Patent application number | Description | Published |
20080202984 | MIXED METAL OXIDE ADDITIVES - The present invention is directed to methods for mitigating the deleterious effect of at least one metal on an FCC catalyst. This objective is achieved by using a mixed metal oxide compound comprising magnesium and aluminum, that has not been derived from a hydrotalcite compound, and having an X-ray diffraction pattern displaying at least a reflection at a two theta peak position at about 43 degrees and about 62 degrees, wherein the ratio of magnesium to aluminum in the compound is from about 0.6:1 to about 10:1. In one embodiment, the ratio of magnesium to aluminum in the compound is from about 1:1 to about 6:1. In one embodiment, the ratio of magnesium to aluminum in the compound is from about 1.5:1 to about 10:1. In another embodiment, the invention is directed to methods wherein the ratio of magnesium to aluminum in the compound is from about 1.5:1 to about 6:1. | 08-28-2008 |
20100025297 | ADDITIVES FOR METAL CONTAMINANT REMOVAL - The present invention is directed to catalytic cracking additives comprising a metals trapping material; and a high activity catalyst. The present invention is directed to processes for the catalytic cracking of feedstock comprising contacting said feedstock under catalytic cracking conditions with a composition comprising a bulk catalyst and a catalytic cracking additive, wherein the catalytic cracking additive comprises a metals trapping material; and a high activity catalyst. The invention is also directed to processes for increasing the performance of a bulk catalyst in the presence of at least one metal comprising contacting a feedstock with a catalytic cracking additive comprising a metals trapping material; and a high activity catalyst. | 02-04-2010 |
20120318713 | METHODS OF RECOVERING RARE EARTH ELEMENTS - Processes described include reacting a fresh or spent catalyst, or sorbent, with a solution containing an extracting agent (such as an acid or a base). Preferably, the catalyst contains both alumina and a molecular sieve (or a sorbent), and the reaction is performed under relatively mild conditions such that the majority of the base material does not dissolve into the solution. Thus, the catalyst can be re-used, and in certain instances the catalyst performance even improves, with or without re-incorporating certain of the metals back into the catalyst. Additionally, metals contained in the catalyst, such as Na, Mg, Al, P, S, Cl, K, Ca, V, Fe, Ni, Cu, Zn, Sr, Zn Sb, Ba, La, Ce, Pr, Nd, Pb, or their equivalent oxides, can be removed from the catalyst. Some of the metals that are removed are relatively valuable (such as the rare earth elements of La, Ce, Pr and Nd). | 12-20-2012 |
20140072509 | METHODS OF RECOVERING RARE EARTH ELEMENTS - Processes described include reacting a fresh or spent catalyst, or sorbent, with a solution containing an extracting agent (such as an acid or a base). Preferably, the catalyst contains both alumina and a molecular sieve (or a sorbent), and the reaction is performed under relatively mild conditions such that the majority of the base material does not dissolve into the solution. Thus, the catalyst can be re-used, and in certain instances the catalyst performance even improves, with or without re-incorporating certain of the metals back into the catalyst. Additionally, metals contained in the catalyst, such as Na, Mg, Al, P, S, Cl, K, Ca, V, Fe, Ni, Cu, Zn, Sr, Zn Sb, Ba, La, Ce, Pr, Nd, Pb, or their equivalent oxides, can be removed from the catalyst. Some of the metals that are removed are relatively valuable (such as the rare earth elements of La, Ce, Pr and Nd). | 03-13-2014 |
Patent application number | Description | Published |
20130272333 | Laser Diode Device - A laser diode device is specified, comprising a housing having a mounting part and a laser diode chip based on a nitride compound semiconductor material in the housing on the mounting part, wherein the laser diode chip is mounted directly on the mounting part using a solder layer, and the solder layer has a thickness of greater than or equal to 3 μm. | 10-17-2013 |
20130343419 | Laser Diode Assembly - A laser diode assembly includes a housing having a housing part and a mounting part, which is connected to the housing part and which extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 2 μm is arranged between the laser diode chip and the mounting part. The laser diode chip has a radiation coupling-out area, on which a crystalline protective layer is applied. | 12-26-2013 |
20140092931 | Laser Diode Assembly - A laser diode assembly includes a housing having a housing part and a mounting part that is connected to the housing part and that extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 3 μm is arranged between the laser diode chip and the mounting part. | 04-03-2014 |
20140146842 | Semiconductor Stripe Laser - A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm | 05-29-2014 |
20140217425 | Radiation-Emitting Semiconductor Component - A radiation-emitting semiconductor component includes a semiconductor body. The semiconductor body has a semiconductor layer sequence having an active region provided for generating radiation. The semiconductor component has a waveguide, which is provided for laterally guiding the radiation generated in the active region and which extends between a mirror surface and a coupling-out surface. The waveguide meets the mirror surface perpendicularly and forms an acute angle with a normal to the coupling-out surface. | 08-07-2014 |
20140341247 | Laser Diode Device - A laser diode device has a housing with a mounting part and a laser diode chip, which is based on a nitride compound semi-conductor material, in the housing on the mounting part. The laser diode chip is mounted directly on the mounting part by means of a solder layer and the solder layer has a thickness of greater than or equal to 3 μm. | 11-20-2014 |
20140362883 | Laser Diode Assembly - A laser diode assembly includes a housing having a housing part and a mounting part, which is connected to the housing part and which extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 2 μm is arranged between the laser diode chip and the mounting part. The laser diode chip has a radiation coupling-out area, on which a crystalline protective layer is applied. | 12-11-2014 |
20150288138 | Laser Diode Assembly - A laser diode assembly includes a housing having a housing part and a mounting part that is connected to the housing part and that extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 3 μm is arranged between the laser diode chip and the mounting part. | 10-08-2015 |