Patent application number | Description | Published |
20080214082 | Method for manufacturing field emission electron source - A method for manufacturing a field emission electron source, the method comprising the steps of: preparing a substrate, a carbon nanotubes slurry, and a conductive slurry; applying a conductive slurry layer onto the substrate; applying a layer of carbon nanotubes slurry onto the conductive slurry layer; and solidifying the substrate under a temperature of 300 to 600 degrees centigrade so as to form the field emission electron source. | 09-04-2008 |
20080220242 | ANODIC STRUCTURE AND METHOD FOR MANUFACTURING SAME - A method for manufacturing an anodic structure includes the steps of: providing a carbon nanotube slurry and a glass structure; applying a carbon nanotube slurry layer onto the glass structure; drying the carbon nanotube slurry layer on the glass structure; applying a phosphor layer on the carbon nanotube slurry layer; and solidifying the carbon nanotube slurry layer and the phosphor layer on the glass structure at an approximate temperature of 300˜500° C. and under protection of an inert gas to form the anodic structure. | 09-11-2008 |
20080278173 | IONIZATION VACUUM GAUGE - An ionization vacuum gauge includes a linear cathode, an anode, and an ion collector. The linear cathode, the anode, and the ion collector are concentrically aligned and arranged from center to outer, in that order. The linear cathode includes a linear base and a field emission film deposited coating on the linear base. The ionization vacuum gauge with low power consumption can be used in a high vacuum system and/or some special vacuum system that is sensitive to heat and light. Such a gauge can be used to determine, simply yet accurately, pressures at relatively high vacuum levels. | 11-13-2008 |
20090066216 | FIELD EMISSION LIGHT SOURCE - A field emission light source includes a foundation, a supporting member, a transparent shell, an anode, and a cathode. The transparent shell is disposed on the foundation, and thus defines a closed space in the transparent shell. The supporting member includes a first end and a second end opposite to the first end. The first end is connected to the foundation, and the second end is disposed at a center portion of the closed space. The cathode includes a plurality of carbon nanotubes. The cathode is disposed on the second end of the supporting member. | 03-12-2009 |
20090115309 | Pixel element for field emission display - A pixel element for field emission display includes a sealed container having a light permeable portion, an anode, a cathode, a phosphor layer formed on an end surface of the anode, and a CNT string electrically connected to and in contact with the cathode with an emission portion of the CNT string suspending. The phosphor layer is opposite to the light permeable portion, and the emission portion is corresponding to the phosphor layer. Some of CNT bundles in the CNT string are taller than and project over the adjacent CNT bundles, and each of projecting CNT bundles functions as an electron emitter. The anode, the cathode, the phosphor layer and the CNT string are enclosed in the sealed container. The luminance of the pixel element is enhanced at a relatively low voltage. | 05-07-2009 |
20090134772 | Color field emission display having carbon nanotubes - A color field emission display includes a sealed container having a light permeable portion and at least one color element enclosed in the sealed container. The color element includes a cathode, at least two anodes, at least two phosphor layers and at least two CNT strings. The phosphor layers are formed on the end surfaces of the anode. The CNT strings are electrically connected to and in contact with the cathode with the emission portion thereof suspending. The phosphor layers are opposite to the light permeable portion, and one emission portion is corresponding to one phosphor layer. The luminance of the color FED is enhanced at a relatively low voltage. | 05-28-2009 |
20090134773 | Color pixel element for field emission display - A color pixel element for field emission display includes a sealed container having a light permeable portion, at least two anodes, a cathode, at least two phosphor layers formed on the end surfaces of the anodes, and at least two CNT strings electrically connected to and in contact with the cathode with the emission portions of the CNT strings suspending. The phosphor layers are opposite to the light permeable portion, and one emission portion is corresponding to one phosphor layer. In each CNT string, some of CNT bundles are taller than and project over the adjacent CNT bundles, and each of projecting CNT bundles functions as an electron emitter. The anodes, the cathode, the phosphor layers and the CNT strings are enclosed in the sealed container. The luminance of the color pixel element is enhanced at a relatively low voltage. | 05-28-2009 |
20090195139 | Electron emission apparatus and method for making the same - An electron emission apparatus includes an insulating substrate, one or more grids located on the substrate, wherein the one or more grids includes: a first, second, third and fourth electrode that are located on the periphery of the gird, wherein the first and the second electrode are parallel to each other, and the third and fourth electrodes are parallel to each other; and one or more electron emission units located on the substrate. Each the electron unit includes at least one electron emitter, the electron emitter includes a first end, a second end and a gap; wherein the first end is electrically connected to one of the plurality of the first electrodes and the second end is electrically connected to one of the plurality of the third electrodes; two electron emission ends are located in the gap, and each electron emission end includes a plurality of electron emission tips. | 08-06-2009 |
20090195140 | Electron emission apparatus and method for making the same - An electron emission apparatus includes an insulating substrate, one or more grids located on the substrate, wherein the one or more grids includes: a first, second, third and fourth electrode that are located on the periphery of the gird, wherein the first and the second electrode are parallel to each other, and the third and fourth electrodes are parallel to each other; and one or more electron emission units located on the substrate. Each the electron unit includes at least one electron emitter, and the electron emitter includes a first end, a second end and a gap. At least one electron emission end is located in the gap. | 08-06-2009 |
20090236961 | Field emission electron source having carbon nanotubes - A field emission electron source includes a CNT needle and a conductive base. The CNT needle has an end portion and a broken end portion; the end portion is contacted with and electrically connected to a surface of the conductive base. The CNTs at the broken end portion form a taper-shape structure, wherein one CNT protrudes and is higher than the adjacent CNTs. | 09-24-2009 |
20090239072 | Carbon nanotube needle and method for making the same - A carbon nanotube needle comprising: an end portion and a broken end portion, the broken end portion comprising a single carbon nanotube tip. A method for manufacturing a carbon nanotube needle, the method comprising the steps of: (a) providing a carbon nanotube film comprising of a plurality of commonly aligned carbon nanotubes, a first electrode, and a second electrode; (b) fixing the carbon nanotube film to the first electrode and the second electrode, the carbon nanotube film extending from the first electrode to the second electrode; (c) treating the carbon nanotube film with an organic solvent to form at least one carbon nanotube string; and (d) applying a voltage to the carbon nanotube string until the carbon nanotube string snaps. | 09-24-2009 |
20090239439 | Method for manufacturing field emission electron source having carbon nanotubes - A method for manufacturing a field emission electron source includes: (a) Providing a carbon nanotube (CNT) film, the CNT film has a plurality of CNTs, the CNTs are aligned along a same direction; a first electrode and a second electrode. (b) Fixing the two opposite sides of the CNT film on the first electrode and the second electrode, the CNTs in the CNT film extending from the first electrode to the second electrode. (c) Treating the CNT film with an organic solvent to form at least one CNT string. (d) Applying a voltage between two opposite ends of the CNT string until the CNT string snaps, thereby at least one CNT needle, the CNT needle has an end portion and a broken end portion. (e) Securing the CNT needle to a conductive base by attaching the end portion of the CNT needle to the conductive base. | 09-24-2009 |
20090289555 | ELECTRON EMISSION DEVICE COMPRISING CARBON NANOTUBES YARN AND METHOD FOR GENERATING EMISSION CURRENT - An exemplary electron emission device includes an electron emitter, an anode opposite to and spaced apart from the electron emitter, a first power supply circuit, and a second power supply circuit. The first power supply circuit is configured for electrically connecting the electron emitter and the anode with a power supply to generate an electric field between the electron emitter and the anode. The second power supply circuit is configured for electrically connecting the electron emitter with a power supply to supply a heating current for heating the electron emitter whereby electrons emit therefrom. Methods for generating an emission current with a relatively higher stability also are provided. | 11-26-2009 |
20090309478 | Emitter and method for manufacturing same - An emitter includes an electrode, and a number of carbon nanotubes fixed on the electrode. The carbon nanotubes each have a first end and a second end. The first end is electrically connected to the substrate and the second end has a needle-shaped tip. Two second ends of carbon nanotubes have a larger distance therebetween than that of the first ends thereof, which is advantageous for a better screening affection. Moreover, the needle-shaped tip of the second ends of the carbon nanotube has a lower size and higher aspect ratio than the conventional carbon nanotube, which, therefore, is attributed to bear a larger emission current. | 12-17-2009 |
20090311940 | Method for making field emission device - A method for making a field emission device includes the following steps. A base and at least one carbon nanotube yarn are provided. The at least one carbon nanotube yarn is attached to the base. The at least one carbon nanotube yarn includes a plurality of carbon nanotube segments. The carbon nanotube segments are joined end to end by van der Waals attractive force. | 12-17-2009 |
