Van Hove
Ben Paul Karl Van Hove, Antwerpen BE
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20080256820 | Gas Drying Device - Gas drying device, consisting of a desiccant dryer ( | 10-23-2008 |
20090007783 | Method for Drying a Gas and Device Applied Thereby - Method for drying a gas from a compressor ( | 01-08-2009 |
Jos Van Hove, Vlaardingen NL
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20100010358 | System and Method For The Detection of Acute Myocardial Infarction - A system and method are provided for the detection of acute myocardial infarction (AMI) using a staged approach for accurate and rapid detection. Physiological signals in a patient's body are sensed and corresponding physiological parameters are derived in a staged approach in order to determine the probability that AMI is occurring in a patient in a first detection stage. If the computed probability from physiological signals indicates the possibility of AMI, then the patient is prompted, such as through a patient-wearable device, to answer specific AMI-related questions to assist in diagnosis of AMI in a second stage. AMI is detected when the computed probability in the second stage exceeds a predefined detection threshold. A patient or physician alert may then be generated, which may further include the transfer of data via a communication link or network, in response to an AMI detection signal. | 01-14-2010 |
Jos W. Van Hove, Schiedam NL
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20080208007 | Digital Pen to Capture Data in Ambulatory Monitored Patients - A medical device system and method for monitoring a patient include a monitoring device for storing data relating to the patient and a digital pen for digitizing and storing data handwritten by the patient. A control module is configured to aggregate data stored by the monitoring device and handwritten data stored by the digital pen. | 08-28-2008 |
Marleen Van Hove, Leuven BE
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20120326215 | METHOD FOR FABRICATION OF III-NITRIDE DEVICE AND THE III-NITRIDE DEVICE THEREOF - A III-nitride device is provided comprising a semiconductor substrate; a stack of active layers on the substrate, each layer comprising a III-nitride material; a gate, a source and a drain contact on the stack, wherein a gate, a source and a drain region of the substrate are projections of respectively the gate, the source and the drain contact in the substrate; and a trench in the substrate extending from a backside of the substrate (side opposite to the one in contact with the stack of active layers) to an underlayer of the stack of active layers in contact with the substrate, the trench completely surrounding the drain region, being positioned in between an edge of the gate region towards the drain and an edge of the drain region towards the gate and having a width such that the drain region of the substrate is substantially made of the semiconductor material. | 12-27-2012 |
Marleen Van Hove, Blanden BE
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20100176421 | DAMASCENE CONTACTS ON III-V CMOS DEVICES - A method for manufacturing a III-V CMOS device is disclosed. The device includes a first and second main contact and a control contact. In one aspect, the method includes providing the control contact by using damascene processing. The method thus allows obtaining a control contact with a length of between about 20 nm and 5 μm and with good Schottky behavior. Using low-resistive materials such as Cu allows reducing the gate resistance thus improving the high-frequency performance of the III-V CMOS device. | 07-15-2010 |
20120319169 | CMOS COMPATIBLE METHOD FOR MANUFACTURING A HEMT DEVICE AND THE HEMT DEVICE THEREOF - A method for manufacturing a III-nitride HEMT having a gate electrode and source and drain ohmic contacts is provided, comprising providing a substrate; forming a stack of III-nitride layers on the substrate; forming a first passivation layer comprising silicon nitride overlying and in contact with an upper layer of the stack of III-nitride layers, wherein the first passivation layer is deposited in-situ with the stack of III-nitride layers; forming a dielectric layer overlying and in contact with the first passivation layer; forming a second passivation layer comprising silicon nitride overlying and in contact with the dielectric layer wherein the second passivation layer is deposited at a temperature higher than 450° C. by LPCVD or MOCVD or any equivalent technique; and thereafter forming the source and drain ohmic contacts and the gate electrode. | 12-20-2012 |
20140346568 | Low Temperature Ohmic Contacts for III-N Power Devices - The disclosure relates to a method for manufacturing an Au-free ohmic contact for an III-nitride (III-N) device on a semiconductor substrate and to a III-N device obtainable therefrom. The III-N device includes a buffer layer, a channel layer, a barrier layer, and a passivation layer. A 2DEG layer is formed at an interface between the channel layer and the barrier layer. The method includes forming a recess in the passivation layer and in the barrier layer up to the 2DEG layer, and forming an Au-free metal stack in the recess. The metal stack comprises a Ti/Al bi-layer, with a Ti layer overlying and in contact with a bottom of the recess, and a Al layer overlying and in contact with the Ti layer. A thickness ratio of the Ti layer to the Al layer is between 0.01 to 0.1. After forming the metal stack, a rapid thermal anneal is performed. Optionally, prior to forming the Ti/Al bi-layer, a silicon layer may be formed in contact with the recess. | 11-27-2014 |
