Patent application number | Description | Published |
20150061053 | MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a magnetoresistive element is disclosed. The element includes a first magnetic film, a second magnetic film, and a first nonmagnetic layer formed between the first magnetic film and the second magnetic film. The second magnetic film includes a first magnetic layer formed on a side of the first nonmagnetic layer, a second magnetic layer formed on a side opposite to the first nonmagnetic layer, and a second nonmagnetic layer formed between the first magnetic layer and the second magnetic layer and containing TiN. | 03-05-2015 |
20150068887 | MANUFACTURING METHOD OF MAGNETORESISTIVE ELEMENT AND MANUFACTURING APPARATUS OF THE SAME - According to one embodiment, a method of manufacturing a magnetoresistive element includes intermittently exposing a surface of a base substrate to sputter particles from a sputter target, and thereby forming a thin film on the base substrate. | 03-12-2015 |
20150069542 | MAGNETO-RESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a method of manufacturing a magneto-resistive element, includes forming a first ferromagnetic layer on a substrate, forming a tunnel barrier layer on the first ferromagnetic layer, forming a second ferromagnetic layer containing B on the tunnel barrier layer, exposing a laminate of the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer under a pressurized atmosphere, and annealing the laminate while being exposed to the pressurized atmosphere, thereby promoting the orientation of the second magnetic layer. | 03-12-2015 |
20150069543 | MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a method of manufacturing a magnetoresistive element includes forming a first ferromagnetic layer on a base substrate, forming a tunnel barrier layer on the first ferromagnetic layer, forming a second ferromagnetic layer containing B on the tunnel barrier layer, and performing annealing in a gas-phase atmosphere including a gas, after formation of the second ferromagnetic layer, the gas producing a reaction product with B, the reaction product having a melting point lower than a treatment temperature. | 03-12-2015 |
20150069544 | MAGNETO-RESISTIVE ELEMENT - According to one embodiment, magneto-resistive element, includes a first ferromagnetic layer formed on an underlying substrate, a tunnel barrier layer formed on the first ferromagnetic layer, a second ferromagnetic formed on the tunnel barrier layer and a cap layer formed on the second ferromagnetic layer, and a surface tension of the cap layer is equal to or less than that of the second ferromagnetic layer. | 03-12-2015 |
20150069552 | MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE MAGNETIC MEMORY DEVICE - According to one embodiment, a magnetic memory device includes a magnetoresistance effect element having a structure in which a first magnetic layer, a nonmagnetic layer, a second magnetic layer, and a third magnetic layer are stacked, wherein the third magnetic layer comprises a first region and a plurality of second regions, and each of the second regions is surrounded by the first region, has conductivity, and has a greater magnetic property than the first region. | 03-12-2015 |
20150069553 | MAGNETIC MEMORY AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes a substrate, and a magnetoresistive element provided on the substrate. The magnetoresistive element includes a first magnetic layer, a tunnel barrier layer on the first magnetic layer, and a second magnetic layer on the tunnel barrier layer. The first magnetic layer or the second magnetic layer includes a first region, second region, and third region whose ratios of crystalline portion are higher in order closer to the tunneling barrier. | 03-12-2015 |
20150069554 | MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metallic material, a stacked body formed above the conductive layer and including a first magnetic layer containing a second metallic material, a second magnetic layer, and a tunnel barrier layer formed between the first magnetic layer and the second magnetic layer, and an insulating layer formed on a side face of the stacked body and containing an oxide of the first metallic material. A standard electrode potential of the first metallic material is lower than the standard electrode potential of the second metallic material. | 03-12-2015 |
20150070128 | MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY - According to one embodiment, a magnetoresistive element comprises a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction and includes a nonmagnetic material film and a magnetic material film. The first nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer. The second nonmagnetic layer is arranged on a surface of the second magnetic layer. The third magnetic layer is arranged on a surface of the second nonmagnetic layer. The second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer. | 03-12-2015 |