Wen-Jia
Wen-Jia Hsieh, Pusin Township TW
Patent application number | Description | Published |
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20150084137 | MECHANISM FOR FORMING METAL GATE STRUCTURE - Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a metal gate stack formed over the semiconductor substrate. The semiconductor device also includes an insulating layer formed over the semiconductor substrate and surrounding the metal gate stack, wherein the metal gate stack includes a metal gate electrode. The semiconductor device further includes a metal oxide structure formed over the insulating layer and in direct contact with the insulating layer. The metal oxide structure includes an oxidized material of the metal gate electrode. | 03-26-2015 |
Wen-Jia Huang, Hsinchu City TW
Patent application number | Description | Published |
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20100308348 | LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF - The disclosure provides a light-emitting device comprising a light-emitting epitaxy structure. The light-emitting epitaxy structure has a modulus of a critical reverse voltage not less than 50 volts while the light-emitting epitaxy structure is reverse-biased at a current density of −10 μA/mm | 12-09-2010 |
Wen-Jia Zhang, Beijing CN
Patent application number | Description | Published |
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20110300443 | ELECTRODE SLURRY OF LITHIUM BATTERY AND ELECTRODE OF LITHIUM BATTERY - The present disclosure relates to an electrode slurry of a lithium battery and an electrode formed from the electrode slurry. The electrode slurry includes an active component, a conductive agent, a binder, an organic solvent, and octylphenolpoly(ethyleneglycolether) | 12-08-2011 |