Patent application number | Description | Published |
20130254470 | EFFICIENT DATA STORAGE IN MULTI-PLANE MEMORY DEVICES - A method for data storage includes initially storing a sequence of data pages in a memory that includes multiple memory arrays, such that successive data pages in the sequence are stored in alternation in a first number of the memory arrays. The initially-stored data pages are rearranged in the memory so as to store the successive data pages in the sequence in a second number of the memory arrays, which is less than the first number. The rearranged data pages are read from the second number of the memory arrays. | 09-26-2013 |
20130268824 | ADAPTIVE OVER-PROVISIONING IN MEMORY SYSTEMS - A method for data storage includes, in a memory that includes multiple memory blocks, specifying at a first time a first over-provisioning overhead, and storing data in the memory while retaining in the memory blocks memory areas, which do not hold valid data and whose aggregated size is at least commensurate with the specified first over-provisioning overhead. Portions of the data from one or more previously-programmed memory blocks containing one or more of the retained memory areas are compacted. At a second time subsequent to the first time, a second over-provisioning overhead, different from the first over-provisioning overhead, is specified, and data storage and data portion compaction is continued while complying with the second over-provisioning overhead. | 10-10-2013 |
20140122787 | ADAPTIVE OVER-PROVISIONING IN MEMORY SYSTEMS - A method for data storage includes, in a memory that includes multiple memory blocks, specifying at a first time a first over-provisioning overhead, and storing data in the memory while retaining in the memory blocks memory areas, which do not hold valid data and whose aggregated size is at least commensurate with the specified first over-provisioning overhead. Portions of the data from one or more previously-programmed memory blocks containing one or more of the retained memory areas are compacted. At a second time subsequent to the first time, a second over-provisioning overhead, different from the first over-provisioning overhead, is specified, and data storage and data portion compaction is continued while complying with the second over-provisioning overhead. | 05-01-2014 |
20140157090 | Programming Schemes for Multi-Level Analog Memory Cells - A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits. | 06-05-2014 |
20140269051 | PROGRAMMING SCHEMES FOR 3-D NON-VOLATILE MEMORY - A method includes providing data for storage in a memory, which includes multiple analog memory cells arranged in a three-dimensional (3-D) configuration having a first dimension associated with bit lines, a second dimension associated with word lines, and a third dimension associated with sections. The data is stored in the memory cells in accordance with a programming order that alternates among the sections, including storing a first portion of the data in a first section, then storing a second portion of the data in a second section different from the first section, and then storing a third portion of the data in the first section. | 09-18-2014 |
20140313832 | ENHANCED DATA STORAGE IN 3-D MEMORY USING STRING-SPECIFIC SOURCE-SIDE BIASING - A method includes storing data in a memory, which includes multiple strings of analog memory cells arranged in a three-dimensional (3-D) configuration having a first dimension associated with bit lines, a second dimension associated with word lines and a third dimension associated with sections, such that each string is associated with a respective bit line and a respective section and includes multiple memory cells that are connected to the respective word lines. For a group of the strings, respective values of a property of the strings in the group are evaluated. Source-side voltages are calculated for the respective strings in the group, depending on the respective values of the property, and respective source-sides of the strings in the group are biased with the corresponding source-side voltages. A memory operation is performed on the strings in the group while the strings are biased with the respective source-side voltages. | 10-23-2014 |
20140328131 | INTER-WORD-LINE PROGRAMMING IN ARRAYS OF ANALOG MEMORY CELLS - A method includes selecting a word line for programming in an array of analog memory cells that are arranged in rows associated with respective word lines and columns associated with respective bit lines. Word-line voltages, which program the memory cells in the selected word line, are applied to the respective word lines. Bit-line voltages, which cause one or more additional memory cells outside the selected word line to be programmed as a result of programming the selected word line, are applied to the respective bit lines. Using the applied word-line and bit-line voltages, data is stored in the memory cells in the selected word line and the additional memory cells are simultaneously programmed. | 11-06-2014 |
