Patent application number | Description | Published |
20090205565 | APPARATUS FOR MANUFACTURING SINGLE-CRYSTAL SILICON CARBIDE - The invention provides an apparatus for manufacturing good quality single-crystal silicon carbide stably without formation of cracks and the like, which apparatus comprises: at least a crucible for accommodating silicon carbide feedstock powder and seed crystal; heat insulation material installed around the crucible; and a heating device for heating the crucible, wherein the outer profile of the crucible includes at least one region of narrower diameter than a vertically adjacent region, insulation material is also installed in the space left by the diameter difference, and thickness of the insulation material at the narrower diameter region is greater than that of the insulation material at the vertically adjacent region. The apparatus for manufacturing single-crystal silicon carbide enables precise control of the temperature gradient inside the crucible, thereby enabling manufacture of good quality single-crystal silicon carbide. | 08-20-2009 |
20100289033 | SINGLE-CRYSTAL SILICON CARBIDE INGOT, AND SUBSTRATE AND EPITAXIAL WAFER OBTAINED THEREFROM - The present invention provides a single-crystal silicon carbide ingot capable of providing a good-quality substrate low in dislocation defects, and a substrate and epitaxial wafer obtained therefrom. | 11-18-2010 |
20100295059 | SIC SINGLE-CRYSTAL SUBSTRATE AND METHOD OF PRODUCING SIC SINGLE-CRYSTAL SUBSTRATE - The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stability. Provided is an SiC single-crystal substrate wherein, when the SiC single-crystal substrate is divided into 5-mm square regions, such regions in which dislocation pairs or dislocation rows having intervals between their dislocation end positions of 5 μm or less are present among the dislocations that have ends at the substrate surface account for 50% or less of all such regions within the substrate surface and the dislocation density in the substrate of dislocations other than the dislocation pairs or dislocation is 8,000/cm | 11-25-2010 |
20110206929 | SINGLE-CRYSTAL SILICON CARBIDE AND SINGLE-CRYSTAL SILICON CARBIDE WAFER - The present invention provides single-crystal silicon carbide and a single-crystal silicon carbide wafer of good-quality that are low in dislocations, micropipes and other crystal defects and enable high yield and high performance when applied to a device, wherein the ratio of doping element concentrations on opposite sides in the direction of crystal growth of the interface between the seed crystal and the grown crystal is 5 or less and the doping element concentration of the grown crystal in the vicinity of the seed crystal is 2×10 | 08-25-2011 |
20110278596 | Epitaxial silicon carbide monocrystalline substrate and method of production of same - The present invention provides an epitaxial SiC monocrystalline substrate having a high quality epitaxial film suppressed in occurrence of step bunching in epitaxial growth using a substrate with an off angle of 6° or less and a method of production of the same, that is, an epitaxial silicon carbide monocrystalline substrate comprised of a silicon carbide monocrystalline substrate with an off angle of 6° or less on which a silicon carbide monocrystalline thin film is formed, the epitaxial silicon carbide monocrystalline substrate characterized in that the silicon carbide monocrystalline thin film has a surface with a surface roughness (Ra value) of 0.5 nm or less and a method of production of the same. | 11-17-2011 |
20110308449 | CRUCIBLE FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE, AND PRODUCTION APPARATUS AND PRODUCTION METHOD FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE - The present invention, which provides a crucible for producing single-crystal silicon carbide, and a production apparatus and a production method for single-crystal silicon carbide, which are capable of stably growing a single-crystal silicon carbide ingot good in crystallinity at high yield, is a crucible for producing single-crystal silicon carbide having a crucible vessel for holding silicon carbide raw material and a crucible cover for attaching a seed crystal and is adapted to sublimate a silicon carbide raw material in the crucible vessel to supply silicon carbide sublimation gas onto a seed crystal attached to the crucible cover and grow single-crystal silicon carbide on the seed crystal, which crucible for producing single-crystal silicon carbide is provided in the crucible vessel and the crucible cover with threaded portions to be screwed together and is provided with a sublimation gas discharge groove or grooves capable of regulating flow rate by relative rotation of the threaded portions; and is a production apparatus for single-crystal silicon carbide equipped with such a crucible and a production method for single-crystal silicon carbide utilizing this apparatus. | 12-22-2011 |
20130029158 | PROCESS FOR PRODUCING EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE OBTAINED BY THE SAME - Disclosed is a process for producing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide film on a single-crystal silicon carbide substrate by chemical vapor deposition. The step of crystal growth in the process comprises a main crystal growth step, which mainly occupies the period of epitaxial growth, and a secondary crystal growth step, in which the growth temperature is switched between a set growth temperature (T | 01-31-2013 |
20130217213 | PRODUCTION PROCESS OF EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE - An object of the present invention is to provide a production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with a small off-angle. | 08-22-2013 |
20130320357 | EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME - Provided are an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film with less stacking faults on a silicon carbide single crystal substrate and a production method therefor. The epitaxial silicon carbide single crystal substrate is produced by growing a silicon carbide epitaxial layer on a silicon carbide single crystal substrate having an off-angle of 4° or less so that the number of stacking faults emitting light at wavelengths ranging from 400 to 600 nm by photoluminescence on the substrate is less than 10/cm | 12-05-2013 |
