Patent application number | Description | Published |
20080273379 | Programming a normally single phase chalcogenide material for use as a memory of FPLA - A memory may be implemented with a stable chalcogenide glass which is defined as a generally amorphous chalcogenide material that does not change to a generally crystalline phase when exposed to 200° C. for 30 minutes or less. Different states may be programmed by changing the threshold voltage of the material. The threshold voltage may be changed with pulses of different amplitude and/or different pulse fall times. Reading may be done using a reference level between the threshold voltages of the two different states. A separate access device is generally not needed. | 11-06-2008 |
20090010051 | Reading a phase change memory - A phase change memory cell may be read by driving a current through the cell higher than its threshold current. A voltage derived from the selected column may be utilized to read a selected bit of a phase change memory. The read window or margin may be improved in some embodiments. A refresh cycle may be included at periodic intervals. | 01-08-2009 |
20090116281 | Reading Phase Change Memories - A read current high enough to threshold a phase change memory element may be used to read the element without thresholding the memory element. The higher current may improve performance in some cases. The memory element does not threshold because the element is read and the current stopped prior to triggering the memory element. | 05-07-2009 |
20090257275 | Seasoning phase change memories - A seasoned phase change memory has been subjected to a longer pulse to adjust resistance levels prior to use of the phase change memory. | 10-15-2009 |
20090300467 | Using a Phase Change Memory as a High Volume Memory - A phase change memory may be utilized in place of more conventional, higher volume memories such as static random access memory, flash memory, or dynamic random access memory. To account for the fact that the phase change memory is not yet a high volume technology, an error correcting code may be incorporated. The error correcting code may be utilized in ways which do not severely negatively impact read access times, in some embodiments. | 12-03-2009 |
20110103141 | Reading a Phase Change Memory - A phase change memory cell may be read by driving a current through the cell higher than its threshold current. A voltage derived from the selected column may be utilized to read a selected bit of a phase change memory. The read window or margin may be improved in some embodiments. A refresh cycle may be included at periodic intervals. | 05-05-2011 |
20110176358 | Reading Phase Change Memories - A read current high enough to threshold a phase change memory element may be used to read the element without thresholding the memory element. The higher current may improve performance in some cases. The memory element does not threshold because the element is read and the current stopped prior to triggering the memory element. | 07-21-2011 |
20120057393 | Reading A Phase Change Memory - A phase change memory cell may be read by driving a current through the cell higher than its threshold current. A voltage derived from the selected column may be utilized to read a selected bit of a phase change memory. The read window or margin may be improved in some embodiments. A refresh cycle may be included at periodic intervals. | 03-08-2012 |
20120113711 | Using A Bit Specific Reference Level To Read A Memory - A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read window or margin may be improved in some embodiments, | 05-10-2012 |
20120287698 | Using a Bit Specific Reference Level to Read a Memory - A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read. window or margin may be improved in some embodiments. | 11-15-2012 |
20140098604 | Immunity of Phase Change Material to Disturb in the Amorphous Phase - Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb. | 04-10-2014 |
20140328121 | Immunity of Phase Change Material to Disturb in the Amorphous Phase - Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb. | 11-06-2014 |
20150055409 | Seasoning Phase Change Memories - A seasoned phase change memory has been subjected to a longer pulse to adjust resistance levels prior to use of the phase change memory. | 02-26-2015 |