Patent application number | Description | Published |
20090073536 | High performance chirped electrode design for large area optoelectronic devices - An electro-optic device with a doped semiconductor base and a plurality of pixels on the semiconductor base, each pixel including: a multiple quantum well formed on the semiconductor base, an oppositely doped semiconductor layer on the multiple quantum well, and a top electrode on the semiconductor layer, the top electrode shaped to produce an approximately uniform lateral resistance in the pixel. An embodiment is a large area modulator for modulating retro-reflector systems, which typically use large area surface-normal modulators with large lateral current flow. Uniform resistance to each part of the modulator decreases location dependence of frequency response. A chirped grid electrode balances semiconductor sheet resistance and metal line resistance components of the series resistance. | 03-19-2009 |
20100139406 | Micromechanical chemical sensors with multiple chemoselective resonant elements and frequency division multiplexed readout - Micro-opto-mechanical chemical sensors and methods for simultaneously detecting and discriminating between a variety of vapor-phase analytes. One embodiment of the sensor is a photonic microharp chemical sensor with an array of closely spaced microbridges, each differing slightly in length and coated with a different sorbent polymer. The microbridges can be excited photothermally, and the microbridges can be optically interrogated using microcavity interferometry. Other actuation methods include piezoelectric, piezoresistive, electrothermal, and magnetic. Other read-out techniques include using a lever arm and other interferometric techniques. | 06-10-2010 |
20100188725 | High Performance Chirped Electrode Design for Large Area Optoelectronic Devices - An electro-optic device with a doped semiconductor base and a plurality of pixels on the semiconductor base. Pixels include oppositely doped semiconductor layer and a top electrode formed on the oppositely doped semiconductor layer. The top electrode has a grid pattern with at least one busbar and a plurality of fingers extending from the busbar, and spacing between the fingers decreases with distance from the bondpad along the busbar. Each pixel can also include a multiple quantum well formed on the semiconductor base. The top electrode shape produces an approximately uniform lateral resistance in the pixel. An embodiment is a large area modulator for modulating retro-reflector systems, which typically use large area surface-normal modulators with large lateral current flow. Uniform resistance to each part of the modulator decreases location dependence of frequency response. A chirped grid electrode balances semiconductor sheet resistance and metal line resistance components of the series resistance. | 07-29-2010 |
20100238454 | Optical MEMS Chemical Sensor Array - A change in mass of a microbridge in a mass sensor can be sensed by applying a time-varying amplitude modulated electrostatic force to excite the microbridge into resonance at the frequency of amplitude modulation. An optical energy is then transmitted at a wavelength close to a resonant wavelength of a Fabry-Perot microcavity, which is formed by etching a movable reflective mirror into a region of the microbridge and by etching a fixed reflective minor in a region spaced apart from the microbridge. The two mirrors are interconnected by an optical waveguide. The movable mirror and fixed mirror reflect the optical energy to a receiver, and a change in the Fabry-Perot microcavity's reflectivity is interferometrically determined. The change in reflectivity indicates a change in the microbridge's resonant frequency due to increased mass of the microbridge resulting from sorption of a target chemical by a layer of chemoselective material deposited on the microbridge. | 09-23-2010 |
20110051217 | High Performance Chirped Electrode Design for Large Area Optoelectronic Devices - An electro-optic device with a doped semiconductor base and a plurality of pixels on the semiconductor base. Pixels include oppositely doped semiconductor layer and a top electrode formed on the oppositely doped semiconductor layer. The top electrode has a grid pattern with at least one busbar and a plurality of fingers extending from the busbar, and spacing between the fingers decreases with distance from the bondpad along the busbar. Each pixel can also include a multiple quantum well formed on the semiconductor base. The top electrode shape produces an approximately uniform lateral resistance in the pixel. An embodiment is a large area modulator for modulating retro-reflector systems, which typically use large area surface-normal modulators with large lateral current flow. Uniform resistance to each part of the modulator decreases location dependence of frequency response. A chirped grid electrode balances semiconductor sheet resistance and metal line resistance components of the series resistance. | 03-03-2011 |
20110188112 | Nonlinear Frequency Conversion in Nanoslot Optical Waveguides - A waveguide device for frequency mixing or conversion through birefringent phase matching, having two suspended horizontal waveguides with an air-filled horizontal nanoslot between them. The waveguides are formed of a material with a high nonlinear susceptibility, and one waveguide can be n-doped with the other waveguide slab being p-doped. The system can be tuned to operate at different frequencies by varying the nanoslot gap distance by electrostatically actuating the suspended air-clad waveguides. | 08-04-2011 |
20110292485 | Integrated Angle of Arrival Sensing and Duplex Communication with Cats-Eye Multiple Quantum Well Modulating Retroreflector - A modulating retroreflector system includes a modulating retroreflector having a plurality of multiple quantum well modulator pixels and at least one transimpedance amplifier. The transimpedance amplifier receives a photocurrent generated by at least one of the plurality of modulator pixels. Each pixel is capacitively coupled to a current driver, which applies a high frequency digital electrical signal to the pixel when the voltage at the output of the transimpedance amplifier exceeds a threshold value. The modulated output of the retroreflector is reflected toward the source of the received optical beam. The system activates high frequency current drivers for only the illuminated pixels, eliminating the need for a separate angle of incidence sensor and reducing power requirements. A low frequency FSK signal can be superimposed on the DC optical interrogation beam and recovered as the unfiltered output of the transimpedance amplifier, to provide simultaneous bidirectional communication without a half-duplex communication protocol. | 12-01-2011 |
20130294719 | Nonlinear Frequency Conversion in Nanoslab Optical Waveguides - A waveguide device for frequency mixing or conversion through birefringent phase matching, having a horizontal waveguide suspended above a substrate. The waveguide is formed of a zinc blende type III-V semiconductor material with a high nonlinear susceptibility. | 11-07-2013 |
20130330232 | CAVITY OPTO-MECHANICAL SENSOR ARRAY - A mass sensor system including multiple Fabry-Perot microcavities connected in parallel by multiple waveguides. Each of the mass sensors includes a microbridge having a fundamental resonance frequency, and a movable reflective mirror etched into the microbridge; a fixed reflective mirror etched in a substrate, the fixed reflective mirror being fixed to the substrate in a region spaced apart from the movable reflective mirror; and an optical waveguide etched in the substrate that connects the movable mirror and the fixed mirror forming the Fabry-Perot microcavity interferometer. The system includes a tunable continuous-wave laser operative to optically interrogate the Fabry-Perot microcavity of each of the plurality of mass sensors, and a receiver operative to receive sensor signals from each of the plurality of mass sensors, the sensor signals comprising reflective signals and transmitted signals. A continuous-wave laser may generate optical forces that modify the motion, dynamics, or mechanical Q-factor of the microbridge. | 12-12-2013 |