20140363607 | SILICON CARBIDE SINGLE CRYSTAL WAFER AND MANUFACTURING METHOD FOR SAME - Provided are a method for manufacturing a SiC single crystal having high crystal quality and, in particular, extremely low screw dislocation density and a SiC single crystal ingot obtained by the method. In particular, provided is a silicon carbide single crystal substrate that is a substrate cut from a bulk silicon carbide single crystal grown by the Physical Vapior Transport (PVT) method, in which the screw dislocation density is smaller in the peripheral region than in the center region, so that screw dislocations are partially reduced. | 12-11-2014 |
20150075422 | EPITAXIAL SILICON CARBIDE MONOCRYSTALLINE SUBSTRATE AND METHOD OF PRODUCTION OF SAME - The present invention provides an epitaxial SiC monocrystalline substrate having a high quality epitaxial film suppressed in occurrence of step bunching in epitaxial growth using a substrate with an off angle of 6° or less and a method of production of the same, that is, an epitaxial silicon carbide monocrystalline substrate comprised of a silicon carbide monocrystalline substrate with an off angle of 6° or less on which a silicon carbide monocrystalline thin film is formed, the epitaxial silicon carbide monocrystalline substrate characterized in that the silicon carbide monocrystalline thin film has a surface with a surface roughness (Ra value) of 0.5 nm or less and a method of production of the same. | 03-19-2015 |
Patent application number | Description | Published |
20130106408 | ROTATION DETECTING UNIT AND METHOD FOR MAKING THE SAME | 05-02-2013 |
20130141086 | ROTATION DETECTION DEVICE AND MANUFACTURING METHOD FOR THE SAME - A rotation detector component detects a rotational state of a rotor and sends a rotational detection signal. A signal transmission component is electrically connected with a lead frame of the rotation detector component to transmit the rotational detection signal to an external device. A body portion holds the rotation detector component and a part of the signal transmission component. The body portion is integrally molded of a first resin to cover a joint portion between the lead frame and the signal transmission component, the rotation detector component, and a part of the signal transmission component. A part of the rotation detector component forms an exposed portion exposed from the body portion. | 06-06-2013 |
20130154626 | ROTATION DETECTION DEVICE AND MANUFACTURING METHOD FOR THE SAME - A rotation detector component detects a rotational state of a rotor and sends a rotational detection signal. A signal transmission component is electrically connected with a lead frame of the rotation detector component to transmit the rotational detection signal to an external device. A body portion holds the rotation detector component and a part of the signal transmission component. The body portion is integrally molded of a first resin to cover a joint portion between the lead frame and the signal transmission component, the rotation detector component, and a part of the signal transmission component. The rotation detector component has corners including at least two exposed corners, which are exposed from the body portion. | 06-20-2013 |
20140053646 | ROTATION SENSING APPARATUS AND MANUFACTURING METHOD THEREOF - A signal transmitting member is electrically connected to a rotation sensing device and transmits a rotation sensing signal from the rotation sensing device to an external device. An internal structure holds the rotation sensing device and a portion of the signal transmitting member. At least one rib is molded on an outer peripheral surface of the internal structure. The internal structure is integrally molded with a resin material and includes an installing portion, which is configured to install the rotation sensing apparatus to an external subject body through the installing portion, and a holding portion, which is configured to enable holding of the rotation sensing apparatus through the holding portion. A plurality of recesses is formed between the installing portion and the holding portion. | 02-27-2014 |
20140139208 | ROTATION DETECTION DEVICE - A rotation detection device includes an encoder that is rotatably arranged, multiple detection object portions that are provided in the encoder and arranged in a circumferential direction, and a rotation detector for detecting rotation of the encoder. The rotation detector includes a detection portion for detecting the rotation of the encoder, a pulse generation portion for generating a pulse based on a detection signal that is outputted from the detection portion, a rotation speed calculation portion for calculating a first rotation speed of the encoder based on the pulse, a pulse counter for counting the pulse, an encoding portion for encoding information that includes the first rotation speed and a counter value of the pulse counter, and a communication portion for communicating the encoded information through unidirectional communication or interactive communication with an external device. | 05-22-2014 |
20140320119 | ROTATION SENSING APPARATUS - A sensor main body includes sensing elements, which sense rotation of a rotatable body. A first molded body is made of a resin material and covers the sensor main body. The sensor main body is placed at a distal end portion of the first molded body. A cover covers the distal end portion of the first molded body. An electrically conductive member is placed between the cover and the sensor main body and is electrically connected to a ground terminal of the sensor main body. | 10-30-2014 |
Patent application number | Description | Published |
20090201231 | EL DISPLAY DEVICE - An EL display device includes: a source driver circuit to output a video signal voltage; a gate driver circuit to select a pixel in a display screen; a first capacitor to maintain the video signal voltage; and a drive transistor to supply current to an EL element of a pixel. The video signal voltage is applied to the drive transistor to perform a predetermined operation, and written into the first capacitor. The video signal voltage maintained in the first capacitor is used to perform an offset cancel operation. | 08-13-2009 |
