Patent application number | Description | Published |
20090003046 | MEMORY WITH DYNAMIC REDUNDANCY CONFIGURATION - One embodiment of the invention relates to a method for repairing a memory array. In the method, a group of at least one memory cell is dynamically analyzed to determine whether the memory array includes at least one faulty cell that no longer properly stores data. If the group includes at least one faulty cell, at least the at least one faulty cell is associated with at least another cell. Other methods, devices, and systems are also disclosed. | 01-01-2009 |
20090127536 | INTEGRATED CIRCUIT HAVING DIELECTRIC LAYER INCLUDING NANOCRYSTALS - An integrated circuit includes a first electrode, resistivity changing material coupled to the first electrode, and a second electrode. The integrated circuit includes a dielectric material layer between the resistivity changing material and the second electrode. The dielectric material layer includes nanocrystals. | 05-21-2009 |
20090147563 | INTEGRATED CIRCUIT FOR PROGRAMMING A MEMORY ELEMENT - An integrated circuit includes a resistance changing memory element and a circuit. The circuit is configured to program the memory element by iteratively applying a variable program pulse to the memory element until a resistance of the memory element crosses a first reference resistance. The variable program pulse is adjusted for each iteration such that the resistance of the memory element approaches the first reference resistance. | 06-11-2009 |
20090309149 | Memory cell arrangements and methods for manufacturing a memory cell arrangement - In an embodiment, a memory cell arrangement is provided which may include a charge storing memory cell comprising a first active area running along a first direction, a second active area disposed next to the charge storing memory cell, the second active area running along a second direction, the second direction being different from the first direction, and a select structure disposed above the second active area configured to control a current flow through the second active area. | 12-17-2009 |
20100146189 | Programming Non Volatile Memories - Non volatile memories and methods of programming thereof are disclosed. In one embodiment, the method of programming a memory array includes receiving a series of data blocks, each data block having a number of bits that are to be programmed, determining the number of bits that are to be programmed in a first data block, determining the number of bits that are to be programmed in a second data block, and writing the first and the second data blocks into a memory array in parallel if the sum of the number of bits that are to be programmed in the first data block and the second data block is not greater than a maximum value. | 06-10-2010 |
20100182147 | REMOTE STORAGE OF DATA IN PHASE-CHANGE MEMORY - A security circuit comprising including a sensor located remotely from a central alarm handler and configured to sense an attack, and a phase-change memory cell coupled to and located remotely with the sensor, and configured to store an alarm event when the attack is sensed. | 07-22-2010 |
20100226178 | APPARATUS AND METHODS FOR CORRECTING OVER-ERASED FLASH MEMORY CELLS - A method and flash memory device that correct over-erased memory cells are described. The device includes flash memory cells, erase circuitry, measuring circuitry, and a pulse generator. The method includes performing an erase operation on a first plurality of memory cells, measuring at least one memory cell of a second plurality of memory cells, and if an over-erased memory cell is detected in measuring the second plurality of cells, applying one or more programming pulses to the one or more over-erased cells, the one or more programming pulses cumulatively sufficient to correct a cell in a maximum over-erased state. Also described is a method that registers over-erased cells for programming and applies one or more programming pulses to the registered over-erased cells, the one or more programming pulses cumulatively sufficient to correct a cell in a maximum over-erased state. | 09-09-2010 |
20100301896 | PHASE-CHANGE MEMORY SECURITY DEVICE - A semiconductor chip having a subcircuit formed in a substrate; and a phase-change memory cell located on the subcircuit, and configured to directly detect an attack on the subcircuit, or to form a shield to prevent physical access to the subcircuit. | 12-02-2010 |