Patent application number | Description | Published |
20100032660 | ORGANIC THIN FILM TRANSISTOR, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE - An organic thin film transistor is disclosed, including a substrate formed of an organic insulating layer, a first layer deposited on the substrate using a plating technique to be used for forming a source electrode and a drain electrode, a second layer of a metal material deposited covering the first layer using a further plating technique to be used for forming the source electrode and the drain electrode with the metal material capable of forming an ohmic contact with an organic semiconductor material lower than the first layer, and an organic semiconductor layer over a region between the source electrode and the drain electrode, which are each formed with the first layer and the second layer. Also disclosed is an electric device provided with the organic thin film transistor. | 02-11-2010 |
20100219402 | THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THE SAME - The present invention provides a method of manufacturing a thin film transistor of a top-contact structure with suppressed deterioration by a process which is easy and suitable for increase in area without damaging an organic semiconductor pattern. The organic semiconductor pattern is formed on a substrate. An electrode material film is formed on the substrate so as to cover the organic semiconductor pattern. A resist pattern is formed on the electrode material film. By wet etching using the resist pattern as a mask, the electrode material film is patterned. By the process, a source electrode and a drain electrode are formed. | 09-02-2010 |
20100271353 | SEMICONDUCTOR DEVICE, PRODUCTION METHOD OF SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC EQUIPMENT - A semiconductor device includes first layer wiring including a gate electrode mounted on a substrate; a gate insulating film having an opening that exposes part of the first layer wiring and covering the entire surface of the substrate including the gate electrode; second layer wiring including a source electrode and a drain electrode mounted on the gate insulating film; an insulating partition layer having a first opening that exposes an edge between the source electrode and the drain electrode and a part of the gate insulating film between the source electrode and the drain electrode and a second opening that is aligned with the opening formed in the gate insulating film; and an organic semiconductor layer disposed across the source electrode and the drain electrode at the bottom surface of the first opening formed in the partition layer. | 10-28-2010 |
20100314611 | ELECTRODE COVERING MATERIAL, ELECTRODE STRUCTURE AND SEMICONDUCTOR DEVICE - A semiconductor device is provided and includes a field effect transistor having a gate electrode, a gate insulating layer, a channel forming region composed of an organic semiconductor material layer and a source/drain electrode made of a metal. A portion of the source/drain electrode in contact with the organic semiconductor material layer comprising the channel forming region is covered with an electrode coating material. Because the electrode coating material is composed of organic molecules having a functional group which can be bound to a metal ion and a functional group that binds to the source/drain electrode composed of the metal, low contact resistance and high mobility can be achieved. | 12-16-2010 |
20110012097 | SEMICONDUCTOR DEVICE AND DISPLAY APPARATUS - A semiconductor device is provided in which, while an organic semiconductor layer is sufficiently protected by a protective film, it is possible to prevent delamination at the protective film interface, thereby achieving good characteristics and improving yield due to improvement in mechanical reliability. A semiconductor device ( | 01-20-2011 |
20120012825 | THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THE SAME - The present invention provides a method of manufacturing a thin film transistor of a top-contact structure with suppressed deterioration by a process which is easy and suitable for increase in area without damaging an organic semiconductor pattern. The organic semiconductor pattern is formed on a substrate. An electrode material film is formed on the substrate so as to cover the organic semiconductor pattern. A resist pattern is formed on the electrode material film. By wet etching using the resist pattern as a mask, the electrode material film is patterned. By the process, a source electrode and a drain electrode are formed. | 01-19-2012 |
20120199836 | THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THE SAME - The present invention provides a method of manufacturing a thin film transistor of a top-contact structure with suppressed deterioration by a process which is easy and suitable for increase in area without damaging an organic semiconductor pattern. The organic semiconductor pattern is formed on a substrate. An electrode material film is formed on the substrate so as to cover the organic semiconductor pattern. A resist pattern is formed on the electrode material film. By wet etching using the resist pattern as a mask, the electrode material film is patterned. By the process, a source electrode and a drain electrode are formed. | 08-09-2012 |
