cells, and transmits a voltage of the unit pixel cells of the corresponding column, and a vertical scanning unit which selects a row of the unit pixel cells having a voltage to be outputted to the vertical signal line, wherein the vertical signal line is located below the pixel electrode of the unit pixel cells corresponding to the vertical signal line. | 05-09-2013 |
20130277536 | IMAGE-CAPTURING APPARATUS - An image-capturing apparatus including a solid-state imaging device including unit-cells arranged in a matrix, in which each of the unit-cells includes a photoelectric conversion unit including: a photoelectric conversion film formed above a semiconductor substrate; a pixel electrode formed on a surface of the photoelectric conversion film, the surface facing the semiconductor substrate; and a transparent electrode formed on a surface of the photoelectric conversion film, the surface being opposite the surface on which the pixel electrode is formed, and the image-capturing apparatus further includes: a voltage applying unit which applies, between the pixel electrode and the transparent electrode, a variable sensitivity voltage for controlling sensitivity of the solid-state imaging device; a level detecting unit which detects an output level of image-captured image data from the solid-state imaging device; and a controlling unit which varies the variable sensitivity voltage based on the output level detected by the level detecting unit. | 10-24-2013 |
20140077067 | SOLID-STATE IMAGING DEVICE - Unit pixel cells each includes: a photoelectric conversion film; a transparent electrode; a pixel electrode; an amplification transistor; a reset transistor; and an element isolation STI and a leakage suppression region for electrically isolating the amplification transistor and the reset transistor, the first isolation region being in a silicon substrate, between the amplification transistor and the reset transistor, the reset transistor including: a gate electrode; and a drain region which is connected to the pixel electrode, and is in the silicon substrate, between the gate electrode and element isolation STI and the leakage suppression region, in which a depletion layer formed by a first PN junction between the drain region and its surrounding region and in contact with a surface of the silicon substrate is narrower than a depletion layer formed by a second PN junction between the drain region and its surrounding region and formed in the silicon substrate. | 03-20-2014 |
20140139712 | IMAGING DEVICE - An imaging device includes: a stack-type solid-state imaging device which includes pixels including: a photoelectric conversion film which performs photoelectric conversion on light to convert the light into signal charges; a pixel electrode on a first surface of the photoelectric conversion film, the first surface being at a side of the semiconductor substrate; a transparent electrode on a second surface of the photoelectric conversion film, the second surface being opposite to the first surface; and a pixel circuit unit configured to read the signal charges, and accumulate the read signal charges, and the imaging device further includes a control unit configured to control exposure time by selectively applying, to the transparent electrode, a voltage having a first voltage value at which the signal charges move to the pixel circuit unit and a voltage having a second value at which the signal charges move to the pixel circuit unit. | 05-22-2014 |
20150070549 | SOLID-STATE IMAGE DEVICE - A solid-state imaging device including pixels, each pixel having a reset transistor, a selection transistor, an amplification transistor, and a photoelectric conversion unit. The photoelectric conversion unit has a photoelectric conversion film which performs photoelectric conversion, a pixel electrode formed on the surface of the photoelectric conversion film that faces the semiconductor substrate, and a transparent electrode formed on the surface of the photoelectric conversion film that is opposite to the pixel electrode, and the amplitude of a row reset signal applied to the gate of the reset transistor is smaller than at least one of (a) the maximum voltage applied to the drain of the amplification transistor, (b) the maximum voltage applied to the gate of the selection transistor, (c) the power source voltage applied to an inverting amplifier, and (d) the maximum voltage applied to a transparent electrode. | 03-12-2015 |
Patent application number | Description | Published |
20130002134 | Lighting Apparatus - According to an exemplary embodiment, a lighting apparatus includes a light source that includes a light emitting element, and a member which is irradiated by light emitted from the light source and which is formed of resin substantially not containing halogen or phosphorus. | 01-03-2013 |
20130070460 | LIGHTING APPARATUS - A lighting apparatus according to an exemplary embodiment includes a light source including a light emitting element, a reflection portion main body that is formed of an incombustible resin and is provided at an emission side of the light source, and a reflection layer that is formed of resin substantially not containing halogen or phosphorus and is provided on a surface of the reflection portion main body. | 03-21-2013 |
20130214667 | Lighting Apparatus - According to an exemplary embodiment, a lighting apparatus includes a light source that includes a light emitting element, and a member which is irradiated with light emitted from the light source and which is formed of resin having absorptivity of 15% or less in a wavelength in which intensity is 10% of a peak intensity, at a wavelength side that is shorter than an intensity peak of a spectrum of blue light emitted from the light source. | 08-22-2013 |
Patent application number | Description | Published |
20130250586 | Lighting Device - A lighting device according to an embodiment includes a light source module, a thermal radiation member, and a fixing member. The light source module is a module mounted with a light-emitting element such as an LED (Light Emitting Diode) on the inside and including the light-emitting element as a light source. In the thermal radiation member, the light source module is set. The thermal radiation member radiates heat generated from the light source module. A fixing member is screwed on a sidewall of the thermal radiation member in a state in which the fixing member surrounds the light source module and the thermal radiation member. | 09-26-2013 |
20130300277 | BULB-TYPE LAMP AND LUMINAIRE - According to one embodiment, in a constricted part of a globe, one end is set to a minimum diameter, the other end is set to a maximum diameter, and a diameter thereof increases from the one end side to the other end side. The constricted part of the globe is concaved into the inside of an imaginary straight line connecting an outer edge of the one end and an outer edge of the other end when viewed in section. A light source part includes a semiconductor light-emitting element and is contained in the globe so that a light-emitting part is positioned between both the ends of the constricted part of the globe. A cap is positioned on one end side of the globe. | 11-14-2013 |
20130301280 | Bulb-Shaped Lamp and Luminaire - According to one embodiment, a bulb-shaped lamp includes a light source unit, a plurality of substrates, a substrate holding member, and a globe. The respective substrates hold light source units. The substrate holding member has thermal conductivity and an insulating property and holds the respective substrates. The globe is thermally connected to the substrate holding member. The cap is positioned on one end side of the globe. | 11-14-2013 |
20150062923 | Light-Emitting Module and Lighting System - A light-emitting module according to an embodiment includes a light-emitting element which emits light and a substrate on which the light-emitting element is mounted. Further, the light-emitting module according to the embodiment includes a lens, which is formed from a material containing an aliphatic hydrocarbon organic compound having a cyclic structure in the main backbone, and is disposed on the substrate so as to cover the light-emitting element, and in which on a portion irradiated with light emitted by the light-emitting element, the maximum illuminance of the light is 100,000 lx or more and 300,000 lx or less or the maximum energy per unit area of the light is 30,000 μW/cm | 03-05-2015 |