Patent application number | Description | Published |
20080203431 | GaN-BASED NITRIC OXIDE SENSORS AND METHODS OF MAKING AND USING THE SAME - GaN-based heterojunction field effect transistor (HFET) sensors are provided with engineered, functional surfaces that act as pseudo-gates, modifying the drain current upon analyte capture. In some embodiments, devices for sensing nitric oxide (NO) species in a NO-containing fluid are provided which comprise a semiconductor structure that includes a pair of separated GaN layers and an AlGaN layer interposed between and in contact with the GaN layers. Source and drain contact regions are formed on one of the GaN layers, and an exposed GaN gate region is formed between the source and drain contact regions for contact with the NO-containing fluid. The semiconductor structure most preferably is formed on a suitable substrate (e.g., SiC). An insulating layer may be provided so as to cover the semiconductor structure. The insulating layer will have a window formed therein so as to maintain exposure of the GaN gate region and thereby allow the gate region to contact the NO-containing fluid. Electrical contact pads are preferably provided in some embodiments so as to be in electrical contact with the source and drain contact regions, respectively. Electrical leads may thus be connected to the contact pads. According to other embodiments, the NO detection device will include a metalloporphyrin adsorbed on the GaN gate region. | 08-28-2008 |
20090067036 | NESTED WAVEGUIDES - A radiation source or detector including a nested waveguide structure is provided. A smaller waveguide provides wave guiding for radiation of shorter wavelength. The smaller waveguide is embedded within a larger waveguide that provides wave guiding for radiation of longer wavelength. Wavelength conversion between the shorter wavelength and the longer wavelength can be realized through a nonlinear process. | 03-12-2009 |
20110097837 | GaN-BASED NITRIC OXIDE SENSORS AND METHODS OF MAKING AND USING THE SAME - GaN-based heterojunction field effect transistor (HFET) sensors are provided with engineered, functional surfaces that act as pseudo-gates, modifying the drain current upon analyte capture. In some embodiments, devices for sensing nitric oxide (NO) species in a NO-containing fluid are provided which comprise a semiconductor structure that includes a pair of separated GaN layers and an AlGaN layer interposed between and in contact with the GaN layers. Source and drain contact regions are formed on one of the GaN layers, and an exposed GaN gate region is formed between the source and drain contact regions for contact with the NO-containing fluid. The semiconductor structure most preferably is formed on a suitable substrate (e.g., SiC). An insulating layer may be provided so as to cover the semiconductor structure. The insulating layer will have a window formed therein so as to maintain exposure of the GaN gate region and thereby allow the gate region to contact the NO-containing fluid. Electrical contact pads are preferably provided in some embodiments so as to be in electrical contact with the source and drain contact regions, respectively. Electrical leads may thus be connected to the contact pads. According to other embodiments, the NO detection device will include a metalloporphyrin adsorbed on the GaN gate region. | 04-28-2011 |
20110112388 | INTEGRATED MINIATURIZED FIBER OPTIC PROBE - A fiber optic probe having one or more photodetectors bound thereto is provided. By directly integrating thin, flexible photodetectors with an optical fiber, the probes provide a compact structure that increases throughput and decreases cost, making it practical for a clinical use. In some embodiments, the fiber optic probes are small enough for insertion into the shaft of a needle, such as a biopsy needle. | 05-12-2011 |
20130107903 | QUANTUM CASCADE STRUCTURES ON METAMORPHIC BUFFER LAYER STRUCTURES | 05-02-2013 |
20130294064 | DIMPLED LIGHT DISTRIBUTION PLATES - Dimpled plates for light distribution and concentration are provided. Also provided are apparatus incorporating the plates as waveguides, and methods for using the dimpled plates for distributing or concentrating input light. The dimpled plates are designed to spatially distribute light from each of one or more near point light sources into a pixelated light projection using an array of reflective conical light deflection elements. | 11-07-2013 |
20130309848 | HIGH THROUGHPUT SEMICONDUCTOR DEPOSITION SYSTEM - A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 μm/minute. | 11-21-2013 |
20140037258 | FABRICATION OF LOW-LOSS, LIGHT-WAVEGUIDING, ORIENTATION-PATTERNED SEMICONDUCTOR STRUCTURES - Methods for the fabrication of orientation-patterned semiconductor structures are provided. The structures are light-waveguiding structures for nonlinear frequency conversion. The structures are periodically poled semiconductor heterostructures comprising a series of material domains disposed in a periodically alternating arrangement along the optical propagation axis of the waveguide. The methods of fabricating the orientation-patterned structures utilize a series of surface planarization steps at intermediate stages of the heterostructure growth process to provide interlayer interfaces having extremely low roughnesses. | 02-06-2014 |
20140339505 | VIRTUAL SUBSTRATES BY HAVING THICK, HIGHLY RELAXED METAMORPHIC BUFFER LAYER STRUCTURES BY HYDRIDE VAPOR PHASE EPITAXY - Virtual substrates made by hydride vapor phase epitaxy are provided comprising a semiconductor growth substrate and a substantially strain-relaxed metamorphic buffer layer (MBL) structure comprising one or more layers of a semiconductor alloy on the growth substrate. The MBL structure is compositionally graded such that its lattice constant transitions from a lattice constant at the interface with the growth substrate that is substantially the same as the lattice constant of the growth substrate to a lattice constant at a surface opposite the interface that is different from the lattice constant of the growth substrate. The virtual substrates comprise relatively thick MBL structures (e.g., >20 μm) and relatively thick growth substrates (e.g., >0.5 mm) | 11-20-2014 |