Patent application number | Description | Published |
20100123256 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - A semiconductor device includes a semiconductor substrate and a through electrode provided in a through hole formed in the semiconductor substrate. The through electrode partially protrudes from a back surface of the semiconductor substrate, which is opposite to an active surface thereof. The through electrode includes a resin core and a conductive film covering at least a part of the resin core. | 05-20-2010 |
20100291715 | MOUNTED STRUCTURE, LIQUID DROPLET EJECTION HEAD, LIQUID DROPLET EJECTION APPARATUS AND MANUFACTURING METHOD - A liquid droplet ejection head includes: a first substrate having a pressurizing chamber with a nozzle aperture that ejects liquid droplets, and a first surface on which is formed a first wiring electrically connected to the drive element; a second substrate disposed on the first surface of the first substrate and covering the driven element, the second substrate having a second surface and a side surface, the second surface facing in a same direction as the first surface of the first substrate and on which is formed a second wiring, the side surface on which is formed a third wiring that combines the first wiring and the second wiring; a semiconductor element disposed on the second surface of the second substrate, and which drives the driven element; and plating that electrically connects the first wiring, the second wiring, the third wiring, and a connection terminal of the semiconductor element. | 11-18-2010 |
20110271757 | WIRING SUBSTRATE, PIEZOELECTRIC OSCILLATOR, GYROSENSOR AND MANUFACTURING METHOD OF WIRING SUBSTRATE - A wiring substrate includes: a substrate having a first surface and a second surface; a first insulating layer stacked on the first surface; a pad electrode stacked on the first insulating layer; a through electrode connected to the pad electrode; and a second insulating layer disposed between the substrate and the through electrode and between the first insulating layer and the through electrode, wherein a diameter of the through electrode in a connection section between the pad electrode and the through electrode is smaller than a diameter of the through electrode on the second surface side, the first insulating layer, the second insulating layer and the through electrode overlap with each other in a peripheral area of the connection section, when seen from a plan view, and the thickness of the first insulating layer in the area is thinner than the thickness of the first insulating layer in other areas. | 11-10-2011 |
20120235261 | DEVICE-MOUNTED SUBSTRATE, INFRARED LIGHT SENSOR AND THROUGH ELECTRODE FORMING METHOD - A via hole is formed on a base substrate before a device circuit is formed, and thermal oxidation is performed to form a thermal oxidation layer on a surface of the base substrate on which the device circuit is formed and a surface in the via hole. The device circuit having a conductive section is formed on the base substrate after the thermal oxidation, and then, a conductive body is embedded in the via hole. | 09-20-2012 |
20130075896 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - A semiconductor device includes a semiconductor substrate and a through electrode provided in a through hole formed in the semiconductor substrate. The through electrode partially protrudes from a back surface of the semiconductor substrate, which is opposite to an active surface thereof. The through electrode includes a resin core and a conductive film covering at least a part of the resin core. | 03-28-2013 |
20140082936 | METHOD OF MANUFACTURING A WIRING SUBSTRATE - A wiring substrate includes: a substrate having a first surface and a second surface; a first insulating layer stacked on the first surface; a pad electrode stacked on the first insulating layer; a through electrode connected to the pad electrode; and a second insulating layer disposed between the substrate and the through electrode and between the first insulating layer and the through electrode, wherein a diameter of the through electrode in a connection section between the pad electrode and the through electrode is smaller than a diameter of the through electrode on the second surface side, the first insulating layer, the second insulating layer and the through electrode overlap with each other in a peripheral area of the connection section, when seen from a plan view, and the thickness of the first insulating layer in the area is thinner than the thickness of the first insulating layer in other areas. | 03-27-2014 |
20140306342 | SEMICONDUCTOR DEVICE, HAVING THROUGH ELECTRODES, A MANUFACTURING METHOD THEREOF, AND AN ELECTRONIC APPARATUS - A semiconductor device includes a semiconductor substrate and a through electrode provided in a through hole formed in the semiconductor substrate. The through electrode partially protrudes from a back surface of the semiconductor substrate, which is opposite to an active surface thereof. The through electrode includes a resin core and a conductive film covering at least a part of the resin core. | 10-16-2014 |