20120250139 | DISPLAY APPARATUS - Disclosed herein is a display apparatus including first and second substrates, at least one of which has a light transmitting characteristic, as well as first and second electrodes provided on the two mutually facing surfaces of the first and second substrates respectively; and an electrophoretic device provided between the first and second substrates, wherein the first substrate and the first electrode each have an external edge folded back so as to cover at least a portion of a terminal surface of the second substrate. | 10-04-2012 |
20130005120 | ORGANIC THIN FILM TRANSISTOR, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE - An organic thin film transistor including a substrate with an organic insulating layer; a source and drain electrode layer electro deposited on the substrate; a second metal material source and drain electrode layer covering the first layer, the metal material capable of forming an ohmic contact with an organic semiconductor material lower than the first layer; and an organic semiconductor layer over a region between the source electrode and the drain electrode | 01-03-2013 |
20130027854 | DISPLAY AND ELECTRONIC UNIT - There are provided a display in which a sealing section is prevented from being spread and the sealing section is allowed to be provided in a desired region, and an electronic unit including the display. The display includes: a substrate including a sealing region and a step section, the sealing region surrounding a display region, and the step section surrounding the sealing region from outside; a display layer provided in the display region; and a sealing section provided in the sealing region. | 01-31-2013 |
20130050632 | DISPLAY AND ELECTRONIC UNIT - A display includes: a display substrate including a liquid crystal layer; a driving substrate driving the display substrate; and a damp-proof layer continuously provided along a top face and side faces of the display substrate, and a top face of the driving substrate. | 02-28-2013 |
20130134427 | TRANSISTOR, DISPLAY, AND ELECTRONIC APPARATUS - A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode with an insulating layer in between; a pair of source-drain electrodes electrically connected to the semiconductor layer; and a contact layer provided in a moving path of carriers between each of the pair of source-drain electrodes and the semiconductor layer, the contact layer having end surfaces covered with the source-drain electrode. | 05-30-2013 |
20130193420 | THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THE SAME - The present invention provides a method of manufacturing a thin film transistor of a top-contact structure with suppressed deterioration by a process which is easy and suitable for increase in area without damaging an organic semiconductor pattern. The organic semiconductor pattern is formed on a substrate. An electrode material film is formed on the substrate so as to cover the organic semiconductor pattern. A resist pattern is formed on the electrode material film. By wet etching using the resist pattern as a mask, the electrode material film is patterned. By the process, a source electrode and a drain electrode are formed. | 08-01-2013 |
20130202840 | DISPLAY DEVICE AND ELECTRONIC APPARATUS - A display device includes: a display layer; a surface film disposed to face a display surface of the display layer; and a moisture-proof film disposed between the display layer and the surface film and including a projecting section. The projecting section projects outwardly of an end face of the display layer and an end face of the surface film. | 08-08-2013 |
20130277650 | SIGNAL TRANSMISSION UNIT, DISPLAY UNIT, AND ELECTRONIC APPARATUS - An electronic apparatus (for example a display unit) including an active region (for example a display region) and a peripheral region. In the active region are disposed: active units (for example pixel circuit), a first wiring line connected to an active unit, a second wiring line connected to an active unit, and a third wiring line disposed in a different layer than the second wiring line and connected to the second wiring line. The first wiring line and the third wiring line extend out of the active region into the peripheral region, and exit the display region on a same side of the display region. A first peripheral circuit for communicating with the first wiring line and a second peripheral circuit for communicating with the second wiring line are disposed in the peripheral region, and the third wiring line is connected to the second peripheral circuit. | 10-24-2013 |
20140160553 | DISPLAY APPARATUS - Disclosed herein is a display apparatus including first and second substrates, at least one of which has a light transmitting characteristic, as well as first and second electrodes provided on the two mutually facing surfaces of the first and second substrates respectively; and an electrophoretic device provided between the first and second substrates, wherein the first substrate and the first electrode each have an external edge folded back so as to cover at least a portion of a terminal surface of the second substrate. | 06-12-2014 |