20100007263 | Field emission cathode and field emission display employing with same - A field emission display includes a field emission cathode and an anode electrode plate arranged above the field emission cathode. The filed emission cathode includes a substrate, and a plurality of electron-emitting areas spaced apart from each other and arranged on the substrate. Each of the electron-emitting areas includes a cathode, a gate electrode, and a number of first and second conductive lines. The cathode includes a first conductive substrate and a first carbon nanotube assembly having a plurality of carbon nanotubes each having a cathode emitting end having a needle-shaped tip. The gate electrode is faced to the cathode emitting end. The taper-shaped tips of the cathode emitting ends and the gate have a small size and higher aspect ratio, allowing them to bear a larger emission current at a lower voltage. | 01-14-2010 |
20100084957 | FIELD EMISSION ELECTRON SOURCE HAVING CARBON NANOTUBE AND MANUFACTURING METHOD THEREOF - A field emission electron source ( | 04-08-2010 |
20100104735 | Method for manufacturing a one-dimensional nano-structure-based device - A method for manufacturing a one-dimensional nano-structure-based device includes the steps of preparing a solution ( | 04-29-2010 |
20100123267 | Method for stretching carbon nanotube film - A method for stretching a carbon nanotube film includes providing one or more carbon nanotube films and one or more elastic supporters, attaching at least one portion of the one or more carbon nanotube films to the one or more elastic supporters, and stretching the elastic supporters. | 05-20-2010 |
20100124645 | Carbon nanotube film - A carbon nanotube film includes a plurality of carbon nanotube strings and one or more carbon nanotubes. The plurality of carbon nanotube strings are separately arranged and located side by side. Distances between adjacent carbon nanotube strings are changed when a force is applied. One or more carbon nanotubes are located between adjacent carbon nanotube strings. | 05-20-2010 |
20100124646 | Carbon nanotube film - A carbon nanotube film includes a plurality of first carbon nanotubes and a plurality of second carbon nanotubes. The first carbon nanotubes are orientated primarily along a same direction. The second carbon nanotubes have different orientations from that of the plurality of first carbon nanotubes. Each of at least one portion of the second carbon nanotubes contacts with at least two adjacent first carbon nanotubes. | 05-20-2010 |
20100201252 | FIELD EMISSION LAMP - A field emission lamp includes a transparent glass tube, a cathode, and an anode. The anode and cathode are both disposed in the transparent glass tube. The cathode includes an electron emission layer. The anode includes a carbon nanotube transparent conductive film located on an inner wall of the transparent glass tube and a fluorescent layer located on the carbon nanotube transparent conductive film. | 08-12-2010 |
20110027464 | METHOD FOR MAKING CATHODE OF EMISSION DOUBLE-PLANE LIGHT SOURCE AND EMISSION DOUBLE-PLANE LIGHT SOURCE - A method for making a field emission double-plane light source includes following steps. A metallic based network, a pair of anodes, and a number of supporting members, are provided. Each of the anodes includes an anode conductive layer and a fluorescent layer formed on the anode conductive layer. A number of carbon nanotubes, metallic conductive particles, glass particles and getter powders are mixed to form an admixture. The admixture is coated on an upper surface and a bottom surface of the network. The admixture on the upper and bottom surfaces of the network is dried and baked. The anodes, the cathode, and the supporting members are assembled and sealed to obtain the field emission double-plane light source. | 02-03-2011 |
20110062856 | COLOR FIELD EMISSION DISPLAY HAVING CARBON NANOTUBES - A color field emission display includes a sealed container and a color element enclosed in the sealed container. The color element includes a cathode, an anode, a phosphor layer and a carbon nanotube string. The anode is located spaced from the cathode. The phosphor layer is formed on an end surface of the anode. The carbon nanotube string has a first end electrically connected to the cathode and an opposite second end functioning as an emission portion. The second end includes a plurality of taper carbon nanotube bundles. | 03-17-2011 |
20110101845 | FIELD EMISSION CATHODE DEVICE AND DISPLAY USING THE SAME - A field emission cathode device includes an insulative substrate, a plurality of cathode electrodes, and a plurality of electron emission units. The insulative substrate has a top surface and a bottom surface. The insulative substrate defines a plurality of openings. The cathode electrodes are located on the bottom surface. Each of the electron emission units has a first portion secured between the insulative substrate and one corresponding cathode electrode and a second portion received in one corresponding opening. | 05-05-2011 |
20110101846 | FIELD EMISSION ELECTRON SOURCE HAVING CARBON NANOTUBES - A field emission electron source having carbon nanotubes includes a CNT string and a conductive base. The CNT string has an end portion and a broken end portion. The end portion is contacted with and electrically connected to the surface of the conductive base. The CNTs at the broken end portion form a tooth-shape structure, wherein some CNTs protrude and higher than the adjacent CNTs. Each protruded CNT functions as an electron emitter. | 05-05-2011 |
20110181171 | ELECTRON EMISSION APPARATUS AND METHOD FOR MAKING THE SAME - An electron emission apparatus includes an insulating substrate, one or more grids located on the substrate, wherein the one or more grids includes: a first, second, third and fourth electrode that are located on the periphery of the grid, wherein the first and the second electrode are parallel to each other, and the third and fourth electrodes are parallel to each other; and one or more electron emission units located on the substrate. Each the electron unit includes at least one electron emitter, the electron emitter includes a first end, a second end and a gap; wherein the first end is electrically connected to one of the plurality of the first electrodes and the second end is electrically connected to one of the plurality of the third electrodes; two electron emission ends are located in the gap, and each electron emission end includes a plurality of electron emission tips. | 07-28-2011 |
20110237148 | METHOD FOR MAKING FIELD EMISSION CATHODE DEVICE - A method for making a field emission cathode device is presented. First, an insulative substrate is provided. The insulative substrate includes a first surface and a second surface opposite to the first surface. The insulative substrate defines a number of openings extending through from the first surface to the second surface. Second, at least one electron emitter is provided corresponding to each of the number of openings. The electron emitter includes a fixing portion and an electron emission portion connecting to the fixing portion. The fixing portion is fixed on the first surface, and the electron emission portion extends from the fixing portion into the number of openings. Third, a number of cathode electrodes are formed on the first surface to fix the fixing portion between the insulative substrate and the cathode electrodes. | 09-29-2011 |
20110304260 | FIELD EMISSION CATHODE DEVICE AND DISPLAY USING THE SAME - A field emission cathode device includes an insulative substrate, a number of cathode electrodes, and a number of liner electron emission units. The insulative substrate has a top surface and a bottom surface. The insulative substrate defines a number of openings. The cathode electrodes are located on the bottom surface. Each of the linear electron emission units has a first portion secured between the insulative substrate and one corresponding cathode electrode and a second portion received in one corresponding opening. | 12-15-2011 |
20120043004 | APPARATUS FOR MAKING CARBON NANOTUBE COMPOSITE WIRE STRUCTURE - An apparatus for making a carbon nanotube composite structure includes a supply unit, a wrapping unit, and a collecting unit. The supply unit is configured to supply a linear structure. The wrapping unit includes a drive mechanism, a hollow rotating shaft, and a face plate. The drive mechanism is mounted on a first end of the hollow rotating shaft to drive the hollow rotating shaft. The face plate is fixed on a second end of the hollow rotating shaft and loads a carbon nanotube array with a growing substrate. The carbon nanotube array forms a carbon nanotube structure. The wrapping unit winds the carbon nanotube structure around the linear structure. The collecting unit pulls the linear structure and collects the carbon nanotube composite wire structure. | 02-23-2012 |
20120043012 | METHOD FOR MAKING MARCO-SCALE CARBON NANOTUBE TUBE STRUCTURE - A method for making a macro-scale carbon nanotube tube structure includes the following steps. A linear structure and a carbon nanotube structure are provided. The carbon nanotube structure includes at least one carbon nanotube film or at least one carbon nanotube wire. The carbon nanotube structure is wrapped around the linear structure to form a carbon nanotube composite structure. The linear structure is removed from the carbon nanotube composite structure, thereby forming the macro-scale carbon nanotube tube structure. | 02-23-2012 |
20120043690 | MTHODE FOR MAKING CARBON NANOTUBE COMPOSITE WIRE STRUCTURE - A method for making a carbon nanotube composite wire structure comprises the following steps. A supply unit, a collecting unit, and a wrapping unit are provided. The wrapping unit comprises a hollow rotating shaft, and a face plate mounted on the hollow rotating shaft. A linear structure is provided by the supply unit. The linear structure passes through the hollow rotating shaft and is fixed on a collecting unit. A carbon nanotube structure is drawn from a carbon nanotube array. The carbon nanotube array is loaded on the face plate. One end of the carbon nanotube structure is adhered to the linear structure. The face plate is rotated, and the linear structure is pulled along a fixed direction. As such the carbon nanotube structure is wrapping around the linear structure | 02-23-2012 |