20090284515 | EL DISPLAY DEVICE - There is provided an EL display device having a plurality of pixels arranged in a matrix pattern, wherein the pixels each include an EL element and a drive transistor configured to define a current to be supplied to the EL element, and switches configured to supply a reset power to the drive transistors of the respective pixels are provided one each for a row of the pixels arranged in the matrix pattern. | 11-19-2009 |
20100265237 | EL DISPLAY DEVICE AND DRIVING METHOD THEREOF - There is provided an EL display device including: a drive transistor configured to determine an electric current to be supplied to the EL element; and a capacity for retaining a gate voltage of the drive transistor, wherein a gate electrode of the drive transistor is connected to a first electrode, which is one of electrodes of the capacity, a first power source and a second power source are connected alternately to a second electrode, which is the other electrode of the capacity, a power source of a reference voltage is connected in a first period in which a signal from a source signal line is applied to the drive transistor, and an EL anodic power source is connected in a second period in which the drive transistor supplies an electric current to the EL element. | 10-21-2010 |
20100277401 | EL DISPLAY PANEL DRIVING METHOD - In order to charge and discharge parasitic capacitance of a source signal line sufficiently and program a predetermined current value into a pixel transistor, it is necessary to output a relatively large current from the source driver circuit. However, if such a large current is passed through the source signal line, the value of this current is programmed into the pixel, causing a larger than desired current to flow through an EL element. For example, if a 10 times larger current is used for programming, a 10 times larger current flows through the EL element, and thus the EL element illuminates 10 times more brightly. To obtain predetermined emission brightness, the time during which the current flows through the EL element can be reduced to 1/10 of one frame (1 F). This way, the parasitic capacitance of the source signal line can be charged and discharged sufficiently and the predetermined emission brightness can be obtained. | 11-04-2010 |
20130155124 | DISPLAY DEVICE AND METHOD OF DRIVING THE SAME - The method is for driving a display device including luminescence pixels arranged in rows and columns. The method includes: applying a black signal voltage to (a) a first target luminescence pixel in one row of each row pair and (b) a second target luminescence pixel in the other row at the same time, thereby starting the non-light-emission durations of the first and second target luminescence pixels simultaneously; (ii) applying a first data signal voltage to the first target luminescence pixel; (iii) applying a second data signal voltage to the second target luminescence pixel; and (iv) causing the first and second target luminescence pixels to emit light simultaneously based on these data signal voltages, thereby starting the light-emission durations of the first and the second target luminescence pixels simultaneously. The processing starts at different times for all row pairs. | 06-20-2013 |
20130241966 | EL DISPLAY DEVICE - Provided is an EL display device that includes: an EL display panel including an array of a plurality of pixel circuits each having a drive transistor that applies a current to an organic EL element; a driver circuit that applies, to each of the pixel circuits, a signal in response to an image signal and a signal for selecting pixel circuits that are expected to emit light; and an N-bit D/A converter. An image display period in a single frame is divided into a first subframe and a second subframe, the first subframe performing display by light emission based on a gray-level signal of high N bits, the second subframe performing display by light emission based on a gray-level signal of low M bits (where M satisfies M09-19-2013 | |
20130266113 | BUFFER CIRCUIT AND BUFFER CIRCUIT DRIVING METHOD - A buffer circuit driving method for driving a buffer circuit including: an output terminal; a first transistor connected to a signal source of a clock signal that is of at least a first voltage or a second voltage lower than the first voltage, for supplying the first voltage to the output terminal; and a second transistor connected to a voltage source that supplies a third voltage lower than the first voltage, for supplying the third voltage to the output terminal, includes: causing the first transistor to switch to a conducting state in a period where the clock signal is of the first voltage; and causing the first transistor and the second transistor to switch to the conducting state in a period where the clock signal is of the second voltage, following the period where the clock signal is of the first voltage. | 10-10-2013 |
20130328753 | DISPLAY APPARATUS - A pixel circuit has a first capacitor having a first terminal connected with a gate of a driving transistor; a second capacitor connected between a second terminal of the first capacitor and a source of the driving transistor; a first switch applying a reference voltage to a node at which the first capacitor and the second capacitor are connected; a second switch supplying an image signal voltage to the gate of the driving transistor; a third switch supplying an initialization voltage to a drain of the driving transistor and a fourth switch supplying current to the drain of the transistor for emitting light from the current light emitting device. | 12-12-2013 |
20130335399 | DISPLAY APPARATUS - The display apparatus has a plurality of arrayed pixel circuits. Each of the pixel circuits has a current light emitting device; a driving transistor supplying current to the current light emitting device; a first capacitor having a first terminal connected with a gate of the driving transistor; a second capacitor connected between a second terminal of the first capacitor and a source of the driving transistor; a first switch applying a reference voltage to a node at which the first capacitor and the second capacitor are connected; a second switch supplying an image signal voltage to the gate of the driving transistor, and a third switch supplying an initialization voltage to the source of the driving transistor. | 12-19-2013 |
