Patent application number | Description | Published |
20080223838 | Laser treatment apparatus, laser treatment method, and manufacturing method of semiconductor device - The invention relates to a laser treatment apparatus including a laser oscillator, an interlock provided in the laser oscillator, a movable table which moves with a certain movement period, a timer, an interlock provided in the timer, a sensor which can detect movement of the movable table, and a computer, in which the timer starts measuring time when the sensor senses passage of the movable table, and when the movable table does not pass the sensor even after the movement period, conduction between contacts of the interlock provided in the timer is blocked to operate the interlock in the laser oscillator, thereby stopping laser output. The invention also relates to a laser treatment method using the laser treatment apparatus. | 09-18-2008 |
20090250590 | LASER IRRADIATION METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - The present invention is to provide a laser irradiation method for performing homogeneous laser irradiation to the irradiation object even when the thickness of the irradiation object is not even. In the case of irradiating the irradiation object having uneven thickness, the laser irradiation is performed while keeping the distance between the irradiation object and the lens for condensing the laser beam on the surface of the irradiation object constant by using an autofocusing mechanism. In particular, when the irradiation object is irradiated with the laser beam by moving the irradiation object relative to the laser beam in the first direction and the second direction of the beam spot formed on the irradiation surface, the distance between the irradiation object and the lens is controlled by the autofocusing mechanism before the irradiation object is moved in the first and second directions. | 10-08-2009 |
20100207040 | LIGHT EXPOSURE APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME - When annealing of a semiconductor film is conducted using a plurality of lasers, each of the distances between laser irradiation regions is different. When a lithography step is conducted in accordance with a marker which is formed over a substrate in advance after the step, light-exposure is not correctly conducted to a portion crystallized by laser. By using a laser irradiation region obtained on a laser irradiation step as a marker, light-exposure is conducted by making a light-exposure position of a stepper coincide with a large grain size region in the laser irradiation region. A large grain size region and a poorly crystalline region are detected by utilizing a thing that scattering intensity of light is different between the large grain size region and the poorly crystalline region, thereby determining a light-exposure position. | 08-19-2010 |
20100237354 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light. | 09-23-2010 |
20100304506 | LASER IRRADIATION METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - The present invention is to provide a laser irradiation method for performing homogeneous laser irradiation to the irradiation object even when the thickness of the irradiation object is not even. In the case of irradiating the irradiation object having uneven thickness, the laser irradiation is performed while keeping the distance between the irradiation object and the lens for condensing the laser beam on the surface of the irradiation object constant by using an autofocusing mechanism. In particular, when the irradiation object is irradiated with the laser beam by moving the irradiation object relative to the laser beam in the first direction and the second direction of the beam spot formed on the irradiation surface, the distance between the irradiation object and the lens is controlled by the autofocusing mechanism before the irradiation object is moved in the first and second directions. | 12-02-2010 |
20100323504 | LASER IRRADIATION APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - It is an object of the present invention to provide a laser irradiation apparatus being able to irradiate the irradiation object with the laser beam having homogeneous energy density without complicating the optical system. The laser irradiation apparatus of the present invention comprises a laser oscillator, an optical system for scanning repeatedly a beam spot of the laser beam emitted from the laser oscillator in a uniaxial direction over the surface of the irradiation object, and a position controlling means for moving the position of the irradiation object relative to the laser beam in a direction perpendicular to the uniaxial direction. | 12-23-2010 |
20110024406 | LASER IRRADIATION METHOD AND LASER IRRADIATION APPARATUS - An object of the present invention is to provide a laser irradiation method and a laser irradiation apparatus for irradiating an irradiation surface with a linear beam having more homogeneous intensity by blocking a low-intensity part of the linear beam without forming the fringes due to the diffraction on the irradiation surface. In the laser irradiation, a laser beam emitted from a laser oscillator | 02-03-2011 |
Patent application number | Description | Published |