20120045599 | CARBON NANOTUBE COMPOSITE HOLLOW STRUCTURE AND METHOD FOR MAKING THE SAME - A macro-scale carbon nanotube composite hollow structure includes a plurality of carbon nanotubes and a polymer. The carbon nanotubes are combined with each other via van der Waals attractive force. The polymer is at least partly attached to the carbon nanotubes. A method for making the carbon nanotube composite hollow structure includes the steps of providing a linear structure and a carbon nanotube structure including at least one carbon nanotube film or at least one carbon nanotube wire, wrapping the carbon nanotube structure around the linear structure to form a first carbon nanotube composite structure, applying a polymer liquid to the first carbon nanotube composite structure such that a second carbon nanotube composite structure is formed, and removing the linear structure from the second carbon nanotube composite structure. | 02-23-2012 |
20120045644 | CARBON NANOTUBE WIRE COMPOSITE STRUCTURE AND METHOD FOR MAKING THE SAME - A carbon nanotube composite wire structure includes a conductive thread structure and a carbon nanotube layer. The carbon nanotube layer can be wrapped around the conductive thread structure from one end of the conductive thread structure to the other end of the conductive thread structure. The carbon nanotube layer is a consecutive layer structure and comprises of a plurality of carbon nanotubes. A method for making the above mentioned carbon nanotube composite wire structure is also provided. | 02-23-2012 |
20120045645 | MARCO-SCALE CARBON NANOTUBE TUBE STRUCTURE - A macro-scale carbon nanotube tube structure is provided. The carbon nanotube tube structure is a tube-shaped structure. The tube-shaped structure includes a plurality of carbon nanotubes combined with each other by van der Waals force. The carbon nanotubes are substantially parallel to the outer surface of the tube-shaped structure, and substantially spirally arranged around a linear axis of the tube-shaped structure by van der Waals force therebetween. | 02-23-2012 |
20120125656 | CABLE - A cable includes a conductive core, an insulating layer, a shielding layer, and a sheath. The sheath coats the shielding layer. The shielding layer coats the insulating layer. The insulating layer coats the conductive wire. The conductive core includes a conductive wire and a carbon nanotube film comprising a plurality of carbon nanotubes. The carbon nanotubes coat the conductive core. | 05-24-2012 |
20120133266 | ELELCTRON EMITTER AND ELECTRON EMISSION ELEMENT - The present disclosure provides an electron emitter. The electron emitter includes a carbon nanotube pipe. One end of the carbon nanotube pipe has a plurality of carbon nanotube peaks. The present disclosure also provides an electron emission element. The electron emission element comprises a conductive base and a carbon nanotube pipe. | 05-31-2012 |
20120133267 | ELELCTRON EMITTER AND ELECTRON EMISSION ELEMENT - The present disclosure provides an electron emitter. The electron emitter includes a carbon nanotube linear compound. The carbon nanotube linear compound includes a conductive linear support and a carbon nanotube pipe. The conductive linear support is located in the carbon nanotube pipe. A plurality of carbon nanotube peaks extends from one end of the electron emitter. | 05-31-2012 |
20120133269 | PIXEL TUBE FOR FIELD EMISSION DISPLAY - A pixel tube for field emission display includes a sealed container, an anode, a phosphor, and a cathode. The sealed container has a light permeable portion. The anode is located on the light permeable portion. The phosphor layer is located on the anode. The cathode is spaced from the anode and includes a cathode emitter. The cathode emitter includes a carbon nanotube pipe. One end of the carbon nanotube pipe has a plurality of carbon nanotube peaks. | 05-31-2012 |
20120133270 | FIELD EMISSION UNIT AND PIXEL TUBE FOR FIELD EMISSION DISPLAY - A pixel tube for field emission display includes a sealed container, an anode, a phosphor, and a cathode. The sealed container has a light permeable portion. The anode is located in the sealed container and spaced from the light permeable portion. The phosphor layer is located on the anode. The cathode is spaced from the anode and includes a cathode emitter. The cathode emitter includes a carbon nanotube pipe. One end of the carbon nanotube pipe has a plurality of carbon nanotube peaks. | 05-31-2012 |
20120135662 | METHOD FOR MAKING ELELCTRON EMITTER - The present disclosure provides a method for making electron emitter includes the following steps. First, a linear support is provided. Second, at least one carbon nanotube film or at least one carbon nanotube wire is provided. Third, the at least one carbon nanotube film or wire is wrapped around the linear support. Fourth, the linear support is removed to obtain a carbon nanotube hollow cylinder. Fifth, the carbon nanotube hollow cylinder is fused. | 05-31-2012 |
20120169347 | VACUUM IONIZATION GAUGE - A vacuum ionization gauge includes a cold cathode, a shield electrode, an anode ring, and a collector. The shield electrode includes a receiving space. The anode ring is located in the receiving space of the shield electrode. The cold cathode includes a field emission unit and a grid electrode corresponding to the field emission unit. The field emission unit includes at least one emitter. Each of the at least one emitter includes a carbon nanotube pipe. The carbon nanotube pipe has a first end, a second end, and a main body connecting to the first end and the second end. The second end has a plurality of carbon nanotube peaks. | 07-05-2012 |
20120174855 | METHOD FOR MAKING EPITAXIAL STRUCTURE - A method for making an epitaxial structure is provided. The method includes following steps. A substrate having an epitaxial growth surface is provided. A buffer layer is formed on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. An epitaxial layer is epitaxially grown on the buffer layer. The substrate is removed. | 07-12-2012 |
20120174856 | METHOD FOR MAKING EPITAXIAL STRUCTURE - A method for making an epitaxial structure is provided. The method includes the following steps. A substrate is provided. The substrate has an epitaxial growth surface for growing epitaxial layer. A carbon nanotube layer is placed on the epitaxial growth surface. An epitaxial layer is epitaxially grown on the epitaxial growth surface. The carbon nanotube layer is removed. The carbon nanotube layer can be removed by heating. | 07-12-2012 |
20120174858 | BASE AND METHOD FOR MAKING EPITAXIAL STRUCTURE USING THE SAME - A base for making an epitaxial structure is provided. The base includes a substrate and a carbon nanotube layer. The substrate has an epitaxial growth surface. The carbon nanotube layer is located on the epitaxial growth surface. The carbon nanotube layer defines a plurality of apertures to expose part of the epitaxial growth surface so that an epitaxial layer can grow from an exposed epitaxial growth surface and through the apertures. A method for making an epitaxial structure using the base is also provided. | 07-12-2012 |
20120175606 | EPITAXIAL STRUCTURE - An epitaxial structure is provided. The epitaxial structure includes a substrate, an epitaxial layer and a carbon nanotube layer. The epitaxial layer is located on the substrate. The carbon nanotube layer is located between the substrate and the epitaxial layer. The carbon nanotube layer can be a carbon nanotube film drawn from a carbon nanotube array and including a plurality of successive and oriented carbon nanotubes joined end-to-end by van der Waals attractive force therebetween. | 07-12-2012 |
20120175629 | SEMICONDUCTOR EPITAXIAL STRUCTURE - A semiconductor epitaxial structure is provided. The semiconductor epitaxial structure includes a substrate, a doped semiconductor epitaxial layer, and a carbon nanotube layer. The doped semiconductor epitaxial layer is located on the substrate. The carbon nanotube layer is located between the substrate and the doped semiconductor epitaxial layer. The carbon nanotube layer can be a carbon nanotube film drawn from a carbon nanotube array and including a plurality of successive and oriented carbon nanotubes joined end-to-end by van der Waals attractive force therebetween. | 07-12-2012 |
20120175742 | EPITAXIAL STRUCTURE AND METHOD FOR MAKING THE SAME - An epitaxial structure and a method for making the same are provided. The epitaxial structure includes a substrate, an epitaxial layer and a carbon nanotube layer. The epitaxial layer is located on the substrate. The carbon nanotube layer is located in the epitaxial layer. The method includes following steps. A substrate having an epitaxial growth surface is provided. A carbon nanotube layer is suspended above the epitaxial growth surface. An epitaxial layer is epitaxially grown from the epitaxial growth surface to enclose the carbon nanotube layer therein. | 07-12-2012 |
20120175743 | EPITAXIAL STRUCTURE - An epitaxial structure is provided. The epitaxial structure includes a substrate, an first epitaxial layer, a second epitaxial layer, a first carbon nanotube layer and a second carbon nanotube layer. The first epitaxial layer is located on the substrate. The first carbon nanotube layer is located between the substrate and the first epitaxial layer. The second epitaxial layer is located on the first epitaxial layer. The second carbon nanotube layer is located between the first epitaxial layer and the second epitaxial layer. | 07-12-2012 |
20120178242 | METHOD FOR MAKING EPITAXIAL STRUCTURE - A method for making epitaxial structure is provided. The method includes providing a substrate having an epitaxial growth surface, placing a carbon nanotube layer on the epitaxial growth surface, and epitaxially growing an epitaxial layer on the epitaxial growth surface. The carbon nanotube layer can be a carbon nanotube film drawn from a carbon nanotube array and including a plurality of successive and oriented carbon nanotubes joined end-to-end by van der Waals attractive force therebetween. | 07-12-2012 |
20120178243 | METHOD FOR MAKING SEMICONDUCTOR EPITAXIAL STRUCTURE - A method for making a semiconductor epitaxial structure is provided. The method includes growing a substrate having an epitaxial growth surface, placing a carbon nanotube layer on the epitaxial growth surface, epitaxially growing a doped semiconductor epitaxial layer on the epitaxial growth surface. The carbon nanotube layer can be suspended above the epitaxial growth surface. | 07-12-2012 |
20120178244 | METHOD FOR MAKING EPITAXIAL STRUCTURE - A method for making an epitaxial structure is provided. The method includes the following steps. A substrate is provided. The substrate has an epitaxial growth surface for growing epitaxial layer. A carbon nanotube layer is placed on the epitaxial growth surface. A plurality of epitaxial crystal grains spaced from each other is epitaxially grown on the epitaxial growth surface. Also, the carbon nanotube layer can be further removed. | 07-12-2012 |