20140022288 | DRIVING METHOD OF DISPLAY APPARATUS - A pixel circuit includes a current light emitting device, a driving transistor, a first capacitor, a second capacitor, a first switch applying a reference voltage to a gate of the driving transistor, a second switch supplying an image signal voltage to a node at which the first and the second capacitors are connected, a third switch supplying an initialization voltage to a source of the driving transistor, and a fourth switch configured to short circuit the first capacitor. In initializing period, differential voltage between the reference voltage and the initializing voltage is applied to the second capacitor. In threshold detection period, the voltage of the second capacitor is reduced by closing a current path having the driving transistor. In writing period, a differential voltage between the reference voltage and the image signal voltage to the first capacitor. In luminescence period, a current is applied to the current light emitting device. | 01-23-2014 |
20140146027 | DISPLAY DEVICE AND METHOD FOR DRIVING SAME - A display device includes: a plurality of pixel circuits; a first gate signal wire arranged for every two rows of the pixel circuits; a second gate signal wire arranged for every row of the pixel circuits, a source signal wire arranged for every column of the pixel circuits; a switch arranged at each intersection of the second gate signal wire and the source signal wire; and a secondary source signal wire arranged to correspond to each of the switches, each of the pixel circuits including a switch and a storage capacitance, the switch switching between conduction and non-conduction between the source signal wire and the secondary source signal wire in accordance with the voltage of the second gate signal wire, and the switch switching between conduction and non-conduction between the secondary source signal wire and the storage capacitance in accordance with the voltage of the first gate signal wire. | 05-29-2014 |
20140192101 | DISPLAY APPARATUS - A display apparatus has an image display unit having a plurality of arrayed pixel circuits, and an image signal compensation circuit compensating an image signal and outputs the compensated signal to the image display unit. Each of the pixel circuits has a compensating capacitor which compensates the threshold voltage of the driving transistor. The image signal compensation circuit has a compensation memory storing a compensation data for compensating the current variation of the driving transistors, a first comparison circuit which compares the image signal and first threshold value, and an arithmetic circuit compensating the image signal. When the image signal has a luminance larger than the threshold value, the compensation is performed. | 07-10-2014 |
20140313241 | DISPLAY DEVICE AND METHOD OF CONTROLLING THE SAME - Pixel circuits of a display device each include: a drive transistor including one of a source and drain connected to a power source line; a capacitive element including a first terminal connected to a gate of the drive transistor; a switching element which switches conduction/non-conduction between a second terminal of the capacitive element and a data line; a switching element which switches conduction/non-conduction between the second terminal of the capacitive element and the source of the drive transistor; a switching element which switches conduction/non-conduction between the first terminal of the capacitive element and a reference voltage line; a light-emitting element including a first terminal connected to the other of the source and drain of the drive transistor and a second terminal connected to another power source line. The reference voltage line provides a forward bias voltage larger than a threshold voltage across the gate and source of the drive transistor. | 10-23-2014 |
20140333609 | EL DISPLAY APPARATUS - An EL display apparatus according to the present invention includes EL device adapted to emit light at a luminance corresponding to a current fed thereto. A source driver outputs a current higher than a current corresponding to an image signal to the EL device through a source signal line. This operation charges/discharges a parasitic capacitance present in the source signal line. A transistor formed between the EL device and the source driver operates so that the EL device is fed with the current for only a part of a one-frame period. As a result, the El device emits light for only the part of the period. | 11-13-2014 |
20150070253 | DISPLAY DEVICE - A display device has a plurality of arrayed display pixels. A drive transistor includes a first gate electrode and supplies the current corresponding to a level of a luminance signal to the luminescence element. A switching transistor includes a source electrode, a drain electrode, a second gate electrode and a semiconductor layer. The semiconductor layer is faced with the second gate electrode and has, in a channel width direction perpendicular to a channel length direction of the switching transistor, a channel region with a first width and a remainder region with a second width larger than the first width. The source electrode or the drain electrode is connected to the first gate electrode. The source electrode and the drain electrode are provided on the semiconductor layer at an interval. The second gate electrode overlaps, in a plan view, the channel region entirely and the remainder region at least partially. | 03-12-2015 |
20150116194 | SHIFT REGISTER AND DISPLAY DEVICE - A shift register includes unit circuits connected in a cascade, and each of the unit circuits includes a logic circuit, a first output unit, and a second output unit. The first output unit is a buffer amplifier for outputting a driving signal and includes: a first transistor for outputting a first voltage; and a second transistor for outputting a second voltage lower than the first voltage. The second output unit is a buffer amplifier for outputting a signal to a next unit circuit in the cascade and includes: a third transistor for outputting a third voltage; and a fourth transistor for outputting a fourth voltage lower than the third voltage. The second voltage is set at a potential higher than the fourth voltage. | 04-30-2015 |
Patent application number | Description | Published |
