Patent application number | Description | Published |
20100310985 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A positive resist composition including a base component, an acid-generator component and a fluorine-containing polymer component (F) in a specific amount, the fluorine-containing polymer component (F) including a fluorine-containing polymer (F1) consisting of a structural unit (F-1) represented by general formula (F-1) (R | 12-09-2010 |
20110039207 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A resist composition that includes a base component (A) that exhibits changed solubility in an alkali developing solution under the action of acid, an acid generator component (B) that generates acid upon exposure, and an epoxy resin (G). Also, a method of forming a resist pattern that includes using the above resist composition to form a resist film on the substrate, conducting exposure of the resist film, and alkali-developing the resist film to form a resist pattern. | 02-17-2011 |
20130157197 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND COMPOUND - A resist composition comprising: a base component (A) that exhibits changed solubility in a developing solution by the action of acid; a photoreactive quencher (C); and an acid-generator component (B) that generates acid upon exposure, wherein the photoreactive quencher (C) contains a compound represented by general formula (c1) shown below. In the formula, R | 06-20-2013 |
20130189619 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A resist composition containing a base component (A) that exhibits changed solubility in a developing solution under action of acid, a photoreactive quencher (C), and an acid generator component (B) that generates acid upon exposure, and further containing an acid (G) having a pKa of 4 or less. | 07-25-2013 |
20130209941 | METHOD OF FORMING PATTERN - A method of forming a pattern including applying a resist composition to a substrate to form a resist film, and then subjecting the resist film to exposure and development, thereby forming a first pattern containing a resist film; forming a SiO | 08-15-2013 |
20130224658 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A resist composition including: a base component (A) that exhibits changed solubility in a developing solution by the action of acid; a photoreactive quencher (C); and an acid generator component (B) that generates acid upon exposure, wherein the photoreactive quencher (C) contains a compound (C) represented by general formula (c1) shown below. In the formula, X represents a cyclic group of 3 to 30 carbon atoms which may have a substituent; R | 08-29-2013 |
20130344435 | RESIST COMPPOSITION AND METHOD OF FORMING RESIST PATTERN - A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, and which includes a base component which exhibits changed solubility in a developing solution by the action of acid, and a nitrogen-containing compound which has a boiling point of 50 to 200° C., a conjugate acid thereof having a pKa of 0 to 7, and a photodecomposable base; and a method of forming a resist pattern using the resist composition. | 12-26-2013 |
20140356787 | RESIST COMPOSITION, COMPOUND, POLYMERIC COMPOUND AND METHOD OF FORMING RESIST PATTERN - A resist composition comprising a compound (m0) (wherein Rb | 12-04-2014 |
20140357896 | SULFONIUM SALT AND PHOTO-ACID GENERATOR - Provided is a novel sulfonium salt that has high solubility in a solvent and has high light sensitivity to, especially, light having a wavelength not longer than deep-UV (254 nm) and a novel photo-acid generator comprising the sulfonium salt. The invention relates to a sulfonium salt represented by the following general formula (1) and a novel photo-acid generator comprising the sulfonium salt. | 12-04-2014 |