20120178245 | METHOD FOR MAKING EPITAXIAL STRUCTURE - A method for making an epitaxial structure is provided. The method includes the following steps. A substrate is provided. The substrate has an epitaxial growth surface for growing epitaxial layer. A first carbon nanotube layer is placed on the epitaxial growth surface. A first epitaxial layer is epitaxially grown on the epitaxial growth surface. A second carbon nanotube layer is placed on the first epitaxial layer. A second epitaxial layer is epitaxially grown on the first epitaxial layer. | 07-12-2012 |
20120178248 | METHOD FOR MAKING EPITAXIAL STRUCTURE - A method for making an epitaxial structure is provided. The method includes the following steps. A substrate having an epitaxial growth surface is provided. A buffer layer is formed on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. An epitaxial layer is epitaxially grown on the buffer layer. The substrate and the carbon nanotube layer are removed. | 07-12-2012 |
20120194058 | FIELD EMISSION ELECTRONIC DEVICE - The present disclosure provides a field emission electronic device. The field emission electronic device includes an insulating substrate, a first electrical conductor located on surface of the insulating substrate, a number of electron emitters connected to the first electrical conductor, a second electrical conductor spaced apart from and insulated from the first electrical conductor. Each of the number of electron emitters includes at least one electron emitter. Each of the electron emitters includes a carbon nanotube pipe. The carbon nanotube pipe includes a first end, a second end and a main body connecting the first end and the second end. The first end of the carbon nanotube pipe is electrically connected to one of the plurality of row electrodes. The second end of the carbon nanotube pipe has a number of carbon nanotube peaks. | 08-02-2012 |
20120200017 | ELASTIC DEVICE USING CARBON NANOTUBE FILM - An elastic device includes a first elastic supporter; a second elastic supporter and a carbon nanotube film. The second elastic supporter is spaced from the first elastic supporter. The carbon nanotube film has a first side fixed on the first elastic supporter and a second side opposite to the first side and fixed on the second elastic supporter. | 08-09-2012 |
20120202050 | ELASTIC DEVICE USING CARBON NANOTUBE FILM - An elastic device includes a first elastic supporter; a second elastic supporter and a carbon nanotube film. The second elastic supporter is spaced from the first elastic supporter. The carbon nanotube film has a first side fixed on the first elastic supporter and a second side opposite to the first side and fixed on the second elastic supporter. The carbon nanotube film includes a plurality of first carbon nanotubes orientated primarily along a first direction and a plurality of second carbon nanotubes having orientations different from the first direction. At least one portion of each of the second carbon nanotubes contacts with at least two adjacent first carbon nanotubes. The carbon nanotube film is capable of elastic deformation along a second direction that is substantially perpendicular to the first direction. | 08-09-2012 |
20120220182 | METHOD FOR MAKING ELECTRON EMISSION APPARATUS - A method for making the electron emission apparatus is provided. In the method, an insulating substrate including a surface is provided. A number of grids are formed on the insulating substrate and defined by a plurality of electrodes. A number of conductive linear structures are fabricated and supported by the electrodes. The number of conductive linear structures are substantially parallel to the surface and each of the grids contains at least one of the conductive linear structures. The conductive linear structures are cut to form a number of electron emitters. Each of the electron emitters has two electron emission ends defining a gap therebetween. | 08-30-2012 |
20120261588 | TRANSMISSION ELECTRON MICROSCOPE MICRO-GRID - A transmission electron microscope (TEM) micro-grid includes a grid and a carbon nanotube composite film covered thereon. The carbon nanotube composite film includes a carbon nanotube film and a layer of nano-materials coated thereon. The carbon nanotube composite film covers a surface of the grid. The nano-material layer is coated on a surface of each of the plurality of carbon nanotubes. | 10-18-2012 |
20120273754 | LIGHT EMITTING DIODE - A light emitting diode includes a second electrode, a first semiconductor layer, an active layer, a second semiconductor layer, a reflector, and a first electrode. The second electrode, the first semiconductor layer, the active layer, the second semiconductor layer, and the reflector are stacked on the first electrode in that order. The first semiconductor layer defines a plurality of grooves on a surface contacting the second electrode. The plurality of grooves form a patterned surface used as the light extraction surface. A carbon nanotube layer is located on the patterned surface and embedded into the grooves. | 11-01-2012 |
20120273755 | LIGHT EMITTING DIODE - A light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layer stacked in that order; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer. The light emitting diode further includes a carbon nanotube layer. The carbon nanotube layer is enclosed in the interior of the first semiconductor layer. The carbon nanotube layer includes a number of carbon nanotubes. | 11-01-2012 |
20120273756 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a carbon nanotube layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on one side of the substrate in that order. The first semiconductor layer is adjacent to the substrate. The carbon nanotube layer is located between the first semiconductor layer and the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer. | 11-01-2012 |
20120273818 | LIGHT EMITTING DIODE - A light emitting diode includes a carbon nanotube layer, a first semiconductor layer, a second semiconductor layer, an active layer, a first electrode and a second electrode stacked on an epitaxial growth surface of a substrate. A first part of the carbon nanotube layer is covered by the first semiconductor layer and a second part of the carbon nanotube layer is exposed. The first electrode is electrically connected with the second semiconductor layer and the second electrode electrically is connected with the second part of the carbon nanotube layer. | 11-01-2012 |
20120273827 | LIGHT EMITTING DIODE - A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, an upper electrode, and a lower electrode. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer. The lower electrode is electrical connected with the first semiconductor layer, and the upper electrode is electrical connected with the second semiconductor layer. A surface of the second semiconductor layer away from the active layer is used as the light extraction surface. A surface of the first semiconductor layer connected with the lower electrode is a patterned surface comprising a plurality of grooves. | 11-01-2012 |
20120273828 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a first semiconductor layer, an active layer and a second semiconductor layer. The first semiconductor layer, the active layer and the second semiconductor layer are stacked on one side of the substrate in that order. The first semiconductor layer is oriented to the substrate. A number of channels are defined between the first semiconductor layer and the substrate. | 11-01-2012 |
20120276666 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode, the method includes the following steps. First, a substrate having an epitaxial growth surface is provided. Second, a carbon nanotube layer is suspended above the epitaxial growth surface. Third, a first semiconductor layer, an active layer and a second semiconductor layer are grown on the epitaxial growth surface in that order. Fourth, a portion of the second semiconductor layer and the active layer is etched to expose a portion of the first semiconductor layer. Fifth, a first electrode is prepared on the first semiconductor layer and a second electrode is prepared on the second semiconductor layer. | 11-01-2012 |
20120276669 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method of making a LED includes following steps. A substrate is provided, and the substrate includes an epitaxial growth surface. A carbon nanotube layer is placed on the epitaxial growth surface. A first semiconductor layer, an active layer, and a second semiconductor layer are grown in that order on the substrate. A reflector and a first electrode are deposited on the second semiconductor layer in that order. The substrate is removed. A second electrode is deposited on the first semiconductor layer. | 11-01-2012 |
20120276670 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method of fabricating a light emitting diode includes following steps. A substrate is provided, and the substrate includes an epitaxial growth surface. A carbon nanotube layer is located on the epitaxial growth surface. A first semiconductor layer, an active layer, and a second semiconductor layer grow in that order on the substrate. An upper electrode is deposited on the second semiconductor layer. The substrate is removed. A lower electrode is deposited on the first semiconductor layer. | 11-01-2012 |
20120276671 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method of making a LED includes following steps. A substrate with an epitaxial growth surface is provided. A carbon nanotube layer is placed on the epitaxial growth surface. A semiconductor epitaxial layer is grown on the epitaxial growth surface, and the semiconductor epitaxial layer includes an N-type semiconductor layer, an active layer, a P-type semiconductor layer. The semiconductor epitaxial layer is etched to expose part of the carbon nanotube layer. A first electrode is formed on a surface of the semiconductor epitaxial layer which is away from the substrate. A second electrode is formed to electrically connect with the part of the carbon nanotube layer which is exposed. | 11-01-2012 |
20120276672 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making a light emitting diode comprises the following steps. First, a substrate having an epitaxial growth surface is provided. Second, a carbon nanotube layer is located on the epitaxial growth surface. Third, a first semiconductor layer, an active layer, and a second semiconductor layer is grown on the epitaxial growth surface. Fourth, a portion of the second semiconductor layer and the active layer is etched to expose a portion of the first semiconductor layer. Fifth, a first electrode is electrically connected to the first semiconductor layer, and a second electrode electrically is connected to the second semiconductor layer. | 11-01-2012 |