20110162164 | CORDED HOSE AND DUST COLLECTOR - A hose equipped with a cord, wherein the hose and the cord can be easily assembled together and easily maintained. A cord-equipped hose, wherein opposite ends of a flexible hose are respectively provided with tube holders each constructed from a pair of half tubes. The tube holders each sandwich an end of the flexible hose with the pair of half tubes joined together and each form, between the joined ends of the half tubes, a lead-out opening for an electric power source cord. Opposite ends of the electric power source cord in the flexible hose are respectively led out of the lead-out of the tube holders and held in position. | 07-07-2011 |
20120018183 | CLUTCH MECHANISMS FOR POWER SCREWDRIVERS - A synchronization mechanism of a clutch mechanism includes a drive side contact member and a driven side contact member provided on a drive side clutch member and a driven side clutch member of a clutch mechanism at positions radially inwardly of a drive side clutch portion and a driven side clutch portion, respectively. The driven side contact member does not contact the drive side contact member when the driven side clutch member is in a disengaging position. As the driven side clutch member moves from the disengaging position to an engaging position, the driven side contact member contacts the drive side contact member, so that the rotation of the drive side clutch member is transmitted to the driven side clutch member through frictional contact between the driven side contact member and the drive side contact member before the driven side clutch member reaches the engaging position. | 01-26-2012 |
20120055312 | BAND SAW HAVING ADJUSTABLE BLADE GUIDE - A band saw has a housing, a pair of wheels rotatably disposed on the housing, a drive unit connected to one of the wheel, a continuous band saw blade supported by the wheels, and a guide movably attached to the housing. The guide is positioned to contact with the band saw blade in a thickness direction of the band saw blade in order to restrict movement of the band saw blade in its thickness direction. | 03-08-2012 |
20120220256 | CORDLESS FLASHLIGHT AND RADIO DEVICE - A portable battery-powered device comprises a lamp unit pivotably attached to a front side of a housing. A radio unit is disposed within the housing. At least one speaker is electrically coupled to the radio unit and is disposed on the front side of the housing such that the lamp unit and the speaker face the same direction. A battery pack holder is disposed on a bottom side of the housing and is configured to retain a rechargeable battery pack. | 08-30-2012 |
20130006405 | PORTABLE RADIO SETS - Embodiments of the present invention may include a box-shaped housing having an upper face; a sound output device for reproducing sound; and an attachment device provided on the upper face of the housing and configured so that a portable audio player can be directly attached thereto. The attachment device allows the sound output device to communicate with the audio player attached thereto, whereby the sound output device can reproduce the sound data stored in the audio player as sound. | 01-03-2013 |
20150060430 | HEAT-RETAINING JACKET - A heating jacket of the present invention includes a jacket main body provided with a pocket, a heating element that is housed between a face cloth and a lining cloth of the jacket main body, and a battery that supplies power to the heating element. The jacket main body is provided with a power line through which the power of the battery can be supplied to the heating element. Holes are formed in the jacket main body for passing the power line | 03-05-2015 |
Patent application number | Description | Published |
20080256224 | Data communication system and session management server - A data communication system is provided that is capable of increasing or decreasing the number of session management servers flexibly, and is further capable of implementing data communication while distributing the message processing load in the session management server. The data communication system includes multiple communication devices which perform data communications mutually, multiple session management servers which manage sessions of data communication between the communication devices, and a load balancer which assigns the session management servers for processing a message received from the communication device according to a predetermined criterion, wherein, the session management server is provided with a unit for managing a currently logged-in communication device and a state of the communication performed by the communication device, and a unit for acquiring information necessary for performing communication with the communication device. | 10-16-2008 |
20090103918 | Communication System Using Passive Optical Network and Passive Optical Network - An OLT transmits and receives a CMTS/CM apparatus control signal through an apparatus physical management interface which is physically identical to or different from a main signal interface (NNI) and processes the CMTS apparatus control signal by itself. When connection of a new ONU is detected by an ONU apparatus control signal, an IP address is allocated by using the CM apparatus control signal in a manner similar to the CM. The CM apparatus control signal regarding the ONU is transmitted and received by using the IP address and a mutual conversion is performed between the CM apparatus control signal and the ONU apparatus control signal. The ONU processes the ONU apparatus control signal in a manner similar to the ONU based on an ordinary PON standard. | 04-23-2009 |
20090113203 | Network System - An encryption communication module on the side of a service providing server reports a global IP address allocated to an NAPT router on the service providing server side and a port number of an outside UDP header used on the global side to an authentication/key exchange server. When receiving an encryption packet from an encryption communication module on the user terminal side, the encryption communication module on the service providing server side overwrite a source/destination IP address of an inside IP header by a source/destination IP address of an outside IP header. The encryption communication module further changes a source port number of an inside TCP•UDP header to a unique value for each communication session in the encryption communication having the same source IP address in the outside IP header. The inverse header change is made when the packet is transmitted to the encryption communication module of the user terminal side. | 04-30-2009 |