Matthias Van Hove, Luxembourg LU
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20140134377 | METHOD OF PRODUCING A COMPOSITE SHELL ELEMENT, COMPOSITE SHELL ELEMENT, MEANS OF TRANSPORT AND USE - Systems and methods for fabrication of composite shell elements and to the assembly of large scale structures comprising such composite shell elements are provided. The composite shell elements comprise two regions in which the resin is cured to different levels. As a consequence, the flexibility of the first region is greater than the flexibility of the second region. Since the first region defines a bending line, the composite shell element can be deformed along the bending line during assembly of the large scale structure. Thus, tolerances in fabrication of the composite shell elements may be compensated for in a time-efficient manner without the need for applying a shimming process. | 05-15-2014 |
Paul Joseph Van Hove, Graauw NL
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20110240010 | PROCESS USING HYDROCYCLONES - The present invention concerns a process for preparing of slurries containing suspended and dissolved particles and a solution as well as a slurry are provided onto a hydrocyclone equipment, disk centrifuge or nozzle centrifuge equipment. The dry matter concentration in the collected slurry is higher than the concentration of the mixture of the slurry and the solution as such. The use of a hydrocyclone stage for this specific purpose is disclosed as well. | 10-06-2011 |
Sarah Van Hove, Brussels BE
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20150129617 | Beverage Dispensing Unit with Openable Pinch Valve - A dispensing unit for dispensing a beverage from a pressurized container having a tapping column fixed to and extending normal to the top surface of a top plate with an opening and forming an elbow is disclosed. The column has an elongated inner channel bringing in fluid communication the support plate with a tapping pinch valve located in a tapping head at the elbow. The tapping pinch valve has jaws for receiving in pinching relationship the outlet end of the dispensing line and controlling flow of liquid by varying the distance between the jaws from a closed to an open position. A flexible dispensing line, having inlet and outlet ends, extends in the channel. The outlet end engages the pinch valve, and the inlet end connects to a keg. A device for opening the channel includes the pinch valve so a distance larger than the open position separates the jaws. | 05-14-2015 |
20150129618 | Compact Beverage Dispensing Unit - A beverage dispensing device including a base having a support plate is disclosed. The device has a peripheral wall jutting out of the bottom of the support plate and extending along the perimeter of the support plate defining with the bottom surface an inner volume of the base. A source of pressurized gas is lodged in the inner volume of the base, with a device for connecting the source of pressurized gas to the interior of a beverage container outside the inner volume of the base. An elongated tapping column extends normal to the top surface of the base, having an elongated inner channel bringing in fluid communication the inner volume with a tapping valve head located at the opposite top, outlet end of the tapping column. The height of the peripheral wall allows the beverage dispensing device to dispense beverages when standing on the top surface of a counter. | 05-14-2015 |
Tammy L. Van Hove, Elgin, MN US
Patent application number | Description | Published |
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20120072916 | FUTURE SYSTEM THAT CAN PARTICIPATE IN SYSTEMS MANAGEMENT ACTIVITIES UNTIL AN ACTUAL SYSTEM IS ON-LINE - Hardware configuration management is provided. A hardware configuration manager includes a proposed new hardware configuration item for an existing production environment and its hardware configuration management software. A completed detailed setup of the management of the proposed hardware configuration item is completed before the proposed hardware configuration item is available. The detailed setup includes at least configuring policies of the proposed hardware configuration item. The hardware configuration manager also comprises a device for preventing scheduled tasks from running until a predefined period following activation of a new hardware configuration item that has the completed detailed setup and the proposed hardware configuration item is mapped thereto. | 03-22-2012 |
Tammy Lynn Van Hove, Elgin, MN US
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20090105999 | METHOD, APPARATUS, AND COMPUTER PROGRAM PRODUCT FOR IMPLEMENTING IMPORTATION AND CONVERGING SYSTEM DEFINITIONS DURING PLANNING PHASE FOR LOGICAL PARTITION (LPAR) SYSTEMS - Hardware and partition information of an existing LPAR system is collected and stored in a first system plan file. The first system plan file is applied to a partition planning tool. The partition planning tool identifies hardware to be reused in a second LPAR system and filters hardware to be excluded from the second LPAR system. The partition planning tool creates a plan for the second LPAR system using the identified hardware to be reused and the partition information. The created plan for the second LPAR system is applied to a partition deployment tool to partition the second LPAR system. The created plan for the second LPAR system is used to move and place hardware to be reused in the second LPAR system. | 04-23-2009 |