20120276673 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making a light emitting diode, the method includes the following steps. First, a substrate having an epitaxial growth surface is provided. Second, a carbon nanotube layer is placed on the epitaxial growth surface. Third, a first semiconductor layer, an active layer and a second semiconductor layer are grown on the epitaxial growth surface. Fourth, a portion of the second semiconductor layer and the active layer is etched to expose a portion of the first semiconductor layer. Fifth, a first electrode is prepared on the first semiconductor layer and a second electrode is prepared on the second semiconductor layer. Sixth, the carbon nanotube layer is removed. | 11-01-2012 |
20120325139 | EPTAXIAL SUBSTRATE, METHOD FOR MAKING THE SAME AND METHOD FOR GROWING EPITAXIAL LAYER USING THE SAME - An epitaxial substrate is provided, the epitaxial substrate is used to grow epitaxial layer. The epitaxial substrate includes a base having a number of grooves to form a patterned epitaxial growth surface. The patterned epitaxial growth surface is referred as an epitaxial growth surface. A carbon nanotube layer covers on the epitaxial growth surface, and the carbon nanotube layer corresponding to the grooves is suspended on the epitaxial substrate. | 12-27-2012 |
20130062001 | METHOD FOR LAYING CARBON NANOTUBE FILM - A method for laying carbon nanotube film includes following steps. A carbon nanotube film is provided. The carbon nanotube film includes a number of carbon nanotube strings substantially parallel to each other and extending along a first direction. The carbon nanotube film is stretched along a second direction substantially perpendicular with the first direction to form a deformation along the second direction. The carbon nanotube film is placed on a surface of a substrate. The deformation along the second direction is kept. | 03-14-2013 |
20130082588 | FIELD EMISSION DEVICE AND FIELD EMISSION DISPLAY HAVING SAME - A field emission device includes a cathode and a carbon nanotube (CNT) gate electrode. The CNT gate electrode which is electrically insulated from the cathode includes a CNT layer and a dielectric layer. The CNT layer which has a surface includes a number of micropores. The dielectric layer is coated on the surface of the CNT layer and an inner wall of each of the micropores. | 04-04-2013 |
20130203314 | METHOD FOR MAKING EMITTER HAVING CARBON NANOTUBES - A method for making an emitter is disclosed. A number of carbon nanotubes in parallel with each other are provided. The carbon nanotubes have a number of first ends and a number of second ends opposite to the number of first ends. The first ends are attached on a first electrode and the second ends are attached on a second electrode. The first electrode and the second electrode are spaced from each other. A voltage is supplied between the first electrode and the second electrode to break the carbon nanotubes. | 08-08-2013 |
20130220534 | CARBON NANOTUBE BASED MICRO-TIP STRUCTURE AND METHOD FOR MAKING THE SAME - A method for making a carbon nanotube micro-tip structure is disclosed. A carbon nanotube film structure and an insulting substrate are provided. The insulating substrate includes a surface. At least one strip-shaped recess is defined at the surface. The carbon nanotube film structure is covered on the surface of the insulating substrate, and has a suspended portion covered on the at least one strip-shaped recess. The suspended portion of the carbon nanotube film structure is laser etched, to define a first hollow pattern in the suspended portion and form a patterned carbon nanotube film structure according to the first hollow pattern. The patterned carbon nanotube film structure includes two strip-shaped arms. The two strip-shaped arms are joined at one end to form a tip portion. The tip portion is suspended above the strip-shaped recess. | 08-29-2013 |
20130221836 | FIELD EMISSION ELECTRON SOURCE AND FIELD EMISSION DEVICE USING THE SAME - A field emission electron source includes a carbon nanotube micro-tip structure. The carbon nanotube micro-tip structure includes an insulating substrate and a patterned carbon nanotube film structure. The insulating substrate includes a surface. The surface includes an edge. The patterned carbon nanotube film structure is partially arranged on the surface of the insulating substrate. The patterned carbon nanotube film structure includes two strip-shaped arms joined at one end to form a tip portion protruded from the edge of the surface of the insulating substrate and suspended. Each of the two strip-shaped arms includes a plurality of carbon nanotubes parallel to the surface of the insulating substrate. A field emission device is also disclosed. | 08-29-2013 |
20130224429 | CARBON NANOTUBE BASED MICRO-TIP STRUCTURE AND METHOD FOR MAKING THE SAME - A carbon nanotube micro-tip structure includes an insulating substrate and a patterned carbon nanotube film structure. The insulating substrate includes a surface. The surface includes an edge. The patterned carbon nanotube film structure is partially arranged on the surface of the insulating substrate. The patterned carbon nanotube film structure includes two strip-shaped arms joined at one end to form a tip portion protruded from the edge of the surface of the insulating substrate and suspended. Each of the two strip-shaped arms includes a plurality of carbon nanotubes parallel to the surface of the insulating substrate. | 08-29-2013 |
20130224893 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method of making a LED includes following steps. A substrate is provided, and the substrate includes an epitaxial growth surface. A buffer layer is grown on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. A first semiconductor layer, an active layer, and a second semiconductor layer are grown in that order on the buffer layer. A reflector and a first electrode are deposited on the second semiconductor layer in that order. The substrate and the buffer layer are removed. A second electrode is deposited on the first semiconductor layer. | 08-29-2013 |
20130227749 | ATOMIC FORCE MICROSCOPE PROBE - An atomic force microscope probe includes a carbon nanotube micro-tip structure. The carbon nanotube micro-tip structure includes an insulating substrate and a patterned carbon nanotube film structure. The insulating substrate includes a surface. The surface includes an edge. The patterned carbon nanotube film structure is partially arranged on the surface of the insulating substrate. The patterned carbon nanotube film structure includes two strip-shaped arms joined together to form a tip portion protruding and suspending from the edge of the surface of the insulating substrate. The two strip-shaped arms include a number of carbon nanotubes parallel to the surface of the insulating substrate. | 08-29-2013 |
20130255565 | METHOD FOR MAKING EPITAXIAL STRUCTURE - A method for making an epitaxial structure includes the following steps. A substrate having an epitaxial growth surface is provided. A buffer layer is formed on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. A first epitaxial layer is epitaxially grown on the buffer layer. The substrate and the buffer layer are removed to expose a second epitaxial growth surface. A second epitaxial layer is epitaxially grown on the second epitaxial growth surface. | 10-03-2013 |
20130255566 | METHOD FOR MAKING EPITAXIAL STRUCTURE - A method for making an epitaxial structure includes the following steps. A substrate having an epitaxial growth surface is provided. A buffer layer is formed on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. A first epitaxial layer is epitaxially grown on the buffer layer. The substrate and the buffer layer are removed to expose a second epitaxial growth surface. A second epitaxial layer is epitaxially grown on the second epitaxial growth surface. | 10-03-2013 |
20130255567 | METHOD FOR MAKING EPITAXIAL BASE - A method for making an epitaxial base includes the following steps. A plurality of grooves and a plurality of bulges are formed on an epitaxial growth surface of a substrate by etching the epitaxial growth surface. A carbon nanotube layer is located on the epitaxial growth surface, wherein the carbon nanotube layer defines a first part attached on top surface of bulges, and a second part suspended on the grooves. The second part of the carbon nanotube layer is attached on bottom surface of the grooves by treating the carbon nanotube layer. | 10-03-2013 |
20130256628 | EPITAXIAL STRUCTURE - An epitaxial structure is provided. The epitaxial structure comprises a substrate, a carbon nanotube layer and an epitaxial layer stacked in that order. The substrate has an epitaxial growth surface and defines a plurality of first grooves and first bulges on the epitaxial growth surface. The carbon nanotube layer covers the epitaxial growth surface, wherein a first part of the carbon nanotube layer is attached on top surface of the first bulges, and a second part of the carbon nanotube layer is attached on bottom surface and side surface of the first grooves. The epitaxial layer is formed on the epitaxial growth surface, and the carbon nanotube layer is sandwiched between the epitaxial layer and the substrate. | 10-03-2013 |
20130260093 | EPITAXIAL BASE - An epitaxial base is provided. The epitaxial base includes a substrate and a carbon nanotube layer. The substrate has an epitaxial growth surface and defines a plurality of grooves and bulges on the epitaxial growth surface. The carbon nanotube layer covers the epitaxial growth surface, wherein a first part of the carbon nanotube layer attached on top surface of the bulges, and a second part of the carbon nanotube layer attached on bottom surface and side surface of the grooves. | 10-03-2013 |
20130260487 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode, the method includes the following steps. First, a substrate having an epitaxial growth surface is provided. Second, a carbon nanotube layer is suspended above the epitaxial growth surface. Third, a first semiconductor layer, an active layer and a second semiconductor layer are grown on the epitaxial growth surface in that order, wherein the first semiconductor layer includes a buffer layer, an intrinsic semiconductor layer, and a doped semiconductor layer stacked in that order. Fourth, the doped semiconductor layer is exposed by removing the substrate, the buffer layer, and the intrinsic semiconductor layer. Fifth, a first electrode is prepared on the first semiconductor layer and a second electrode is prepared on the second semiconductor layer. | 10-03-2013 |