20090232498 | Communication System Using Passive Optical Network and Passive Optical Network - An OLT transmits and receives a CMTS/CM apparatus control signal through an apparatus physical management interface which is physically identical to or different fro a main signal interface (NNI) and processes the CMTS apparatus control signal by itself. When connection of a new ONU is detected by an ONU apparatus control signal, an IP address is allocated by using the CM apparatus control signal in a manner similar to the CM. The CM apparatus control signal regarding the ONU is transmitted and received by using the IP address and a mutual conversion is performed between the CM apparatus control signal and the ONU apparatus control signal. The ONU processes the ONU apparatus control signal in a manner similar to the ONU based on an ordinary PON standard. | 09-17-2009 |
20100002702 | FRAME FORWARDING APPARATUS - A MVAC spoofed frame or a loop frame generated by a user is prevented from obstructing communication and the source port ID of a fraud is reported to the network administrator. A MAC frame forwarding apparatus adds the input port ID and the source MAC address of a received frame. The MAC frame forwarding apparatus has a frame forwarding management table and a frame discarding management table. The frame discarding management table has a MAC address to be discarded, indicating a received frame to be discarded if the address matches the source MAC address of the received frame, a target port ID, and the number of discarded frames. A management apparatus discards a received frame if the source MAC address matches the MAC address to be discarded and counts the number of discarded frames. If the number of discarded frames exceeds a predetermined level, the port ID, the MAC address, and the number of discarded frames are reported to the management apparatus, and the source port of the fraud is reported to the administrator. | 01-07-2010 |
Patent application number | Description | Published |
20090081754 | GENE OF ENZYME HAVING ACTIVITY TO GENERATE LACHRYMATORY FACTOR - It is an object of the present invention to provide isozymes of the lachrymatory factor producing enzyme, the amino acid sequences of these isozymes and a gene that codes for these amino acid sequences, and the present invention relates to three types of isozymes of the lachrymatory factor producing enzyme that contributes to the production of the lachrymatory factor that is present in onions and the like, amino acid sequences indicated by SEQ ID Nos. 1 to 3 which constitute the proteins or polypeptides of these isozymes, DNA indicated by SEQ ID Nos. 4 and 5 which contains base sequences that code for the abovementioned proteins or polypeptides, a method of producing the abovementioned isozymes, a recombinant vector which contains the abovementioned DNA, a transformant formed by transforming a host cell with the abovementioned recombinant vector, a method of producing proteins or polypeptides that have lachrymatory factor producing enzyme activity by culturing the abovementioned host cell, and anti-sense RNA which has a base sequence that is complementary to that of the mRNA corresponding to the abovementioned DNA. | 03-26-2009 |
20100055241 | FENUGREEK SEED HAVING REDUCED BITTER TASTE AND METHOD FOR PRODUCING THE SAME - It is an object of the present invention to obtain fenugreek seeds having reduced bitter taste without causing significant changes in non-bitter components contained in fenugreek seeds. | 03-04-2010 |
20100062091 | PROCESSED PRODUCT OF FENUGREEK SEEDS AND METHOD FOR PRODUCING THE SAME - It is an object of the present invention to enhance the α-amylase inhibitory activity of a fenugreek seed component. According to the present invention, the bitter taste of fenugreek seeds can be collaterally reduced. | 03-11-2010 |
20110256283 | Method for Preventing Decomposition/Deterioration of Lipophilic Component in the Presence of Water - Provided is a method for preventing decomposition/deterioration of a lipophilic component due to interaction with water, or due to interaction with light, enzymes, oxygen, or heat in the presence of water. The method for preventing decomposition/deterioration of the lipophilic component in the presence of water is characterized in that a complex comprising a lipophilic component, a phytosterol ester, and a cyclodextrin is formed, and the aforementioned lipophilic component is preserved in the form of said complex in the presence of water. | 10-20-2011 |
Patent application number | Description | Published |
20090031859 | METHOD FOR PRODUCING METALLIC IRON - A hearth material is laid in the form of a layer on the hearth prior to supply of a mixture containing a carbonaceous reducing agent and iron oxides onto a hearth of a reduction melting furnace, thereby forming a renewable hearth capable of being renewed, and the metallic iron is produced while renewing a part or the whole of the renewable hearth, which has deteriorated during operation, with the hearth material. | 02-05-2009 |
20090183600 | METHOD FOR PRODUCING METALLIC IRON - A method for producing metallic iron in which a mixture including a carbonaceous reducing agent and iron oxide is fed onto a hearth of a moving hearth reducing-melting furnace and is then heated so that the iron oxide is reduced and melted. Metallic iron to be obtained is cooled and is then discharged outside the furnace for recovery. Prior to the feed of raw agglomerates, a granular hearth material is bedded on the moving hearth for forming a layered renewable hearth which can be renewed. Part or the entirety of the renewable hearth which was degraded during operation is renewed, and the hearth material for forming a new renewable hearth is fed. The surface of the newly formed hearth is then leveled and mixture is subsequently fed. | 07-23-2009 |
20120007292 | METHOD AND APPARATUS FOR PRODUCING REDUCED METAL - A feedstock-feeding step of feeding a feedstock containing a carbonaceous reductant and an iron oxide-containing material into a rotary hearth furnace, a heating/reducing step of heating the feedstock to reduce iron oxide contained in the feedstock into reduced iron, a melting step of melting the reduced iron, a cooling step of cooling the molten reduced iron, and a discharging step of discharging the cooled reduced iron are performed in that order in the direction that a hearth is moved. The furnace includes flow rate-controlling partitions, arranged therein, for controlling the flow of furnace gas and the furnace gas in the cooling step is allowed to flow in the direction of the movement of the hearth with the partitions. | 01-12-2012 |
