Yoonhae
Yoonhae Kim, Yongin-Si KR
Patent application number | Description | Published |
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20110281426 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A semiconductor device and a method of forming the semiconductor device includes: forming gate electrodes on a semiconductor substrate and forming spacers on both side surfaces of the gate electrodes; forming capping patterns on the gate electrodes; and forming a metal contact between the gate electrodes. Each of the capping patterns is formed to have a width greater than a width of each of the gate electrodes. | 11-17-2011 |
20140210017 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A semiconductor device and a method of forming the semiconductor device includes: forming gate electrodes on a semiconductor substrate and forming spacers on both side surfaces of the gate electrodes; forming capping patterns on the gate electrodes; and forming a metal contact between the gate electrodes. Each of the capping patterns is formed to have a width greater than a width of each of the gate electrodes. | 07-31-2014 |
Yoonhae Kim, Suwon-Si KR
Patent application number | Description | Published |
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20140191312 | Semiconductor Device and Method of Forming the Same - A semiconductor device includes a substrate having an active region and a device isolation layer defining the active region, a gate electrode on the active region, source/drain regions at the active region at both sides of the gate electrode, a buffer insulating layer on the device isolation layer, an etch stop layer formed on the buffer insulating layer and extending onto the gate electrode and the source/drain region, a first interlayer insulating layer on the etch stop layer, a first contact and a second contact penetrating the first interlayer insulating layer and the etch stop layer. The first contact and the second contact are spaced apart from each other and are in contact with the source/drain region and the buffer insulating layer, respectively. | 07-10-2014 |
Yoonhae Kim, Gyeonggi-Do KR
Patent application number | Description | Published |
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20140339559 | SEMICONDUCTOR DEVICE HAVING TEST STRUCTURE - A semiconductor device is provided. First and second pads are electrically connected to a plurality of test structures. Each test structure includes an active region, active patterns, gate electrodes and an electrode pattern. The active region includes a rounded corner portion. The active patterns protrudes from the semiconductor substrate and extends in parallel in a first direction. The gate electrodes crosses over the active patterns in a second direction. One gate electrode is electrically connected to the first pad. The electrode pattern is disposed at a side of the gate electrode electrically connected to the first pad. The electrode pattern is electrically connected to the second pad. The electrode pattern crosses over the active patterns. An overlapping area of the electrode pattern and the active patterns in each test structure is different from an overlapping area of the electrode pattern and the active patterns in other test structures. | 11-20-2014 |