Patent application number | Description | Published |
20100148872 | POWER AMPLIFIER HAVING TRANSFORMER - A power amplifier amplifying and compositing differential signals and capable of suppressing harmonics is provided. The power amplifier includes first amplifiers amplifying a first input signal and a second input signal, which are differential signals, a first coil receiving the first input signal and the second input signal amplified by the first amplifiers, a second coil magnetically coupled with the first coil and outputting a composite signal of the amplified first input signal and second input signal, a third coil magnetically coupled with the second coil, and a first capacitor coupled between both ends of the third coil, wherein one end of the first capacitor is coupled to a ground node. | 06-17-2010 |
20130140582 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - The present invention relates to a semiconductor device and a method for manufacturing the same. A RESURF layer ( | 06-06-2013 |
20130285140 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A trench-gate type semiconductor device that can prevent breakdown of a gate insulating film caused by a displacement current flowing into a protective diffusion layer at a portion of a trench underlying a gate electrode at a turn-off time and simultaneously improves a current density by narrowing a cell pitch. The semiconductor device includes a gate electrode embedded into a trench penetrating a base region. The gate electrode is disposed into a lattice shape in a planar view, and a protective diffusion layer is formed in a drift layer at the portion underlying thereof. At least one of blocks divided by the gate electrode is a protective contact region on which the trench is entirely formed. A protective contact for connecting the protective diffusion layer at a bottom portion of the trench and a source electrode is disposed on the protective contact region. | 10-31-2013 |
20140001472 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME | 01-02-2014 |
20150108564 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A source region of a MOSFET includes: a source contact region connected to a source pad; a source extension region adjacent to a channel region in a well region; and a source resistance control region arranged between the source extension region and the source contact region. The source resistance control region is different in an impurity concentration from the source extension region and the source contact region. These three regions are connected in series between the source pad and the channel region in the well region. | 04-23-2015 |
20150236119 | SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A silicon-carbide semiconductor device that relaxes field intensity in a gate insulating film, and that has a low ON-resistance. The silicon-carbide semiconductor device includes: an n-type silicon-carbide substrate; a drift layer formed on a topside of the n-type silicon-carbide substrate; a trench formed in the drift layer and that includes therein a gate insulating film and a gate electrode; a p-type high-concentration well region formed parallel to the trench with a spacing therefrom and that has a depth larger than that of the trench; and a p-type body region formed to have a depth that gradually increases when nearing from a position upward from the bottom end of the trench by approximately the thickness of the gate insulating film at the bottom of the trench toward the lower end of the p-type high-concentration well region. | 08-20-2015 |
20150287789 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A silicon carbide semiconductor device includes trenches formed in a lattice shape on the surface of a silicon carbide substrate on which a semiconductor layer is formed, and gate electrodes formed inside of the trenches via a gate insulating film. The depth of the trenches is smaller in a portion where the trenches are crossingly formed than in a portion where the trenches are formed in parallel to each other. Consequently, the silicon carbide semiconductor device is obtained that increases a withstand voltage between the gate electrodes and corresponding drain electrodes on the semiconductor device rear surface to prevent dielectric breakdown and, at the same time, has a large area of the gate electrodes, high channel density per unit area, and low ON resistance. | 10-08-2015 |
20150333126 | SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - It is an object of the present invention to provide a silicon carbide semiconductor device that reduces an influence of an off-angle of a silicon carbide substrate on characteristics of the semiconductor device and achieves improved operational stability and reduced resistance. In a trench-gate silicon carbide MOSFET semiconductor device formed on the silicon carbide semiconductor substrate having the off-angle, a low-channel doped region is provided on a first sidewall surface side of the trench in a well region, and a high-channel doped region having an effective acceptor concentration lower than that of the low-channel doped region is provided on a second sidewall surface side of the trench in the well region. | 11-19-2015 |