20130098202 | PROCESS FOR PRODUCING MOLTEN STEEL USING GRANULAR METALLIC IRON - A process for producing a molten steel (G) is disclosed in which particulate metallic iron can be more efficiently melted. The process includes the step of melting, in an electric arc furnace (2), all charge for iron which comprises: particulate metallic iron (A) produced by a method including a step in which a feed material comprising a carbonaceous reducing material and an iron oxide-containing substance is heated in a rotary hearth furnace (1) as a reducing/melting furnace and the iron oxide contained in the feed material is thereby reduced in the solid state to yield metallic iron and a step in which the resultant metallic iron is heated to a higher temperature to melt the metallic iron and the molten iron is aggregated while separating the iron from the slag (B); and scraps (D) which are another feed material for iron. The process is characterized in that the content of carbon in the particulate metallic iron (A) is regulated to 1.0-4.5 mass % and the carbon in the particulate metallic iron (A) is burned by oxygen blowing. The process is further characterized in that the particulate metallic iron (A) is used in an amount of 40-80 mass % with respect to all charge for iron and that the scraps (D) are initially charged into the electric arc furnace (2) to obtain molten iron (F) and then the particulate metallic iron (A) is continuously charged into the molten iron (F). | 04-25-2013 |
20130118307 | DEVICE FOR PRODUCING GRANULAR METAL IRON AND PROCESS FOR PRODUCING GRANULAR METAL IRON - A device for producing granular metal iron by placing a mass of a raw material mixture comprising a substance containing iron oxide and a carbonaceous reducing agent onto a heath of a moving heath type heating furnace and heating the mass to reduce iron oxide in the mass, thereby producing the granular metal iron. The device comprises, in addition to the moving heath type heating furnace, a sieving machine, a first magnetic separator and a second magnetic separator, and also comprises a passage through which a discharged substance from the moving heath type heating furnace is supplied to the sieving machine, a passage through which crude granules that have been sieved by the sieving machine are supplied to the first magnetic separator, and a passage through which fine granules that have been sieved by the sieving machine are supplied to the second magnetic separator. | 05-16-2013 |
20130154167 | ROTARY HEARTH FURNACE EXHAUST GAS DUCT APPARATUS AND METHOD FOR OPERATING SAME - An exhaust gas duct apparatus for use in a rotary-hearth furnace for heating a starting material including a carbonaceous reducing material and an iron-oxide containing material to produce reduced iron or granular metallic iron. In an exhaust gas duct for use in the rotary-hearth furnace, a cooling part for cooling an exhaust gas discharged from the rotary-hearth furnace to solidify a metal salt in the exhaust gas, a collision part for allowing the exhaust gas just after being cooled to collide therewith to drop down the metal salt solidified, and a direction change duct for guiding the exhaust gas after being collided, in a direction other than a direction of dropping the metal salt, are arranged in this order in two stages. | 06-20-2013 |
Patent application number | Description | Published |
20080283718 | Vibration control supporter - A vibration control supporter includes a rod shaped screwing body screwed into a fixing member, an upper elastic support part at a side of the screwing body away from the member, and a lower elastic support part at a side of the screwing body close to the member. The upper part joins the screwing body and the device by an upper elastic body. The lower part joins the screwing body and the device by a lower elastic body. Turning force of the screwing body is transmitted to the upper body. The lower part includes a collar inserted into the lower body. The collar has an insertion hole, through which the screwing body passes. A clearance for canceling a tolerance is formed between a loosely fitted portion of the hole and the screwing body. A movement restricting portion of the hole contacts the screwing body to prevent movement of the collar. | 11-20-2008 |
20110315005 | Pressure Relief Valve and High Pressure Pump with Such Valve - A valve member of a pressure relief valve has a shaft portion, a pressure receiving portion, and a guide portion, wherein the valve member is axially movable in a fuel return passage. When a forward end of the shaft portion is seated on a valve seta, the fuel return passage is closed, while the shaft portion is separated from the valve seat the fuel return passage is opened. A notched portion is formed at an outer wall of the guide portion to thereby form an outer-surface passage. A fuel inlet port is formed in the valve member for communicating a fuel inlet chamber to the fuel return passage at a downstream side of the valve member. | 12-29-2011 |
20130306033 | RELIEF VALVE FOR HIGH-PRESSURE FUEL PUMP - A relief valve includes a valving element, a movable holder, a housing having a guide hole and a valve seat, and a resilient member. The valving element is lifted from its seated state, in which the valving element is engaged with the valve seat, toward a pressurizing chamber in a lift period. The lift period includes a lift first period and a lift second period. An amount of the lift of the valving element reaches a set distance in the lift first period. The lift second period is after the amount of the lift of the valving element has reached the set distance. The movable holder slides inside the guide hole both in the lift first period and in the lift second period. A minimum clearance area between the movable holder and the guide hole is larger in the lift second period than in the lift first period. | 11-21-2013 |
