Patent application number | Description | Published |
20080280288 | Assay Method to Predict Sensitivity of Cancer Cell to Anticancer Drug - If a cancer cell sampled from a cancer patient by biopsy or the like can be examined with respect to its expressed molecules to evaluate sensitivity of the cancer cell to the present compound, the present compound can be selectively administered only to the cancer patient who is expected to benefit from antitumor activity of the present compound, thereby to enhance the therapeutic effect and reduce unnecessary adverse effects. Specifically, the characteristics of a cancer cell with respect to “low level expression of pRB”, “positive expression of p16” and “high level expression of cyclin E” are demonstrated to be useful as markers for sensitivity of the cancer cell to the present compound. Therefore, these characteristics of a cancer cell can be examined to evaluate previously sensitivity of the cancer cell to the present compound. | 11-13-2008 |
20100092490 | METHOD FOR ASSAY ON THE EFFECT OF VASCULARIZATION INHIBITOR - The present invention provides a method of predicting the antitumor effect of an angiogenesis inhibitor. It is possible to predict the antitumor effect of an angiogenesis inhibitor by evaluating the EGF dependency of a tumor cell for proliferation and/or survival and using the EGF dependency as an indicator. Since the antitumor effect of an angiogenesis inhibitor correlates with the EGF dependency of a tumor cell for proliferation and/or survival, the angiogenesis inhibitors is capable of producing excellent antitumor effect when combined with a substance having EGF inhibitory activity. | 04-15-2010 |
20130085152 | Method For Assay On The Effect Of Vascularization Inhibitor - The present invention provides a method of predicting the antitumor effect of an angiogenesis inhibitor. It is possible to predict the antitumor effect of an angiogenesis inhibitor by evaluating the EOF dependency of a tumor cell for proliferation and/or survival and using the EGF dependency as an indicator. Since the antitumor effect of an angiogenesis inhibitor correlates with the EGF dependency of a tumor cell for proliferation and/or survival, the angiogenesis inhibitors is capable of producing excellent antitumor effect when combined with a substance having EGF inhibitory activity. | 04-04-2013 |
Patent application number | Description | Published |
20100207186 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A first region comprises: a semiconductor layer including a columnar portion, a charge storage layer, and a plurality of first conductive layers. The second region comprises: a plurality of second conductive layers formed in the same layer as the plurality of first conductive layers. The plurality of first conductive layers configure a stepped portion at an end vicinity of the first region. The stepped portion is formed in a stepped shape such that positions of ends of the plurality of first conductive layers differ from one another. The plurality of second conductive layers is formed such that positions of ends thereof at an end vicinity of the second region surrounding the first region are aligned in substantially the perpendicular direction to the substrate. | 08-19-2010 |
20100213526 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor memory device comprises a memory string, and a wiring. The memory string comprises a semiconductor layer, a charge storage layer, and a plurality of first conductive layers. The plurality of first conductive layers comprises a stepped portion formed in a stepped shape such that positions of ends of the plurality of first conductive layers differ from one another. The wiring comprises a plurality of second conductive layers extending upwardly from an upper surface of the first conductive layers comprising the stepped portion. The plurality of second conductive layers are formed such that upper ends thereof are aligned with a surface parallel to the substrate, and such that a diameter thereof decreases from the upper end thereof to a lower end thereof. The plurality of second conductive layers are formed such that the greater a length thereof in the perpendicular direction, the larger a diameter of the upper end thereof. | 08-26-2010 |
20110256672 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor memory device comprises a memory string, and a wiring. The memory string comprises a semiconductor layer, a charge storage layer, and a plurality of first conductive layers. The plurality of first conductive layers comprises a stepped portion formed in a stepped shape such that positions of ends of the plurality of first conductive layers differ from one another. The wiring comprises a plurality of second conductive layers extending upwardly from an upper surface of the first conductive layers comprising the stepped portion. The plurality of second conductive layers are formed such that upper ends thereof are aligned with a surface parallel to the substrate, and such that a diameter thereof decreases from the upper end thereof to a lower end thereof. The plurality of second conductive layers are formed such that the greater a length thereof in the perpendicular direction, the larger a diameter of the upper end thereof. | 10-20-2011 |