20140331106 | CALCULATION OF ANALOG MEMORY CELL READOUT PARAMETERS USING CODE WORDS STORED OVER MULTIPLE MEMORY DIES - A method includes, in a memory that includes two or more memory units, storing a code word of an Error Correction Code (ECC) that is representable by a plurality of check equations, such that a first part of the code word is stored in a first memory unit and a second part of the code word is stored in a second memory unit. A subset of the check equations, which operate only on code word bits belonging to the first part stored in the first memory unit, is identified. The first part of the code word is retrieved from the first memory unit, and a count of the check equations in the identified subset that are not satisfied by the retrieved first part of the code word is evaluated. One or more readout parameters, for readout from the first memory unit, are set depending on the evaluated count. | 11-06-2014 |
20140340951 | APPLICATIONS FOR INTER-WORD-LINE PROGRAMMING - A method includes, in an array of analog memory cells that are arranged in rows associated with respective word lines, reading a first group of the memory cells in a selected word line, including one or more memory cells that store a status of at least one word line in the array other than the selected word line. A readout configuration for a second group of the memory cells is set responsively to the read status. The second group of the memory cells is read using the readout configuration. | 11-20-2014 |
20140344519 | DISTORTION CANCELLATION IN 3-D NON-VOLATILE MEMORY - A method in a memory that includes multiple analog memory cells arranged in a three-dimensional (3-D) configuration, includes identifying multiple groups of potentially-interfering memory cells that potentially cause interference to a group of target memory cells. Partial distortion components, which are inflicted by the respective groups of the potentially-interfering memory cells on the target memory cells, are estimated. The partial distortion components are progressively accumulated so as to produce an estimated composite distortion affecting the target memory cells, while retaining only the composite distortion and not the partial distortion components. The target memory cells are read, and the interference in the target memory cells is canceled based on the estimated composite distortion. | 11-20-2014 |
20140344524 | ADAPTIVE OVER-PROVISIONING IN MEMORY SYSTEMS - A method for data storage includes, in a memory that includes multiple memory blocks, specifying at a first time a first over-provisioning overhead, and storing data in the memory while retaining in the memory blocks memory areas, which do not hold valid data and whose aggregated size is at least commensurate with the specified first over-provisioning overhead. Portions of the data from one or more previously-programmed memory blocks containing one or more of the retained memory areas are compacted. At a second time subsequent to the first time, a second over-provisioning overhead, different from the first over-provisioning overhead, is specified, and data storage and data portion compaction is continued while complying with the second over-provisioning overhead. | 11-20-2014 |
20140347924 | DATA STORAGE IN ANALOG MEMORY CELLS ACROSS WORD LINES USING A NON-INTEGER NUMBER OF BITS PER CELL - A method for data storage includes accepting data for storage in an array of analog memory cells, which are arranged in rows associated with respective word lines. At least a first page of the data is stored in a first row of the array, and at least a second page of the data is stored in a second row of the array, having a different word line from the first row. After storing the first and second pages, a third page of the data is stored jointly in the first and second rows. | 11-27-2014 |
20140355347 | MITIGATING RELIABILITY DEGRADATION OF ANALOG MEMORY CELLS DURING LONG STATIC AND ERASED STATE RETENTION - A method in a non-volatile memory, which includes multiple memory cells that store data using a predefined set of programming levels including an erased level, includes receiving a storage operation indicating a group of the memory cells that are to be retained without programming for a long time period. The memory cells in the group are set to a retention programming level that is different from the erased level. Upon preparing to program the group of memory cells with data, the group of memory cells is erased to the erased level and the data is then programmed in the group of memory cells. | 12-04-2014 |
20150019899 | MEMORY SYSTEM WITH IMPROVED BUS TIMING CALIBRATION - A method includes communicating between a memory controller and multiple memory devices over an interface that includes at least a control signal and an information signal. For each memory device, a respective individual skew parameter, which is indicative of a timing misalignment between the control signal and the information signal when communicating with that memory device, is produced. The respective individual skew parameter is stored coupled to each memory device. The timing misalignment is corrected at the memory device using the stored individual timing skew. | 01-15-2015 |