Patent application number | Description | Published |
20150179442 | Methods for Forming Crystalline IGZO with a Seed Layer - Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. A seed layer is formed above the substrate. The seed layer has a crystalline structure that is substantially dominant along the c-axis. An IGZO layer is formed above the seed layer. The seed layer may include zinc oxide. A stack of alternating seed layers and IGZO layers may be formed. | 06-25-2015 |
20150179444 | Methods for Forming Crystalline IGZO Through Power Supply Mode Optimization - Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is positioned relative to at least one target. The at least one target includes indium, gallium, zinc, or a combination thereof. A substantially constant voltage is provided across the substrate and the at least one target to cause a plasma species to impact the at least one target. The impacting of the plasma species on the at least one target causes material to be ejected from the at least one target to form an IGZO layer above the substrate. | 06-25-2015 |
20150179446 | Methods for Forming Crystalline IGZO Through Processing Condition Optimization - Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. A layer is formed above the substrate using a PVD process. The layer includes indium, gallium, zinc, or a combination thereof. The PVD process is performed in a gaseous environment having a pressure of between about 1 mT and about 5 mT and including between about 20% and about 100% oxygen gas. The PVD process may be performed at a processing temperature between about 25° C. and about 400° C. The duty cycle of the PVD process may be between about 70% and about 100%. | 06-25-2015 |
20150187574 | IGZO with Intra-Layer Variations and Methods for Forming the Same - Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO) with intra-layer variations and methods for forming such IGZO. At least a portion of a substrate is positioned in a processing chamber. A first sub-layer of an IGZO layer is formed above the at least a portion of the substrate while the at least a portion of the substrate is in the processing chamber. The first sub-layer of the IGZO layer is formed using a first set of processing conditions. A second sub-layer of the IGZO layer is formed above the first sub-layer of the IGZO layer while the at least a portion of the substrate is in the processing chamber. The second sub-layer of the IGZO layer is formed using a second set of processing conditions. The second set of processing conditions is different than the first set of processing conditions. | 07-02-2015 |