Patent application number | Description | Published |
20080258058 | Interferometer - A double-biprism electron interferometer is an optical system which dramatically increases the degree of freedom of a conventional one-stage electron interferometer. The double-biprism electron interferometer, however, is the same as the optical system of the single electron biprism interferometer in terms of the one-dimensional shape of an electron hologram formed by filament electrodes, the direction of an interference area and the azimuth of the interference fringes. In other words, the longitudinal direction of the interference area is determined corresponding to the direction of the filament electrodes, and the azimuth of the interference fringes only coincides with and is in parallel with the longitudinal direction of the interference area. | 10-23-2008 |
20080302965 | Electron Interferometer or Electron Microscope - In an electron beam interference system using an electron biprism, which is capable of independently controlling each of the interference fringe spacing s and the interference width W, both of which are important parameters for an interferometer and for an interferogram acquired by the interferometer, an optical system used in a two-stage electron biprism interferometer is adopted. The optical system uses two stages of electron biprisms in an optical axis direction to give the flexibility to the relative magnification relative to a specimen image and that relative to an image of a filament electrode of the electron biprism. In addition, as a two-stage configuration in which two objective lenses ( | 12-11-2008 |
20090045339 | Charged particle beam equipment - Charged particle beam equipment having a rotary mechanism in which shift of the observing/machining position incident to the rotary operation of the equipment having the rotary mechanism can be corrected conveniently with high precision in a plane perpendicular to the optical axis of the optical system of charged particle beam or in a slightly inclining plane. An X-Y shift incident to rotation in a plane is determined from the angular information of a rotary mechanism such as a sample holder, diaphragms or biprisms in the charged particle beam equipment, and then driving or controlling is performed to cancel the X-Y shift. | 02-19-2009 |
20090273789 | Interferometer - A double-biprism electron interferometer is an optical system which dramatically increases the degree of freedom of a conventional one-stage electron interferometer. The double biprism interferometer, however, is the same as the optical system of the single electron biprism in terms of the one-dimensional shape of an electron hologram formed by filament electrodes, the direction of an interference area, and the azimuth of the interference fringes. In other words, the longitudinal direction of the interference area is determined corresponding to the direction of the filament electrodes, and the azimuth of the interference fringes only coincides with and is in parallel with the longitudinal direction of the interference area. An interferometer according to the present invention has upper-stage and lower-stage electron biprisms, and operates with an azimuth angle Φ between filament electrodes of the upper-stage and lower-stage electron biprisms to arbitrarily control an interference area and an azimuth θ of the interference fringes formed therein. | 11-05-2009 |
Patent application number | Description | Published |
20090021866 | Magnetization state control device and magnetic information recording device - The magnetization state of a ferromagnetic material is controlled by applying a current pulse to it while externally applying a weak magnetic field to it. The magnetic state of a ferromagnetic material can be switched between a uniformly magnetized state and a multiple magnetic domain structure by controlling the direction and intensity of the magnetic field applied to it and the intensity and pulse width of the current pulse. When an external magnetic field is applied, the possibility of occurrence of the reversal of the magnetic state upon application of the current pulse shows a hysteresis, and the reversal of the magnetic state can be controlled reliably. The intensity of the magnetic field to be applied may be as weak as a few gauss. Furthermore, by using such magnetic information recording elements, a magnetic information recording device (memory) that can achieve a high degree of integration can be produced. | 01-22-2009 |
20130284925 | ELECTRON BEAM DEVICE - An electron beam device includes a first electron biprism between an acceleration tube and irradiation lens systems, and an electron biprism in the image forming lens system. The first electron biprism splits the electron beam into first and second electron beams, radiated to differently positioned first and second regions on objective plane of an objective lens system having a specimen perpendicular to an optical axis. The first and second electron beams are superposed on the observation plane by the electron biprism of the image forming lens system. The superposed region of those electron beams is observed or recorded. Optical action of the irradiation lens system controls each current density of the first and second electron beams on the objective plane of the objective lens system having the specimen, and distance on electron optics between the first electron biprism and the objective plane of the objective lens system having the specimen. | 10-31-2013 |
20130313432 | INTERFERENCE ELECTRON MICROSCOPE - In an interference electron microscope, a first electron biprism is disposed between an acceleration tube and an illumination-lens system, a mask is disposed between the acceleration tube and the first electron biprism, and the first electron biprism is arranged in a shadow that the mask forms. Current densities of first and second electron beams on a parabolic surface of an objective lens system where a sample is positioned are controlled by a control system by an optical action of the illumination-lens system, the mask is imaged on the parabolic surface of the objective lens system, and an electro-optical length between the first electron biprism and the parabolic surface of the objective lens where the sample is positioned is controlled without generating Fresnel fringes on a sample surface from the mask and the first electron biprism. | 11-28-2013 |