20140264718 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor memory device comprises a memory string, and a wiring. The memory string comprises a semiconductor layer, a charge storage layer, and a plurality of first conductive layers. The plurality of first conductive layers comprises a stepped portion formed in a stepped shape such that positions of ends of the plurality of first conductive layers differ from one another. The wiring comprises a plurality of second conductive layers extending upwardly from an upper surface of the first conductive layers comprising the stepped portion. The plurality of second conductive layers are formed such that upper ends thereof are aligned with a surface parallel to the substrate, and such that a diameter thereof decreases from the upper end thereof to a lower end thereof. The plurality of second conductive layers are formed such that the greater a length thereof in the perpendicular direction, the larger a diameter of the upper end thereof. | 09-18-2014 |
Patent application number | Description | Published |
20110031546 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SAME - A method for manufacturing a semiconductor device includes: forming a first layer on a substrate; forming a first contact hole in the first layer; burying a sacrificial film in the first contact hole; forming a second layer on the first layer and the first contact hole after burying; forming a second contact hole reaching the sacrificial film in the second layer; removing the sacrificial film from the first contact hole via the second contact hole; and providing a contact electrode in the first contact hole and the second contact hole. | 02-10-2011 |
20130105902 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE | 05-02-2013 |
20130234338 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a plurality of contact electrodes that reach corresponding conductive layers. Each of the contact electrodes includes a columnar portion, a stopper, and a first connection portion. The columnar portion extends in a stacked direction of the stacked body. The stopper covers the side of the columnar portion. The first connection portion is provided at a lower edge of the columnar portion. The first connection portion is in contact with the corresponding conductive layer. A cross-section dimension of the first connection portion in a direction orthogonal to the stacked direction is larger than a cross-section of the lower edge of the columnar portion. An etching rate of a material for the stopper is lower than an etching rate of a material for the first insulating layer. | 09-12-2013 |
20140284685 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes: a stacked body including each of a plurality of electrode layers and each of a plurality of insulating layers stacked alternately; a first interlayer insulating film; a select gate electrode; a second interlayer insulating film; a pair of semiconductor layers; a first insulating film; a second insulating film; a third interlayer insulating film; a first contact electrode connected to one upper end of the pair of semiconductor layers; a second contact electrode connected to the other upper end of the pair of semiconductor layers; a third contact electrode connected to the second contact electrode; a first interconnect layer connected to the first contact electrode; and a second interconnect layer connected to the third contact electrode. | 09-25-2014 |
20150061068 | NON-VOLATILE MEMORY DEVICE, METHOD FOR FABRICATING PATTERN ON WAFER AND METHOD FOR MANUFACTURING NON-VOLATILE MEMORY DEVICE USING SAME - According to an embodiment, a method for fabricating a pattern includes forming a mask covering a first layer, and a second layer selectively provided on the first layer, and forming a groove dividing the first layer and the second layer using the mask. The mask includes a first portion formed on a region of the first layer on a first side of the second layer, a second portion formed on a region of the first layer on a second side of the second layer opposite to the first side, first extending parts extending over the second layer from the first portion toward the second portion, and second extending parts extending over the second layer from the second portion toward the first portion. Each of the second extending parts is located between the first extending parts adjacent to each other. | 03-05-2015 |
Patent application number | Description | Published |
20090015209 | Method of charging a battery array - The method of charging a battery array performs constant current, constant voltage charging of a battery array while detecting the voltage of each battery. The battery array is a plurality of series connected batteries. The charging method detects the voltage of each battery cell at a prescribed sampling rate. When the voltage of any battery cell exceeds a preset maximum specified voltage, charging power is reduced for constant current, constant voltage charging of the battery array. | 01-15-2009 |
20120126750 | METHOD OF CHARGING A BATTERY ARRAY - The method of charging a battery array performs constant current, constant voltage charging of a battery array while detecting the voltage of each battery. The battery array is a plurality of series connected batteries. The charge method detects the voltage of each battery cell at a prescribed sampling rate. When the voltage of any battery cell exceeds a preset maximum specified voltage, charging power is reduced for constant current, constant voltage charging of the battery array. | 05-24-2012 |
20120217931 | METHOD OF CHARGING A BATTERY ARRAY - The method of charging a battery array performs constant current and constant voltage charging of a battery array while detecting the voltage of each battery. The battery array is a plurality of series connected batteries. The charge method detects the voltage of each battery cell at a prescribed sampling rate. When the voltage of any battery cell exceeds a preset maximum specified voltage, charging power is reduced for constant current, constant voltage charging of the battery array. | 08-30-2012 |