Patent application number | Description | Published |
20100232209 | CONTROL CIRCUIT FOR FORMING PROCESS ON NONVOLATILE VARIABLE RESISTIVE ELEMENT AND CONTROL METHOD FOR FORMING PROCESS - A nonvolatile semiconductor memory device can carry out a forming process simultaneously on the nonvolatile variable resistive elements of memory cells and make the forming time shorter. The nonvolatile semiconductor memory device has a forming detection circuit provided between the memory cell array and the second selection line (bit line) decoder. The forming detection circuit detects the completion of the forming process for memory cells by measuring the fluctuation in the potential of second selection lines or the current flowing through the second selection lines when applying a voltage pulse for a forming process through the second selection lines simultaneously to the memory cells on which a forming process is to be carried out connected to the same first selection line (word line), and prevents a voltage from being applied to the second selection lines connected to the memory cells where the completion of the forming process is detected. | 09-16-2010 |
20110228586 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device includes a bit voltage adjusting circuit which, for each bit line, fixes potentials of a selected bit line and a non-selected bit line to a predetermined potential to perform a memory operation and a data voltage adjusting circuit which, for each data line, fixes potentials of a selected data line and a non-selected data line to a predetermined potential to perform a memory operation. Each of the voltage adjusting circuits includes an operational amplifier and a transistor, a voltage required for a memory operation is input to the non-inverted input terminal of the operational amplifier, and the inverted input terminal of the operational amplifier is connected to the bit line or the data line, so that the potential of the bit line or the data line is fixed to a potential of the non-inverted input terminal of the operational amplifier. | 09-22-2011 |
20110292715 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a memory cell array in which a plurality of memory cells is aligned in a matrix shape, each memory cell including a two-terminal memory element and a transistor for selection connected in series; a first voltage applying circuit that applies a writing voltage pulse to first bit lines; and a second voltage applying circuit that applies a pre-charge voltage to the first bit lines and second bit lines, wherein in a writing of a memory cell, after the second voltage applying circuit has pre-charged both ends of the memory cell to a same voltage, the first voltage applying circuit applies the writing voltage pulse via the first bit line that is directly connected to the transistor for selection, and the second voltage applying circuit applies the pre-charge voltage to the second bit line directly connected to the memory element. | 12-01-2011 |
20120014163 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF DRIVING THE SAME - A semiconductor memory device includes a memory cell array where a plurality of memory cells are arranged in a matrix, each of the memory cells serially connecting a two-terminal type memory element and a transistor for selection, a first voltage applying circuit that applies a write voltage pulse to a bit line, and a second voltage applying circuit that applies a precharge voltage to a bit line and a common line. In writing the memory cell, after the second voltage applying circuit has both terminals of the memory cell previously precharged to the same voltage, the first voltage applying circuit applies the write voltage pulse to one terminal of the writing target memory cell via the bit line, and while the write voltage pulse is applied, the second voltage applying circuit maintains the application of the precharge voltage to the other terminal of the memory cell via the common line. | 01-19-2012 |
20130054069 | VEHICLE DRIVING DEVICE, VEHICLE CHARGING SYSTEM, AND AUTOMOBILE - A vehicle driving device is arranged such that in accordance with an instruction signal from the outside, a first battery managing section outputs, to the outside, a signal related to charging/discharging control for a first battery. | 02-28-2013 |
20130068277 | PHOTOVOLTAIC MODULE AND PHOTOVOLTAIC MODULE ARRAY - A photovoltaic module of the present invention includes a cluster power generation unit in which multiple photovoltaic elements are connected in series via connection points, a pair of output terminals connected to respective ends of a series circuit formed by the cluster power generation unit, and a specified terminal connected to a specified connection point that is specified from among the connection points. | 03-21-2013 |
20130069582 | PUSH-PULL CIRCUIT, DC/DC CONVERTER, SOLAR CHARGING SYSTEM, AND MOVABLE BODY - A push-pull circuit comprising: a push-pull first switching element and second switching element; a first rectifier element; a third switching element for switching a pathway between conductance and cutoff, the pathway leading from a connection point between the first switching element and an inductive load via the first rectifier element to a connection point between a DC power source and a center tap of the inductive load; a second rectifier element; and a fourth switching element for switching a pathway between conductance and cutoff, the pathway leading from a connection point between the second switching element and the inductive load via the second rectifier element to a connection point between the DC power source and the center tap of the inductive load. | 03-21-2013 |
20130106342 | DC-DC CONVERTER, SOLAR CHARGING SYSTEM, AND MOVABLE BODY | 05-02-2013 |
20140009952 | LIGHT EMITTING DEVICE, LIGHTING SYSTEM, HEADLIGHT, AND VEHICLE - A light emitting device which includes at least one of a laser light source ( | 01-09-2014 |
20140028375 | SEMICONDUCTOR DEVICE, AND INVERTER, CONVERTER AND POWER CONVERSION DEVICE EMPLOYING THE SAME - A semiconductor device includes a high breakdown voltage, high Gm first transistor and a low breakdown voltage, low Gm second transistor connected in series between first and second nodes, and a low breakdown voltage, high Gm third transistor connected to the second transistor in parallel. When the second transistor is turned on, the first transistor turns on, and furthermore, when the third transistor is turned on, an electrically conducting state is established between the first and second nodes. The second, low breakdown voltage transistor is turned on to turn on the first, high breakdown voltage transistor, and a turn-on time with only limited variation can be achieved. | 01-30-2014 |
20140168940 | LASER-BEAM UTILIZATION DEVICE AND VEHICLE HEADLIGHT - A headlamp ( | 06-19-2014 |