20130260502 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making a light emitting diode includes the following steps. A substrate having a first epitaxial growth surface is provided. A carbon nanotube layer is placed on the first epitaxial growth surface of the substrate. A surface of the first semiconductor layer is exposed by removing the substrate and the carbon nanotube layer. The surface of the first semiconductor layer is defined as a second epitaxial growth surface. An active layer and a second semiconductor layer are grown on the second epitaxial growth surface in that order. A surface of the active layer contacted the first semiconductor layer engages with the second epitaxial growth surface. A part of the first semiconductor layer is exposed by etching a part of the active layer and the second semiconductor layer. A first electrode is applied on the first semiconductor layer and a second electrode is applied on the second semiconductor layer. | 10-03-2013 |
20130260633 | METHOD FOR MAKING INCANDESCENT LIGHT SOURCE AND INCANDESCENT LIGHT SOURCE DISPLAY - A method for making an incandescent light source display is disclosed. Electrode pairs connected to the driving circuit are formed on a substrate. The electrode pairs are spaced from each other and located on pixel locations. Each electrode pair includes a first electrode and a second electrode. The electrode pairs are covered with a drawn carbon nanotube film. The drawn carbon nanotube film suspends between the first electrode and the second electrode and has the plurality of carbon nanotubes substantially aligned an X direction from the first electrode to the second electrode in each electrode pair. The drawn carbon nanotube film is then cut along the X direction to form at least one carbon nanotube strip in each pixel location. The drawn carbon nanotube film between any adjacent two pixel locations are broken off. The carbon nanotube strip is shrunk into a carbon nanotube wire. | 10-03-2013 |
20130285016 | EPITAXIAL STRUCTURE - An epitaxial structure is provided. The epitaxial structure includes a substrate, an epitaxial layer and a graphene layer. The epitaxial layer is located on the substrate. The graphene layer is located between the substrate and the epitaxial layer. The graphene layer can be a graphene film or graphene powder. The epitaxial structure can be made by: providing a substrate having an epitaxial growth surface, placing a graphene layer on the epitaxial growth surface, and epitaxially growing an epitaxial layer on the epitaxial growth surface. | 10-31-2013 |
20130285092 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, graphene layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, a second electrode, and a reflection layer. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on the substrate in sequence. The first electrode is electrically connected with the second semiconductor layer and the second electrode electrically is connected with the second part of the carbon nanotube layer. The graphene layer is located on at least one of the first semiconductor layer and the second semiconductor layer. The reflection layer covers the second semiconductor layer. | 10-31-2013 |
20130285105 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, graphene layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The first semiconductor layer is on the epitaxial growth layer of the substrate. The active layer is between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected with the second semiconductor layer and the second electrode electrically is connected with the second part of the carbon nanotube layer. The graphene layer is located on at least one of the first semiconductor layer and the second semiconductor layer. | 10-31-2013 |
20130285106 | LIGHT EMITTING DIODE - A light emitting diode includes a graphene layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked with each other in sequence. The first electrode is located on and electrically connected with the second semiconductor layer. The second electrode is located on and electrically connected with the first semiconductor layer. The graphene layer is located on at least one of the first semiconductor layer and the second semiconductor layer. | 10-31-2013 |
20130285115 | EPTAXIAL STRUCTURE - An epitaxial structure includes a substrate having an epitaxial growth surface, a first epitaxial layer, a graphene layer and a second epitaxial layer. The first epitaxial layer is stacked on the epitaxial growth surface. The graphene layer is coated on the first epitaxial layer. The second epitaxial layer is located on the first epitaxial layer and covers the graphene layer. | 10-31-2013 |
20130285212 | EPITAXIAL STRUCTURE - An epitaxial structure is provided. The epitaxial structure includes an epitaxial layer and a graphene layer. The epitaxial layer has a patterned surface. The graphene layer is located on the patterned surface of the epitaxial layer. The patterned graphene layers are a continuous structure defining the plurality of apertures. The sizes of the apertures are in a range from about 10 nanometers to about 120 micrometers. The dutyfactor of the graphene layer is in a range from about 1:4 to about 4:1. | 10-31-2013 |
20130285213 | EPITAXIAL STUCTURE - An epitaxial structure includes a patterned epitaxial growth surface defining a plurality of grooves. A graphene layer covers the patterned epitaxial growth surface. An epitaxial layer is formed on the patterned epitaxial growth surface, wherein a first part of the graphene layer is sandwiched between the substrate, and a second part of the graphene layer is embedded into the epitaxial layer. | 10-31-2013 |
20130288457 | METHOD FOR MAKING EPITAXIAL STRUCTURE - A method for making epitaxial structure is provided. The method includes providing a substrate having an epitaxial growth surface, placing a graphene layer on the epitaxial growth surface, and epitaxially growing an epitaxial layer on the epitaxial growth surface. The graphene layer includes a number of apertures to expose a part of the epitaxial growth surface. The epitaxial layer is grown from the exposed part of the epitaxial growth surface and through the aperture. | 10-31-2013 |
20130288458 | METHOD FOR MAKING EPITAXIAL STRUCTURE - A method for making epitaxial structure is provided. The method includes providing a substrate having an epitaxial growth surface, growing a buffer layer on the epitaxial growth surface; placing a graphene layer on the buffer layer; epitaxially growing an epitaxial layer on the buffer layer; and removing the substrate. The graphene layer includes a number of apertures to expose a part of the buffer layer. The epitaxial layer is grown from the exposed part of the buffer layer and through the apertures. | 10-31-2013 |
20130288459 | METHOD FOR MAKING EPITAXIAL STRUCTURE - A method for making epitaxial structure is provided. The method includes providing a substrate having an epitaxial growth surface, patterning the epitaxial growth surface; placing a graphene layer on the patterned epitaxial growth surface, and epitaxially growing an epitaxial layer on the epitaxial growth surface. The graphene layer includes a number of apertures to expose a part of the patterned epitaxial growth surface. The epitaxial layer is grown from the exposed part of the patterned epitaxial growth surface and through the aperture. | 10-31-2013 |
20130288464 | METHOD FOR MAKING EPTAXIAL STRUCTURE - A method for making an epitaxial structure includes following steps. A substrate having an epitaxial growth surface is provided. A first epitaxial layer is epitaxially grown on the epitaxial growth surface. A graphene layer is applied on the first epitaxial layer. A second epitaxial layer is epitaxially grown on the first epitaxial layer. | 10-31-2013 |
20130340922 | METHOD FOR MAKING CARBON NANOTUBE COMPOSITE HOLLOW STRUCTURE - A method for making a carbon nanotube composite hollow structure is provided. The method includes: passing a linear structure through a hollow rotating shaft and fixing the linear structure on the collecting unit; drawing a carbon nanotube structure from a carbon nanotube array loaded on the face plate, and adhering one end of the carbon nanotube structure to part of the linear structure between the wrapping unit and the collecting unit; forming a first carbon nanotube composite wire collected by the collecting unit by rotating the face plate and pulling the linear structure along a fixed direction such that the carbon nanotube structure wraps around the linear structure; forming a second carbon nanotube composite structure by applying a polymer liquid to the first carbon nanotube composite structure; and forming the carbon nanotube composite hollow structure by removing the linear structure from the second carbon nanotube composite structure. | 12-26-2013 |
20130342106 | THERMIONIC EMISSION DEVICE - A thermionic emission device includes an insulating substrate, a patterned carbon nanotube film structure, a positive electrode and a negative electrode. The insulating substrate includes a surface. The surface includes an edge. The patterned carbon nanotube film structure is partially arranged on the surface of the insulating substrate. The patterned carbon nanotube film structure includes two strip-shaped arms joined at one end to form a tip portion protruded from the edge of the surface of the insulating substrate and suspended. The patterned carbon nanotube film structure includes a number of carbon nanotubes parallel to the surface of the insulating substrate. The patterned carbon nanotube film structure is connected between the positive electrode and the negative electrode in series. | 12-26-2013 |
20140014901 | LIGHT EMITTING DIODE - A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer and a third semiconductor stacked in that order; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer. The light emitting diode further includes a carbon nanotube layer. The carbon nanotube layer is enclosed in the interior of the first semiconductor layer. The carbon nanotube layer includes a number of carbon nanotubes. | 01-16-2014 |
20140017836 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method of making a LED includes steps of providing a substrate having an epitaxial growth surface. A buffer layer and an intrinsic semiconductor layer are grown thereon in that order. A carbon nanotube layer is placed on the intrinsic semiconductor layer. A first semiconductor layer, an active layer, and a second semiconductor layer are grown in that order on the intrinsic semiconductor layer, the first semiconductor layer covering the carbon nanotube layer. A first electrode is applied to a surface of the second semiconductor layer and the substrate, the buffer layer, and the intrinsic semiconductor layer are removed to expose the carbon nanotube layer. A second electrode is applied to make electrical connections with the carbon nanotube layer. | 01-16-2014 |