20110011084 | EXHAUST GAS RECIRCULATION SYSTEM FOR INTERNAL COMBUSTION ENGINE - An EGR system includes an exhaust gas recirculation pipe recirculating exhaust gas flowing through an exhaust pipe into an intake pipe upstream of a compressor of a supercharger. A swirling flow generator generates a swirling flow of intake air and exhaust gas along an inner surface of the intake pipe in order to centrifugally separate foreign matters from the intake air and the exhaust gas. A foreign-matters-collecting chamber collects the centrifugally separated solid foreign matters therein. The separated solid foreign matters are discharged through a discharge opening and a discharge pipe. | 01-20-2011 |
20120255513 | AIR INTAKE DEVICE - An air intake device includes a cooler and a surge tank accommodating the cooler. The air intake device is to be connected to a cylinder head of an engine. The cylinder head includes an intake port that accommodates an intake valve. The cooler has a refrigerant passage through which refrigerant flows and an air passage through which intake air flows. The surge tank has a connector connected to the cylinder head. The cooler has a protrusion protruding from the connector toward the intake valve. | 10-11-2012 |
20130087730 | VALVE DEVICE - A valve device includes a shaft, a valving element, a housing, a bearing part, and a breathing path. The shaft is driven in its axial direction. The valving element is displaced integrally with the shaft. The housing accommodates the valving element. The bearing part is provided for the housing, and includes a sliding hole, in which an end portion of the shaft is inserted and which supports the shaft slidably in the axial direction, thereby limiting a displacement direction of the shaft and the valving element to the axial direction. The breathing path communicates between a bottom part of the sliding hole and an inside of the housing. | 04-11-2013 |
20130228141 | COOLING DEVICE FOR ENGINE - A cooling device for an internal combustion engine includes a jacket provided in the engine such that a coolant is capable of flowing through the jacket, a flow control valve connected to at least one of an inlet side of the jacket and an outlet side of the jacket to adjust a flow rate of the coolant. The flow control valve includes a housing having a flow passage communicating with the jacket such that the coolant is capable of flowing through the flow passage, a valve body arranged in the housing to open or close the flow passage, and a heat transfer member contacting the engine and a part of the housing accommodating the valve body to transfer a heat from the engine to the housing. | 09-05-2013 |
20150361839 | OIL COOLING SYSTEM FOR SUPERCHARGED ENGINE - In an oil cooling system for a supercharged engine, coolant is introduced from a third coolant supply passage that branches from a first coolant supply passage into a coolant circulation passage of an oil cooler. The coolant has not cooled an engine and a turbocharger. By efficiently cooling lubricating oil (lubricating oil after lubricating supercharger) having lubricated the respective cooled portions of the turbocharger, oil-deterioration-suppressing effect can be improved even with the coolant of a small amount. | 12-17-2015 |
Patent application number | Description | Published |
20090121385 | Method of forming a coating layer on the surface of a molded product within a mold - By managing a coating material injection time and the like parameters so that they may be controlled within specifically determined ranges, an in-mold coating formation method is provided for manufacturing a molded product coated with a coating layer having a uniform quality in its outside appearance. By continuously and unifyingly managing a mold opening amount and a mold closing force, an in-mold coating formation method and an in-mold coating formation apparatus are provided which are so formed that, if the control of a mold closing force and the control of a mold opening amount are continuously changed and at the same time a high precision and a high response are maintained, it is possible to enlarge a selectable range for selecting a molding condition, thereby producing an integrally formed molded product having an excellent outside appearance and whose coating layer has a high adhesion strength. Further, there are provided a mold having a specifically formed auxiliary cavity and an in-mold coating formation method which employs said mold, so that it is possible to prevent a coating material from leaking out of the mold, thereby shortening the molding formation cycle, and making it possible to manufacture a molded product having a stabilized quality. Moreover, by controlling an internal pressure in the mold cavity under a predetermined condition after the injection of the coating material, there is provided a further in-mold coating formation method which makes it possible to obtain an integrally formed molded product whose coating layer has a sufficient strength with the molded product, without having to use a special coating material and a special resin to be used for molding. In addition, by using a mold having a specifically shaped sub-cavity, there is provided a still further in-mold coating formation method which can keep mold temperature at a relatively low value, cause the coating material to cure at a predetermined temperature and within a predetermined time period, thereby shortening the molding formation cycle, improving the productivity, improving the physical properties of a coating layer, thus obtaining a good molded product. | 05-14-2009 |
