Patent application number | Description | Published |
20130313515 | LIGHT EMITTING DIODE WITH MULTIPLE QUANTUM WELL STRUCTURE - An exemplary light emitting diode includes a first type semiconductor layer, a second type semiconductor layer, and a multi quantum well layer sandwiched between the first and second type semiconductor layers. The multi quantum well layer includes a first barrier layer, a second barrier layer, two well layers sandwiched between the first and second barrier layers, and a third barrier layer sandwiched between the two well layers. The first and second barrier layers each have an energy level of conduction band higher than that of the third barrier layer. The first and second barrier layers each have an energy level of valence band higher than that of the third barrier layer. | 11-28-2013 |
20140014899 | MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE HAVING THE SAME - A multi-quantum well structure includes two first barrier layers, two well layers sandwiched between the two first barrier layers, and a doped second barrier layer sandwiched between the two well layers. The second barrier layer has its conduction band and forbidden band gradually transiting to those of one of the well layers, and a dopant concentration of the second barrier layer gradually changes along a direction from one well layer to the other. The invention also relates to a light emitting diode structure having the multi-quantum well structure. | 01-16-2014 |
20140021486 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light emitting diode (LED) includes a substrate and an eputaxial layer on the substrate. The epitaxial layer includes a N-type GaN-based layer, a light emitting layer, and a P-type GaN-based layer. The LED further includes a first electrode on the N-type GaN-based layer and a second electrode on the P-type GaN-based layer. The P-type GaN-based layer has a inactive portion, and the second electrode is located and covers the inactive portion. | 01-23-2014 |
20140065743 | METHOD OF MANUFACTURING LIGHT EMITTING DIODE DIE - An exemplary method of manufacturing a light emitting diode (LED) die includes steps: providing a preformed LED structure, the LED structure including a first substrate, and a nucleation layer, a buffer layer, an N-type layer, a muti-quantum well layer and an P-type layer formed successively on the first substrate; forming at least one insulation block on the P-type layer; forming a mirror layer on the on the P-type layer and covering the insulation block; forming a conductive second substrate on the mirror layer; removing the first substrate, the nucleation layer and the buffer layer and exposing a bottom surface of the N-type layer; and disposing one N-electrode on the exposed surface of the N-type layer. The N-electrode is located corresponding to the insulation block. | 03-06-2014 |
20140073077 | METHOD FOR EPITAXIAL GROWTH OF LIGHT EMITTING DIODE - A method for epitaxial growth of a light emitting diode, includes following steps: providing a substrate; forming a buffer layer on the substrate; forming a first epitaxial layer on the buffer layer in a first temperature; forming a second epitaxial layer on the first epitaxial layer in a second temperature lower than the first temperature, thereby forming a first rough surface on the second epitaxial layer; etching the second epitaxial layer and the first epitaxial layer until a second rough surface is formed on the first epitaxial layer; forming a mask layer on the rough surface of the first epitaxial layer; partly etching the mask layer to form a plurality of protrusions with the first epitaxial layer exposed thereamong; and forming an N-type epitaxial layer, an active layer and a P-type epitaxial layer on the first epitaxial layer in sequence. | 03-13-2014 |
20140131727 | LIGHT EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a light emitting diode chip includes following steps: providing a sapphire substrate, the sapphire substrate having a plurality of protrusions on an upper surface thereof; forming an un-doped GaN layer on the upper surface of the sapphire substrate, the un-doped GaN layer having an upper part covering top ends of the protrusions; forming a distributed bragg reflective layer on the un-doped GaN layer until the distributed bragg reflective layer totally covering the protrusions and the un-doped GaN layer; etching the distributed bragg reflective layer and the upper part of the un-doped GaN layer to expose the top ends of the protrusions; and forming an n-type GaN layer, an active layer, and a p-type GaN layer sequentially on the top ends of the protrusions and the distributed bragg reflective layer. An LED chip formed by the method described above is also provided. | 05-15-2014 |
20140134774 | METHOD FOR MAKING LIGHT EMITTING DIODE CHIP - A method for making a light emitting diode chip includes following steps: providing a sapphire substrate, the sapphire substrate having a plurality of protrusions on an upper surface thereof; forming an un-doped GaN layer on the upper surface of the sapphire substrate, the un-doped GaN layer partly covering the protrusions to expose a part of each of the protrusions; etching the un-doped GaN layer to expose a top end of each of the protrusions; and forming an n-type GaN layer, an active layer, and a p-type GaN layer sequentially on the top ends of the protrusions and the un-doped GaN layer. | 05-15-2014 |
20140141553 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODE CHIP - A method for manufacturing a light emitting diode chip includes following steps: providing a sapphire substrate, the sapphire substrate having a plurality of protrusions on an upper surface thereof; forming an un-doped GaN layer on the upper surface of the sapphire substrate, the un-doped GaN layer totally covering the protrusions; forming a plurality of semiconductor islands on an upper surface of the un-doped GaN layer by self-organized growth, gaps being formed between two adjacent semiconductor islands to expose a part of the upper surface of the un-doped GaN layer; forming an n-type GaN layer on the exposed part of the upper surface of the un-doped GaN layer, the n-type GaN layer being laterally grown to totally cover the semiconductor islands; forming an active layer on an upper surface of the n-type GaN layer; and forming a p-type GaN layer on the active layer. | 05-22-2014 |
20140183445 | LIGHT EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING THE SAME - An LED package includes a substrate, a buffer layer formed on the substrate, an epitaxial structure formed on the buffer layer, and a plurality of carbon nanotube bundles formed in the epitaxial structure. | 07-03-2014 |
20150034965 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING SAME - An LED includes a substrate and a semiconductor structure mounted on the substrate. A plurality of first holes and a plurality of second holes are defined in the semiconductor structure. The second holes are located above the first holes and communicate with the first holes. A method for manufacturing the LED is also provided. | 02-05-2015 |