20140027404 | METHOD FOR MAKING CARBON NANOTUBE NEEDLE - A method for manufacturing a carbon nanotube needle is provided. A carbon nanotube film comprising of a plurality of commonly aligned carbon nanotubes, a first electrode, and a second electrode are provided. The carbon nanotube film is fixed to the first electrode and the second electrode. An organic solvent is applied to treat the carbon nanotube film to form at least one carbon nanotube string. A voltage is applied to the carbon nanotube string until the carbon nanotube string snaps | 01-30-2014 |
20140065742 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making a light emitting diode includes the following steps. A first epitaxial substrate having a first epitaxial growth surface is provided. A carbon nanotube layer is placed on the first epitaxial growth surface. An intrinsic semiconductor layer is grown on the first epitaxial growth surface epitaxially. A second epitaxial substrate is formed by removing the carbon nanotube layer, wherein the second epitaxial substrate has a second epitaxial growth surface. A first semiconductor layer, an active layer and a second semiconductor layer are grown on the second epitaxial growth surface in that order. A part of the first semiconductor layer is exposed by etching a part of the active layer and the second semiconductor layer. A first electrode is applied on the first semiconductor layer and a second electrode is applied on the second semiconductor layer. | 03-06-2014 |
20140070257 | LIGHT EMITTING DIODE - A light emitting diode includes a second electrode, a first semiconductor layer, an active layer, a second semiconductor layer, a reflector, and a first electrode. The second electrode, the first semiconductor layer, the active layer, the second semiconductor layer, and the reflector are stacked on the first electrode in that order. The first semiconductor layer defines a number of grooves on a surface contacting the second electrode. The grooves form a patterned surface used as the light extraction surface. | 03-13-2014 |
20140091323 | SEMICONDUCTOR EPITAXIAL STRUCTURE - A semiconductor epitaxial structure is provided. The semiconductor epitaxial structure includes a substrate, a doped semiconductor epitaxial layer, and a carbon nanotube layer. The doped semiconductor epitaxial layer is located on the substrate. The carbon nanotube layer is located between the substrate and the doped semiconductor epitaxial layer. The carbon nanotube layer can be a carbon nanotube film drawn from a carbon nanotube array and including a number of successive and oriented carbon nanotubes joined end-to-end by van der Waals attractive force therebetween. | 04-03-2014 |
20140091436 | EPITAXIAL STRUCTURE - An epitaxial structure is provided. The epitaxial structure includes a substrate, an first epitaxial layer, a second epitaxial layer, a first carbon nanotube layer and a second carbon nanotube layer. The first epitaxial layer is located on the substrate. The first carbon nanotube layer is located between the substrate and the first epitaxial layer. The second epitaxial layer is located on the first epitaxial layer. The second carbon nanotube layer is located between the first epitaxial layer and the second epitaxial layer. | 04-03-2014 |
20140094022 | METHOD FOR MAKING EPITAXIAL STRUCTURE - A method for making an epitaxial structure is provided. The method includes the following steps. A substrate having an epitaxial growth surface is provided. A buffer layer is formed on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. An epitaxial layer is epitaxially grown on the buffer layer. The substrate and the carbon nanotube layer are removed. | 04-03-2014 |
20140110889 | METHOD FOR MAKING CARBON NANOTUBE FILM - A method for making carbon nanotube array includes providing a carbon nanotube array formed on a surface of a substrate. The carbon nanotube array is stripped from the surface of the substrate. The carbon nanotube array is suspended in an inert gas environment or a vacuum environment. A temperature of the carbon nanotube array can be in a range from about 200° C. to about 2400° C. by heating the carbon nanotube array. In a state of heating the carbon nanotube array, a plurality of carbon nanotubes of the carbon nanotube array is selected and a carbon nanotube film is pulled out by a drawing tool. | 04-24-2014 |
20140137397 | METHOD FOR MAKING THERMOACOUSTIC DEVICE - A method for making thermoacoustic device includes following steps. A silicon substrate having a first surface and second surface opposite to the first surface is provided. The first surface is patterned by forming a plurality of grooves substantially oriented along a first direction, wherein the plurality of grooves is spaced from each other, and a bulge is formed between each two adjacent grooves. An insulating layer is coated on the patterned surface. A first electrode and a second electrode are formed on the insulating layer, wherein the first electrode and the second electrode are spaced from each other. A carbon nanotube structure is applied on the insulating layer, wherein the carbon nanotube structure is electrically connected to the first electrode and the second electrode, the carbon nanotube structure is suspended above the plurality of grooves. | 05-22-2014 |
20140137398 | METHOD FOR MAKING THERMOACOUSTIC DEVICE ARRAY - A method for making a thermoacoustic device array includes the following step. A substrate having a surface is provided. The surface defines a grid having a number of cells. A number of recesses are defined on each of the cells. The recesses are parallel with and spaced from each other. A first electrode and a second electrode are formed on each of the cells. The first electrode is spaced from the second electrode, and one of the recesses is located between the first electrode and the second electrode. A sound wave generator is applied on the substrate and electrically connected to the first electrode and the second electrode. The sound wave generator is suspended over the recesses. The sound wave generator is separated according to the cells. | 05-22-2014 |
20140140528 | EARPHONE - An earphone includes a housing and a thermoacoustic device array. The housing has a hollow structure. The thermoacoustic device array is disposed in the housing. The thermoacoustic device array includes a number of thermoacoustic device units. The thermoacoustic device unit includes a substrate, a sound wave generator, a first electrode and a second electrode. The first electrode and the second electrode are spaced from each other and electrically connected to the sound wave generator. The first surface defines a number of recesses parallel with and spaced from each other. At least one of the recesses is located between the first electrode and the second electrode. A depth of each recess ranges from about 100 micrometers to about 200 micrometers. The sound wave generator is located on and insulated with the substrate. The sound wave generator includes a carbon nanotube structure suspended over the at least one recess. | 05-22-2014 |
20140140529 | EARPHONE - An earphone includes a shell and a thermoacoustic chip. The shell defines a first space. The thermoacoustic chip is disposed in the space of the shell. The thermoacoustic chip includes a speaker and a capsule defining a second space to accommodate the speaker. The speaker includes a substrate, a sound wave generator, a first electrode and a second electrode. The first electrode and the second electrode are spaced from each other and electrically connected to the sound wave generator. The substrate includes a first surface and a second surface opposite to the first surface. The capsule has at least one through hole and at least two connectors. The sound wave generator is opposite to the at least one through hole. Two of the at least two connectors are electrically connected with the first electrode and the second electrode. | 05-22-2014 |
20140140544 | EARPHONE - An earphone includes a loudspeaker, a signal process, an audio signal input port, and a driving port. The loudspeaker includes a thermoacoustic device disposed in a housing. The signal processor is electrically connected to the loudspeaker to provide signal to the loudspeaker. The audio input port is electrically connected to the signal processor to provide audio signal. The power supply device is electrically connected to the signal processor to provide driving current. The thermoacoustic device includes a substrate, and the substrate defines a plurality of grooves, a sound wave generator is suspended on the plurality of grooves. | 05-22-2014 |
20140140545 | THERMOACOUSTIC DEVICE - A thermoacoustic device includes a substrate, a sound wave generator, an insulating layer, a first electrode and a second electrode. The first electrode and the second electrode are spaced from each other and electrically connected to the sound wave generator. The substrate includes a first surface and a second surface opposite to the first surface. The first surface defines a plurality of grooves, and a bulge is formed between the adjacent two grooves. The insulating layer is located on the first surface, and continuously attached on the grooves and the bulge. The sound wave generator is located on the insulating layer. The sound wave generator defines a first portion and a second portion. The first portion is suspended on the grooves. The second portion is attached on the bulge. | 05-22-2014 |
20140140546 | EARPHONE - An earphone includes a housing and a thermoacoustic device. The housing has a hollow structure. The thermoacoustic device is disposed in the housing. The thermoacoustic device includes a substrate, a sound wave generator, a first electrode and a second electrode. The first electrode and the second electrode are spaced from each other and electrically connected to the sound wave generator. The substrate includes a first surface and a second surface opposite to the first surface. The first surface defines a number of recesses parallel with and spaced from each other. A depth of each of the recesses ranges from about 100 micrometers to about 200 micrometers. The sound wave generator is located on the first surface of the substrate. The sound wave generator includes a carbon nanotube structure that is suspended over the recesses. | 05-22-2014 |
20140140547 | THERMOACOUSTIC DEVICE - A thermoacoustic device includes a PCB substrate, a speaker installed on the PCB substrate and including a sound wave generator, and an IC chip installed on the PCB substrate. The speaker and the IC chip are electrically connected by the PCB substrate. The IC chip input an audio signal to the speaker. The speaker heats surrounding medium intermittently according to the input signal so that the surrounding medium to produce a sound by expansion and contraction. | 05-22-2014 |