Patent application number | Description | Published |
20090072343 | SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE - A high-performance semiconductor device using an SOI substrate in which a low-heat-resistance substrate is used as a base substrate. Further, a high-performance semiconductor device formed without using chemical polishing. Further, an electronic device using the semiconductor device. An insulating layer over an insulating substrate, a bonding layer over the insulating layer, and a single-crystal semiconductor layer over the bonding layer are included, and the arithmetic-mean roughness of roughness in an upper surface of the single-crystal semiconductor layer is greater than or equal to 1 nm and less than or equal to 7 nm. Alternatively, the root-mean-square roughness of the roughness may be greater than or equal to 1 nm and less than or equal to 10 nm. Alternatively, a maximum difference in height of the roughness may be greater than or equal to 5 nm and less than or equal to 250 nm. | 03-19-2009 |
20140209898 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - When an oxide semiconductor film is microfabricated to have an island shape, with the use of a hard mask, unevenness of an end portion of the oxide semiconductor film can be suppressed. Specifically, a hard mask is formed over the oxide semiconductor film, a resist is formed over the hard mask, light exposure is performed to form a resist mask, the hard mask is processed using the resist mask as a mask, the oxide semiconductor film is processed using the processed hard mask as a mask, the resist mask and the processed hard mask are removed, a source electrode and a drain electrode are formed in contact with the processed oxide semiconductor film, a gate insulating film is formed over the source electrode and the drain electrode, and a gate electrode is formed over the gate insulating film, the gate electrode overlapping with the oxide semiconductor film. | 07-31-2014 |
20160054521 | OPTICAL SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING THE SAME - Disclosed is an optical semiconductor device which can be improved in light shift precision and restrained from undergoing a loss in light transmission. In this device, an inner side-surface of a first optical coupling portion of an optical coupling region and an inner side-surface of a second optical coupling portion of the region are increased in line edge roughness. This manner makes light coupling ease from a first to second optical waveguide. By contrast, the following are decreased in line edge roughness: an outer side-surface of the first optical coupling portion of the optical coupling region; an outer side-surface of the second optical coupling portion of the region; two opposed side-surfaces of a portion of the first optical waveguide, the portion being any portion other than the region; and two opposed side-surfaces of a portion of the second optical waveguide, the portion being any portion other than the region. | 02-25-2016 |
20160056115 | OPTICAL SEMICONDUCTOR DEVICE - A technique is provided which can prevent the quality of an electrical signal from degrading in an optical semiconductor device. | 02-25-2016 |
Patent application number | Description | Published |
20120238048 | METHOD OF MANUFACTURING A SOLAR CELL MODULE AND APPARATUS OF MANUFACTURING A SOLAR CELL MODULE - A method of manufacturing a solar cell, which includes an edge deletion step using a laser beam, and a manufacturing apparatus which is used in such a method, the method and the apparatus being capable of preventing a shunt and cracks from being generated are provided. By radiating a first laser beam to a multilayer body, which includes a transparent electrode layer, a photoelectric conversion layer, and a back electrode layer sequentially formed on a transparent substrate, from a side of the transparent substrate, the photoelectric conversion layer and the back electrode layer in a first region are removed, and by radiating a second laser beam into the region such that the second laser beam is spaced from a peripheral rim of the region, the transparent electrode layer in a second region is removed. | 09-20-2012 |
20150179395 | ION BEAM IRRADIATION DEVICE - An ion beam irradiation device includes a vacuum chamber that accommodates a transport tray which holds a substrate, a transport unit that transports the transport tray in the vacuum chamber in a transport direction, an ion beam irradiation unit that irradiates, with ion beams, a predetermined irradiation position in the vacuum chamber, and a position detector that detects a position of the transport tray. The transport tray includes a plurality of indices that are arranged in the transport direction to indicate portions of the transport tray. The position detector images each of the indices at a predetermined imaging position during transportation of the transport tray and detects a position of the transport tray relative to the imaging position based on the imaged index. | 06-25-2015 |