Patent application number | Description | Published |
20100153214 | Accessing Needs of Customers Based on Dispatched Services - Embodiments of the disclosed technology comprise a dispatch management system and method. Customer information is received by a first company and forwarded with dispatch instructions to a second company, namely, a dispatch company which handles dispatching a service technician or other support representative to the customer. The dispatch company then sends to the first company customer information regarding products and/or service related to the customer. It is then determined which products and/or services are to be advertised to the customer based on the customer information and information received from the dispatch company. Advertisements are then sent to the customer based on this determination. | 06-17-2010 |
20110087565 | Methods and Systems for Providing Wireless Enabled Inventory Peering - Systems and methods for providing wireless enabled inventory peering are disclosed. According to one embodiment, a system for providing wireless enabled inventory peering includes a wireless enabled inventory peering vehicle system (WEIPVS). The WEIPVS is configured to receive an inventory search request. In response to receiving the inventory search request, the WEIPVS searches inventories of proximate technician vehicles. If a needed inventory item is located in an inventory of a proximate technician vehicle, the WEIPVS generates a request for an inventory transfer and sends the request to the proximate technician vehicle. When the item is received at the WEIPVS, the WEIPVS updates the inventory associated with the WEIPVS. | 04-14-2011 |
20130091040 | Methods and Systems for Providing Wireless Enabled Inventory Peering - Systems and methods for providing wireless enabled inventory peering are disclosed. According to one embodiment, a system for providing wireless enabled inventory peering includes a wireless enabled inventory peering vehicle system (WEIPVS). The WEIPVS is configured to receive an inventory search request. In response to receiving the inventory search request, the WEIPVS searches inventories of proximate technician vehicles. If a needed inventory item is located in an inventory of a proximate technician vehicle, the WEIPVS generates a request for an inventory transfer and sends the request to the proximate technician vehicle. When the item is received at the WEIPVS, the WEIPVS updates the inventory associated with the WEIPVS. | 04-11-2013 |
Patent application number | Description | Published |
20130307032 | METHODS OF FORMING CONDUCTIVE CONTACTS FOR A SEMICONDUCTOR DEVICE - One illustrative method disclosed herein involves forming a contact opening in a layer of insulating material, forming a layer of conductive material above the layer of insulating material that overfills the contact opening, performing at least one chemical mechanical polishing process to remove portions of the conductive material positioned outside of the contact opening and thereby define a conductive contact positioned in the contact opening and, after performing the chemical mechanical polishing process, performing a selective metal deposition process to selectively form additional metal material on an upper surface of the conductive contact. | 11-21-2013 |
20140145257 | SEMICONDUCTOR DEVICE HAVING A METAL RECESS - Provided is a semiconductor device (e.g., transistor such as a FinFET or planar device) having a a liner layer and a metal layer (e.g., Tungsten (W)) in a trench (e.g., via CVD and/or ALD). A single chamber (e.g., an extreme fill chamber) will be utilized to separately etch back the liner layer and the metal layer. In general, the liner layer may be etched back further than the metal layer to provide for larger contact and lower resistance. After etching is complete, a bottom-up fill/growth of metal (e.g., W) will be performed (e.g., via CVD in a W chamber or the like) to increase the presence of gate metal in the trench. | 05-29-2014 |
20140327140 | INTEGRATED CIRCUITS AND METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH IMPROVED CONTACT STRUCTURES - Integrated circuits and methods for fabricating integrated circuits are provided. In an exemplary embodiment, a method for fabricating integrated circuits includes providing a semiconductor substrate disposed with a device therein and/or thereon. A contact structure including a barrier layer and a plug metal overlying the barrier layer is formed in electrical contact with the device. A hardmask is formed overlying the contact structure. The method includes performing an etch to form a via opening through the hardmask and to expose the barrier layer and the plug metal. Further, the method removes a remaining portion of the hardmask with a wet etchant, while the contact structure is configured to inhibit the wet etchant from etching the barrier layer. In the method, the via opening is filled with a conductive material to form an interconnect to the contact structure. | 11-06-2014 |
20140353734 | SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION WITH REDUCED GATE AND CONTACT RESISTANCES - Semiconductor structures with reduced gate and/or contact resistances and fabrication methods are provided. The method includes: providing a semiconductor device, which includes forming a transistor of the semiconductor device, where the transistor forming includes: forming a T-shaped gate for the transistor, the T-shaped gate being T-shaped in elevational cross-section; and forming an inverted-T-shaped contact to an active region of the transistor, the inverted-T-shaped contact including a conductive structure with an inverted T-shape in elevational cross-section. | 12-04-2014 |
20150056796 | METHOD FOR FORMING A SEMICONDUCTOR DEVICE HAVING A METAL GATE RECESS - Provided are approaches of forming a semiconductor device (e.g., transistor such as a FinFET or planar device) having a gate metal recess. In one approach, a liner layer and a metal layer (e.g., W) are applied in a trench (e.g., via CVD and/or ALD). Then, a single chamber (e.g., an extreme fill chamber) will be utilized to separately etch back the liner layer and the metal layer. In general, the liner layer may be etched back further than the metal layer to provide for larger contact and lower resistance. After etching is complete, a bottom-up fill/growth of metal (e.g., W) will be performed (e.g., via CVD in a W chamber or the like) to increase the presence of gate metal in the trench. | 02-26-2015 |
20150235957 | INTEGRATED CIRCUITS WITH IMPROVED CONTACT STRUCTURES - Integrated circuits with improved contact structures are provided. In an exemplary embodiment, an integrated circuit includes a semiconductor substrate disposed with a device therein and/or thereon. The integrated circuit includes a contact structure in electrical contact with the device. The contact structure includes a plug metal and a barrier layer, and the barrier layer is selected from fluorine-free tungsten (FFW), tungsten carbide, and tungsten nitride. The integrated circuit further includes a dielectric material overlying the semiconductor substrate. Also, the integrated circuit includes an interconnect formed within the dielectric material and in electrical contact with the contact structure. | 08-20-2015 |