20140140548 | THERMOACOUSTIC CHIP - A thermoacoustic chip includes a shell having a hole and a speaker located in the shell. The speaker includes a substrate having a surface, a sound wave generator located on the surface of the substrate and opposite to the hole of the shell, and, a first electrode and a second electrode. The first electrode and the second electrode are spaced from each other and electrically connected to the sound wave generator. | 05-22-2014 |
20140140549 | THERMOACOUSTIC CHIP - A thermoacoustic chip includes a substrate, a sound wave generator, a first electrode, and a second electrode, and an integrated circuit chip. The substrate has a first surface. The sound wave generator is located on the first surface of the substrate. The first electrode and a second electrode are spaced from each other and electrically connected to the sound wave generator. The integrated circuit chip is located on the substrate and electrically connected to the first electrode and the second electrode. | 05-22-2014 |
20140140550 | THERMOACOUSTIC DEVICE ARRAY - A thermoacoustic device array includes a substrate and a plurality of thermoacoustic device units located on a surface of the substrate. The substrate defines a number of recesses on the surface, and the recesses are spaced from and parallel with each other. Each thermoacoustic device unit includes a sound wave generator, a first electrode and a second electrode. The first electrode and the second electrode are spaced from each other and electrically connected to the sound wave generator. The sound wave generator is located on the surface and suspended over the recesses. At least one of the recesses is located between the first electrode and the second electrode, and one portion of the sound wave generator that is between the first electrode and the second electrode is suspended over the at least one of the recesses. | 05-22-2014 |
20140140563 | EARPHONE - An earphone includes a loudspeaker, a signal process, an audio signal input port, and a driving port. The loudspeaker includes a thermoacoustic device disposed in a housing. The signal processor is electrically connected to the loudspeaker to provide signal to the loudspeaker. The audio input port is electrically connected to the signal processor to provide audio signal. The power supply device is electrically connected to the signal processor to provide driving current. The thermoacoustic device includes a substrate, and the substrate defines a plurality of grooves, a sound wave generator is suspended on the plurality of grooves. | 05-22-2014 |
20140140564 | EARPHONE - An earphone includes a loudspeaker, a signal process, an audio signal input port, and a driving port. The loudspeaker includes a thermoacoustic device disposed in a housing. The signal processor is electrically connected to the loudspeaker to provide signal to the loudspeaker. The audio input port is electrically connected to the signal processor to provide audio signal. The driving port is electrically connected to the signal processor to provide driving signal. The thermoacoustic device includes a substrate, and the substrate defines a number of grooves, a sound wave generator is suspended on the grooves. | 05-22-2014 |
20140144576 | METHOD FOR MAKING TRANSPARENT CONDUCTIVE ELEMENT - A method for making a transparent conductive element includes providing a carbon nanotube film. The carbon nanotube film includes a number of carbon nanotube wires in parallel with and spaced from each other and a number of carbon nanotubes in contact with adjacent two of the carbon nanotube wires. The carbon nanotube film is placed on a surface of a softened polymer substrate. The polymer substrate and the carbon nanotube film are stretched. The softened polymer substrate is solidified to maintain the stretched state of the carbon nanotube film. | 05-29-2014 |
20140185840 | THERMOACOUSTIC DEVICE - A thermoacoustic device comprise a substrate, a number of thermoacoustic units on the substrate, a number of switches, a driving integrated circuit, a scanning integrated circuit, and a common electrode. The switches are electrically connected to the thermoacoustic units. Each of the switches is electrically connected in series between the first electrode and the driving integrated circuit through a driving electrode. Each of the switches is electrically connected to the scanning integrated circuit through a scanning electrode. The common electrode is electrically connected to the second electrode of the number of thermoacoustic units. | 07-03-2014 |
20140185841 | THERMOACOUSTIC DEVICE - A thermoacoustic device includes a first substrate, a sound wave generator, a first electrode, a second electrode and a second substrate. A number of recesses are defined on a surface of the first substrate. The sound-producing parts of the wave generator are located on the surface and suspended over the recesses to enable very rapid expansion by heat, and contraction. The first electrode and the second electrode are spaced from each other and electrically connected to the sound wave generator. The sound wave generator is held in place by the first substrate and the second substrate. A number of through holes are defined by the second substrate. Some of the through holes correspond with the recesses to allow the output of sound. | 07-03-2014 |
20140186256 | REACTOR AND METHOD FOR GROWING CARBON NANOTUBE USING THE SAME - A reactor includes a reactor chamber and a carbon nanotube catalyst composite layer. The reactor chamber has an inlet and an outlet. The carbon nanotube catalyst composite layer is suspended in the reactor chamber, wherein the carbon nanotube catalyst composite layer defines a number of apertures, gases in the reactor chamber penetrate the carbon nanotube catalyst composite layer through the plurality of apertures. | 07-03-2014 |
20140186546 | REACTOR AND METHOD FOR GROWING CARBON NANOTUBE USING THE SAME - A reactor includes a reactor chamber and a carbon nanotube catalyst composite layer. The reactor chamber has an inlet and an outlet. The carbon nanotube catalyst composite layer rotates in the reactor chamber, wherein the carbon nanotube catalyst composite layer defines a number of apertures, gases in the reactor chamber flow penetrate the carbon nanotube catalyst composite layer through the plurality of apertures. | 07-03-2014 |
20140186547 | REACTOR AND METHOD FOR GROWING CARBON NANOTUBE USING THE SAME - A reactor includes a reactor chamber and a substrate. The reactor chamber having an inlet and an outlet. The hollow structure is received in the reactor chamber, wherein the hollow structure includes a sidewall, a bottom, and a opening opposite to the bottom, the sidewall defines a number of apertures, gases in the reactor chamber flow penetrate the hollow structure through the number of apertures. | 07-03-2014 |
20140217453 | LIGHT EMITTING DIODE - A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, an upper electrode, and a lower electrode. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer. The lower electrode is electrically connected with the first semiconductor layer, and the upper electrode is electrically connected with the second semiconductor layer. A surface of the second semiconductor layer away from the active layer is used as the light extraction surface. A surface of the first semiconductor layer connected with the lower electrode is a patterned surface including a number of grooves. | 08-07-2014 |
20140306255 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, graphene layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The first semiconductor layer is on the epitaxial growth surface of the substrate. The active layer is between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected with the second semiconductor layer and the second electrode electrically is connected with the second part of the carbon nanotube layer. The graphene layer is located between the active layer and the first semiconductor layer. | 10-16-2014 |
20140306256 | LIGHT EMITTING DIODE - A light emitting diode includes a graphene layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked with each other in sequence. The first electrode is located on and electrically connected with the second semiconductor layer. The second electrode is located on and electrically connected with the first semiconductor layer. The graphene layer is located between the active layer and the first semiconductor layer. | 10-16-2014 |
20140326946 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, graphene layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, a second electrode, and a reflection layer. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on the substrate in sequence. The first electrode is electrically connected with the second semiconductor layer and the second electrode electrically is connected with the second part of the carbon nanotube layer. The graphene layer is located between the active layer and the second semiconductor layer. The reflection layer covers the second semiconductor layer. | 11-06-2014 |
20140326947 | LIGHT EMITTING DIODE - A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer and a third semiconductor stacked in that order; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer. The light emitting diode further includes a carbon nanotube layer. The carbon nanotube layer is enclosed in the interior of the first semiconductor layer. The carbon nanotube layer includes a number of carbon nanotubes. | 11-06-2014 |
20140339592 | LIGHT EMITTING DIODE - A light emitting diode includes a patterned carbon nanotube layer, a first semiconductor layer, a second semiconductor layer, an active layer stacked on an epitaxial growth surface of a substrate in that sequence. A first portion of the patterned carbon nanotube layer is covered by the first semiconductor layer and a second portion of the patterned carbon nanotube layer is exposed. A first electrode is electrically connected with the second semiconductor layer. A second electrode electrically is electrically connected with the second portion of the patterned carbon nanotube layer. | 11-20-2014 |
20150064816 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode, the method includes the following steps. A substrate having an epitaxial growth surface is provided. A carbon nanotube layer is suspended above the epitaxial growth surface. A first semiconductor layer, an active layer and a second semiconductor layer are grown on the epitaxial growth surface in that order. A third semiconductor layer is formed on a surface of the second semiconductor layer, wherein the third semiconductor layer includes a plurality of spaced protrusions. A portion of the first semiconductor layer is exposed by etching a portion of the third semiconductor layer, the second semiconductor layer, and the active layer. A first electrode is formed to electrically connected to the first semiconductor layer and a second electrode is formed to electrically connected to the second semiconductor layer. | 03-05-2015 |