Voutsas
Apostolos Voutsas, Portland, OR US
Patent application number | Description | Published |
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20150029229 | Adjustable Size Scrollable Display - A scrollable display is provided with an adjustable screen size and an associated image scaling method. The display includes a case or housing, with an exit slot. The display also includes a flexible electronic screen having an input to accept electronic image signals, and a surface to display images. A screen extension mechanism is embedded in the case and connected to the flexible electronic screen interior edge. The screen extension mechanism is configured to permit the extension of the flexible electronic screen, through an exit slot, into a plurality of exposed widths. An image scaler has an input to accept a screen width measurement corresponding to an exposed width of the flexible electronic screen. The image scaler has an output to supply electronic image signals scaled to the screen width measurement, to form an image on an exposed section of the flexible electronic screen. | 01-29-2015 |
Apostolos T. Voutsas, Vancouver, WA US
Patent application number | Description | Published |
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20080224205 | Vertical Thin-Film Transistor with Enhanced Gate Oxide - A method is provided for forming a low-temperature vertical gate insulator in a vertical thin-film transistor (V-TFT) fabrication process. The method comprises: forming a gate, having vertical sidewalls and a top surface, overlying a substrate insulation layer; depositing a silicon oxide thin-film gate insulator overlying the gate; plasma oxidizing the gate insulator at a temperature of less than 400° C., using a high-density plasma source; forming a first source/drain region overlying the gate top surface; forming a second source/drain region overlying the substrate insulation layer, adjacent a first gate sidewall; and, forming a channel region overlying the first gate sidewall, in the gate insulator interposed between the first and second source/drain regions. When the silicon oxide thin-film gate insulator is deposited overlying the gate a Si oxide layer, a low temperature deposition process can be used, so that a step-coverage of greater than 65% can be obtained. | 09-18-2008 |
Stratis Apostle Voutsas, Mclean, VA US
Patent application number | Description | Published |
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20140279685 | SYSTEM AND METHOD FOR MONETIZING AN EXTERNALITY - A method is disclosed that includes calculating by an intermediary, using a computing apparatus, an estimated social dividend achieved as a monetization of an externality accruing to the public. The method further includes advancing funds, by a partaking entity, related to the externality. The method also includes paying, by the intermediary, the social dividend as estimated. The method further includes receiving, by the partaking entity, an incentive for advancing funds related to the externality. | 09-18-2014 |