20140182451 | PRESSURE RELIEF VALVE AND HIGH PRESSURE PUMP WITH SUCH VALVE - A valve member of a pressure relief valve has a shaft portion, a pressure receiving portion, and a guide portion, wherein the valve member is axially movable in a fuel return passage. When a forward end of the shaft portion is seated on a valve seta, the fuel return passage is closed, while the shaft portion is separated from the valve seat the fuel return passage is opened. A notched portion is formed at an outer wall of the guide portion to thereby form an outer-surface passage. A fuel inlet port is formed in the valve member for communicating a fuel inlet chamber to the fuel return passage at a downstream side of the valve member. | 07-03-2014 |
Patent application number | Description | Published |
20090098007 | Duplex Stainless Steel - The present invention provides duplex stainless steel superior in corrosion resistance in a chloride environment and impact properties suitable as a material for pumps for seawater desalination plants, facilities and equipment, and materials for chemical tanks, that is, duplex stainless steel characterized by containing, by mass %, C: 0.06% or less, Si: 0.05 to 3.0%, Mn: 0.1 to 6.0%, P: 0.05% or less, S: 0.010% or less, Ni: 1.0 to 10.0%, Cr: 18 to 30%, Mo: 5.0% or less, Cu: 3.0% or less, N: 0.10 to 0.40%, Al: 0.001 to 0.08% or less, Ti: 0.003 to 0.05%, Mg: 0.0001 to 0.0030%, and O: 0.010% or less, having a product of an activity coefficient f | 04-16-2009 |
20100230011 | AUSTENITE-TYPE STAINLESS STEEL HOT-ROLLING STEEL MATERIAL WITH EXCELLENT CORROSION RESISTANCE, PROOF-STRESS, AND LOW-TEMPERATURE TOUGHNESS AND PRODUCTION METHOD THEREOF - An austenitic stainless steel hot-rolled steel material can be provided which has sea-water resistance and strength superior to conventional steel. Low-temperature toughness can be maintained, which is preferable in a structural member of speedy craft. The steel material can include an austenitic stainless steel hot-rolled steel material which excels in the properties of corrosion resistance, proof stress, and low-temperature toughness. In such austenitic stainless steel hot-rolling steel material, e.g., PI [=Cr+3.3(Mo+0.5W)+16N] ranges from 35 to 40, δ cal [=2.9(Cr+0.3Si+Mo+0.5W)−2.6(Ni+0.3Mn+0.25Cu+35C+20N)−18] ranges from −6 to +2, and a 0.2% proof stress at room temperature is not less than 550 MPa, Charpy impact value measured using a V-notch test piece at −40° C. is not less than 100 J/cm2, and the pitting potential measured in a deaerated aqueous solution of 10% NaCl at 50° C. (Vc'100) is not less than 500 mV (as it relates to saturated Ag/AgCl). | 09-16-2010 |
20110097234 | LEAN DUPLEX STAINLESS STEEL EXCELLENT IN CORROSION RESISTANCE AND TOUGHNESS OF WELD HEAT AFFECTED ZONE - The present invention provides a lean duplex stainless steel able to suppress the drop in corrosion resistance and toughness of a weld heat affected zone and is characterized by containing, by mass %,
| 04-28-2011 |
20120111457 | AUSTENITE-TYPE STAINLESS STEEL HOT-ROLLING STEEL MATERIAL WITH EXCELLENT CORROSION RESISTANCE, PROOF-STRESS, AND LOW-TEMPERATURE TOUGHNESS AND PRODUCTION METHOD THEREOF - An austenitic stainless steel hot-rolled steel material can be provided which has seawater resistance and strength superior to conventional steel. Low-temperature toughness can be maintained, which is preferable in a structural member of speedy craft. The steel material can include an austenitic stainless steel hot-rolled steel material which excels in the properties of corrosion resistance, proof stress, and low-temperature toughness. In such austenitic stainless steel hot-rolling steel material, e.g., PI [=Cr+3.3(Mo+0.5W)+16N] ranges from 35 to 40, δ cal [=2.9 (Cr+0.3Si +Mo+0.5W)−2.6 (Ni+0.3Mn+0.25Cu+35C+20N)−18] ranges from −6 to +2, and a 0.2% proof stress at room temperature is not less than 550 MPa, Charpy impact value measured using a V-notch test piece at −40° C. is not less than 100 J/cm2, and the pitting potential measured in a deaerated aqueous solution of 10% NaCl at 50° C. (Vc'100) is not less than 500 mV (as it relates to saturated Ag/AgCl). | 05-10-2012 |
Patent application number | Description | Published |
20130039801 | MARTENSITIC STAINLESS STEEL WITH EXCELLENT WELD CHARACTERISTICS, AND MARTENSITIC STAINLESS STEEL MATERIAL - This martensitic stainless steel contains, in terms of percent by mass: C: 0.003% to 0.03%; Si: 0.01% to 1.0%; Mn: 3.0% to 6.0%; P: 0.05% or less; S: 0.003% or less; Ni: 1.0% to 3.0%; Cr: 15.0% to 18.0%; Mo: 0% to 1.0%; Cu: 0% to 2.0%; Ti: 0% to 0.05%; N: 0.05% or less; Al: 0.001% to 0.1%; and O: 0.005% or less, with a remainder being Fe and inevitable impurities, wherein a total amount of C and N is in a range of 0.060% or less, γ | 02-14-2013 |
20130288074 | ALLOYING ELEMENT-SAVING HOT ROLLED DUPLEX STAINLESS STEEL MATERIAL, CLAD STEEL PLATE HAVING DUPLEX STAINLESS STEEL AS CLADDING MATERIAL THEREFOR, AND PRODUCTION METHOD FOR SAME - This alloying element-saving hot rolled duplex stainless steel material contains, by mass %, C: 0.03% or less, Si: 0.05% to 1.0%, Mn: 0.5% to 7.0%, P: 0.05% or less, S: 0.010% or less, Ni: 0.1% to 5.0%, Cr: 18.0% to 25.0%, N: 0.05% to 0.30% and Al: 0.001% to 0.05%, with a remainder being Fe and inevitable impurities, wherein the alloying element-saving hot rolled duplex stainless steel material is produced by hot rolling, a chromium nitride precipitation temperature TN is in a range of 960° C. or lower, a yield strength is 50 MPa or more higher than that of a hot rolled steel material which is subjected to a solution heat treatment, and the alloying element-saving hot rolled duplex stainless steel material is as hot rolled state, and is not subjected to a solution heat treatment. This clad steel plate includes a duplex stainless steel as a cladding material, the duplex stainless steel has the above composition, and the chromium nitride precipitation temperature TN is in a range of 800° C. to 970° C. | 10-31-2013 |
20140255244 | DUPLEX STAINLESS STEEL, DUPLEX STAINLESS STEEL SLAB, AND DUPLEX STAINLESS STEEL MATERIAL - One aspect of this duplex stainless steel contains, in mass %, C: 0.03% or less, Si: 0.05% to 1.0%, Mn: 0.1% to 7.0%, P: 0.05% or less, S: 0.0001% to 0.0010%, Ni: 0.5% to 5.0%, Cr: 18.0% to 25.0%, N: 0.10% to 0.30%, Al: 0.05% or less, Ca: 0.0010% to 0.0040%, and Sn: 0.01% to 0.2%, with the remainder being Fe and inevitable impurities, wherein a ratio Ca/O of the amounts of Ca and O is in a range of 0.3 to 1.0, and a pitting index PI shown by formula (1) is in a range of less than 30, | 09-11-2014 |