Patent application number | Description | Published |
20090090899 | Phase change memory device and method of manufacturing the same - A method of manufacturing a phase change memory device includes forming at least one active device on a substrate, forming a bottom electrode electrically connected to the at least one active device, forming a phase change material layer and a top electrode on the bottom electrode, forming a capping layer on an upper surface of the top electrode and on side surfaces of the top electrode and phase change material layer, removing a portion of the capping layer overlapping the upper surface of the top electrode to define capping layer sidewall portions, forming an interlayer insulation film on the capping layer sidewall portions and on the top electrode, removing a portion of the interlayer insulation film from the top electrode to form a contact hole through the interlayer insulation film, and forming a contact plug in the contact hole. | 04-09-2009 |
20100072446 | Phase-change semiconductor device and methods of manufacturing the same - In a phase-change semiconductor device and methods of manufacturing the same, an example method may include forming a metal layer pattern on a substrate, the metal layer pattern including an opening that exposes a portion of the substrate, forming an etch stop layer on the metal layer pattern, a sidewall of the opening and the exposed portion of the substrate, the etch stop layer formed with a thickness less than an upper thickness threshold, and reducing at least a portion of the etch stop layer, the reduced portion of the etch stop layer forming an electrical connection with the substrate. | 03-25-2010 |
20100096681 | Cell structure for a semiconductor memory device and method of fabricating the same | 04-22-2010 |
20100147799 | CHEMICAL MECHANICAL POLISHING METHOD - In an embodiment, a chemical mechanical polishing method for a substrate having a first layer and a stepped portion. A surface of the first layer is positioned above an upper face of the stepped portion. A polishing process for selectively removing the stepped portion is performed on the first layer by using a first slurry composition that has a self-stopping characteristic so that the first layer is changed into a second layer having a substantially flat surface. A second polishing process is performed using a second slurry composition that does not have the self-stopping characteristic, until the upper face of the stepped portion is exposed. | 06-17-2010 |
20150151336 | NOZZLE AND APPARATUS FOR PROCESSING A SUBSTRATE INCLUDING THE SAME - A nozzle may include a nozzle body, a conductive line and a resistance-measuring member. The nozzle body may include a plurality of injecting holes. The conductive line may be disposed along the injecting holes. The resistance-measuring member may be configured to measure a resistance of the conductive line to detect a deformation of the injecting holes. | 06-04-2015 |
20150176897 | SEALING MEMBER AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME - A sealing member includes a body having a ring shape, a lower contacting portion protruding from a lower end of the body and having at least one recess, the recess provided in a lower surface of the lower contacting portion and extending in a radial direction of the body, and an outer contacting portion protruding outwards from the body along an outer side portion of the body. | 06-25-2015 |
20150299629 | CLEANING SOLUTION COMPOSITION AND METHOD OF CLEANING SEMICONDUCTOR DEVICE USING THE SAME - A cleaning solution composition includes an organic solvent in which a metal fluoride does not dissolve, at least one fluoride compound that generates bifluoride (HF | 10-22-2015 |
20150355551 | SYSTEMS FOR REMOVING PHOTORESISTS AND METHODS OF REMOVING PHOTORESISTS USING THE SAME - A system for removing a photoresist includes a solution storage configured to store a preliminary photoresist removal solution, a solution activation unit configured to convert the preliminary photoresist removal solution from the solution storage into an activated photoresist removal solution, and a photoresist removal unit configured to receive the activated photoresist removal solution from the solution activation unit, and configured to load a substrate including a photoresist pattern formed thereon. | 12-10-2015 |